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A Review of Bohemian Garnet (Cr-bearing Pyrope) from the Czech Republic.
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- Journal of Gemmology, 2024, v. 39, n. 3, p. 242, doi. 10.15506/JoG.2024.39.3.242
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- Article
Correction: Tuning the physical, structural, optical, and photoluminescence properties of the zinc–aluminum phosphate network utilizing barium and lead ions.
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- 2024
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- Publication type:
- Correction Notice
An Investigation of the Effect of Adding KSCN on the UV-Visible Absorption Behaviour of Chitosan-based Iodophor.
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- Oriental Journal of Chemistry, 2024, v. 40, n. 4, p. 1017, doi. 10.13005/ojc/400411
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- Article
Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs.
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- Semiconductors, 2024, v. 58, n. 3, p. 263, doi. 10.1134/S1063782624030138
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- Article
Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them.
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- Semiconductors, 2024, v. 58, n. 3, p. 222, doi. 10.1134/S1063782624030059
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- Article
Luminescent Binuclear Eu(III) and Tb(III) Complexes Based on 3,6-bis(Diphenylphosphinyl)Pyridazine.
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- Journal of Structural Chemistry, 2024, v. 65, n. 8, p. 1612, doi. 10.1134/S0022476624080122
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- Article
Pb<sup>2+</sup>- and Sn<sup>2+</sup>-Doped (1-Phenylpiperazine)ZnBr<sub>4</sub> Single Crystal with Highly Efficient Light Emission.
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- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6376, doi. 10.1007/s11664-024-11362-9
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- Article
Preparation, Characterization, Photoluminescence and Thermoluminescence Studies of Li<sub>2−3x</sub>Ln<sub>x</sub>GeTeO<sub>6</sub> (Ln = Eu<sup>3+</sup>, Tb<sup>3+</sup>; x = 0.0, 0.02, 0.05, 0.075 and 0.1).
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- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6358, doi. 10.1007/s11664-024-11334-z
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- Article
Study of Luminescence Behavior in Dy<sup>3+</sup>-Activated Ba<sub>3</sub>Ca<sub>2</sub>(PO<sub>4</sub>)<sub>3</sub>F.
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- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5926, doi. 10.1007/s11664-024-11152-3
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- Article
Photoluminescence of Hg<sub>0.3</sub>Cd<sub>0.7</sub>Te and Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te Epitaxial Films.
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- Semiconductors, 2024, v. 58, n. 2, p. 176, doi. 10.1134/S1063782624020143
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- Article
Luminescent Properties of Ordered Arrays of Silicon Disk-Like Resonators with Embedded GeSi Quantum Dots.
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- Semiconductors, 2024, v. 58, n. 2, p. 180, doi. 10.1134/S1063782624020155
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- Article
Peculiarities of Photoinduced Heating of Perovskite Nanocrystals with Effective Anti-Stokes Photoluminescence under Near-Resonant Laser Excitation.
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- Semiconductors, 2024, v. 58, n. 2, p. 170, doi. 10.1134/S1063782624020131
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- Article
Interface and Size Effects of Amorphous Si/Amorphous Silicon Oxynitride Multilayer Structures on the Photoluminescence Spectrum.
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- Coatings (2079-6412), 2024, v. 14, n. 8, p. 977, doi. 10.3390/coatings14080977
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- Article
Large Enhancement of Photoluminescence Obtained in Thin Polyfluorene Films of Optimized Microstructure.
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- Polymers (20734360), 2024, v. 16, n. 16, p. 2278, doi. 10.3390/polym16162278
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- Article
The Excited‐State N−H Tautomerization Rate in Free‐Base Corroles.
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- Chemistry - A European Journal, 2024, v. 30, n. 48, p. 1, doi. 10.1002/chem.202401709
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- Article
Two Branched π-Conjugated Polyynes: Synthesis and Photophysical Properties.
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- Russian Journal of General Chemistry, 2024, v. 94, n. 7, p. 1704, doi. 10.1134/S1070363224070132
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- Article
Synthesis of Positional Isomers and Photophysical Properties of Pyridines with Tricyanobutadiene Fragment Containing Aryl and Trifluoromethyl Substituents.
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- Russian Journal of General Chemistry, 2024, v. 94, n. 7, p. 1659, doi. 10.1134/S1070363224070077
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- Article
Investigation of the Cr<sup>3+</sup> Impurity Luminescence in Proton-Irradiated β-Ga<sub>2</sub>O<sub>3</sub>.
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- Semiconductors, 2024, v. 58, n. 1, p. 8, doi. 10.1134/S1063782624010020
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- Article
Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 278, doi. 10.15407/spqeo26.03.278
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- Article
Thermostimulated luminescence and photoluminescence of microcrystalline zinc sulphide ZnS:Cu.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 422, doi. 10.15407/spqeo25.04.422
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- Article
Luminescent properties of cadmium sulfide nanocrystals grown from gas phase.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 413, doi. 10.15407/spqeo25.04.413
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- Article
Photoluminescence of melanin-based nanocomposites with fullerene derivative.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 1, p. 049, doi. 10.15407/spqeo25.01.049
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- Article
Light-emitting properties of BN synthesized by different techniques.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 193, doi. 10.15407/spqeo23.02.193
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- Article
Optically detected magnetic resonance study of relaxation/emission processes in the nanoparticle-polymer composite.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 310, doi. 10.15407/spqeo22.03.310
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- Article
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 465, doi. 10.15407/spqeo20.04.465
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- Article
Preparation and study of porous Si surfaces obtained using the electrochemical method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 385, doi. 10.15407/spqeo20.04.385
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- Article
Ellipsometry and optical spectroscopy of low-dimensional family TMDs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 284, doi. 10.15407/spqeo20.03.284
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- Article
On determination of Cd<sub>1-x</sub>Zn<sub>x</sub>Te composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 305, doi. 10.15407/spqeo20.03.305
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- Article
Nanograin boundaries and silicon carbide photoluminescence.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 344, doi. 10.15407/spqeo20.03.344
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- Article
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250
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- Article
Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 191, doi. 10.15407/spqeo20.02.191
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- Article
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250
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- Publication type:
- Article
Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 191, doi. 10.15407/spqeo20.02.191
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- Article
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 14, doi. 10.15407/spqeo19.01.014
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- Article
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 62, doi. 10.15407/spqeo19.01.062
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- Article
Characterization of grain boundaries in CdTe polycrystalline films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 428, doi. 10.15407/spqeo18.04.428
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- Article
Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 324, doi. 10.15407/spqeo18.03.324
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- Article
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 2, p. 209, doi. 10.15407/spqeo18.02.209
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- Article
About self-activated orange emission in ZnO.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 2, p. 134, doi. 10.15407/spqeo18.02.134
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- Article
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 71
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- Article
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si<sub>1-x</sub>C<sub>x</sub>:H films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 63
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- Article
Structural and optical properties of Zn<sub>1-x</sub>Co<sub>x</sub>O thin films prepared by RF reactive sputtering technique.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 353
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- Article
Photoluminescence of As<sub>2</sub>S<sub>3</sub> doped with Cr and Yb.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 341
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- Article
Nickel-induced enhancement of photoluminescence in nc-Si-SiO<sub>x</sub> nanostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 336
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- Article
Influence of weak magnetic fields treatment on photoluminescence of GaAs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 272
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- Article
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 227
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- Article
Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 75
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- Article
Comparative studies of optical absorption, photoluminescence and EPR spectra of PbMnI<sub>2</sub> bulk layers and nanocrystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 41
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- Article
Dislocation emission caused by different types of nanoscale deformation defects in CdTe.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 29
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- Article
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 273
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- Article