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Stability and performance of lithium metal batteries using silicon and silver alloyed separator surfaces.
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- International Journal of Electrochemical Science, 2024, v. 19, n. 9, p. 1, doi. 10.1016/j.ijoes.2024.100742
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- Article
Regulating CaSi<sub>2</sub> in High-Calcium Metallurgical-Grade Silicon via Aluminum Incorporation.
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- Metallurgical & Materials Transactions. Part B, 2024, v. 55, n. 5, p. 3938, doi. 10.1007/s11663-024-03227-7
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- Article
Study of the Influence of the Energy of Argon Ions on the Surface Roughness of the Main Sections of Single-Crystal Silicon.
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- Technical Physics, 2024, v. 69, n. 4, p. 959, doi. 10.1134/S1063784224030265
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Application of Cerium Oxide Nanopowders for Silicon Polishing.
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- Technical Physics, 2024, v. 69, n. 4, p. 824, doi. 10.1134/S106378422403006X
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- Article
Method for Obtaining Atomically Smooth Substrates from Single-Crystal Silicon by Mechanical Lapping.
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- Technical Physics, 2024, v. 69, n. 4, p. 812, doi. 10.1134/S1063784224030046
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Methyl Silicon (IV) Schiff base Complexes: Synthesis, Coordination Behavior and their Pharmacologically Significance as Antioxidant, Anti-inflammatory and Anti-diabetic agents.
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- Oriental Journal of Chemistry, 2024, v. 40, n. 4, p. 1097, doi. 10.13005/ojc/400422
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- Article
Study of the Influence of the Energy of Argon Ions on the Surface Roughness of the Main Sections of Single-Crystal Silicon.
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- Technical Physics, 2024, v. 69, n. 3, p. 624, doi. 10.1134/S1063784224020233
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- Article
Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.
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- Semiconductors, 2024, v. 58, n. 3, p. 284, doi. 10.1134/S1063782624030175
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- Article
Formation of Channel Silicon to Create Filter Layers.
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- Semiconductors, 2024, v. 58, n. 3, p. 227, doi. 10.1134/S1063782624030060
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- Article
Top-Down Formation of Biocompatible SiC Nanotubes.
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- Semiconductors, 2024, v. 58, n. 3, p. 209, doi. 10.1134/S1063782624030035
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- Article
Multi-Phonon Relaxation of the 1s(T<sub>2</sub>) Triplet of Neutral Magnesium Donors in Silicon.
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- Semiconductors, 2024, v. 58, n. 3, p. 202, doi. 10.1134/S1063782624030023
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- Article
Optimized silicon fertilization regime weakens cadmium translocation and increases its biotransformation in rice tissues.
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- Crop Journal (2095-5421), 2024, v. 12, n. 4, p. 1041, doi. 10.1016/j.cj.2024.05.014
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- Article
Local Anodic Oxidation of Silicon for Create Crossbar Architecture.
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- Technical Physics, 2024, v. 69, n. 2, p. 357, doi. 10.1134/S1063784224010316
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- Article
Silicon: A Powerful Aid for Medicinal and Aromatic Plants against Abiotic and Biotic Stresses for Sustainable Agriculture.
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- Horticulturae, 2024, v. 10, n. 8, p. 806, doi. 10.3390/horticulturae10080806
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- Article
Micromorphology and silicon of the leaf epidermis in the psammophyte Alyssum desertorum are sensitive to soil flooding.
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- Protoplasma, 2024, v. 261, n. 5, p. 951, doi. 10.1007/s00709-024-01940-3
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- Article
Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields.
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- Semiconductors, 2024, v. 58, n. 1, p. 46, doi. 10.1134/S106378262401010X
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- Article
Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 278, doi. 10.15407/spqeo26.03.278
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- Article
Study of low-energy gamma-ray detection performance of silicon photomultiplier with LaBr<sub>3</sub>(Ce) scintillator.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 236, doi. 10.15407/spqeo26.02.236
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Kinetics of charge carriers in bilateral macroporous silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 159, doi. 10.15407/spqeo26.02.159
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Utilizing machine learning algorithm in predicting the power conversion efficiency limit of a monolithically perovskites/silicon tandem structure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 114, doi. 10.15407/spqeo26.01.114
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Physics of microelectronic devices Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 385, doi. 10.15407/spqeo25.04.385
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The silicon model photonic structure for a full-function thermal photodetector.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 1, p. 108, doi. 10.15407/spqeo25.01.108
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Effect of the diffusion temperature on interaction of clusters with impurity atoms in silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 1, p. 22, doi. 10.15407/spqeo24.01.022
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High-coherent oscillations in IR spectra of macroporous silicon with nanocoatings.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 316, doi. 10.15407/spqeo23.03.316
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Effective minority carrier lifetime in double-sided macroporous silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 1, p. 29, doi. 10.15407/spqeo23.01.029
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Clusters of nickel atoms and controlling their state in silicon lattice.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 392, doi. 10.15407/spqeo21.04.392
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Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 282, doi. 10.15407/spqeo21.03.282
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Photoconductivity relaxation and electron transport in macroporous silicon structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 475, doi. 10.15407/spqeo20.04.475
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Preparation and study of porous Si surfaces obtained using the electrochemical method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 385, doi. 10.15407/spqeo20.04.385
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Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 325, doi. 10.15407/spqeo20.03.325
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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n<sup>+</sup>-n-n<sup>+</sup>-Si in IMPATT diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 366, doi. 10.15407/spqeo19.04.366
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The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley-Read-Hall lifetimes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 334, doi. 10.15407/spqeo19.04.334
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Analysis of the silicon solar cells efficiency. Type of doping and level optimization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 67, doi. 10.15407/spqeo19.01.067
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Electron transport through nanocomposite SiO<sub>2</sub>(Si) films containing Si nanocrystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 9, doi. 10.15407/spqeo19.01.009
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Features of tensoresistance in single crystals of germanium and silicon with different dopants.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 39, doi. 10.15407/spqeo19.01.039
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Influence of nanostructured ITO films on surface recombination processes in silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 464, doi. 10.15407/spqeo18.04.464
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Electro-optical effects in 2D macroporous silicon structures with nanocoatings.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 377, doi. 10.15407/spqeo18.04.377
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Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 97
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Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 26
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Magnetic and magnetoresistive characteristics of neutron-irradiated Si<sub>0.97</sub>Ge<sub>0.03</sub> whiskers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 416
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Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 368
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Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 256
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Features of Auger-emission in channeling.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 97
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Investigation of the influence of isovalent impurity of silicon and γ-irradiation (<sup>60</sup>Co) on electrophysical parameters of n-Ge (Sb).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 25
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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n<sup>+</sup>-n doping step.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 1
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Properties of the crystalline silicon strained via cavitation impact.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 1, p. 43
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Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 382
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Laser-induced incandescence of silicon surface under 1064-nm excitation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 376
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Photoelectrical properties of nanoporous silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 3, p. 298
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Current transport mechanisms in metal -- high-κ dielectric -- silicon structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 2, p. 139
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- Article