Works about CAPACITANCE-voltage characteristics

Results: 226

A Study on Theoretical Performance of Graphene FET using Analytical Approach with Reference to High Cutoff Frequency.

Published in:

International Journal of Nanoscience, 2016, v. 15, n. 3, p. 1, doi. 10.1142/S0219581X16400019

By:

Fahim-Al-Fattah, Md.;
Rahman, Md. Tawabur;
Islam, Md. Sherajul;
Bhuiyan, Ashraful G.

Publication type:

Article

What we talk about when we talk about capacitance measured with the voltage-clamp step method.

Published in:

Journal of Computational Neuroscience, 2012, v. 32, n. 1, p. 167, doi. 10.1007/s10827-011-0346-8

By:

Taylor, Adam

Publication type:

Article

Impact of pulsed electric field on cell disintegration and mass transfer in sugar beet.

Published in:

Food & Bioproducts Processing: Transactions of the Institution of Chemical Engineers Part C, 2012, v. 90, n. 3, p. 377, doi. 10.1016/j.fbp.2011.12.007

By:

Maskooki, Abdolmajid;
Eshtiaghi, Mohammad Naghi

Publication type:

Article

Automated system for measuring electrophysical parameters of semiconductor structures.

Published in:

Measurement Techniques, 2023, v. 66, n. 7, p. 508, doi. 10.1007/s11018-023-02252-3

By:

Pecherskaya, E. A.;
Karpanin, O. V.;
Tuzova, D. E.;
Nelyutskov, M. A.;
Antipenko, V. V.

Publication type:

Article

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 6, p. 1473, doi. 10.3390/electronics12061473

By:

Ji, Qizheng;
Liu, Jun;
Yang, Ming;
Hu, Xiaofeng;
Wang, Guangfu;
Qiu, Menglin;
Liu, Shanghe

Publication type:

Article

Design of a Schottky Metal-Brim Structure to Optimize 180–220 GHz Broadband Frequency Doubler MMIC.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 5, p. 715, doi. 10.3390/electronics9050715

By:

Qi, Luwei;
Meng, Jin;
Liu, Xiaoyu;
Yang, Chengyue;
Zhou, Jingtao;
Zhang, Dehai;
Jin, Zhi

Publication type:

Article

Effect of Introduction Layers of Native Oxide, InN, and InSb on the Electrical Characterization of the Au/n-InP.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 2, p. 1, doi. 10.21272/jnep.16(2).02001

By:

Sadoun, Ali

Publication type:

Article

Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 2, p. 02029-1

By:

Benhaliliba, Mostefa

Publication type:

Article

AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 2, p. 02001-1

By:

Benhaliliba, M.;
Ocak, Y. S.;
Mokhtari, H.;
Kiliçoglu, T.

Publication type:

Article

Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 2, p. 02015-1

By:

Parihar, Usha;
Padha, N.;
Panchal, C. J.

Publication type:

Article

Electrical Characterization of TiO2 Insulator Based Pd / TiO2 / Si MIS Structure Deposited by Sol-Gel Process.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 1, p. 01021-1

By:

Shubham, Kumar;
Khan, R. U.

Publication type:

Article

Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 13, p. 1, doi. 10.1002/pssa.202200194

By:

Li, Ang;
Wang, Chong;
Zheng, Xuefeng;
Ma, Xiaohua;
He, Yunlong;
Liu, Kai;
Zhao, Yaopeng;
Hao, Yue

Publication type:

Article

Electrical and material properties of hydrothermally grown single crystal (111) UO2.

Published in:

European Physical Journal B: Condensed Matter, 2018, v. 91, n. 4, p. 1, doi. 10.1140/epjb/e2018-80489-x

By:

Dugan, Christina L.;
Peterson, George Glenn;
Mock, Alyssa;
Young, Christopher;
Mann, J. Matthew;
Nastasi, Michael;
Schubert, Mathias;
Wang, Lu;
Mei, Wai-Ning;
Tanabe, Iori;
Dowben, Peter A.;
Petrosky, James

Publication type:

Article

Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots.

Published in:

Journal of Nanotechnology, 2013, p. 1, doi. 10.1155/2013/302647

By:

Nowozin, T.;
Wiengarten, A.;
Bonato, L.;
Bimberg, D.;
Lin, Wei-Hsun;
Shih-Yen Lin;
Ajour, M. N.;
Daqrouq, K.;
Balamesh, A. S.

Publication type:

Article

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 10, p. N.PAG, doi. 10.1142/S0217984920500955

By:

Aldemir, Durmuş Ali

Publication type:

Article

Dielectric Permittivity, AC Conductivity and Electric Modulus Properties of Metal/Ferroelectric/Semiconductor (MFS) Structures.

Published in:

Gazi University Journal of Science, 2013, v. 26, n. 3, p. 501

By:

TATAROĞLU, Adem

Publication type:

Article

p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2591, doi. 10.1007/s11664-024-11004-0

By:

Algarni, Sabah E.;
Qasrawi, A. F.;
Khusayfan, Najla M.;
Alharbi, Seham R.;
Alfhaid, Latifah Hamad Khalid

Publication type:

Article

Design and Characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2510, doi. 10.1007/s11664-022-09514-w

By:

Qasrawi, A. F.;
Daragme, Rana B.

Publication type:

Article

Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 4, p. 1731, doi. 10.1007/s11664-022-09431-y

By:

Akazawa, Masamichi;
Murai, Shunta;
Kachi, Tetsu

Publication type:

Article

Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2956, doi. 10.1007/s11664-020-08716-4

By:

Gonzalez-Serrano, Karla Adriana;
Seabaugh, Alan C.

Publication type:

Article

The parameters evaluation and optimization of polycrystalline diamond micro-electrodischarge machining assisted by electrode tool vibration.

Published in:

International Journal of Advanced Manufacturing Technology, 2012, v. 60, n. 9-12, p. 985, doi. 10.1007/s00170-011-3674-y

By:

Mahardika, Muslim;
Prihandana, Gunawan;
Endo, Takashi;
Tsujimoto, Takayuki;
Matsumoto, Nozomu;
Arifvianto, Budi;
Mitsui, Kimiyuki

Publication type:

Article

On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts.

Published in:

Turkish Journal of Physics, 2020, v. 44, n. 4, p. 302, doi. 10.3906/fiz-2007-11

By:

TÜRÜT, Abdulmecit

Publication type:

Article

Effect on the Electrical Characterizations of Temperature and Frequency Depending on Series Resistance and Interface States in MS Structure.

Published in:

Journal of Polytechnic, 2017, v. 20, n. 2, p. 313, doi. 10.2339/2017.20.2.313-318

By:

KINACI, Barış

Publication type:

Article

High sensitive NH3 sensor based on electrochemically etched porous silicon.

Published in:

Cogent Engineering, 2020, v. 7, n. 1, p. 1, doi. 10.1080/23311916.2020.1810880

By:

Khaniyev, B.A.;
Sagidolda, Y.;
Dikhanbayev, K.K.;
Tileu, A.O.;
Ibraimov, M.K.;
Rashad, Mohamed M.

Publication type:

Article

Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching.

Published in:

Technical Physics Letters, 2022, v. 48, n. 2, p. 23, doi. 10.1134/S106378502202002X

By:

Baranov, A. I.;
Kudryashov, D. A.;
Uvarov, A. V.;
Morozov, I. A.;
Shugurov, K. Yu.;
Maksimova, A. A.;
Vyacheslavova, E. A.;
Gudovskikh, A. S.

Publication type:

Article

Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes.

Published in:

Technical Physics Letters, 2020, v. 46, n. 3, p. 287, doi. 10.1134/S1063785020030244

By:

Kozlovski, V. V.;
Korol'kov, O.;
Davidovskaya, K. S.;
Lebedev, A. A.;
Levinshtein, M. E.;
Slepchuk, N.;
Strel'chuk, A. M.;
Toompuu, J.

Publication type:

Article

Heterobarrier Varactors with Nonuniformly Doped Modulation Layers.

Published in:

Technical Physics Letters, 2019, v. 45, n. 10, p. 1063, doi. 10.1134/S1063785019100250

By:

Maleev, N. A.;
Bobrov, M. A.;
Kuzmenkov, A. G.;
Vasil'ev, A. P.;
Kulagina, M. M.;
Guseva, Yu. A.;
Blokhin, S. A.;
Ustinov, V. M.

Publication type:

Article

Temperature-Dependent Optical Absorption and DLTS Study of As-Grown and Electron-Irradiated GaSe Crystals.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 4, p. 372, doi. 10.3390/cryst15040372

By:

Redkin, Ruslan A.;
Onishchenko, Nikolay I.;
Kosobutsky, Alexey V.;
Brudnyi, Valentin N.;
Su, Xinyang;
Sarkisov, Sergey Yu.

Publication type:

Article

On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 1, p. 34, doi. 10.3390/cryst10010034

By:

Chen, Chun-An;
Hsu, Yu-Ting;
Lan, Wen-How;
Huang, Kai-Feng;
Chang, Kuo-Jen;
Wang, Mu-Chun;
Huang, Chien-Jung

Publication type:

Article

Memory Properties of Zr-Doped ZrO 2 MOS-like Capacitor.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/coatings12091369

By:

Palade, Catalin;
Slav, Adrian;
Stavarache, Ionel;
Maraloiu, Valentin Adrian;
Negrila, Catalin;
Ciurea, Magdalena Lidia

Publication type:

Article

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 9, p. 1135, doi. 10.3390/coatings11091135

By:

Lee, Dong-Ho;
Kim, Dae-Hwan;
Jeong, Hwan-Seok;
Hwang, Seong-Hyun;
Lee, Sunhee;
Kim, Myeong-Ho;
Lim, Jun Hyung;
Kwon, Hyuck-In

Publication type:

Article

On the Role of Capacitance Determination Accuracy for the Electrical Characterization of Pulsed Driven Dielectric Barrier Discharges.

Published in:

Contributions to Plasma Physics, 2013, v. 53, n. 6, p. 469, doi. 10.1002/ctpp.201200126

By:

Pipa, A. V.;
Hoder, T.;
Brandenburg, R.

Publication type:

Article

Influence of Pulsed Fiber Laser Radiation on Surface Morphology and Electrical Properties of Si/SiO2 Structure.

Published in:

Journal of Laser Micro / Nanoengineering, 2015, v. 10, n. 3, p. 269, doi. 10.2961/jlmn.2015.03.0006

By:

Polyakov, Dmitry;
Skvortsov, Albert;
Veiko, Vadim

Publication type:

Article

Fully Integrated on-Chip Switched DC-DC Converter for Battery-Powered Mixed-Signal SoCs.

Published in:

Symmetry (20738994), 2017, v. 9, n. 1, p. 18, doi. 10.3390/sym9010018

By:

Heungjun Jeon;
Kyung Ki Kim;
Yong-Bin Kim

Publication type:

Article

DIELECTRIC AND INTERFACE STABILITY OF FILMS.

Published in:

Surface Review & Letters, 2012, v. 19, n. 6, p. -1, doi. 10.1142/S0218625X12500643

By:

SU, WEITAO;
ZHUANG, QIUHUI;
HUO, DEXUAN;
LI, BIN

Publication type:

Article

Analysis of Deep Level Centers in GaAs pin-Diode Structures.

Published in:

Electronics & Electrical Engineering, 2013, v. 19, n. 10, p. 95, doi. 10.5755/j01.eee.19.10.5903

By:

Korolkov, O.;
Toompuu, J.;
Rang, T.

Publication type:

Article

A Study for Examining Dissipation Factors of Various Insulations and Test Transformers in the Wide Range of Frequency.

Published in:

Electronics & Electrical Engineering, 2012, n. 121, p. 27

By:

Onal, E.

Publication type:

Article

Effect of Channel Engineering on Quasi-Static Capacitance-Voltage Characteristics of Double-Gate MOSFET.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 10, p. 5816, doi. 10.1007/s11664-020-08307-3

By:

Sanjay;
Prasad, B.;
Vohra, Anil

Publication type:

Article

Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-HgCdTe Grown by Molecular-Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 2, p. 881, doi. 10.1007/s11664-015-4239-x

By:

Voitsekhovskii, A.;
Nesmelov, S.;
Dzyadukh, S.

Publication type:

Article

Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II-VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3108, doi. 10.1007/s11664-015-3827-0

By:

Jain, F.;
Chan, P.-Y.;
Lingalugari, M.;
Kondo, J.;
Suarez, E.;
Gogna, P.;
Chandy, J.;
Heller, E.

Publication type:

Article

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2835, doi. 10.1007/s11664-015-3692-x

By:

Nejm, Razan;
Ayesh, Ahmad;
Zeze, Dagou;
Sleiman, Adam;
Mabrook, Mohammed;
Al-Ghaferi, Amal;
Hussein, Mousa

Publication type:

Article

Investigation of Properties of AsSe Thin Films for Direct Conversion.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2725, doi. 10.1007/s11664-015-3758-9

By:

Bharathan, P.

Publication type:

Article

Photoinduced p-Type Conductivity in n-Type ZnO.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 3, p. 1003, doi. 10.1007/s11664-014-3608-1

By:

Zhao, W.;
Sun, B.;
Shen, Z.;
Liu, Y.;
Chen, P.

Publication type:

Article

Interface States of FeO/Si Interfacial Structure and Effect of Magnetic Field.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 11, p. 4357, doi. 10.1007/s11664-014-3392-y

By:

Ghosh, Surajit;
Srivastava, P.

Publication type:

Article

Electrical Characteristics of Al/Poly(methyl methacrylate)/ p-Si Schottky Device.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3263, doi. 10.1007/s11664-014-3267-2

By:

Selçuk, A.B.;
Bilge Ocak, S.;
Aras, F.G.;
Oz Orhan, E.

Publication type:

Article

Investigation of Characteristics of AlO/ n-InGaAs ( x = 0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 8, p. 2439, doi. 10.1007/s11664-013-2616-x

By:

Trinh, Hai-Dang;
Lin, Yueh-Chin;
Kuo, Chien-I;
Chang, Edward;
Nguyen, Hong-Quan;
Wong, Yuen-Yee;
Yu, Chih-Chieh;
Chen, Chi-Ming;
Chang, Chia-Yuan;
Wu, Jyun-Yi;
Chiu, Han-Chin;
Yu, Terrence;
Chang, Hui-Cheng;
Tsai, Joseph;
Hwang, David

Publication type:

Article

Interface Electron Traps as a Source of Anomalous Capacitance in AlGaN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 6, p. 1184, doi. 10.1007/s11664-013-2553-8

By:

Osvald, J.

Publication type:

Article

Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 6, p. 1282, doi. 10.1007/s11664-013-2592-1

By:

Rajagopal Reddy, V.;
Umapathi, A.;
Sankar Naik, S.

Publication type:

Article

Effects of HO Pretreatment on the Capacitance-Voltage Characteristics of Atomic-Layer-Deposited AlO on Ga-Face GaN Metal-Oxide-Semiconductor Capacitors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 33, doi. 10.1007/s11664-012-2246-8

By:

Liu, Xiang;
Yeluri, Ramya;
Lu, Jing;
Mishra, Umesh

Publication type:

Article

Cobalt selenide thin film: photovoltaic and impedance spectral studies by simple chemical grown technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 22, p. 26588, doi. 10.1007/s10854-021-07035-6

By:

Gaur, Muddsar L.;
Bhuse, Vijaykumar M.;
Sanadi, Kallappa R.;
Rathod, Kishan C.;
Barache, Umesh B.;
Gaikwad, Shashikant H.

Publication type:

Article