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Use of Electron Beam-Induced Current Technique to Characterize Transport Properties of Narrow-Gap-Energy Materials for IR Detection.
- Published in:
- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5850, doi. 10.1007/s11664-024-11307-2
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- Article
Development and commissioning of a broadband online X‐ray spectrometer for the SXFEL Facility.
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- Journal of Synchrotron Radiation, 2024, v. 31, n. 5, p. 1373, doi. 10.1107/S1600577524005812
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- Article
Production of Positrons by Cosmic Rays.
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- JETP Letters, 2024, v. 120, n. 2, p. 79, doi. 10.1134/S0021364024601970
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- Article
Quantum Transport in Fractal Lattices with Coulomb Interaction.
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- Semiconductors, 2024, v. 58, n. 2, p. 141, doi. 10.1134/S1063782624020088
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- Article
Molecular Engineering of Methylated Sulfone‐Based Covalent Organic Frameworks for Back‐Reaction Inhibited Photocatalytic Overall Water Splitting.
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- Angewandte Chemie, 2024, v. 136, n. 37, p. 1, doi. 10.1002/ange.202408697
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- Article
Correction: Bagchi et al. Effects of Carboxyl Functionalized CNT on Electrochemical Behaviour of Polyluminol-CNT Composites. Chemistry 2022, 4 , 1561–1575.
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- 2024
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- Correction Notice
Relativistic Backward-Wave Oscillator with Longitudinal-Slotted Diffraction Output.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 190, doi. 10.1134/S1063785023180062
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- Article
Influence of Irradiation with Accelerated Electrons on the Physical Properties of Polyethylene Terephthalate.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 157, doi. 10.1134/S1063785023170200
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- Article
Magnon Confinement on the Two-Dimensional Penrose Lattice: Perpendicular-Space Analysis of the Dynamic Structure Factor.
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- Crystals (2073-4352), 2024, v. 14, n. 8, p. 702, doi. 10.3390/cryst14080702
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- Article
Strong Field‐Aligned Current and Its Driven Energy Conversion at Anti‐Dipolarization Front.
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- Geophysical Research Letters, 2024, v. 51, n. 16, p. 1, doi. 10.1029/2024GL110017
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- Article
Adhesion‐controlled anisotropic rotational molding of multilayered ultrasoft silicone films.
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- Polymer Engineering & Science, 2024, v. 64, n. 9, p. 4566, doi. 10.1002/pen.26869
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- Article
Innovative Programming Approaches to Address Z-Interference in High-Density 3D NAND Flash Memory.
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- Electronics (2079-9292), 2024, v. 13, n. 16, p. 3123, doi. 10.3390/electronics13163123
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- Article
Free electrons spin-dependent Kapitza–Dirac effect in two-dimensional triangular optical lattice.
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- Nanophotonics (21928606), 2024, v. 13, n. 20, p. 3825, doi. 10.1515/nanoph-2024-0191
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- Article
Effect of Orbital Symmetry on Time–Energy Distributions of F − Ions in the Attoclock Scheme.
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- Symmetry (20738994), 2024, v. 16, n. 8, p. 1019, doi. 10.3390/sym16081019
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- Article
The free path and generation rate of fast-moving electron interacting with dielectric media.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 1, p. 010, doi. 10.15407/spqeo25.01.010
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- Article
Nanostructured SiC as a promising material for the cold electron emitters.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 355, doi. 10.15407/spqeo24.04.355
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- Article
Electrophysical characteristics of GaAs<sub>1–х</sub>P<sub>х</sub> LEDs irradiated by 2 МeV electrons.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 201, doi. 10.15407/spqeo23.02.201
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- Article
2D semiconductor structures as a basis for new high-tech devices (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 380, doi. 10.15407/spqeo21.04.380
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- Article
Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 325, doi. 10.15407/spqeo21.04.325
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- Article
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 249, doi. 10.15407/spqeo21.03.249
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- Article
Self-organization in irradiated semiconductor crystals caused by thermal annealing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 130, doi. 10.15407/spqeo21.02.130
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- Article
Suitable factorization of the total intersubband scattering rates for efficient calculation of the current densities and gain characteristics in quantum cascade lasers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 180, doi. 10.15407/spqeo21.02.180
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- Article
Professor Solomon Isaakovich Pekar.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 102
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- Article
On determination of Cd<sub>1-x</sub>Zn<sub>x</sub>Te composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 305, doi. 10.15407/spqeo20.03.305
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- Article
Analysis of a quantum well structure optical integrated device.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 204, doi. 10.15407/spqeo20.02.204
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- Article
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250
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- Article
Impact of traps on current-voltage characteristic of n<sup>+</sup>-n-n<sup>+</sup> diode.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 210, doi. 10.15407/spqeo20.02.210
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- Article
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 52, doi. 10.15407/spqeo19.01.052
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- Article
Optical properties of graphene film growing on a thin copper layer.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 57, doi. 10.15407/spqeo19.01.057
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- Article
Electron transport through nanocomposite SiO<sub>2</sub>(Si) films containing Si nanocrystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 9, doi. 10.15407/spqeo19.01.009
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- Article
Acoustic-stimulated relaxation of GaAs<sub>1-x</sub>P<sub>x</sub> LEDs electroluminescence intensity.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 34, doi. 10.15407/spqeo19.01.034
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- Article
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 75, doi. 10.15407/spqeo19.01.075
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- Article
Thermal annealing and evolution of defects in neutron-irradiated cubic SiC.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 403, doi. 10.15407/spqeo18.04.403
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- Article
Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 286, doi. 10.15407/spqeo18.03.286
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- Article
Influence of dimensional static and dynamic charges on conduction in the active zone of a quantum cascade laser.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 2, p. 123, doi. 10.15407/spqeo18.02.123
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- Article
Spectral parameters of electron in multi-shell open semiconductor nanotube.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 57
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- Article
Electronic structure of PbSnS<sub>3</sub> and PbGeS<sub>3</sub> semiconductor compounds with the mixed cation coordination.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 12
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- Article
Investigation of the influence of isovalent impurity of silicon and γ-irradiation (<sup>60</sup>Co) on electrophysical parameters of n-Ge (Sb).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 25
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- Article
Effect of magnetic and electric fields on optical properties of semiconductor spherical layer.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 7
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- Article
Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB<sub>2</sub>-TiC ceramic composites.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 382
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- Article
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 213
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- Article
Electro-optic effect in GaN/Al<sub>0.15</sub>Ga<sub>0.85</sub>N single quantum wells for optical switch.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 3, p. 321, doi. 10.15407/spqeo13.03.321
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- Article
Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 3, p. 273, doi. 10.15407/spqeo13.03.273
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- Article
Electron-hole Fermi liquid in nanosized semiconductor structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 1, p. 51
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- Article
Radiative recombination in initial and electron-irradiated GaP crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 1, p. 30
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- Article
Untitled.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 429
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- Article
Erratum.
- Published in:
- 2009
- Publication type:
- Erratum
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC<sub>60</sub>) film heterostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 236, doi. 10.15407/spqeo11.03.236
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- Article
Electron, hole, and exciton spectra in a quantum wire crossing the quantum well.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 51, doi. 10.15407/spqeo10.03.051
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- Article
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 34, doi. 10.15407/spqeo10.02.034
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- Article