Works matching AU Strelchuk, V. V.

Results: 74

Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 692, doi. 10.1007/s10854-007-9381-7

By:

Strelchuk, V. V.;
Mazur, Yu. I.;
Wang, Zh. M.;
Schmidbauer, M.;
Kolomys, O. F.;
Valakh, M. Ya.;
Manasreh, M. O.;
Salamo, G. J.

Publication type:

Article

Modern Photoactive Nanocomposites Based on TiO2 and CeO2.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 4, p. 1, doi. 10.21272/jnep.15(4).04001

By:

Zahornyi, M. M.;
Lavrynenko, O. M.;
Kolomys, O. F.;
Strelchuk, V. V.;
Tyschenko, N. I.;
Korniіenko, O. A.;
Ievtushenko, A. I.

Publication type:

Article

Effect of Deuterium Ion Implantation Dose on Microstructure and Nanomechanical Properties of Silicon.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 1, p. 01001-1, doi. 10.21272/jnep.14(1).01001

By:

Kuprin, A. S.;
Dub, S. N.;
Nikolenko, A. S.;
Strelchuk, V. V.;
Morozov, O.;
Tolmachova, G. N.;
Pudov, A. O.

Publication type:

Article

Features of Stress State of Germanium Nanocrystals in SiOx Matrix.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 1, p. 01029-1

By:

Kuryliuk, V. V.;
Korotchenkov, O. A.;
Tsybrii, Z. F.;
Nikolenko, A. S.;
Strelchuk, V. V.

Publication type:

Article

Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands.

Published in:

Journal of Materials Science, 2011, v. 46, n. 17, p. 5737, doi. 10.1007/s10853-011-5528-2

By:

Kondratenko, S. V.;
Vakulenko, O. V.;
Kozyrev, Yu. N.;
Rubezhanska, M. Yu.;
Naumovets, A. G.;
Nikolenko, A. S.;
Lysenko, V. S.;
Strelchuk, V. V.;
Teichert, C.

Publication type:

Article

Formation and Luminescent Properties of AlO:SiOC Nanocomposites on the Base of Alumina Nanoparticles Modified by Phenyltrimethoxysilane.

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2245-z

By:

Kysil, D.;
Vasin, A.;
Sevostianov, S.;
Degoda, V.;
Strelchuk, V.;
Naseka, V.;
Piryatinski, Yu.;
Tertykh, V.;
Nazarov, A.;
Lysenko, V.

Publication type:

Article

Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1555, doi. 10.1007/s11664-007-0258-6

By:

Kladko, V. P.;
Strelchuk, V. V.;
Kolomys, A. F.;
Slobodian, M. V.;
Mazur, Yu. I.;
Wang, Zh. M.;
Kunets, Vas. P.;
Salamo, G. J.

Publication type:

Article

Optical-luminescence properties of ZnO and TiO2 nanopowders obtained by pulsed laser reactive ablation.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 10715, doi. 10.1007/s10854-022-08054-7

By:

Venhryn, Yu. I.;
Popovych, I. D.;
Serednytski, A. S.;
Kolomys, O. F.;
Luchechko, A. P.;
Strelchuk, V. V.

Publication type:

Article

On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6421, doi. 10.1007/s10854-022-07814-9

By:

Vasin, A. V.;
Rusavsky, A. V.;
Mamykin, S. V.;
Nikolenko, A. S.;
Strelchuk, V. V.;
Yatskiv, R.;
Grym, J.;
Gudimenko, A. I.;
Kladko, V. P.;
Tyagulskyy, I. P.;
Lorinčik, J.;
Elantyev, I.;
Nazarov, A. N.

Publication type:

Article

Optical characterization of the HgCdTe-based composite structure obtained by Ag ion implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15708, doi. 10.1007/s10854-018-9177-y

By:

Smirnov, A. B.;
Savkina, R. K.;
Nasieka, Iu. M.;
Strelchuk, V. V.;
Demchenko, I. N.;
Kryshtab, T.

Publication type:

Article

Nanomechanical and optical vibrations properties of vanadium oxide thin films obtained by multi-step deposition approach.

Published in:

Physics & Chemistry of Solid State, 2024, v. 25, n. 4, p. 871, doi. 10.15330/pcss.25.4.871-879

By:

Korchoviy, A. A.;
Lytvyn, P. M.;
Dzhagan, V. M.;
Gudymenko, O. Y.;
Svezhentsova, K. V.;
Boltovets, М. S.;
Strelchuk, V. V.;
Kolesnikov, O. M.;
Isaieva, O. F.;
Yefanov, V. S.;
Melnik, V. P.;
Romanyuk, B. M.

Publication type:

Article

PHOTOCATALYSIS AND OPTICAL PROPERTIES OF ZnO NANOSTRUCTURES GROWN BY MOCVD ON Si, Au/Si AND Ag/Si WAFERS.

Published in:

Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2023, v. 14, n. 1, p. 83, doi. 10.15407/hftp14.01.083

By:

Karpyna, V. A.;
Myroniuk, L. A.;
Myroniuk, D. V.;
Bugaiova, M. E.;
Petrosian, L. I.;
Bykov, O. I.;
Olifan, O. I.;
Strelchuk, V. V.;
Kolomys, O. F.;
Romanyuk, V. R.;
Naumenko, K. S.;
Artiukh, L. O.;
Povnitsa, O. Y.;
Zahorodnia, S. D.;
Ievtushenko, A. I.

Publication type:

Article

MECHANICAL EXFOLIATION OF GRAPHITE TO GRAPHENE IN POLYVINYLPYRROLIDONE AQUEOUS SOLUTION.

Published in:

Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2023, v. 14, n. 2, p. 230, doi. 10.15407/hftp14.02.230

By:

Myroniuk, L. A.;
Myroniuk, D. V.;
Maistruk, E. V.;
Kuryshchuk, S. I.;
Ievtushenko, A. I.;
Danylenko, I. M.;
Strelchuk, V. V.;
Koziarskyi, I. P.

Publication type:

Article

EXCITON-POLARITONS IN 2D MACROPOROUS SILICON STRUCTURES WITH NANO-COATINGS.

Published in:

Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2020, v. 11, n. 4, p. 445, doi. 10.15407/hftp11.04.445

By:

Karachevtseva, L. A.;
Lytvynenko, O. O.;
Onyshchenko, V. F.;
Strelchuk, V. V.;
Boyk, V. A.

Publication type:

Article

Structural and optical properties of ZnO films produced by a nonvacuum chemical technique.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1145, doi. 10.1134/S106378261409019X

By:

Strelchuk, V.;
Avramenko, K.;
Romaniuk, A.;
Zavyalova, L.;
Svechnikov, G.;
Khomchenko, V.;
Roshchina, N.;
Tkach, V.

Publication type:

Article

Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 621, doi. 10.1134/S1063782614050108

By:

Konakova, R.;
Kolomys, A.;
Okhrimenko, O.;
Strelchuk, V.;
Svetlichnyi, A.;
Grigoriev, M.;
Konoplev, B.

Publication type:

Article

Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6 H-SiC substrates.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 812, doi. 10.1134/S1063782613060134

By:

Konakova, R.;
Kolomys, O.;
Okhrimenko, O.;
Strelchuk, V.;
Volkov, E.;
Grigoriev, M.;
Svetlichnyi, A.;
Spiridonov, O.

Publication type:

Article

Transformation of a SiC/por-SiC/TiO structure during rapid thermal annealing.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1221, doi. 10.1134/S1063782612090114

By:

Konakova, R.;
Kolomys, O.;
Lytvyn, O.;
Okhrimenko, O.;
Strelchuk, V.;
Svetlichnyi, A.;
Linets, L.

Publication type:

Article

Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained SiGe buffer layers.

Published in:

Semiconductors, 2012, v. 46, n. 5, p. 647, doi. 10.1134/S1063782612050211

By:

Strelchuk, V.;
Nikolenko, A.;
Lytvyn, P.;
Kladko, V.;
Gudymenko, A.;
Valakh, M.;
Krasilnik, Z.;
Lobanov, D.;
Novikov, A.

Publication type:

Article

Effect of erbium fluoride doping on the photoluminescence of SiO films.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 323, doi. 10.1134/S1063782612030232

By:

Vlasenko, N.;
Sopinskii, N.;
Gule, E.;
Strelchuk, V.;
Oleksenko, P.;
Veligura, L.;
Nikolenko, A.;
Mukhlyo, M.

Publication type:

Article

The effect of Sn impurity on the optical and structural properties of thin silicon films.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1281, doi. 10.1134/S1063782611100253

By:

Voitovych, V.;
Neimash, V.;
Krasko, N.;
Kolosiuk, A.;
Povarchuk, V.;
Rudenko, R.;
Makara, V.;
Petrunya, R.;
Juhimchuk, V.;
Strelchuk, V.

Publication type:

Article

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure.

Published in:

Semiconductors, 2010, v. 44, n. 9, p. 1199, doi. 10.1134/S1063782610090174

By:

Strelchuk, V. V.;
Kladko, V. P.;
Avramenko, E. A.;
Kolomys, O. F.;
Safryuk, N. V.;
Konakova, R. V.;
Yavich, B. S.;
Valakh, M. Ya.;
Machulin, V. F.;
Belyaev, A. E.

Publication type:

Article

Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 127, doi. 10.1134/1.1852661

By:

Valakh, M. Ya.;
Strelchuk, V. V.;
Kolomys, A. F.;
Mazur, Yu. I.;
Wang, Z. M.;
Xiao, M.;
Salamo, G. J.

Publication type:

Article

Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures.

Published in:

Semiconductors, 2003, v. 37, n. 11, p. 1336, doi. 10.1134/1.1626220

By:

Valakh, M. Ya.;
Lisitsa, M. P.;
Strelchuk, V. V.;
Vuychik, M. V.;
Ivanov, S. V.;
Toropov, A. A.;
Shubina, T. V.;
Kop'ev, P. S.

Publication type:

Article

Low-Temperature Anti-Stokes Photoluminescence in CdSe/ZnSe Nanostructures.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 699, doi. 10.1134/1.1582538

By:

Valakh, M. Ya.;
Vuychik, N. V.;
Strelchuk, V. V.;
Sorokin, S. V.;
Shubina, T. V.;
Ivanov, S. V.;
Kop’ev, P. S.

Publication type:

Article

Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers.

Published in:

Journal of Applied Spectroscopy, 2011, v. 78, n. 4, p. 518, doi. 10.1007/s10812-011-9493-y

By:

Pavlovskii, V.;
Lutsenko, E.;
Yablonskii, G.;
Kolomys, A.;
Strelchuk, V.;
Avramenko, E.;
Valakh, M.

Publication type:

Article

Structure, Optical and Photocatalytic Properties of ZnO Nanostructures Grown on Ag-Coated Si Substrates.

Published in:

Acta Physica Polonica: A, 2022, v. 142, n. 5, p. 644, doi. 10.12693/APhysPolA.142.644

By:

KARPYNA, V.;
MYRONIUK, L.;
BYKOV, O.;
MYRONIUK, D.;
KOLOMYS, O.;
STRELCHUK, V.;
PETROSIAN, L.;
IEVTUSHENKO, A.

Publication type:

Article

Prospects for the creation of the technology of maskless photolithography based on direct laser recording.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2025, v. 28, n. 1, p. 93, doi. 10.15407/spqeo28.01.093

By:

Kryuchyn, А. А.;
Petrov, V. V.;
Kosyak, I. V.;
Shanoilo, S. M.;
Beliak, Ie. V.;
Kostyukevich, S. A.;
Lytvyn, P. M.;
Boltovets, М. S.;
Strelchuk, V. V.;
Svezhentsova, K. V.;
Kolesnikov, O. M.;
Korchovyi, A. A.;
Dzhagan, V. M.

Publication type:

Article

The effect of substrate bias voltage on the properties of Al-doped ZnO films deposited by magnetron sputtering.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 4, p. 418, doi. 10.15407/spqeo27.04.418

By:

Ievtushenko, A. I.;
Karpyna, V. A.;
Kolomys, O. F.;
Mamykin, S. V.;
Lytvyn, P. M.;
Bykov, O. I.;
Korchovyi, A. A.;
Starik, S. P.;
Bilorusets, V. V.;
Popenko, V. I.;
Strelchuk, V. V.;
Baturin, V. A.;
Karpenko, О. Y.

Publication type:

Article

Numerical estimations of the maximal distance of target detection in the IR spectrum with decreasing the target–background temperature contrast.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 4, p. 397, doi. 10.15407/spqeo27.04.397

By:

Melezhyk, Ye. O.;
Tsybrii, Z. F.;
Zabudsky, V. V.;
Kukhtaruk, N. I.;
Strelchuk, V. V.;
Nikolenko, A. S.;
Kolomys, O. F.;
Popenko, V. I.;
Maziar, D. M.;
Alieksandrov, M. A.;
Lytvyn, P. M.

Publication type:

Article

Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 3, p. 274, doi. 10.15407/spqeo27.03.274

By:

Okhrimenko, O. B.;
Bacherikov, Yu. Yu.;
Kolomys, O. F.;
Maziar, D. M.;
Strelchuk, V. V.;
Lytvyn, V. K.;
Konakova, R. V.

Publication type:

Article

The influence of substrate temperature on the structure and optical properties of NiO thin films deposited using the magnetron sputtering in the layer-by-layer growth regime.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 398, doi. 10.15407/spqeo26.04.398

By:

Ievtushenko, A. I.;
Karpyna, V. A.;
Bykov, O. I.;
Dranchuk, M. V.;
Kolomys, O. F.;
Maziar, D. M.;
Strelchuk, V. V.;
Starik, S. P.;
Baturin, V. A.;
Karpenko, О. Y.;
Lytvyn, O. S.

Publication type:

Article

Impact of grain-dependent boron uptake on the nano-electrical and local optical properties of polycrystalline boron doped CVD diamond.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 376, doi. 10.15407/spqeo26.04.376

By:

Nikolenko, A. S.;
Lytvyn, P. M.;
Strelchuk, V. V.;
Danylenko, I. M.;
Malyuta, S. V.;
Kudryk, Ya. Ya.;
Stubrov, Yu. Yu.;
Kovalenko, T. V.;
Ivakhnenko, S. O.

Publication type:

Article

Formation of ZnO films on SiC/porous Si/Si substrates.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 140, doi. 10.15407/spqeo26.02.140

By:

Kidalov, V. V.;
Dyadenchuk, A. F.;
Baturin, V. A.;
Karpenko, O. Yu.;
Kolomys, O. F.;
Ponomarenko, V. V.;
Maksimenko, Z. V.;
Strelchuk, V. V.;
Bacherikov, Yu. Yu.;
Okhrimenko, O. B.

Publication type:

Article

Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 355, doi. 10.15407/spqeo25.04.355

By:

Okhrimenko, O. B.;
Bacherikov, Yu. Yu.;
Kolomys, O. F.;
Strelchuk, V. V.;
Konakova, R. V.

Publication type:

Article

Structural, vibrational and photodegradation properties of CuAl2O4 films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 164, doi. 10.15407/spqeo25.02.164

By:

Myroniuk, L. A.;
Dusheyko, M. G.;
Karpyna, V. A.;
Myroniuk, D. V.;
Bykov, O. I.;
Olifan, O. I.;
Kolomys, O. F.;
Strelchuk, V. V.;
Korchovyi, A. A.;
Starik, S. P.;
Tkach, V. M.;
Ievtushenko, A. I.

Publication type:

Article

Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 261, doi. 10.15407/spqeo24.03.261

By:

Strelchuk, V. V.;
Nikolenko, A. S.;
Lytvyn, P. M.;
Ivakhnenko, S. O.;
Kovalenko, T. V.;
Danylenko, I. M.;
Malyuta, S. V.

Publication type:

Article

Properties of nanosized ZnO:Ho films deposited using explosive evaporation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 139, doi. 10.15407/spqeo24.02.139

By:

Kasomov, A. M.;
Strelchuk, V. V.;
Kolomys, O. F.;
Bykov, O. I.;
Yukhymchuk, V. O.;
Zahornyi, M. M.;
Korotkov, K. A.;
Karaviera, V. M.;
Korychev, S. F.;
Iuthensko, A. I.

Publication type:

Article

Influence of microwave radiation on relaxation processes in silicon carbide.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 175, doi. 10.15407/spqeo23.02.175

By:

Bacherikov, Yu. Yu.;
Goroneskul, V. Yu.;
Gudymenko, O. Yo.;
Kladko, V. P.;
Kolomys, O. F.;
Krishchenko, I. M.;
Okhrimenko, O. B.;
Strelchuk, V. V.

Publication type:

Article

Mechanical strain in the structure of array of silicon nanowires grown on a silicon substrate.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 293, doi. 10.15407/spqeo22.03.293

By:

Klimovskaya, A. I.;
Shanina, B. D.;
Nikolenko, A. S.;
Lytvyn, P. M.;
Kalashnyk, Yu. Yu.;
Strelchuk, V. V.

Publication type:

Article

Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 206, doi. 10.15407/spqeo22.02.206

By:

Neimash, V. B.;
Nikolenko, A. S.;
Strelchuk, V. V.;
Shepeliavyi, P. Ye.;
Litvinchuk, P. M.;
Melnyk, V. V.;
Olhovik, I. V.

Publication type:

Article

Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 200, doi. 10.15407/spqeo21.02.200

By:

Bacherikov, Yu. Yu.;
Dmitruk, N. L.;
Konakova, R. V.;
Kolomys, O. F.;
Okhrimenko, O. B.;
Strelchuk, V. V.;
Lytvyn, O. S.;
Kapitanchuk, L. M.;
Svetlichnyi, A. M.

Publication type:

Article

Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 396, doi. 10.15407/spqeo20.04.396

By:

Neimash, V. B.;
Melnyk, V. V.;
Fedorenko, L. L.;
Shepeliavyi, P. Ye.;
Strelchuk, V. V.;
Nikolayenko, A. S.;
Isaiev, M. V.;
Kuzmich, A. G.

Publication type:

Article

Raman study of L-Asparagine and L-Glutamine molecules adsorbed on aluminum films in a wide frequency range.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 297, doi. 10.15407/spqeo20.03.297

By:

Golichenko, B. O.;
Naseka, V. M.;
Strelchuk, V. V.;
Kolomys, O. F.

Publication type:

Article

Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 330, doi. 10.15407/spqeo20.03.330

By:

Parfenyuk, P. V.;
Evtukh, A. A.;
Korobchuk, I. M.;
Glotov, V. I.;
Strelchuk, V. V.

Publication type:

Article

Direct synthesized graphene-like film on SiO2: Mechanical and optical properties.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 328, doi. 10.15407/spqeo19.04.328

By:

Bortchagovsky, E. G.;
Vasin, A. V.;
Lytvyn, P. M.;
Tiagulskyi, S. I.;
Slobodian, A. M.;
Verovsky, I. N.;
Strelchuk, V. V.;
Stubrov, Yu.;
Nazarov, A. N.

Publication type:

Article

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 396, doi. 10.15407/spqeo18.04.396

By:

Naumov, A. V.;
Kolomys, O. F.;
Romanyuk, A. S.;
Tsykaniuk, B. I.;
Strelchuk, V. V.;
Trius, M. P.;
Avksentyev, A. Yu.;
Belyaev, A. E.

Publication type:

Article

Vibrational states of hexagonal ZnO doped with Co.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 86

By:

Kupchak, I. M.;
Serpak, N. F.;
Strelchuk, V. V.;
Korbutyak, D. V.

Publication type:

Article

Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 46

By:

Strelchuk, V. V.;
Kolomys, O. F.;
Golichenko, B. O.;
Boyko, M. I.;
Kaganovich, E. B.;
Krishchenko, I. M.;
Kravchenko, S. O.;
Lytvyn, O. S.;
Manoilov, E. G.;
Nasieka, Iu. M.

Publication type:

Article

Photoluminescence of As2S3 doped with Cr and Yb.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 341

By:

Stronski, A. V.;
Paiuk, O. P.;
Strelchuk, V. V.;
Nasieka, Iu. M.;
Vlěek, M.

Publication type:

Article