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Thermal stability of electrical parameters of silicon crystal doped with nickel during growth.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 1, p. 006, doi. 10.15407/spqeo25.01.006
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- Article
Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 255, doi. 10.15407/spqeo24.03.255
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- Article
Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 123, doi. 10.15407/spqeo20.01.123
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- Article
Voids' layer structures in silicon irradiated with high doses of high-energy helium ions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 292, doi. 10.15407/spqeo18.03.292
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- Article
Nanostructures in lightly doped silicon carbide crystals with polytypic defects.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 155
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- Article
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 331
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- Article
Magnetic field-stimulated change of photovoltage in solar silicon crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 1, p. 72
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- Article
Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 3, p. 218
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- Article
Influence of γ-irradiation ( <sup>60</sup>Co) on the concentration and mobility of carriers in Ge and Si single crystals of n-type.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 1, p. 26
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- Article
Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 470
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- Article
Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 167
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- Article
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 389, doi. 10.15407/spqeo13.04.389
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- Article
Double- and triple-crystal X-ray diffractometry of microdefects in silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 353, doi. 10.15407/spqeo13.04.353
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- Article
Polarization analysis of birefringence in uniaxially deformed silicon crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 1, p. 49, doi. 10.15407/spqeo10.01.049
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- Article
Electric properties of TlInS<sub>2</sub> single crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 82, doi. 10.15407/spqeo9.04.082
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- Article
Modelling vacancy microvoid formation in dislocation-free silicon single crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 77, doi. 10.15407/spqeo9.04.077
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- Article
The features of phonon component of linear dichroism in uniaxially strained silicon crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 319, doi. 10.15407/spqeo6.03.319
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- Article
Silicon Wafers with Facet-Dependent Electrical Conductivity Properties.
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- Angewandte Chemie, 2017, v. 129, n. 48, p. 15541, doi. 10.1002/ange.201709020
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- Article
Transmission Electron Microscopy Characterizations of Local Amorphization of Single Crystal Silicon by Nanosecond Pulsed Laser Direct Writing.
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- Advanced Engineering Materials, 2024, v. 26, n. 2, p. 1, doi. 10.1002/adem.202301377
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- Article
Highly crystalline silicon carbide thin films grown at low substrate temperature by HWCVD technique.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1381, doi. 10.1007/s10854-014-2550-6
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- Article
Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 914, doi. 10.1007/s10854-013-1664-6
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- Article
Investigation of electrical and optical measurements of silicon nanocrystals embedded in SiO matrix.
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- Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 6, p. 1837, doi. 10.1007/s10854-012-1021-1
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- Article
Macroporous silicon: efficient antireflective layer on crystalline silicon.
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- Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 895, doi. 10.1007/s10854-010-0232-6
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- Article
Photoelastic strain measurement in GaP (100) wafers under external stresses.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 83, doi. 10.1007/s10854-008-9651-z
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- Article
Analysis of field dependent steady-state photocarrier grating measurements on polymorphous and microcrystalline silicon films.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 405, doi. 10.1007/s10854-006-9047-x
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- Article
Technology for Producing Crystalline Silicon with the Use of Non-Traditional Reducing Agents.
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- Metallurgist, 2014, v. 57, n. 11/12, p. 1022, doi. 10.1007/s11015-014-9839-9
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- Article
Effect of the kinematics of rotary rolling on the fineness of the structure of hypereutectoid silumins.
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- Metallurgist, 2006, v. 50, n. 7/8, p. 444, doi. 10.1007/s11015-006-0104-8
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- Article
Effect of the main parameters of helical rolling on the ductility properties of hypereutectic silumin alloys.
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- Metallurgist, 2006, v. 50, n. 5/6, p. 277, doi. 10.1007/s11015-006-0076-8
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- Publication type:
- Article
Main factors affecting the mechanism of structure formation and improvements in the ductility properties of hypereutectoid silumins in three-roll rotary rolling.
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- Metallurgist, 2006, v. 50, n. 3/4, p. 199, doi. 10.1007/s11015-006-0064-z
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- Article
Factory Living.
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- 2022
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- Publication type:
- Short Story
Polarization of photons emitted in the process of resonant coherent excitation of relativistic ions under planar channeling conditions.
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- JETP Letters, 2009, v. 89, n. 8, p. 399, doi. 10.1134/S0021364009080050
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- Article
DC-induced generation of the reflected second harmonic in silicon.
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- JETP Letters, 2009, v. 89, n. 2, p. 58, doi. 10.1134/S0021364009020027
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- Article
Investigation of the emission of photons induced in the volume reflection of 10-GeV positrons in a bent silicon single crystal.
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- JETP Letters, 2008, v. 88, n. 7, p. 414, doi. 10.1134/S0021364008190028
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- Article
Investigation of the efficiency of the extraction of a 50-GeV proton beam from a ring accelerator with the use of silicon crystals bent at various angles.
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- JETP Letters, 2008, v. 88, n. 4, p. 229, doi. 10.1134/S0021364008160017
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- Article
The Effect of Uniaxial Static Pressure on the Behavior of an Aluminum Acceptor Impurity in Silicon.
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- JETP Letters, 2004, v. 80, n. 5, p. 339, doi. 10.1134/1.1825118
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- Article
On the Kinetics of Anomalous Muonium in Silicon.
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- JETP Letters, 2003, v. 77, n. 3, p. 121, doi. 10.1134/1.1567771
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- Article
On Effective Electron Mass of Silicon Field Structures at Low Electron Densities.
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- JETP Letters, 2002, v. 76, n. 6, p. 377, doi. 10.1134/1.1525041
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- Article
Formation of Submicron Cylindrical Structures at Silicon Surface Exposed to a Compression Plasma Flow.
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- JETP Letters, 2001, v. 74, n. 4, p. 213, doi. 10.1134/1.1413553
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- Publication type:
- Article
X-ray Microscopy with Asymmetrical Reflection from a Single Crystal.
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- JETP Letters, 2001, v. 73, n. 4, p. 184, doi. 10.1134/1.1368711
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- Publication type:
- Article
μ[sup –]Spin Rotation Study of the Temperature-Dependent Relaxation Rate of Acceptor Centers in Silicon.
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- JETP Letters, 2000, v. 71, n. 10, p. 438, doi. 10.1134/1.568372
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- Publication type:
- Article
Using ANSYS Fluent Finite Element Method to Simulate Effect of Opening Angle of Argon Inlet Channel in Polysilicon Directional Solidification System.
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- Sensors & Materials, 2023, v. 35, n. 3, Part 1, p. 691, doi. 10.18494/SAM4108
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- Publication type:
- Article
Dynamical effects in the integrated X‐ray scattering intensity from imperfect crystals in Bragg diffraction geometry. I. Semi‐dynamical model.
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- Acta Crystallographica. Section A, Foundations & Advances, 2020, v. 76, n. 1, p. 45, doi. 10.1107/S2053273319014281
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- Article
Temperature‐dependent atomic B factor: an ab initio calculation.
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- Acta Crystallographica. Section A, Foundations & Advances, 2019, v. 75, n. 4, p. 624, doi. 10.1107/S205327331900514X
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- Article
Experimentally obtained and computer‐simulated X‐ray non‐coplanar 18‐beam pinhole topographs for a silicon crystal.
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- Acta Crystallographica. Section A, Foundations & Advances, 2019, v. 75, n. 3, p. 483, doi. 10.1107/S2053273319002936
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- Article
Experimentally obtained and computer‐simulated X‐ray asymmetric eight‐beam pinhole topographs for a silicon crystal.
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- Acta Crystallographica. Section A, Foundations & Advances, 2019, v. 75, n. 3, p. 474, doi. 10.1107/S2053273319001499
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- Article
Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. II.
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- Acta Crystallographica. Section A, Foundations & Advances, 2017, v. 73, n. 1, p. 30, doi. 10.1107/S2053273316017988
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- Article
Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I.
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- Acta Crystallographica. Section A, Foundations & Advances, 2016, v. 72, n. 3, p. 349, doi. 10.1107/S2053273316001959
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- Article
Potassium ferrate aqueous solution as a reagent for the synthesis of nanolayers via the successive ionic layer deposition method. Synthesis of CuFeO· nHO.
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- Russian Journal of General Chemistry, 2015, v. 85, n. 11, p. 2528, doi. 10.1134/S1070363215110055
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- Article
Doped Silicon Nanoparticles. A Review.
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- Doklady Chemistry, 2024, v. 514, n. 1, p. 1, doi. 10.1134/S001250082460007X
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- Article
Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals.
- Published in:
- Advances in Science & Technology Research Journal, 2023, v. 17, n. 2, p. 226, doi. 10.12913/22998624/159135
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- Publication type:
- Article