Works about BIPOLAR transistors
Results: 538
Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.
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- Micromachines, 2025, v. 16, n. 2, p. 197, doi. 10.3390/mi16020197
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- Article
METAL-DIELECTRIC-SEMICONDUCTOR TRANSISTORS IN INTEGRAL CIRCUITS.
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- German International Journal of Modern Science / Deutsche Internationale Zeitschrift für Zeitgenössische Wissenschaft, 2025, n. 98, p. 67, doi. 10.5281/zenodo.14911007
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- Article
Ccd-controlled in situ interferometry for dry etch process monitoring.
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- Solid State Technology, 2001, v. 44, n. 6, p. 117
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- Article
A STUDY ON TRANSIT TIME FLUCTUATION, AND CORRELATION BETWEEN LOW FREQUENCY PHASE AND CURRENT OR AMPLITUDE NOISES IN A TRANSISTOR.
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- Fluctuation & Noise Letters, 2007, v. 7, n. 4, p. C69, doi. 10.1142/S0219477507004136
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- Article
Aging monitoring method for IGBT module based on conduction voltage drop in bridge‐arm short‐circuit.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 16, p. 2842, doi. 10.1049/pel2.12825
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- Publication type:
- Article
Multi‐port bidirectional isolated DC–DC resonance converter with constant phase current for application in bipolar DC microgrids.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 10, p. 1364, doi. 10.1049/pel2.12598
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- Article
A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 9, p. 1486, doi. 10.1049/pel2.12485
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- Article
Evaluation of the turn‐off transient controllability for high‐power IGBT modules.
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- IET Power Electronics (Wiley-Blackwell), 2022, v. 15, n. 7, p. 631, doi. 10.1049/pel2.12255
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- Article
Modelling and solving of IGBT's transient analysis model based on the finite state machine.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 1973, doi. 10.1049/pel2.12163
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- Article
Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 7, p. 1271, doi. 10.1049/pel2.12083
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- Article
Snapback-free and low-loss SAG-LIGBT with self-driving auxiliary gate.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 15, p. 3314, doi. 10.1049/iet-pel.2019.1491
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- Article
Review and analysis of SiC MOSFETs' ruggedness and reliability.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 445, doi. 10.1049/iet-pel.2019.0587
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- Publication type:
- Article
EMI mitigation in switching power converters combining closed-loop gate drive and chaotic frequency modulation technique.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 12, p. 1, doi. 10.1049/iet-pel.2018.6134
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- Article
DAB modulation schema with extended ZVS region for applications with wide input/output voltage.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 13, p. 1, doi. 10.1049/iet-pel.2018.5332
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- Publication type:
- Article
Nine-switch ac/ac current source converter for microgrid application with model predictive control.
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- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 13, p. 1759, doi. 10.1049/iet-pel.2017.0028
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- Article
Design and implementation of a novel three-phase cascaded half-bridge inverter.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 8, p. 1741, doi. 10.1049/iet-pel.2015.0951
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- Publication type:
- Article
Optimal design of new cascade multilevel converter topology based on series connection of extended sub-multilevel units.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 7, p. 1341, doi. 10.1049/iet-pel.2015.0658
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- Publication type:
- Article
Physics-based model of LPT CSTBT including MOS-side two-dimensional effects.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 5, p. 1019, doi. 10.1049/iet-pel.2015.0479
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- Publication type:
- Article
Smooth control of insulated gate bipolar transistors junction temperature in a small-scale wind power converter.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 3, p. 393, doi. 10.1049/iet-pel.2014.0962
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- Publication type:
- Article
Modified single-carrier multilevel sinusoidal pulse width modulation for asymmetrical insulated gate bipolar transistor-clamped grid-connected inverter.
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 8, p. 1531, doi. 10.1049/iet-pel.2014.0519
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- Publication type:
- Article
Control strategy applied on double flying capacitor multi-cell inverter for increasing number of generated voltage levels.
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 6, p. 887, doi. 10.1049/iet-pel.2014.0475
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- Publication type:
- Article
Split gate resurf stepped oxide UMOSFET with P-pillar for improved performance.
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- IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 4, p. 965, doi. 10.1049/iet-pel.2013.0363
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- Publication type:
- Article
New hybrid structure for multilevel inverter with fewer number of components for high-voltage levels.
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- IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 1, p. 96, doi. 10.1049/iet-pel.2013.0156
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- Publication type:
- Article
Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2019, v. 27, n. 5, p. 3923, doi. 10.3906/elk-1811-116
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- Article
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2006, v. 14, n. 3, p. 429
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- Article
State-Space Synthesis of Current-Mode First-Order Log-Domain Filters.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2006, v. 14, n. 3, p. 399
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- Article
面向Si / SiC混合器件逆变器全寿命周期安全工作区的 多开关模式主动切换策略.
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- Electric Power Automation Equipment / Dianli Zidonghua Shebei, 2023, v. 43, n. 10, p. 128, doi. 10.16081/j.epae.202309013
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- Article
DC Hard Faults Detection and Localization in Analog Circuits Using Fuzzy Logic Techniques.
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- Electronics / Elektronika (1450-5843), 2019, v. 23, n. 1, p. 18, doi. 10.7251/ELS1923018M
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- Article
An Interface‐Controlled Redox Switch for Wastewater Remediation.
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- ChemElectroChem, 2018, v. 5, n. 2, p. 362, doi. 10.1002/celc.201700942
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- Article
Chaotic States of Transistor-Based Tuned-Collector Oscillator.
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- Mathematics (2227-7390), 2023, v. 11, n. 9, p. 2213, doi. 10.3390/math11092213
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- Article
Chaotic and Hyperchaotic Dynamics of a Clapp Oscillator.
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- Mathematics (2227-7390), 2022, v. 10, n. 11, p. 1868, doi. 10.3390/math10111868
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- Article
Chaotic Oscillations in Cascoded and Darlington-Type Amplifier Having Generalized Transistors.
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- Mathematics (2227-7390), 2022, v. 10, n. 3, p. 532, doi. 10.3390/math10030532
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- Article
Structural and Parametric Optimization of Bandgap Voltage Reference.
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- Radioelectronics & Communications Systems, 2022, v. 65, n. 7, p. 365, doi. 10.3103/S0735272722070056
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- Article
Operational Calculation of Puncture Voltage of Drift n-p-n Transistors in Inverse Mode.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 6, p. 06021-1, doi. 10.21272/jnep.12(6).06021
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- Article
Pulse current regenerative resonant snubber-assisted two-switch flyback-type ZVS PWM DC-DC converter.
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- Electrical Engineering in Japan, 2005, v. 152, n. 3, p. 74, doi. 10.1002/eej.20081
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- Article
A low-loss snubber for reducing motor terminal surge voltage.
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- Electrical Engineering in Japan, 2005, v. 150, n. 4, p. 64, doi. 10.1002/eej.10378
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- Publication type:
- Article
Monolithic 3-terminal perovskite/silicon HBT-based tandem compatible with both-side contact silicon cells: a theoretical study.
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- EPJ Photovoltaics, 2023, v. 14, p. 1, doi. 10.1051/epjpv/2023024
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- Publication type:
- Article
Development of the Bipolar Junction Transistor Diagnostic Test (BJTDT) to explore the second-year undergraduate Myanmar electronic and Thai electrical engineering students' understanding of BJT working principles and applications.
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- Australasian Journal of Engineering Education, 2024, v. 29, n. 1, p. 66, doi. 10.1080/22054952.2024.2347792
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- Article
Editorial.
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- 2024
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- Publication type:
- Editorial
A Novel Schottky Collector Lateral Bipolar Junction Transistor on Silicon on Insulator.
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- Journal of Active & Passive Electronic Devices, 2014, v. 9, n. 4, p. 281
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- Article
600 V DISCRETE INSULATOR GATE BIPOLAR TRANSISTORS.
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- 2023
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- Publication type:
- Product Review
ISTFA 2019 HIGHLIGHTS.
- Published in:
- 2020
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- Publication type:
- Proceeding
Phase Noise Measurements and System Comparisons.
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- Microwave Journal, 2013, v. 56, n. 4, p. 22
- Publication type:
- Article
A NEW GENERATION OF HIGH FREQUENCY SIGE HBTs.
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- Microwave Journal, 2011, v. 54, n. 9, p. 122
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- Article
A HIGHLY MINIATURIZED ACTIVE 90° POWER COMBINER MMIC EMPLOYING CE AND CC CIRCUITS.
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- Microwave Journal, 2009, v. 52, n. 9, p. 134
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- Article
A CUSTOM III-V HETEROJUNCTION BIPOLAR TRANSISTOR MODEL.
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- Microwave Journal, 2009, v. 52, n. 4, p. 60
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- Article
The III-V vs. Silicon Battle.
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- Microwave Journal, 2009, v. 52, n. 4, p. 22
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- Article
RELATIONSHIPS BETWEEN COMMON EMITTER, COMMON BASE AND COMMON COLLECTOR HBTs.
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- Microwave Journal, 2009, v. 52, n. 2, p. 66
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- Publication type:
- Article
A HIGHLY INTEGRATED HBT DOWN-CONVERTER MMIC EMPLOYING: OPTIMALLY DESIGNED SPIRAL INDUCTOR FILTERS.
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- Microwave Journal, 2008, v. 51, n. 3, p. 128
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- Article
A 5 GHz RFIC SINGLE CHIP SOLUTION IN GAINP/GAAS HBT TECHNOLOGY.
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- Microwave Journal, 2008, v. 51, n. 2, p. 132
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- Publication type:
- Article