Works about METAL oxide semiconductor field-effect transistors

Results: 2596

Efficiency Enhancement in DC‐DC Boost Converters Using WBG Switches Through PSO Optimized FOPID Controller for Solar Systems.

Published in:

Advanced Control for Applications, 2025, v. 7, n. 2, p. 1, doi. 10.1002/adc2.70016

By:

Rani Jose, Bini;
Chacko, Mariamma;
Kuttomparambil, Haseena

Publication type:

Article

Amorphous Ga2O3 Semiconductor: A New Solution for Robust X‐Ray Dosimeters.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 24, p. 1, doi. 10.1002/adfm.202421730

By:

Shao, Hang;
Zou, Jiahao;
Liang, Huili;
Zhu, Rui;
Zhang, Yonghui;
Zhan, Xiaozhi;
Zhu, Tao;
Zhang, Jihua;
Li, Yuan;
Zhang, Guangyu;
Mei, Zengxia

Publication type:

Article

pH Monitoring using BESOI MOSFET with different Sensing Regions.

Published in:

Journal of Integrated Circuits & Systems, 2025, v. 20, n. 1, p. 1, doi. 10.29292/jics.v20i1.935

By:

Duarte, Pedro H.;
Rangel, Ricardo C.;
Martino, Joao A.

Publication type:

Article

基于Si和SiC器件混合的并网变流器及其调控策略研究.

Published in:

Electric Drive, 2025, v. 55, n. 6, p. 36, doi. 10.19457/j.1001-2095.dqcd25517

By:

朱远哲;
王玲;
吴争荣;
吕鸿;
肖凡

Publication type:

Article

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400854

By:

Lee, Taeeun;
Jung, Yusup;
Park, Jun Young;
Kim, Sujin;
Kyoung, Sinsu;
Woo, Sola

Publication type:

Article

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400843

By:

Chen, Sihan;
Zhang, Yue;
King, William P.;
Bashir, Rashid;
van der Zande, Arend M.

Publication type:

Article

In‐Sensor Computing‐Based Smart Sensing Architecture Implemented Using a Dual‐Gate Metal‐Oxide Thin‐Film Transistor Technology.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400572

By:

Lei, Tengteng;
Hu, Yushen;
Xie, Xinying;
Shi, Runxiao;
Wong, Man

Publication type:

Article

Design and testing of a pulsed laser system for single event effects analysis on semiconductor devices.

Published in:

Canadian Journal of Chemistry, 2025, v. 103, n. 6, p. 270, doi. 10.1139/cjc-2024-0103

By:

Elash, Christopher J.;
Pour-Momen, Peiman;
Shi, Shuting;
Belev, George;
Sammynaiken, R.;
Chen, Li

Publication type:

Article

Experimental and numerical investigations on amalgamation of mixed frequency carrier based asymmetrical 15 level multilevel inverter.

Published in:

Electrical Engineering, 2025, v. 107, n. 5, p. 5861, doi. 10.1007/s00202-024-02854-2

By:

Paramasivan, Muthukumar;
Prasad, T. Narasimha;
Vanchinathan, K.

Publication type:

Article

Advanced dual-switch converter with proportional integral technique for enhanced efficiency and power quality in electric vehicle energy storage.

Published in:

Electrical Engineering, 2025, v. 107, n. 5, p. 6051, doi. 10.1007/s00202-024-02807-9

By:

Edwin Isaac Raj, A.;
Carmel Sobia, M.;
Ravindran, M.

Publication type:

Article

Enhanced VDMOS design with reduced parasitic effect.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 19, p. 1, doi. 10.1142/S021797922550167X

By:

Prasad, Madhulika;
Sahu, Satish Kumar;
Parmar, Onika

Publication type:

Article

A Sequential-Interval Optimal Sampling Strategy Based on Reliability Prediction Under Wiener Process.

Published in:

Mathematics (2227-7390), 2025, v. 13, n. 11, p. 1817, doi. 10.3390/math13111817

By:

Ren, Mengying;
Tian, Yubin;
Liu, Xingyu;
Guo, Furi

Publication type:

Article

A Gate Oxide Degradation and Junction Temperature Evaluation Method for SiC MOSFETs Based on an On-State Resistance Model.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 11, p. 2278, doi. 10.3390/electronics14112278

By:

Wang, Peng;
Zhao, Zhigang

Publication type:

Article

Active Gate Drive Based on Negative Feedback for SiC MOSFETs to Suppress Crosstalk Parasitic Oscillation and Avoid Decreased Efficiency.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 11, p. 2100, doi. 10.3390/electronics14112100

By:

Shao, Tiancong;
Sun, Yuhan;
Bai, Zhitong;
Zheng, Trillion Q.;
Zhang, Yajing;
Jia, Pengyu

Publication type:

Article

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 11, p. 805, doi. 10.3390/nano15110805

By:

Yu, Mengyuan;
Shen, Yi;
Ma, Hongping;
Zhang, Qingchun

Publication type:

Article

Frequency Domain Model of a Resonant LCC-S Converter for High-Frequency Wireless Power Transfer Applications Considering Switching Losses in MOSFETs Bridge.

Published in:

Applied Sciences (2076-3417), 2025, v. 15, n. 11, p. 5878, doi. 10.3390/app15115878

By:

Bertolini, Vittorio;
Faba, Antonio;
Dionigi, Marco;
Cardelli, Ermanno

Publication type:

Article

A Reconfigurable IPT System With CC‐CV Output Characteristics and High Misalignment Tolerance.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 6, p. 3345, doi. 10.1002/cta.4311

By:

Gong, Zhaowei;
Zhao, Man;
Yang, Yajing;
Zhang, Ningchao;
Fu, Yongsheng

Publication type:

Article

A Novel Wiener‐Type Dynamic Neural Network Method for Large Signal Modeling of Power Amplifiers.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 6, p. 3529, doi. 10.1002/cta.4304

By:

Liu, Wenyuan;
Su, Yi;
Wang, Shilin;
Zhang, Wei;
Yan, Shuxia;
Feng, Feng

Publication type:

Article

Realization of a New CMOS Transconductance Boosted Voltage Differencing Inverting Buffered Amplifier (TB-VDIBA) using Series Parallel Current Mirror (SPCM).

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 10, p. 1, doi. 10.1142/S0218126625502275

By:

Gupta, Priyanka;
Bansal, Sidharth;
Singla, Laxya;
Gupta, Jyoti

Publication type:

Article

Performance improvement of reconfiguration strategies in photovoltaic array by replacement of blocking diodes with MOSFETs.

Published in:

International Journal of Modelling & Simulation, 2025, v. 45, n. 3, p. 1060, doi. 10.1080/02286203.2023.2254189

By:

Gautam, Swati;
Mehta, Gitanjali;
Anjum, Shahroz

Publication type:

Article

Losses and Efficiency Evaluation of the Shunt Active Filter for Renewable Energy Generation.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1972, doi. 10.3390/electronics14101972

By:

Voldoire, Adrien;
Phulpin, Tanguy;
Alali, Mohamad Alaa Eddin

Publication type:

Article

Impact of Electromagnetic Pulses on N-Type MOSFET Reliability: Experimental Insights.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1937, doi. 10.3390/electronics14101937

By:

Zhu, Yaxing;
Zhao, Dongyan;
Dai, Fei;
Chen, Yanning;
Liu, Fang;
Wu, Bo;
Zhao, Yang;
Ren, Bocong;
Wang, Yanhong;
Liang, Yingzong;
Wang, Junpeng

Publication type:

Article

Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach.

Published in:

Processes, 2025, v. 13, n. 5, p. 1544, doi. 10.3390/pr13051544

By:

Geng, Mingqiang;
Guo, Jianming;
Sun, Yuting;
Gao, Dawei;
Ni, Dong

Publication type:

Article

Design of High-Speed Motor System for EV Based on 1200 V SiC-MOSFET Power Module.

Published in:

Actuators, 2025, v. 14, n. 5, p. 216, doi. 10.3390/act14050216

By:

Zhou, Kun;
Gu, Minglei;
Zheng, Yu

Publication type:

Article

Chaos Anticontrol and Switching Frequency Impact on MOSFET Junction Temperature and Lifetime.

Published in:

Actuators, 2025, v. 14, n. 5, p. 203, doi. 10.3390/act14050203

By:

Morel, Cristina;
Morel, Jean-Yves

Publication type:

Article

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 508, doi. 10.3390/mi16050508

By:

Li, Mingyue;
Qiu, Zhaofeng;
Li, Tianci;
Kang, Yi;
Lu, Shan;
Hu, Xiarong

Publication type:

Article

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash.

Published in:

Biomimetics (2313-7673), 2025, v. 10, n. 5, p. 318, doi. 10.3390/biomimetics10050318

By:

Hwang, Hwiho;
Kim, Gyeonghae;
Yu, Dayeon;
Kim, Hyungjin

Publication type:

Article

Electric-field-guided 3D manipulation of liquid metal microfleas.

Published in:

Soft Materials, 2022, v. 20, n. 2, p. 129, doi. 10.1080/1539445X.2021.1926283

By:

Wang, Yongxin;
Kuai, Yanbing;
Zhang, Guangqiang;
Zhang, Hairui;
Cong, Jiawei;
Xu, Yunli;
Yi, Lizhi;
Liu, Min;
Liu, Yiman

Publication type:

Article

Low-power, high-performance SOI CMOS.

Published in:

Solid State Technology, 2001, v. 44, n. 11, p. 63

By:

Pelloie, Jean-Lac;
Auberton-Herve, Andre

Publication type:

Article

Low-energy plasma-enhanced CVD facilities high mobility SiGe.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 30

By:

Demmin, Jeffrey C.

Publication type:

Article

Gd oxide may bring better GaAs, more talk.

Published in:

Solid State Technology, 1999, v. 42, n. 6, p. 28

By:

Burggraaf, Pieter

Publication type:

Article

Double-gate MOSFET demonstrates 25-nm thick channel.

Published in:

Solid State Technology, 1998, v. 41, n. 3, p. 24

By:

K.D.

Publication type:

Article

Noise Performance Evaluation of Recessed-Drain/Source Junctionless Gate-All-Around MOSFETs.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4798, doi. 10.1007/s11664-025-11928-1

By:

Kumar, Alok;
Gupta, Tarun Kumar;
Shrivastava, Bhavana P.;
Gupta, Abhinav

Publication type:

Article

A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4786, doi. 10.1007/s11664-025-11892-w

By:

Chen, Weizhong;
Deng, Zhijie;
Chen, Zesheng;
Zhou, Yangqi;
Han, Zhengsheng;
Wang, Zeheng

Publication type:

Article

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3480, doi. 10.1007/s11664-024-11548-1

By:

Chowdhury, Dibyendu;
DasMahapatra, Suddhendu;
De, Bishnu Prasad;
Maiti, Madhusudan;
Kar, Rajib;
Mandal, Durbadal;
Samanta, Jagannath

Publication type:

Article

Spacer Engineered Halo-Doped Nanowire MOSFET for Digital Applications.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 758, doi. 10.1007/s11664-024-11557-0

By:

Kumar, P. Kiran;
Balaji, B.;
Vardhan, Ch. Sree;
Gowthami, Y.;
Agarwal, Vipul;
Shashidhar, M.;
Sagar, Kallepelli;
Jena, Biswajit;
Pedapudi, Michael Cholines;
Manikanta, Kurivella

Publication type:

Article

Proposal and Analysis of a High Read and Write Noise Margin 6T-SRAM Cell Using Novel Core Insulator Double-Gate (CIDG) MOSFETs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8087, doi. 10.1007/s11664-024-11490-2

By:

Jaiswal, Sushmita;
Gupta, Santosh Kumar

Publication type:

Article

Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4544, doi. 10.1007/s11664-024-11225-3

By:

Goyal, Priyanshi;
Kaur, Harsupreet

Publication type:

Article

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3887, doi. 10.1007/s11664-024-11100-1

By:

Venkatesan, R. S.;
Manickam, Rajeswari;
Duraipandi, Brindha;
Sugathan, Krishnapriya Kottakkal

Publication type:

Article

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2601, doi. 10.1007/s11664-024-11014-y

By:

Fletcher, A. S. Augustine;
Franklin, S. Angen;
Murugapandiyan, P.;
Ajayan, J.;
Nirmal, D.

Publication type:

Article

5,7,12,14‐Tetrafunctionalized 6,13‐Diazapentacenes.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 4, p. 799, doi. 10.1002/chem.201904516

By:

Xie, Gaozhan;
Hauschild, Miriam;
Hoffmann, Hendrik;
Ahrens, Lukas;
Rominger, Frank;
Borkowski, Michal;
Marszalek, Tomasz;
Freudenberg, Jan;
Kivala, Milan;
Bunz, Uwe H. F.

Publication type:

Article

Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4339, doi. 10.1007/s10854-019-00747-w

By:

Seixas, Luís Eduardo;
Gonçalez, Odair Lellis;
Vaz, Rafael Galhardo;
da Costa Telles, Antonio Carlos;
Finco, Saulo;
Gimenez, Salvador Pinillos

Publication type:

Article

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4

By:

Yang, Fan;
Yao, Yao;
He, Zhiyuan;
Zhou, Guilin;
Zheng, Yue;
He, Liang;
Zhang, Jincheng;
Ni, Yiqiang;
Zhou, Deqiu;
Shen, Zhen;
Zhong, Jian;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

Selective epitaxy growth of SiGe layers for MOSFETs and FinFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4584, doi. 10.1007/s10854-015-3123-z

By:

Radamson, Henry;
Kolahdouz, Mohammadreza

Publication type:

Article

Palladium diffusion in germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3787, doi. 10.1007/s10854-015-2903-9

By:

Chroneos, A.;
Vovk, R.

Publication type:

Article

Modeling indium diffusion in germanium by connecting point defect parameters with bulk properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2113, doi. 10.1007/s10854-014-2655-y

By:

Chroneos, A.;
Vovk, R.

Publication type:

Article

Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 248, doi. 10.1007/s10854-007-9531-y

By:

Abdi, M. A.;
Djeffal, F.;
Arar, D.;
Hafiane, M. L.

Publication type:

Article

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 161, doi. 10.1007/s10854-007-9301-x

By:

Hayama, K.;
Takakura, K.;
Ohyama, H.;
Rafí, J. M.;
Mercha, A.;
Simoen, E.;
Claeys, C.

Publication type:

Article

Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle.

Published in:

Continuum Mechanics & Thermodynamics, 2012, v. 24, n. 4-6, p. 417, doi. 10.1007/s00161-011-0217-6

By:

Camiola, Vito;
Mascali, Giovanni;
Romano, Vittorio

Publication type:

Article

Low Power Wideband Folded Cascade Based Transimpedance Amplifier Using Flipped Voltage Follower and Floating Gate MOSFET.

Published in:

Wireless Personal Communications, 2024, v. 137, n. 2, p. 893, doi. 10.1007/s11277-024-11403-w

By:

Singh, Preeti;
Gupta, Maneesha;
Aggarwal, Bhawna

Publication type:

Article