Works by Mansun Chan

Results: 22

Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 23, p. 4223, doi. 10.1002/adfm.201600292

By:

Zhou, Changjian;
Zhao, Yuda;
Raju, Salahuddin;
Wang, Yi;
Lin, Ziyuan;
Chan, Mansun;
Chai, Yang

Publication type:

Article

Ultra-Flexible Monolithic 3D Complementary Metal-Oxide-Semiconductor Electronics.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 48, p. 1, doi. 10.1002/adfm.202305379

By:

Zhang, Jiaona;
Wang, Wanting;
Zhu, Jiahao;
Wang, Jialiang;
Zhao, Changbin;
Zhu, Tianyu;
Ren, Qinqi;
Liu, Qi;
Qiu, Rui;
Zhang, Min;
Wang, Xinwei;
Meng, Hong;
Chang, Kuan-Chang;
Zhang, Shengdong;
Chan, Mansun

Publication type:

Article

The Use of SU-8 Topographically Guided Microelectrode Array in Measuring Extracellular Field Potential Propagation.

Published in:

Annals of Biomedical Engineering, 2012, v. 40, n. 3, p. 619, doi. 10.1007/s10439-011-0432-0

By:

Law, Jessica;
Yeung, Chi-Kong;
Li, Lin;
Rudd, John;
Ingebrandt, Sven;
Chan, Mansun

Publication type:

Article

Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model.

Published in:

IETE Technical Review, 2012, v. 29, n. 1, p. 29, doi. 10.4103/0256-4602.93125

By:

Lining Zhang;
Shaodi Wang;
Chenyue Ma;
Jin He;
Chunkai Xu;
Yutao Ma;
Yun Ye;
Hailang Liang;
Qin Chen;
Mansun Chan

Publication type:

Article

Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor.

Published in:

IETE Technical Review, 2009, v. 26, n. 6, p. 430, doi. 10.4103/0256-4602.57828

By:

Yu Chen;
Jin He;
Yinglei Wang;
Xinnan Lin;
Lining Zhang;
Mansun Chan

Publication type:

Article

Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces.

Published in:

NPJ 2D Materials & Applications, 2020, v. 4, n. 1, p. 1, doi. 10.1038/s41699-020-00179-9

By:

Zhou, Changjian;
Zhang, Shouyong;
Lv, Zhe;
Ma, Zichao;
Yu, Cui;
Feng, Zhihong;
Chan, Mansun

Publication type:

Article

P‐5: Improved Split C–V Technique for Effective Mobility Extraction in Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs with Short Channel.

Published in:

SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 1794, doi. 10.1002/sdtp.16953

By:

Zhang, Yuqing;
Li, Jiye;
Guan, Yuhang;
Zhang, Yuhan;
Yang, Huan;
Chan, Mansun;
Lu, Lei;
Zhang, Shengdong

Publication type:

Article

P-9: Improved Electrical Stability of Double-Gate a-IGZO TFTs.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1151, doi. 10.1002/sdtp.10035

By:

He, Xin;
Wang, Ling;
Deng, Wei;
Xiao, Xiang;
Zhang, Letao;
Leng, Chuanli;
Chan, Mansun;
Zhang, Shengdong

Publication type:

Article

Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts.

Published in:

Nanomaterials (2079-4991), 2020, v. 10, n. 10, p. 1918, doi. 10.3390/nano10101918

By:

Ma, Zichao;
Zhou, Shaolin;
Zhou, Changjian;
Xiao, Ying;
Li, Suwen;
Chan, Mansun

Publication type:

Article

Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate.

Published in:

Nanomaterials (2079-4991), 2019, v. 9, n. 3, p. 473, doi. 10.3390/nano9030473

By:

Xiao, Ying;
Ahmed, Zubair;
Ma, Zichao;
Zhou, Changjian;
Zhang, Lining;
Chan, Mansun

Publication type:

Article

Editorial: Hardware implementation of spike-based neuromorphic computing and its design methodologies.

Published in:

Frontiers in Neuroscience, 2023, p. 1, doi. 10.3389/fnins.2022.1113983

By:

Lining Zhang;
Mansun Chan

Publication type:

Article

A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs.

Published in:

Molecular Simulation, 2009, v. 35, n. 6, p. 448, doi. 10.1080/08927020802609454

By:

Jin He;
Lining Zhang;
Rui Zheng;
Jian Zhang;
Mansun Chan

Publication type:

Article

A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs.

Published in:

Molecular Simulation, 2009, v. 35, n. 6, p. 483, doi. 10.1080/08927020802706995

By:

Jin He;
Lining Zhang;
Jian Zhang;
Chenyue Ma;
Feilong Liu;
Mansun Chan

Publication type:

Article

Self‐Driven Metal–Semiconductor–Metal WSe2 Photodetector with Asymmetric Contact Geometries.

Published in:

Advanced Functional Materials, 2018, v. 28, n. 45, p. N.PAG, doi. 10.1002/adfm.201802954

By:

Zhou, Changjian;
Raju, Salahuddin;
Li, Bin;
Chan, Mansun;
Chai, Yang;
Yang, Cary Y.

Publication type:

Article

3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300150

By:

Zhang, Yuqing;
Li, Jiye;
Li, Jinxiong;
Huang, Tengyan;
Guan, Yuhang;
Zhang, Yuhan;
Yang, Huan;
Chan, Mansun;
Wang, Xinwei;
Lu, Lei;
Zhang, Shengdong

Publication type:

Article

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (Adv. Electron. Mater. 10/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200480

By:

Ma, Zichao;
Estrada, Cristine Jin;
Gong, Kui;
Zhang, Lining;
Chan, Mansun

Publication type:

Article

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200480

By:

Ma, Zichao;
Estrada, Cristine Jin;
Gong, Kui;
Zhang, Lining;
Chan, Mansun

Publication type:

Article

Low Frequency Behavior of CVD Graphene from DC to 40 GHz.

Published in:

Progress in Electromagnetics Research C, 2017, v. 71, p. 1, doi. 10.2528/pierc16111901

By:

Rong Wang;
Raju, Salahuddin;
Mansun Chan;
Li Jun Jiang

Publication type:

Article

Intercoupling of Cascaded Metasurfaces for Broadband Spectral Scalability.

Published in:

Materials (1996-1944), 2023, v. 16, n. 5, p. 2013, doi. 10.3390/ma16052013

By:

Zhou, Shaolin;
Liu, Liang;
Deng, Qinling;
Liao, Shaowei;
Xue, Quan;
Chan, Mansun

Publication type:

Article

Highly Aligned Graphene/Polymer Nanocomposites with Excellent Dielectric Properties for High-Performance Electromagnetic Interference Shielding.

Published in:

Advanced Materials, 2014, v. 26, n. 31, p. 5480, doi. 10.1002/adma.201305293

By:

Yousefi, Nariman;
Sun, Xinying;
Lin, Xiuyi;
Shen, Xi;
Jia, Jingjing;
Zhang, Biao;
Tang, Benzhong;
Chan, Mansun;
Kim, Jang-Kyo

Publication type:

Article

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 14, p. 1, doi. 10.1002/admi.202102349

By:

Zhang, Jiaona;
Zhang, Min;
Chang, Kuan‐Chang;
Rong, Zhao;
Zhang, Yuqing;
Zhang, Shengdong;
Chan, Mansun

Publication type:

Article

Modulatory action of potassium channel openers on field potential and histamine release from rat peritoneal mast cells.

Published in:

Canadian Journal of Physiology & Pharmacology, 2009, v. 87, n. 8, p. 624, doi. 10.1139/Y09-047

By:

Chi-Kong Yeung;
Jessica Ka-Yan Law;
Sze-Wing Sam;
Ingebrandt, Sven;
Lau, Hang-Yung Alaster;
Rudd, John Anthony;
Chan, Mansun

Publication type:

Article

Works by Mansun Chan

Carrier Type Control of WSe<sub>2</sub> Field-Effect Transistors by Thickness Modulation and MoO<sub>3</sub> Layer Doping.

Ultra-Flexible Monolithic 3D Complementary Metal-Oxide-Semiconductor Electronics.

The Use of SU-8 Topographically Guided Microelectrode Array in Measuring Extracellular Field Potential Propagation.

Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model.

Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor.

Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces.

P‐5: Improved Split C–V Technique for Effective Mobility Extraction in Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs with Short Channel.

P-9: Improved Electrical Stability of Double-Gate a-IGZO TFTs.

Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts.

Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate.

Editorial: Hardware implementation of spike-based neuromorphic computing and its design methodologies.

A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs.

A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs.

Self‐Driven Metal–Semiconductor–Metal WSe<sub>2</sub> Photodetector with Asymmetric Contact Geometries.

3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories.

On‐Chip Integrated High Gain Complementary MoS<sub>2</sub> Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (Adv. Electron. Mater. 10/2022).

On‐Chip Integrated High Gain Complementary MoS<sub>2</sub> Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors.

Low Frequency Behavior of CVD Graphene from DC to 40 GHz.

Intercoupling of Cascaded Metasurfaces for Broadband Spectral Scalability.

Highly Aligned Graphene/Polymer Nanocomposites with Excellent Dielectric Properties for High-Performance Electromagnetic Interference Shielding.

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment.

Modulatory action of potassium channel openers on field potential and histamine release from rat peritoneal mast cells.