Works about SEMICONDUCTOR junctions
Results: 750
Implanter, RTP system issues for ultrashallow junction formation.
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- Solid State Technology, 2001, v. 44, n. 9, p. 77
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- Article
Ultrashallow junction formation by ion implant and RTA.
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- Solid State Technology, 1997, v. 40, n. 12, p. 71
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- Article
Rücktitelbild: Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction (Angew. Chem. 33/2024).
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- Angewandte Chemie, 2024, v. 136, n. 33, p. 1, doi. 10.1002/ange.202412574
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- Article
Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction.
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- Angewandte Chemie, 2024, v. 136, n. 33, p. 1, doi. 10.1002/ange.202403333
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- Article
Atomic Sandwiched p‐n Homojunctions.
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- Angewandte Chemie, 2021, v. 133, n. 7, p. 3529, doi. 10.1002/ange.202012734
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- Article
Stable Cocatalyst‐Free BiVO<sub>4</sub> Photoanodes with Passivated Surface States for Photocorrosion Inhibition.
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- Angewandte Chemie, 2020, v. 132, n. 51, p. 23294, doi. 10.1002/ange.202010908
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- Article
Insights into Charge Transfer at an Atomically Precise Nanocluster/Semiconductor Interface.
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- Angewandte Chemie, 2020, v. 132, n. 20, p. 7822, doi. 10.1002/ange.201915074
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Light‐Driven Reversible Intermolecular Proton Transfer at Single‐Molecule Junctions.
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- Angewandte Chemie, 2019, v. 131, n. 12, p. 3869, doi. 10.1002/ange.201813137
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- Article
Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction.
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- Advanced Functional Materials, 2015, v. 25, n. 20, p. 2972, doi. 10.1002/adfm.201403407
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Contents: (Adv. Funct. Mater. 20/2015).
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- Advanced Functional Materials, 2015, v. 25, n. 20, p. 2943, doi. 10.1002/adfm.201570134
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- Article
Energy Barriers: Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction (Adv. Funct. Mater. 20/2015).
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- Advanced Functional Materials, 2015, v. 25, n. 20, p. 3103, doi. 10.1002/adfm.201570137
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Effects of Delocalized Charge Carriers in Organic Solar Cells: Predicting Nanoscale Device Performance from Morphology.
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- Advanced Functional Materials, 2015, v. 25, n. 13, p. 1996, doi. 10.1002/adfm.201402332
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Room-Temperature Printing of Organic Thin-Film Transistors with π-Junction Gold Nanoparticles.
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- Advanced Functional Materials, 2014, v. 24, n. 31, p. 4886, doi. 10.1002/adfm.201400169
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- Article
Rashba spin−orbit coupling effect on tunneling time in semiconductor spintronic junctions.
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- Journal of Materials Science, 2014, v. 49, n. 1, p. 88, doi. 10.1007/s10853-013-7677-y
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- Article
Density-controllable growth of SnO nanowire junction-bridging across electrode for low-temperature NO gas detection.
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- Journal of Materials Science, 2013, v. 48, n. 20, p. 7253, doi. 10.1007/s10853-013-7545-9
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Studies on growth mechanism of HgCdTe epilayer on Si grown by HWE.
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- Journal of Materials Science, 2005, v. 40, n. 24, p. 6453, doi. 10.1007/s10853-005-1710-8
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Water soluble polymer/carbon nanotube bulk heterojunction solar cells.
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- Journal of Materials Science, 2005, v. 40, n. 6, p. 1455, doi. 10.1007/s10853-005-0582-2
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Counterion effects in cyanine heterojunction photovoltaic devices.
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- Journal of Materials Science, 2005, v. 40, n. 6, p. 1353, doi. 10.1007/s10853-005-0564-4
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Analyzing Surface Relaxation in TEM-Lamella: A Method for Revealing Alloy Concentrations at Strained Semiconductor Interfaces.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.142
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- Article
ANALYSIS OF NOISE CHARACTERISTICS OF TUNNEL DIODES.
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- Fluctuation & Noise Letters, 2013, v. 12, n. 3, p. -1, doi. 10.1142/S0219477513500144
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SHOT NOISE SUPPRESSION IN INDIVIDUAL AND SERIES ARRAYS OF MAGNETIC TUNNEL JUNCTIONS.
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- Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 381, doi. 10.1142/S0219477511000648
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Semiconductor Junction Noise Revisited: Where Have all the Physical Noise Sources Gone?
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- Fluctuation & Noise Letters, 2001, v. 1, n. 3, p. C15, doi. 10.1142/S0219477501000421
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- Article
Formulation of charge transport in molecular junctions with time-dependent molecule-leads coupling operators.
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- Fortschritte der Physik / Progress of Physics, 2017, v. 65, n. 6/8, p. n/a, doi. 10.1002/prop.201600048
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- Article
Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns.
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- Journal of Electron Microscopy, 2010, v. 59, n. 5, p. 367, doi. 10.1093/jmicro/dfq016
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- Article
Base drive energy recovery for a silicon bipolar junction transistors.
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2429, doi. 10.1049/iet-pel.2014.0818
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- Article
Thermal test method for high power three-phase grid-connected inverters.
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 9, p. 1670, doi. 10.1049/iet-pel.2014.0152
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- Article
In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00333-5
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1D metallic states at 2D transition metal dichalcogenide semiconductor heterojunctions.
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- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-021-00224-1
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Self-consistent electrical parameter extraction from bias dependent spectral response measurements of III-V multi-junction solar cells.
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- Progress in Photovoltaics, 2015, v. 23, n. 1, p. 37, doi. 10.1002/pip.2392
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Recent advances in high-efficiency IIIV multi-junction solar cells for space applications: ultra triple junction qualification.
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- Progress in Photovoltaics, 2005, v. 13, n. 2, p. 133, doi. 10.1002/pip.610
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Dendrite growth and degradation in multi-junction solar cells.
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- Progress in Photovoltaics, 2005, v. 13, n. 2, p. 157, doi. 10.1002/pip.609
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Using SRIM to calculate the relative damage coefficients for solar cells.
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- Progress in Photovoltaics, 2005, v. 13, n. 2, p. 115, doi. 10.1002/pip.608
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Super-high-efficiency multi-junction solar cells.
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- Progress in Photovoltaics, 2005, v. 13, n. 2, p. 125, doi. 10.1002/pip.606
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Breakeven Criteria for the GaInNAs Junction in GaInP/GaAs/GaInNAs/Ge Four-junction Solar Cells.
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- Progress in Photovoltaics, 2002, v. 10, n. 5, p. 331, doi. 10.1002/pip.430
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Modeling lattice-matched InP-based multijunction solar cells.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2017, v. 25, n. 2, p. 1010, doi. 10.3906/elk-1507-1
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Unique Information about Lubricants.
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- Mechanics & Mechanical Engineering, 2018, v. 22, n. 1, p. 143
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2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts.
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- Advanced Materials Interfaces, 2022, v. 9, n. 35, p. 1, doi. 10.1002/admi.202200075
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Formation of MoO<sub>3</sub>/Organic Interfaces.
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- Advanced Materials Interfaces, 2022, v. 9, n. 2, p. 1, doi. 10.1002/admi.202101423
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- Article
Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization.
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- Advanced Materials Interfaces, 2021, v. 8, n. 20, p. 1, doi. 10.1002/admi.202101004
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- Article
Interface Engineering of Metal‐Oxide Field‐Effect Transistors for Low‐Drift pH Sensing.
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- Advanced Materials Interfaces, 2021, v. 8, n. 20, p. 1, doi. 10.1002/admi.202100314
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- Article
In Situ Interface Engineering with a Spiro‐OMeTAD/CoO Hierarchical Structure via One‐Step Spin‐Coating for Efficient and Stable Perovskite Solar Cells.
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- Advanced Materials Interfaces, 2021, v. 8, n. 11, p. 1, doi. 10.1002/admi.202002041
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- Article
Unraveling Activity and Decomposition Pathways of [FeFe] Hydrogenase Mimics Covalently Bonded to Silicon Photoelectrodes.
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- Advanced Materials Interfaces, 2021, v. 8, n. 10, p. 1, doi. 10.1002/admi.202001961
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- Article
Solid‐State Electrolyte Dielectrics Based on Exceptional High‐k P(VDF‐TrFE‐CTFE) Terpolymer for High‐Performance Field‐Effect Transistors.
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- Advanced Materials Interfaces, 2020, v. 7, n. 17, p. 1, doi. 10.1002/admi.202000842
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- Article
Dipolar Switching of Charge‐Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water‐Induced Instabilities of Organic Devices.
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- Advanced Materials Interfaces, 2020, v. 7, n. 12, p. 1, doi. 10.1002/admi.202000654
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- Article
3D Hierarchical Gallium Oxynitride Nanostructures Decorated with Ag Nanoparticles Applied as Recyclable Substrates for Ultrasensitive SERS Sensing.
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- Advanced Materials Interfaces, 2019, v. 6, n. 16, p. N.PAG, doi. 10.1002/admi.201900659
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- Article
Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions.
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- Advanced Materials Interfaces, 2019, v. 6, n. 1, p. N.PAG, doi. 10.1002/admi.201801380
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Photoinduced Orientation‐Dependent Interlayer Carrier Transportation in Cross‐Stacked Black Phosphorus van der Waals Junctions.
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- Advanced Materials Interfaces, 2018, v. 5, n. 20, p. N.PAG, doi. 10.1002/admi.201800964
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Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions.
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- Advanced Materials Interfaces, 2018, v. 5, n. 12, p. 1, doi. 10.1002/admi.201800231
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Tailoring Photovoltage Response at SrRuO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures.
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- Advanced Materials Interfaces, 2016, v. 3, n. 22, p. n/a, doi. 10.1002/admi.201600527
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Toward the Atomically Abrupt Interfaces of SiO <sub>x</sub>/Semiconductor Junctions.
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- Advanced Materials Interfaces, 2016, v. 3, n. 11, p. n/a, doi. 10.1002/admi.201500510
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- Article