Works by Yugova, T.

Results: 19

Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method.

Published in:

Crystallography Reports, 2022, v. 67, n. 7, p. 1099, doi. 10.1134/S1063774522070495

By:

Yugova, T. G.;
Chuprakov, V. A.;
Sanzharovsky, N. A.;
Yugov, A. A.;
Martynov, I. D.;
Knyazev, S. N.

Publication type:

Article

Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method.

Published in:

Crystallography Reports, 2022, v. 67, n. 7, p. 1095, doi. 10.1134/S1063774522070483

By:

Sanjarovskii, N. A.;
Parfenteva, I. B.;
Yugova, T. G.;
Knyazev, S. N.

Publication type:

Article

Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method.

Published in:

Crystallography Reports, 2022, v. 67, n. 3, p. 323, doi. 10.1134/S1063774522030245

By:

Yugova, T. G.;
Knyazev, S. N.;
Pavlova, O. S.

Publication type:

Article

Polycrystallinity in Gallium Arsenide Crystals Grown by the Czochralski Method.

Published in:

Crystallography Reports, 2021, v. 66, n. 6, p. 931, doi. 10.1134/S1063774521060250

By:

Pavlova, O. S.;
Yugova, T. G.;
Knyazev, S. N.

Publication type:

Article

Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method.

Published in:

Crystallography Reports, 2020, v. 65, n. 6, p. 832, doi. 10.1134/S1063774520060413

By:

Yugov, A. A.;
Pugachev, B. V.;
Yugova, T. G.;
Knyazev, S. N.

Publication type:

Article

Magnetoplastic Effect in Te-Doped GaAs Single Crystals.

Published in:

Crystallography Reports, 2020, v. 65, n. 1, p. 7, doi. 10.1134/S1063774520010277

By:

Yugova, T. G.;
Belov, A. G.;
Knyazev, S. N.

Publication type:

Article

Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method.

Published in:

Crystallography Reports, 2017, v. 62, n. 2, p. 275, doi. 10.1134/S1063774517020201

By:

Parfenteva, I.;
Pugachev, B.;
Pavlov, V.;
Kozlova, Yu.;
Knyazev, C.;
Yugova, T.

Publication type:

Article

Raman spectroscopy study of the structure of gallium nitride epitaxial layers of different orientations.

Published in:

Crystallography Reports, 2016, v. 61, n. 3, p. 428, doi. 10.1134/S1063774516030299

By:

Yugov, A.;
Donskov, A.;
Yugova, T.;
Belogorohov, I.;
Parhomenko, Yu.

Publication type:

Article

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer.

Published in:

Crystallography Reports, 2015, v. 60, n. 6, p. 889, doi. 10.1134/S1063774515060036

By:

Belogorohov, I.;
Donskov, A.;
Knyazev, S.;
Kozlova, Yu.;
Pavlov, V.;
Yugova, T.

Publication type:

Article

Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy.

Published in:

Crystallography Reports, 2012, v. 57, n. 2, p. 277, doi. 10.1134/S1063774512020113

By:

Kravchuk, K.;
Mezhennyi, M.;
Yugova, T.

Publication type:

Article

Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy.

Published in:

Crystallography Reports, 2011, v. 56, n. 2, p. 274, doi. 10.1134/S1063774511020052

By:

Donskov, A.;
Dyakonov, L.;
Kozlova, Yu.;
Malakhov, S.;
Mezhennyi, M.;
Pavlov, V.;
Yugova, T.

Publication type:

Article

Thermally Stimulated Relaxation of Misfit Strains in Si<sub>1 – x</sub>Ge<sub>x</sub>/Si(100) Heterostructures with Different Buffer Layers.

Published in:

Crystallography Reports, 2005, v. 50, n. 6, p. 1020, doi. 10.1134/1.2132412

By:

Yugova, T. G.;
Mil'vidskiǐ, M. G.;
Rzaev, M. M.;
Schäffler, F.

Publication type:

Article

Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates.

Published in:

Crystallography Reports, 2005, v. 50, n. 5, p. 849, doi. 10.1134/1.2049407

By:

Vdovin, V. I.;
Mil'vidskiǐ, M. G.;
Yugova, T. G.

Publication type:

Article

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride.

Published in:

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 4, p. 380, doi. 10.1134/S1027451007040039

By:

Govorkov, A.;
Polyakov, A.;
Yugova, T.;
Smirnov, N.;
Petrova, E.;
Mezhennyi, M.;
Markov, A.;
Lee, I.;
Pearton, S.

Publication type:

Article

Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 555, doi. 10.1134/S1063782616040047

By:

Averichkin, P.;
Donskov, A.;
Dukhnovsky, M.;
Knyazev, S.;
Kozlova, Yu.;
Yugova, T.;
Belogorokhov, I.

Publication type:

Article

Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 411, doi. 10.1134/S1063782616030246

By:

Yugov, A.;
Malahov, S.;
Donskov, A.;
Duhnovskii, M.;
Knyazev, S.;
Kozlova, Yu.;
Yugova, T.;
Belogorokhov, I.

Publication type:

Article

Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge[sup +] Ions.

Published in:

Semiconductors, 2004, v. 38, n. 3, p. 313, doi. 10.1134/1.1682335

By:

Avrutin, V. S.;
Agafonov, Yu. A.;
Vyatkin, A. F.;
Zinenko, V. I.;
Izyumskaya, N. F.;
Irzhak, D. V.;
Roshchupkin, D. V.;
Steinman, É. A.;
Vdovin, V. I.;
Yugova, T. G.

Publication type:

Article

Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 610, doi. 10.1134/1.1187763

By:

Sobolev, N. A.;
Shek, E. I.;
Emel’yanov, A. M.;
Vdovin, V. I.;
Yugova, T. G.

Publication type:

Article

X-ray diffraction determination of the composition of InGaSb solid solution.

Published in:

Inorganic Materials, 2010, v. 46, n. 14, p. 1526, doi. 10.1134/S0020168510140098

By:

Parkhomenko, Yu.;
Shlenskii, A.;
Pavlov, V.;
Shepekina, G.;
Yugova, T.

Publication type:

Article