Works about SEMICONDUCTOR junctions

Results: 785

Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400687

By:

Telkamp, Sjoerd;
Antonelli, Tommaso;
Todt, Clemens;
Hinderling, Manuel;
Coraiola, Marco;
Haxell, Daniel;
Kate, Sofieke C. ten;
Sabonis, Deividas;
Zeng, Peng;
Schott, Rüdiger;
Cheah, Erik;
Reichl, Christian;
Nichele, Fabrizio;
Krizek, Filip;
Wegscheider, Werner

Publication type:

Article

Interface trap states induced underestimation of Schottky barrier height in metal-MX2 junctions.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00576-y

By:

Jawa, Himani;
Verreck, Devin;
Sun, Zheng;
Sutar, Surajit;
de la Rosa, Cesar Javier Lockhart;
Kar, Gouri Sankar;
Appenzeller, Joerg

Publication type:

Article

Exciton Localization in Two‐Dimensional Semiconductors through Modification of the Dielectric Environment.

Published in:

Physica Status Solidi (B), 2025, v. 262, n. 7, p. 1, doi. 10.1002/pssb.202400588

By:

Muñoz‐Gómez, Kelly Yohana;
Ramírez‐Gómez, Hanz Yecid

Publication type:

Article

Side‐Gate Modulation of Supercurrent in InSb Nanoflag‐Based Josephson Junctions.

Published in:

Physica Status Solidi (B), 2025, v. 262, n. 7, p. 1, doi. 10.1002/pssb.202400534

By:

Turini, Bianca;
Salimian, Sedighe;
Carrega, Matteo;
Paolucci, Federico;
Zannier, Valentina;
Sorba, Lucia;
Heun, Stefan

Publication type:

Article

Application of the Density Matrix Formalism for Obtaining the Channel Density of a Dual Gate Nanoscale Ultra-Thin MOSFET and its Comparison with the Semi-Classical Approach.

Published in:

International Journal of Nanoscience, 2020, v. 19, n. 6, p. N.PAG, doi. 10.1142/S0219581X20500106

By:

Pratap, Surender;
Sarkar, Niladri

Publication type:

Article

NONEQUILIBRIUM GREEN'S FUNCTION BASED QUANTUM TRANSPORT SIMULATION FOR STRAINED-ENGINEERED NANOSCALE TRANSISTORS IN THE PRESENCE OF ELECTRON-PHONON INTERACTIONS.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 327, doi. 10.1142/S0219581X10006909

By:

MAITI, T. K.;
MAITI, C. K.

Publication type:

Article

PULSED LASER ANNEALING OF ULTRA-SHALLOW JUNCTIONS IN SILICON-GERMANIUM.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 341, doi. 10.1142/S0219581X10006922

By:

TAN, L. S.;
TAN, J. Y.;
BEGUM, A.;
HONG, M. H.;
DU, A. Y.;
BHAT, M.;
WANG, X. C.

Publication type:

Article

INFLUENCE OF INHOMOGENEITY OF A MULTILAYER STRUCTURE ON REDISTRIBUTION OF INFUSED DOPANT DURING PRODUCTION - A BIPOLAR TRANSISTOR.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 3, p. 159, doi. 10.1142/S0219581X10006661

By:

PANKRATOV, E. L.

Publication type:

Article

APPLICATION OF EXIT-PLANE WAVE FUNCTION IMAGES IN HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY FOR QUANTITATIVE ANALYSIS OF III–V SEMICONDUCTOR INTERFACES.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 6, p. 723, doi. 10.1142/S0219581X04002668

By:

Mahalingam, K.;
Eyink, K. G.;
Brown, G. J.;
Dorsey, D. L.

Publication type:

Article

Impact of the Nature of the Side-Chains on the Polymer-Fullerene Packing in the Mixed Regions of Bulk Heterojunction Solar Cells.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 32, p. 5913, doi. 10.1002/adfm.201601134

By:

Wang, Tonghui;
Ravva, Mahesh Kumar;
Brédas, Jean‐Luc

Publication type:

Article

Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 21, p. 3696, doi. 10.1002/adfm.201600163

By:

Chen, Anqi;
Zhu, Hai;
Wu, Yanyan;
Chen, Mingming;
Zhu, Yuan;
Gui, Xuchun;
Tang, Zikang

Publication type:

Article

Strain Modulation in Graphene/ZnO Nanorod Film Schottky Junction for Enhanced Photosensing Performance.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 9, p. 1347, doi. 10.1002/adfm.201503905

By:

Liu, Shuo;
Liao, Qingliang;
Lu, Shengnan;
Zhang, Zheng;
Zhang, Guangjie;
Zhang, Yue

Publication type:

Article

Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 20, p. 2972, doi. 10.1002/adfm.201403407

By:

Parui, Subir;
Pietrobon, Luca;
Ciudad, David;
Vélez, Saül;
Sun, Xiangnan;
Casanova, Fèlix;
Stoliar, Pablo;
Hueso, Luis E.

Publication type:

Article

Contents: (Adv. Funct. Mater. 20/2015).

Published in:: Advanced Functional Materials, 2015, v. 25, n. 20, p. 2943, doi. 10.1002/adfm.201570134
Publication type:: Article

Energy Barriers: Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction (Adv. Funct. Mater. 20/2015).

Published in:

Advanced Functional Materials, 2015, v. 25, n. 20, p. 3103, doi. 10.1002/adfm.201570137

By:

Parui, Subir;
Pietrobon, Luca;
Ciudad, David;
Vélez, Saül;
Sun, Xiangnan;
Casanova, Fèlix;
Stoliar, Pablo;
Hueso, Luis E.

Publication type:

Article

Effects of Delocalized Charge Carriers in Organic Solar Cells: Predicting Nanoscale Device Performance from Morphology.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 13, p. 1996, doi. 10.1002/adfm.201402332

By:

Gagorik, Adam G.;
Mohin, Jacob W.;
Kowalewski, Tomasz;
Hutchison, Geoffrey R.

Publication type:

Article

Room-Temperature Printing of Organic Thin-Film Transistors with π-Junction Gold Nanoparticles.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 31, p. 4886, doi. 10.1002/adfm.201400169

By:

Minari, Takeo;
Kanehara, Yuki;
Liu, Chuan;
Sakamoto, Kenji;
Yasuda, Takeshi;
Yaguchi, Asuka;
Tsukada, Shigemi;
Kashizaki, Kei;
Kanehara, Masayuki

Publication type:

Article

The roles of “free” and “trapped” charges in single-crystal rubrene organic field-effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 6, p. 535, doi. 10.1007/s10854-009-9953-9

By:

Kwok, H. L.

Publication type:

Article

In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 476, doi. 10.1007/s10854-008-9685-2

By:

Liang, C. H.;
Tiong, K. K.;
Huang, Y. S.;
Dumcenco, D.;
Ho, C. H.

Publication type:

Article

Enhancement of Faraday rotation in 3D/Bi:YIG/1D photonic heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 493, doi. 10.1007/s10854-008-9689-y

By:

Fujikawa, R.;
Baryshev, A. V.;
Khanikaev, A. B.;
Kim, J.;
Uchida, H.;
Inoue, M.

Publication type:

Article

Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6

By:

Chaldyshev, V. V.;
Shkolnik, A. S.;
Evtikhiev, V. P.;
Holden, T.

Publication type:

Article

Analyzing Surface Relaxation in TEM-Lamella: A Method for Revealing Alloy Concentrations at Strained Semiconductor Interfaces.

Published in:

Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.142

By:

Otto, Frederik;
Niermann, Laura;
Niermann, Tore;
Lehmann, Michael

Publication type:

Article

Crystalline Silcion Carbide Y Junctions Induced by Catalysts Coalescence.

Published in:

2011

By:

Liu, Z;
Srot, V;
Yang, J

Publication type:

Abstract

STEM/EDS Spectral Imaging of Magnetic Tunnel Junction Nano-Devices.

Published in:

2010

By:

Peng Zhang;
Haifeng Wang

Publication type:

Abstract

Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures.

Published in:

Microscopy & Microanalysis, 2007, v. 13, n. 6, p. 493, doi. 10.1017/S1431927607070894

By:

Brian P. Gorman;
Andrew G. Norman;
Yanfa Yan

Publication type:

Article

Heterojunction Photocatalysts Based on 2D Materials: The Role of Configuration.

Published in:

Advanced Sustainable Systems, 2020, v. 4, n. 9, p. 1, doi. 10.1002/adsu.202000130

By:

Su, Qian;
Li, Yao;
Hu, Ran;
Song, Fang;
Liu, Siyuan;
Guo, Cuiping;
Zhu, Shenmin;
Liu, Wenbin;
Pan, Jian

Publication type:

Article

Unique Information about Lubricants.

Published in:

Mechanics & Mechanical Engineering, 2018, v. 22, n. 1, p. 143

By:

VOINOV, Kirill N.;
ESBULATOVA, Altyn Z.

Publication type:

Article

Effect of pre-surface treatments on p-Cu2O/Au Schottky junctions.

Published in:

Journal of the National Science Foundation of Sri Lanka, 2021, v. 49, n. 1, p. 61, doi. 10.4038/jnsfsr.v49i1.8942

By:

Kafi, F. S. B.;
Jayathilaka, K. M. D. C.;
Wijesundera, R. P.;
Siripala, W.

Publication type:

Article

Preparation and Electrical Properties of the Bi0.9La0.1Fe0.9Mn0.1O3/SrTiO3:Nb p-n Heterojunctions.

Published in:

Ferroelectrics, 2009, v. 379, n. 1, p. 136, doi. 10.1080/00150190902851952

By:

Vengalis, Bonifacas;
Devenson, Jelena;
Oginskis, Antanas K.;
Lisauskas, Vaclovas;
Dapkus, Leonas;
Maneikis, Andrius

Publication type:

Article

Reducing Interface Resistance in Semiconductor System Through the Integration of Graphene.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 21, p. 4305, doi. 10.3390/electronics13214305

By:

Hong, Tae Yeong;
Park, Jong Kyung;
Hong, Seul Ki

Publication type:

Article

Large-Scale β -Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 20, p. 4315, doi. 10.3390/electronics12204315

By:

He, Hao;
Zhou, Xinlong;
Liu, Yinchi;
Liu, Wenjing;
Yang, Jining;
Zhang, Hao;
Xie, Genran;
Liu, Wenjun

Publication type:

Article

Modeling of Conduction Mechanisms in Ultrathin Films of Al 2 O 3 Deposited by ALD.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 4, p. 903, doi. 10.3390/electronics12040903

By:

Salas-Rodríguez, Silvestre;
Molina-Reyes, Joel;
Martínez-Castillo, Jaime;
Woo-Garcia, Rosa M.;
Herrera-May, Agustín L.;
López-Huerta, Francisco

Publication type:

Article

Junctionless Transistors: State-of-the-Art.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 7, p. 1174, doi. 10.3390/electronics9071174

By:

Nowbahari, Arian;
Roy, Avisek;
Marchetti, Luca

Publication type:

Article

Facile synthesize of CdS QDs decorated Bi2MoO6/Bi2Mo3O12 heterojunction photocatalysts and enhanced performance of visible light removal of organic pollutants.

Published in:

Environmental Technology, 2021, v. 42, n. 23, p. 3581, doi. 10.1080/09593330.2020.1737243

By:

Wang, Jingling;
Lin, Wensong;
Dong, Manru;
Xing, Yue;
Zhang, Qicheng

Publication type:

Article

Charge-Transfer Induced Magnetic Field Effects of Nano-Carbon Heterojunctions.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06126

By:

Wei Qin;
Maogang Gong;
Shastry, Tejas;
Hersam, Mark C.;
Ren, Shenqiang

Publication type:

Article

Tandem-structured, hot electron based photovoltaic cell with double Schottky barriers.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04580

By:

Young Keun Lee;
Hyosun Lee;
Jeong Young Park

Publication type:

Article

Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep03634

By:

Schreyvogel, Christoph;
Wolfer, Marco;
Hiromitsu Kato;
Schreck, Matthias;
Nebel, Christoph E.

Publication type:

Article

Plasmonic Amplification with Ultra-High Optical Gain at Room Temperature.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep01967

By:

Ning Liu;
Hong Wei;
Jing Li;
Zhuoxian Wang;
Xiaorui Tian;
Anlian Pan;
Hongxing Xu

Publication type:

Article

MODELLING AND SIMULATION FOR SHORT-CHANNEL JUNCTION LESS DOUBLE GATE MOSFETs.

Published in:

i-Manager's Journal on Electronics Engineering, 2021, v. 11, n. 3, p. 12, doi. 10.26634/jele.11.3.18460

By:

DARWIN, S.;
JENIFER, I.

Publication type:

Article

Equivalent Circuit Model to Reach Complicated Surface Photovoltage Transient Shapes in ZnO Thin Films.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 2, p. 1, doi. 10.21272/jnep.16(2).02023

By:

Nadtochiy, A.;
Podolian, A.;
Korotchenkov, O.;
Oberemok, O.;
Kosulya, O.;
Romanyuk, B.

Publication type:

Article

The Use of Marginal Oscillator Detector with Increased Conversion Linearity for Recording Broadband Multiplet Nuclear Quadrupole Resonance Spectra.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 5, p. 05030-1, doi. 10.21272/jnep.13(5).05030

By:

Samila, A. P.

Publication type:

Article

A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 4, p. 1, doi. 10.21272/jnep.8(4(1)).04042

By:

Kumar, A.;
Chaudhry, A.;
Kumar, V.;
Sharma, V.

Publication type:

Article

Erratum: Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles and Molecules.

Published in:

2025

By:

Greten, Lara;
Salzwedel, Robert;
Katzer, Manuel;
Mittenzwey, Henry;
Christiansen, Dominik;
Knorr, Andreas;
Selig, Malte

Publication type:

Correction Notice

Erratum: Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles and Molecules.

Published in:

2025

By:

Greten, Lara;
Salzwedel, Robert;
Katzer, Manuel;
Mittenzwey, Henry;
Christiansen, Dominik;
Knorr, Andreas;
Selig, Malte

Publication type:

Correction Notice

Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles, and Molecules.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 1, p. 1, doi. 10.1002/pssa.202300102

By:

Greten, Lara;
Salzwedel, Robert;
Katzer, Manuel;
Mittenzwey, Henry;
Christiansen, Dominik;
Knorr, Andreas;
Selig, Malte

Publication type:

Article

Hole Injection Characteristics and Annealing Temperature Dependence for Organic Light‐Emitting Diodes Using Spontaneous Polarization.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 24, p. 1, doi. 10.1002/pssa.202300161

By:

Fukazawa, Ryosuke;
Maegawa, Yoshiki;
Morimoto, Masahiro;
Matsubara, Ryosuke;
Kubono, Atsushi;
Naka, Shigeki

Publication type:

Article

Magnetic Field Effect in Hydrogen‐Bonded Semiconductor‐Based Organic Field‐Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202200821

By:

Saadi, Donia;
Yumusak, Cigdem;
Zrinski, Ivana;
Mardare, Andrei Ionut;
Romdhane, Samir;
Sariciftci, Niyazi Serdar;
Irimia-Vladu, Mihai;
Scharber, Markus Clark

Publication type:

Article

Interfacial charge current in a magnetised/normal graphene junction.

Published in:

European Physical Journal B: Condensed Matter, 2012, v. 85, n. 8, p. 1, doi. 10.1140/epjb/e2012-21047-x

By:

Tian, H.;
Yang, Y.;
Wang, J.

Publication type:

Article

Electromagnetic properties of the graphene junctions.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 80, n. 3, p. 379, doi. 10.1140/epjb/e2011-10675-3

By:

Shafranjuk, S. E.

Publication type:

Article

MODELING AT THE NANOMETRIC SCALE OF INTERFACIAL DEFECTS OF A SEMICONDUCTOR HETEROSTRUCTURE IN THE ISOTROPIC AND ANISOTROPIC CASES FOR THE STUDY OF THE INFLUENCE OF STRESSES.

Published in:

Emirates Journal for Engineering Research, 2024, v. 29, n. 1, p. 1

By:

Boussaha, Ahmed;
Mekhloufi, Rafik;
Benbouta, Rachid;
Brioua, Mourad

Publication type:

Article