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Comparing single‐shot damage thresholds of boron carbide and silicon at the European XFEL.
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- Journal of Synchrotron Radiation, 2024, v. 31, n. 5, p. 1067, doi. 10.1107/S1600577524007318
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Leistungshalbleiter für die nächste Generation Elektroautos.
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- Elektronik Industrie, 2024, p. 9
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- Article
Zu 100 Prozent mit Ökostrom betrieben.
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- Elektronik Industrie, 2024, p. 6
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- Article
Spark Plasma Sintering of Al<sub>2</sub>O<sub>3</sub>–SiC Ceramics. Study of the Microstructure and Properties.
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- Technical Physics, 2024, v. 69, n. 2, p. 148, doi. 10.1134/S1063784224010055
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Plasma-Chemical Method of Silicon Carbide Modification to Obtain Particles with Controlled Surface Morphology.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 239, doi. 10.1134/S1063785023180189
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Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 171, doi. 10.1134/S1063785023180013
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The Effect of Flux on a Waste-Derived Foamed Ceramic: Analysis of Microstructure and Properties.
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- Crystals (2073-4352), 2024, v. 14, n. 8, p. 682, doi. 10.3390/cryst14080682
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The optimization of mechanical properties of polypropylene/styrene butadiene rubber/silicon carbide nanocomposites using response surface methodology.
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- Polymer Engineering & Science, 2024, v. 64, n. 9, p. 4442, doi. 10.1002/pen.26859
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Persistent Relaxation Processes in Proton-Irradiated 4H-SiC.
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- Semiconductors, 2024, v. 58, n. 1, p. 38, doi. 10.1134/S1063782624010093
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Effect of annealing in air on the properties of carbon-rich amorphous silicon carbide films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 1, p. 54, doi. 10.15407/spqeo27.01.054
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Characterization of nano-bio silicon carbide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 4, p. 346, doi. 10.15407/spqeo23.04.346
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Influence of microwave radiation on relaxation processes in silicon carbide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 175, doi. 10.15407/spqeo23.02.175
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Influence of boron doping on the photosensitivity of cubic silicon carbide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 92, doi. 10.15407/spqeo22.01.92
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Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 200, doi. 10.15407/spqeo21.02.200
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Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 465, doi. 10.15407/spqeo20.04.465
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Nanograin boundaries and silicon carbide photoluminescence.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 344, doi. 10.15407/spqeo20.03.344
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Nanocrystalline silicon carbide films for solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 273, doi. 10.15407/spqeo19.03.273
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External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 448, doi. 10.15407/spqeo18.04.448
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Determination of the Schottky barrier height in diodes based on Au--TiB<sub>2</sub>2--n-SiC 6H from the current-voltage and capacitance-voltage characteristics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 398
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Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 380
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The growth of weakly coupled graphene sheets from silicon carbide powder.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 301
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Nanostructures in lightly doped silicon carbide crystals with polytypic defects.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 155
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Graphene layers fabricated from the Ni/a-SiC bilayer precursor.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322
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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 273
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Silicon carbide phase transition in as-grown 3C-6H polytypes junction.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 132
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Mechanical properties of biomorphous ceramics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 386
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Biomorphic SiC from peas and beans.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 305
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Carbides of A³B<sup>5</sup> compounds -- new class materials for opto- and microelectronics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 1, p. 55
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3C-6H transformation in heated cubic silicon carbide 3C-SiC.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 432
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Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 137
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Simple method for SiC nanowires fabrication.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 7
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Intrinsic defects in nonstoichiometric β-SiC nanoparticles studied by pulsed magnetic resonance methods.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 1, p. 43
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- Article
Silicon carbide defects and luminescence centers in current heated 6H-SiC.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 1, p. 24
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- Article
Effect of Si infiltration method on the properties of biomorphous SiC.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 1, p. 68, doi. 10.15407/spqeo12.01.068
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Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 1, p. 64, doi. 10.15407/spqeo12.01.064
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A silicon carbide thermistor.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 67, doi. 10.15407/spqeo9.04.067
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Lightweight metal matrix syntactic foam.
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- Tribology & Lubrication Technology, 2015, v. 71, n. 8, p. 12
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MAKING HOME-MADE GLASS AND CELLOPHANE SLIDES.
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- Science Education, 1938, v. 22, n. 5, p. 251, doi. 10.1002/sce.3730220506
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A Study on the Delamination and Flexural Behavior of Carbon- and Aramid-Fiber-Reinforced Epoxy Composites with Silicon Carbide Particle Inclusions.
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- Mechanics of Composite Materials, 2022, v. 57, n. 6, p. 847, doi. 10.1007/s11029-022-10004-7
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Improving the particle distribution and mechanical properties of friction-stir-welded composites by using a smooth pin tool.
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- Mechanics of Composite Materials, 2017, v. 53, n. 4, p. 515, doi. 10.1007/s11029-017-9681-9
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Modeling the Tensile Behavior of Cross-Ply C/SiC Ceramic-Matrix Composites.
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- Mechanics of Composite Materials, 2015, v. 51, n. 3, p. 359, doi. 10.1007/s11029-015-9507-6
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Modeling the Tensile Behavior of Unidirectional C/SiC Ceramic-Matrix Composites.
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- Mechanics of Composite Materials, 2014, v. 49, n. 6, p. 659, doi. 10.1007/s11029-013-9382-y
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Quantitative Evaluation of the Effect of Porosity on the Local Young's Modulus of Isotropic Composites by Using the Laser Optoacoustic Method.
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- Mechanics of Composite Materials, 2013, v. 49, n. 4, p. 411, doi. 10.1007/s11029-013-9357-z
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Fabrication and thermal expansion behavior of a magnesium-matrix composite with a high content of reinforcing SiC particles.
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- Mechanics of Composite Materials, 2011, v. 47, n. 4, p. 427, doi. 10.1007/s11029-011-9220-z
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Strength and fracture properties of advanced SiC-based fibers.
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- Mechanics of Composite Materials, 2006, v. 42, n. 6, p. 527, doi. 10.1007/s11029-006-0063-y
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Attainment of high specific hardness and specific modulus in spark plasma sintered aluminium‐copper‐silicon carbide‐titanium carbide hybrid composite.
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- Materialwissenschaft und Werkstoffechnik, 2021, v. 52, n. 9, p. 965, doi. 10.1002/mawe.202100105
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Production and characterization of boron carbide and silicon carbide reinforced copper‐nickel composites by powder metallurgy method.
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- Materialwissenschaft und Werkstoffechnik, 2021, v. 52, n. 1, p. 32, doi. 10.1002/mawe.202000077
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Mechanical alloying and consolidation of copper‐iron‐silicon carbide nanocomposites.
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- Materialwissenschaft und Werkstoffechnik, 2020, v. 51, n. 12, p. 1700, doi. 10.1002/mawe.202000141
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Role of tool pin profiles on wear characteristics of friction stir processed magnesium alloy ZK60/silicon carbide surface composites.
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- Materialwissenschaft und Werkstoffechnik, 2020, v. 51, n. 2, p. 140, doi. 10.1002/mawe.201900007
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Phases analysis and impact of phases on fracture mechanism of AZ61‐SiC composite.
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- Materialwissenschaft und Werkstoffechnik, 2019, v. 50, n. 10, p. 1242, doi. 10.1002/mawe.201800123
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