Works about MODULATION-doped field-effect transistors

Results: 1316

A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 7, p. 3863, doi. 10.1002/cta.4327

By:

Gong, Tingwei;
Cheng, Zhiqun;
Le, Chao;
Ni, Zhekan;
Xuan, Xuefei;
Zheng, Bangjie;
Wang, Junqiang

Publication type:

Article

Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier.

Published in:

Metrology, 2025, v. 4, n. 2, p. 21, doi. 10.3390/metrology5020021

By:

Orr, Gilad;
Azoulay, Moshe;
Golan, Gady;
Burger, Arnold

Publication type:

Article

Can modifier gene mutations improve the predictive value of the modified Iron Avidity Index in Type 1 Hereditary Haemochromatosis?

Published in:

Liver International, 2016, v. 36, n. 11, p. 1713, doi. 10.1111/liv.13153

By:

Zanella, Isabella;
Lorenzo, Diego Di;
Biasiotto, Giorgio

Publication type:

Article

Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT's.

Published in:

International Journal of Nanoscience, 2021, v. 20, n. 1, p. N.PAG, doi. 10.1142/S0219581X2150006X

By:

Soufiane, Derrouiche

Publication type:

Article

Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness.

Published in:

International Journal of Nanoscience, 2020, v. 19, n. 6, p. N.PAG, doi. 10.1142/S0219581X20500118

By:

Verma, Yogesh Kumar;
Mishra, Varun;
Gupta, Santosh Kumar

Publication type:

Article

OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 721, doi. 10.1142/S0219581X06005054

By:

YUXIN ZENG;
WEI LIU;
FUHUA YANG;
PING XU;
PINGHENG TAN;
HOUZHI ZHENG;
YIPING ZENG;
YINGJIE XING;
DAPENG YU

Publication type:

Article

Irradiation effects on AlGaN HFET devices and GaN layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 64, doi. 10.1007/s10854-008-9589-1

By:

Gnanapragasam, Sonia;
Richter, Eberhard;
Brunner, Frank;
Denker, Andrea;
Lossy, Richard;
Mai, Michael;
Lenk, Friedrich;
Opitz-Coutureau, Jörg;
Pensl, Gerhard;
Schmidt, Jens;
Zeimer, Ute;
Wang, Liun;
Krishnan, Baskar;
Weyers, Markus;
Würfl, Jaochim;
Tränkle, Günther

Publication type:

Article

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x

By:

Nakajima, Atsushi;
Horio, Kazushige

Publication type:

Article

High temperature assessment of nitride-based devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1

By:

Cuerdo, R.;
Pedrós, J.;
Navarro, A.;
Braña, A. F.;
Pau, J. L.;
Muñoz, E.;
Calle, F.

Publication type:

Article

Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy.

Published in:

2019

By:

Grassman, T. J.;
Galiano, K.;
Deitz, J. I.;
Carnevale, S. D.;
Gleason, D. A.;
Zhang, Z.;
Ringel, S. A.;
Arehart, A. R.;
Pelz, J. P.

Publication type:

Abstract

Quantifying polarization fields and sheet charge in III-nitride HEMT devices using off-axis electron holography.

Published in:

2012

By:

Johnson, M.R.;
Smith, D.J.;
Zhou, L.;
McCartney, M.R.;
Cullen, D.A.

Publication type:

Abstract

Characterization of Localized Degradation in Reverse-Biased GaN HEMTs by Scanning Transmission Electron Microscopy and Electron Holography.

Published in:

2010

By:

Cullen, David A.;
Smith, David J.;
Stocco, Antonio;
Meneghesso, Gaudenzio;
Zanoni, Enrico;
McCartney, Martha R.

Publication type:

Abstract

A 6–18 GHz Low-Noise Amplifier with 19 dBm OP 1dB and 2.6 ± 0.3 dB NF in 0.15 μm GaAs Process.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 8, p. 1600, doi. 10.3390/electronics14081600

By:

Wang, Xiyang;
Men, Tao;
Cheng, Buwen

Publication type:

Article

Cryogenic MMIC Low-Noise Amplifiers for Radio Telescope Applications.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 8, p. 1572, doi. 10.3390/electronics14081572

By:

Wang, Haohui;
Chen, Maozheng

Publication type:

Article

TCAD-Based Analysis on the Impact of AlN Interlayer in Normally-off AlGaN/GaN MISHEMTs with Buried p-Region.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 2, p. 313, doi. 10.3390/electronics14020313

By:

Hamady, Saleem;
Beydoun, Bilal;
Morancho, Frédéric

Publication type:

Article

Electro-Thermal Co-Optimization Design of GaN MMIC PA.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 23, p. 4796, doi. 10.3390/electronics13234796

By:

Chen, Xinhuang;
Li, Bin;
Mao, Fengyuan;
Wu, Zhaohui

Publication type:

Article

The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 20, p. 4038, doi. 10.3390/electronics13204038

By:

Kim, Junhyung;
Lee, Gyejung;
Cho, Kyujun;
Park, Jong Yul;
Min, Byoung-Gue;
Jeong, Junhyung;
Ji, Hong-Gu;
Chang, Woojin;
Lee, Jong-Min;
Kang, Dong-Min

Publication type:

Article

Effects of a Spike-Annealed HfO 2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 14, p. 2783, doi. 10.3390/electronics13142783

By:

Lee, Gyuhyung;
Yang, Jeongyong;
Yeom, Min Jae;
Yoon, Sisung;
Yoo, Geonwook

Publication type:

Article

Compact Internally Matched High-Power Power Amplifier with a Wide Frequency Band of 0.8–2 GHz.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 14, p. 2687, doi. 10.3390/electronics13142687

By:

Li, Caoyu;
Zhang, Ziliang;
Su, Xiang;
Li, Yue;
Liang, Xinru;
Pei, Yi;
Chen, Changchang;
Xu, Yuehang

Publication type:

Article

Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 13, p. 2616, doi. 10.3390/electronics13132616

By:

Kim, Jihoon;
Han, Seoungyoon;
Kim, Bo-Bae;
Lee, Mun-Kyo;
Lee, Bok-Hyung

Publication type:

Article

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 13, p. 2490, doi. 10.3390/electronics13132490

By:

Lee, Hsin-Jung;
Lee, Cheng-Che;
Pan, Hong-Ru;
Kuan, Chieh-Hsiung

Publication type:

Article

Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 12, p. 2350, doi. 10.3390/electronics13122350

By:

Ackermann, Valentin;
Mohamad, Blend;
El Rammouz, Hala;
Maurya, Vishwajeet;
Frayssinet, Eric;
Cordier, Yvon;
Charles, Matthew;
Lefevre, Gauthier;
Buckley, Julien;
Salem, Bassem

Publication type:

Article

Research on the Gunn Oscillation Effect of GaN HEMT with Field Plate Structure in the Terahertz Frequency Band.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 12, p. 2235, doi. 10.3390/electronics13122235

By:

Yuan, Ruicong;
Wu, Jiamin;
Wang, Lin

Publication type:

Article

Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 11, p. 2143, doi. 10.3390/electronics13112143

By:

Liu, An-Chen;
Chen, Pei-Tien;
Chuang, Chia-Hao;
Chen, Yan-Chieh;
Chen, Yan-Lin;
Chen, Hsin-Chu;
Chang, Shu-Tong;
Huang, I-Yu;
Kuo, Hao-Chung

Publication type:

Article

Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 10, p. 1840, doi. 10.3390/electronics13101840

By:

Paszkiewicz, Bartłomiej K.;
Paszkiewicz, Bogdan;
Dziedzic, Andrzej

Publication type:

Article

Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 7, p. 1265, doi. 10.3390/electronics13071265

By:

Li, Ke;
Gu, Yitian;
Guo, Haowen;
Zou, Xinbo

Publication type:

Article

Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 7, p. 1203, doi. 10.3390/electronics13071203

By:

Kim, Chul-Min;
Yoon, Hyun-Soo;
Kim, Jong-Soo;
Kim, Nam-Joon

Publication type:

Article

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 3, p. 653, doi. 10.3390/electronics13030653

By:

Lv, Beibei;
Zhang, Lixing;
Mo, Jiongjiong

Publication type:

Article

Steady-State Temperature-Sensitive Electrical Parameters' Characteristics of GaN HEMT Power Devices.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 2, p. 363, doi. 10.3390/electronics13020363

By:

Wang, Kaihong;
Zhu, Yidi;
Zhao, Hao;
Zhao, Ruixue;
Zhu, Binxin

Publication type:

Article

Investigation of Nano-Heat-Transfer Variability of AlGaN/GaN-Heterostructure-Based High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 1, p. 164, doi. 10.3390/electronics13010164

By:

Mzoughi, Haikel;
Nasri, Faouzi;
Almoneef, Maha;
Soltani, Sonia;
Mbarek, Mohamed;
Guizani, Amenallah

Publication type:

Article

Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 21, p. 4435, doi. 10.3390/electronics12214435

By:

Tian, Zhiwen;
Ji, Xuan;
Yang, Dongwei;
Liu, Pei

Publication type:

Article

Investigation of the Effect of Different SiN x Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 20, p. 4336, doi. 10.3390/electronics12204336

By:

Hsu, Che-Wei;
Lin, Yueh-Chin;
Lee, Ming-Wen;
Chang, Edward-Yi

Publication type:

Article

Highly Efficient GaN Doherty Power Amplifier for N78 Sub-6 GHz Band 5G Applications.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 19, p. 4001, doi. 10.3390/electronics12194001

By:

Eid, Mohammed A. Elsayed;
Abouelnaga, Tamer G.;
Ibrahim, Hamed A.;
Hamad, Ehab K. I.;
Al-Gburi, Ahmed Jamal Abdullah;
Alghamdi, Thamer A. H.;
Alathbah, Moath

Publication type:

Article

High-Efficiency GaN-Based Power Amplifiers for Envelope Nonlinearities' Mitigation in VHF Wideband Polar-Mode Transmitters.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 18, p. 3866, doi. 10.3390/electronics12183866

By:

Patiño-Gómez, Moisés;
Ortega-González, Francisco-Javier

Publication type:

Article

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 14, p. 3044, doi. 10.3390/electronics12143044

By:

Chakraborty, Surajit;
Amir, Walid;
Kwon, Hyuk-Min;
Kim, Tae-Woo

Publication type:

Article

Design and Comparative Analysis of an Ultra-Highly Efficient, Compact Half-Bridge LLC Resonant GaN Converter for Low-Power Applications.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 13, p. 2850, doi. 10.3390/electronics12132850

By:

Faizan, Muhammad;
Wang, Xiaolei;
Yousaf, Muhammad Zain

Publication type:

Article

Threshold Voltage Measurement Protocol "Triple Sense" Applied to GaN HEMTs.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 11, p. 2529, doi. 10.3390/electronics12112529

By:

Grossl Bade, Tamiris;
Hamad, Hassan;
Lambert, Adrien;
Morel, Hervé;
Planson, Dominique

Publication type:

Article

Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 9, p. 2033, doi. 10.3390/electronics12092033

By:

Horng, Ray-Hua;
Yeh, Hsiao-Yun;
Tumilty, Niall

Publication type:

Article

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 9, p. 2007, doi. 10.3390/electronics12092007

By:

Doublet, Martin;
Defrance, Nicolas;
Okada, Etienne;
Pace, Loris;
Duquesne, Thierry;
Emilien, Bouyssou;
Yvon, Arnaud;
Idir, Nadir;
De Jaeger, Jean-Claude

Publication type:

Article

A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper).

Published in:

Electronics (2079-9292), 2023, v. 12, n. 8, p. 1771, doi. 10.3390/electronics12081771

By:

Crupi, Giovanni;
Latino, Mariangela;
Gugliandolo, Giovanni;
Marinković, Zlatica;
Cai, Jialin;
Bosi, Gianni;
Raffo, Antonio;
Fazio, Enza;
Donato, Nicola

Publication type:

Article

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 6, p. 1473, doi. 10.3390/electronics12061473

By:

Ji, Qizheng;
Liu, Jun;
Yang, Ming;
Hu, Xiaofeng;
Wang, Guangfu;
Qiu, Menglin;
Liu, Shanghe

Publication type:

Article

The GaN Breakthrough for Sustainable and Cost-Effective Mobility Electrification and Digitalization.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 6, p. 1436, doi. 10.3390/electronics12061436

By:

Scrimizzi, Filippo;
Cammarata, Federica;
D'Agata, Giuseppe;
Nicolosi, Gabriele;
Musumeci, Salvatore;
Rizzo, Santi Agatino

Publication type:

Article

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 6, p. 1424, doi. 10.3390/electronics12061424

By:

Ding, Xiaoyu;
Yuan, Xu;
Ju, Tao;
Yu, Guohao;
Zhang, Bingliang;
Du, Zhongkai;
Zeng, Zhongming;
Zhang, Baoshun;
Zhang, Xinping

Publication type:

Article

Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 5, p. 1087, doi. 10.3390/electronics12051087

By:

An, Yuan;
Ren, Kailin;
Yin, Luqiao;
Zhang, Jianhua

Publication type:

Article

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 4, p. 1049, doi. 10.3390/electronics12041049

By:

Pharkphoumy, Sakhone;
Janardhanam, Vallivedu;
Jang, Tae-Hoon;
Shim, Kyu-Hwan;
Choi, Chel-Jong

Publication type:

Article

Impact of Output Conductance on Current-Gain Cut-Off Frequency in In x Ga 1-x As/In 0.52 Al 0.48 As Quantum-Well High-Electron-Mobility Transistors on InP Substrate.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 2, p. 259, doi. 10.3390/electronics12020259

By:

Kim, Hyo-Jin;
Lee, In-Geun;
Jo, Hyeon-Bhin;
Rho, Tae-Beom;
Tsutsumi, Takuya;
Sugiyama, Hiroki;
Matsuzaki, Hideaki;
Lee, Jae-Hak;
Kim, Tae-Woo;
Kim, Dae-Hyun

Publication type:

Article

A Novel Ring-Gate AlGaN/GaN HEMT Device and Electrode Structure Optimization.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 20, p. 3329, doi. 10.3390/electronics11203329

By:

Zhu, Yanxu;
Song, Xiaomeng;
Li, Jianwei;
Li, Jinheng;
Fei, Baoliang;
Li, Peiyang;
Li, Fajun

Publication type:

Article

Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 19, p. 3013, doi. 10.3390/electronics11193013

By:

Jeong, Jaeyong;
Geum, Dae-Myeong;
Kim, SangHyeon

Publication type:

Article

Experimental Realization of 16-Pixel Terahertz Receiver Front-End Based on Bulk Silicon MEMS Power Divider and AlGaN/GaN HEMT Linear Detector Array.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 15, p. 2305, doi. 10.3390/electronics11152305

By:

Zhu, Kaiqiang;
Ding, Qingfeng;
Mao, Tong;
Tang, Xiuming;
Xiao, Yu;
Qin, Hua;
Sun, Houjun

Publication type:

Article

Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11131958

By:

Song, Wenhan;
Guo, Haowen;
Gu, Yitian;
Zhou, Junmin;
Sui, Jin;
Chen, Baile;
Huang, Wei;
Zou, Xinbo

Publication type:

Article