Works about EPITAXY

Results: 3224

Advances in Gallium Oxide: Properties, Applications, and Future Prospects.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400690

By:

Ganguly, Swapnodoot;
Nama Manjunatha, Krishna;
Paul, Shashi

Publication type:

Article

The Rise of Refractory Transition‐Metal Nitride Films for Advanced Electronics and Plasmonics.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 12, p. 1, doi. 10.1002/admi.202500116

By:

Bi, Jiachang;
Zhang, Ruyi;
Yao, Xiong;
Cao, Yanwei

Publication type:

Article

Thin Epitaxial Ionic Fluoride Films for Electronics Applications.

Published in:

Surfaces (2571-9637), 2025, v. 8, n. 2, p. 22, doi. 10.3390/surfaces8020022

By:

Giovanelli, Giulia;
Borghi, Mauro;
Lodi, Alessandro;
Grasser, Tibor;
Pasquali, Luca

Publication type:

Article

Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers.

Published in:

Micromachines, 2025, v. 16, n. 6, p. 710, doi. 10.3390/mi16060710

By:

Hsieh, Chi-Hsiang;
Cheng, Chiao-Yang;
Hsiao, Yi-Kai;
Wang, Zi-Hao;
Tu, Chang-Ching;
Chen, Chao-Chang Arthur;
Lee, Po-Tsung;
Kuo, Hao-Chung

Publication type:

Article

On Model for Prognosis of Mass Transport During Magnetron Sputtering.

Published in:

International Journal of Nanoscience, 2023, v. 22, n. 1, p. 1, doi. 10.1142/S0219581X22500545

By:

Pankratov, E. L.

Publication type:

Article

FORMATION OF SEMICONDUCTOR QUANTUM DOTS IN THE SUBCRITICAL THICKNESS RANGE.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 339, doi. 10.1142/S0219581X07004900

By:

ALEXANDER, TONKIKH;
DUBROVSKII, VLADIMIR;
MUSIKHIN, YURII;
USTINOV, VICTOR;
CIRLIN, GEORGE;
POLYAKOV, NIKOLAY;
SAMSONENKO, YURII;
WERNER, PETER

Publication type:

Article

ADATOM INCORPORATION AND STEP CROSSING AT THE EDGES OF 2D NANOISLANDS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 237, doi. 10.1142/S0219581X07004705

By:

FILIMONOV, S. N.;
YU. HERVIEU, YU.

Publication type:

Article

FABRICATION OF LSMO SINGLE LAYERS AND LSMO/YBCO DOUBLE LAYERS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 4/5, p. 511, doi. 10.1142/S0219581X06004711

By:

ZHU, HONG;
OKADA, MASANORI;
KAMIYA, ATSUSHI;
SARKAR, AJAY KRISHNO;
MATSUI, MASAHITO;
SEIKH, MD. MOTIN;
ENDO, TAMIO

Publication type:

Article

SELF-ASSEMBLED INDIUM-ARSENIDE ELONGATED NANOSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 2, p. 253, doi. 10.1142/S0219581X05003012

By:

Suraprapapich, S.;
Thainoi, S.;
Laliew, C.;
Kanjanachuchai, S.;
Panyakeow, S.

Publication type:

Article

MAGNETO-TRANSPORT IN NANOPATTERNED EPITAXIAL Ni FILMS.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 6, p. 729, doi. 10.1142/S0219581X04002589

By:

Lukaszew, R. A.;
Zhang, Z.;
Pearson, D.;
Zambano, A.

Publication type:

Article

SURFACE NANOPATTERNING EFFECTS, STRUCTURE AND MAGNETIC PROPERTIES OF EPITAXIAL Ni FILMS.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 6, p. 737, doi. 10.1142/S0219581X04002590

By:

Lukaszew, R. A.;
Zhang, Z.;
Pearson, D.;
Pan, X.;
Clarke, R.;
Yeadon, M.

Publication type:

Article

THERMAL CHARACTERIZATION OF GaAsN THIN FILMS BY PULSED PHOTOTHERMAL REFLECTANCE TECHNIQUE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 6, p. 781, doi. 10.1142/S0219581X0400267X

By:

Zhao, Yimin;
Chen, George;
Wang, Shanzhong;
Yoon, Soon Fatt

Publication type:

Article

KINETICS OF ATOMIC SURFACE TRANSFORMATION DURING STRANSKI–KRASTANOW GROWTH MODE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 9, doi. 10.1142/S0219581X04001456

By:

Brunev, D. V.;
Karpov, A. N.;
Neizvestny, I. G.;
Shwartz, N. L.;
Yanovitskaya, Z. Sh.

Publication type:

Article

MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 19, doi. 10.1142/S0219581X04001778

By:

Dvurechenskii, A. V.;
Smagina, J. V.;
Zinovyev, V. A.;
Teys, S. A.;
Gutakovskii, A. K.;
Groetzschel, R.

Publication type:

Article

MAGNETIC EPITAXIAL NANOSTRUCTURES FROM IRON AND NICKEL.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 51, doi. 10.1142/S0219581X04001808

By:

Malikov, I. V.;
Fomin, L. A.;
Vinnichenko, V. Yu.;
Mikhailov, G. M.

Publication type:

Article

E-BEAM PUMPED VCSEL ON MOVPE-GROWN HEXAGONAL CdSSe/CdS MQW STRUCTURE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 213, doi. 10.1142/S0219581X04002000

By:

Kozlovsky, V. I.;
Bondarev, V. Yu.;
Sannikov, D. A.;
Kuznetsov, P. I.;
Yakushcheva, G. G.;
O'Donnell, K. P.;
Trager-Cowan, C.

Publication type:

Article

Epitaxial Growth of Urchin-Like CoSe2 Nanorods from Electrospun Co-Embedded Porous Carbon Nanofibers and Their Superior Lithium Storage Properties.

Published in:

Particle & Particle Systems Characterization, 2017, v. 34, n. 10, p. n/a, doi. 10.1002/ppsc.201700185

By:

Wang, Jinkai;
Wang, Hongkang;
Cao, Daxian;
Lu, Xuan;
Han, Xiaogang;
Niu, Chunming

Publication type:

Article

Single Crystalline Metal Films as Substrates for Graphene Growth.

Published in:

Annalen der Physik, 2017, v. 529, n. 11, p. n/a, doi. 10.1002/andp.201700023

By:

Zeller, Patrick;
Weinl, Michael;
Speck, Florian;
Ostler, Markus;
Henß, Ann‐Kathrin;
Seyller, Thomas;
Schreck, Matthias;
Wintterlin, Joost

Publication type:

Article

Sub-Monolayer Growth of Titanium, Cobalt, and Palladium on Epitaxial Graphene.

Published in:

Annalen der Physik, 2017, v. 529, n. 11, p. n/a, doi. 10.1002/andp.201700031

By:

Sokolova, Anastasia;
Kilchert, Franziska;
Link, Stefan;
Stöhr, Alexander;
Starke, Ulrich;
Schneider, M. Alexander

Publication type:

Article

Charge-Carrier Transport in Large-Area Epitaxial Graphene.

Published in:

Annalen der Physik, 2017, v. 529, n. 11, p. n/a, doi. 10.1002/andp.201700048

By:

Kisslinger, Ferdinand;
Popp, Matthias;
Jobst, Johannes;
Shallcross, Sam;
Weber, Heiko B.

Publication type:

Article

Epitaxy of Layered Orthorhombic SnS-SnS xSe(1−x) Core-Shell Heterostructures with Anisotropic Photoresponse.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 26, p. 4673, doi. 10.1002/adfm.201600699

By:

Xia, Jing;
Zhu, Dandan;
Li, Xuanze;
Wang, Lei;
Tian, Lifeng;
Li, Jing;
Wang, Jingyuan;
Huang, Xing;
Meng, Xiang‐Min

Publication type:

Article

Etching-Free Epitaxial Growth of Gold on Silver Nanostructures for High Chemical Stability and Plasmonic Activity.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 34, p. 5435, doi. 10.1002/adfm.201502366

By:

Liu, Hongpo;
Liu, Tingzhuo;
Zhang, Lei;
Han, Lu;
Gao, Chuanbo;
Yin, Yadong

Publication type:

Article

Core/Shell Nanostructures: Etching-Free Epitaxial Growth of Gold on Silver Nanostructures for High Chemical Stability and Plasmonic Activity (Adv. Funct. Mater. 34/2015).

Published in:

Advanced Functional Materials, 2015, v. 25, n. 34, p. 5568, doi. 10.1002/adfm.201502366

By:

Liu, Hongpo;
Liu, Tingzhuo;
Zhang, Lei;
Han, Lu;
Gao, Chuanbo;
Yin, Yadong

Publication type:

Article

Epitaxy on Demand.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 32, p. 5140, doi. 10.1002/adfm.201501483

By:

Nijland, Maarten;
Thomas, Sean;
Smithers, Mark A.;
Banerjee, Nirupam;
Blank, Dave H. A.;
Rijnders, Guus;
Xia, Jing;
Koster, Gertjan;
ten Elshof, Johan E.

Publication type:

Article

Soft Graphoepitaxy for Large Area Directed Self-Assembly of Polystyrene- block-Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 22, p. 3425, doi. 10.1002/adfm.201500100

By:

Borah, Dipu;
Rasappa, Sozaraj;
Salaun, Mathieu;
Zellsman, Marc;
Lorret, Olivier;
Liontos, George;
Ntetsikas, Konstantinos;
Avgeropoulos, Apostolos;
Morris, Michael A.

Publication type:

Article

Epitaxial Growth of PbSe Quantum Dots on MoS2 Nanosheets and their Near-Infrared Photoresponse.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 37, p. 5798, doi. 10.1002/adfm.201400330

By:

Schornbaum, Julia;
Winter, Benjamin;
Schießl, Stefan P.;
Gannott, Florentina;
Katsukis, Georgios;
Guldi, Dirk M.;
Spiecker, Erdmann;
Zaumseil, Jana

Publication type:

Article

Water-Induced Phase Separation Forming Macrostructured Epitaxial Quartz Films on Silicon.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 35, p. 5494, doi. 10.1002/adfm.201401066

By:

Drisko, Glenna L.;
Carretero‐Genevrier, Adrian;
Gich, Martí;
Gàzquez, Jaume;
Ferrah, Djawhar;
Grosso, David;
Boissière, Cédric;
Rodriguez‐Carvajal, Juan;
Sanchez, Clément

Publication type:

Article

Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 28, p. 4492, doi. 10.1002/adfm.201304062

By:

Bayram, Can;
Ott, John A.;
Shiu, Kuen‐Ting;
Cheng, Cheng‐Wei;
Zhu, Yu;
Kim, Jeehwan;
Razeghi, Manijeh;
Sadana, Devendra K.

Publication type:

Article

Self-Assembly of Multiple Stacked Nanorings by Vertically Correlated Droplet Epitaxy.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 4, p. 530, doi. 10.1002/adfm.201302032

By:

Wu, Jiang;
Hirono, Yusuke;
Li, Xinlei;
Wang, Zhiming M.;
Lee, Jihoon;
Benamara, Mourad;
Luo, Siyuan;
Mazur, Yuriy I.;
Kim, Eun Soo;
Salamo, Gregory J.

Publication type:

Article

Growth and fabrication issues of GaSb-based detectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1039, doi. 10.1007/s10854-009-9927-y

By:

Mohammedy, Farseem M.;
Deen, M. Jamal

Publication type:

Article

Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 363, doi. 10.1007/s10854-008-9625-1

By:

Pačebutas, V.;
Bertulis, K.;
Aleksejenko, G.;
Krotkus, A.

Publication type:

Article

Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 264, doi. 10.1007/s10854-008-9571-y

By:

Saito, Katsuhiko;
Yamaguchi, Kouji;
Tanaka, Tooru;
Nishio, Mitsuhiro;
Guo, Qixin;
Ogawa, Hiroshi

Publication type:

Article

SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 176, doi. 10.1007/s10854-007-9515-y

By:

Kirste, Lutz;
Köhler, Klaus;
Maier, Manfred;
Kunzer, Michael;
Maier, Markus;
Wagner, Joachim

Publication type:

Article

Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 51, doi. 10.1007/s10854-007-9557-1

By:

Irmer, G.;
Brumme, T.;
Herms, M.;
Wernicke, T.;
Kneissl, M.;
Weyers, M.

Publication type:

Article

Cathodoluminescence study of GaN-based film structures.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 58, doi. 10.1007/s10854-007-9559-z

By:

Jiang, D. S.;
Jahn, U.;
Chen, J.;
Li, D.;
Zhang, S. M.;
Zhu, J. J.;
Zhao, D. G.;
Liu, Z. S.;
Yang, H.;
Ploog, K.

Publication type:

Article

In situ X-ray diffraction study of epitaxial growth of ordered Fe3Si films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 199, doi. 10.1007/s10854-007-9530-z

By:

Jenichen, B.;
Kaganer, V. M.;
Braun, W.;
Shayduk, R.;
Tinkham, B.;
Herfort, J.

Publication type:

Article

Cathodoluminescent investigations of In x Ga1− x N layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 319, doi. 10.1007/s10854-008-9609-1

By:

Domracheva, Yana V.;
Jmerik, Valentin N.;
Popova, Tatiana B.;
Zamoryanskaya, Maria V.

Publication type:

Article

Defects in nanostructures with ripened InAs/GaAs quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 96, doi. 10.1007/s10854-008-9657-6

By:

Nasi, L.;
Bocchi, C.;
Germini, F.;
Prezioso, M.;
Gombia, E.;
Mosca, R.;
Frigeri, P.;
Trevisi, G.;
Seravalli, L.;
Franchi, S.

Publication type:

Article

Molecular beam epitaxy of semipolar AlN( $$11\bar{2}2$$ ) and GaN( $$11\bar{2}2$$ ) on m-sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 805, doi. 10.1007/s10854-007-9453-8

By:

Lahourcade, Lise;
Bellet-Amalric, Edith;
Monroy, Eva;
Chauvat, Marie Pierre;
Ruterana, Pierre

Publication type:

Article

Structure and dielectric characteristics of epitaxially strained BaTiO3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 466, doi. 10.1007/s10854-007-9364-8

By:

Jin-Long Tang;
Jun Zhu;
Wen-Feng Qin;
Jie Xiong;
Yan-Rong Li

Publication type:

Article

Electronic characterization of several 100 μm thick epitaxial GaAs layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 487, doi. 10.1007/s10854-007-9367-5

By:

Talbi, N.;
Khirouni, K.;
Sun, G. C.;
Samic, H.;
Bourgoin, J. C.

Publication type:

Article

Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 311, doi. 10.1007/s10854-007-9335-0

By:

Kakemoto, Hirofumi;
Higuchi, Tohru;
Shibata, Hajime;
Wada, Satoshi;
Tsurumi, Takaaki

Publication type:

Article

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 137, doi. 10.1007/s10854-007-9306-5

By:

Reentilä, O.;
Lankinen, A.;
Mattila, M.;
Säynätjoki, A.;
Tuomi, T. O.;
Lipsanen, H.;
O'Reilly, L.;
McNally, P. J.

Publication type:

Article

Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 149, doi. 10.1007/s10854-007-9303-8

By:

Säynätjoki, A.;
Lankinen, A.;
Tuomi, T. O.;
McNally, P. J.;
Danilewsky, A.;
Zhilyaev, Y.;
Fedorov, L.

Publication type:

Article

Dislocations at the interface between sapphire and GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 143, doi. 10.1007/s10854-007-9307-4

By:

Lankinen, A.;
Lang, T.;
Suihkonen, S.;
Svensk, O.;
Säynätjoki, A.;
Tuomi, T. O.;
McNally, P. J.;
Odnoblyudov, M.;
Bougrov, V.;
Danilewsky, A. N.;
Bergman, P.;
Simon, R.

Publication type:

Article

SEM characterization of CdTe growth on CdTe(111) by close-spaced sublimation.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 11, p. 1085, doi. 10.1007/s10854-007-9211-y

By:

Quiñones, Stella;
Ammu, Skanda;
Escobedo, Arev;
Rodriguez, Mario;
Cruz-Campa, Jose;
McClure, John;
Zubia, David

Publication type:

Article

High boron incorporation in selective epitaxial growth of SiGe layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 747, doi. 10.1007/s10854-007-9121-z

By:

Ghandi, R.;
Kolahdouz, M.;
Hållstedt, J.;
Lu, Jun;
Wise, R.;
Wejtmans, H.;
Östling, M.;
Radamson, H.

Publication type:

Article

X-ray diffraction study of langasite film grown by liquid phase epitaxy.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 22, p. 1621, doi. 10.1023/A:1026301011788

By:

Zhang, Hong;
Singh, N. B.;
Adam, J. D.;
Berghmans, A.;
Tidrow, S.;
Fazi, C.

Publication type:

Article

Plasma cleaning of carbon species for silicon homoepitaxial growth.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 15, p. 1067, doi. 10.1023/A:1024974521991

By:

Kim, H. W.;
Hwang, W. S.;
Lee, C.;
Reif, R.

Publication type:

Article

Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 13, p. 939, doi. 10.1023/A:1024623804920

By:

Kim, H. W.;
Hwang, W. S.;
Lee, C.;
Reif, R.

Publication type:

Article