Works by Karavanskii, V. A.
Results: 22
Preparation and Study of the Optical Properties of Porous Graphite.
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- JETP Letters, 2001, v. 74, n. 3, p. 186, doi. 10.1134/1.1410227
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- Article
Resonant Radiationless Excitation Transfer to I[sub 2] Molecules Sorbed in Pores of Porous Silicon.
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- JETP Letters, 2001, v. 73, n. 10, p. 510, doi. 10.1134/1.1387516
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- Article
Observation of Coherent Phonon States in Porous Silicon Films.
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- JETP Letters, 2000, v. 71, n. 7, p. 298, doi. 10.1134/1.568338
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Modification of porous silicon in ultrahigh vacuum and contribution of graphite nanocrystallites to photoluminescence.
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- JETP Letters, 1996, v. 63, n. 2, p. 119, doi. 10.1134/1.566989
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- Article
Photophysical Processes Stimulated in Nanoporous Silicon by High-Power Laser Radiation.
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- Journal of Experimental & Theoretical Physics, 2000, v. 90, n. 1, p. 121, doi. 10.1134/1.559082
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- Article
Determination of phenylalkylamine compounds using surface-assisted desorption/ionization from amorphous silicon.
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- Journal of Analytical Chemistry, 2010, v. 65, n. 14, p. 1504, doi. 10.1134/S1061934810140108
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- Article
Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers.
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- Crystallography Reports, 2009, v. 54, n. 3, p. 379, doi. 10.1134/S1063774509030031
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X-ray diffraction study of the morphology and structure of pulse-anodized porous Si multilayers.
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- Crystallography Reports, 2008, v. 53, n. 5, p. 742, doi. 10.1134/S1063774508050039
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- Article
Characterization of the Structure of Porous Germanium Layers by High-Resolution X-ray Diffractometry.
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- Crystallography Reports, 2003, v. 48, n. 2, p. 326, doi. 10.1134/1.1564216
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- Article
Structure of Porous Surface Layers of Single-Crystal GaAs(001) Wafers from Data of X-ray Diffractometry and Reflectometry.
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- Crystallography Reports, 2002, v. 47, n. 6, p. 1051, doi. 10.1134/1.1523526
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Study of Surface and Interface Roughnesses in Porous Silicon by High-Resolution X-ray Methods.
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- Crystallography Reports, 2000, v. 45, n. 5, p. 842, doi. 10.1134/1.1312933
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- Article
X-ray scattering by porous silicon modulated structures.
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- Crystallography Reports, 2012, v. 57, n. 2, p. 185, doi. 10.1134/S1063774511060162
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Strong optical nonlinearities in quantum wires and dots of porous silicon.
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- Physica Status Solidi (B), 1995, v. 188, n. 1, p. 297, doi. 10.1002/pssb.2221880127
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Influence of Iodine‐Containing Solutions on the Condition of a Porous Silicon Surface and Its Photoluminescent Properties.
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- Journal of Applied Spectroscopy, 2004, v. 71, n. 1, p. 89, doi. 10.1023/B:JAPS.0000025354.48736.a9
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Diamond-like and Graphite-like Carbon States in Short-Period Superlattices.
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- JETP Letters, 2004, v. 79, n. 6, p. 282, doi. 10.1134/1.1759410
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Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs.
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- Semiconductors, 2001, v. 35, n. 8, p. 949, doi. 10.1134/1.1393033
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Ion implantation of porous gallium phosphide.
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- Semiconductors, 1998, v. 32, n. 8, p. 886, doi. 10.1134/1.1187478
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Light absorption and photoluminescence of porous silicon.
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- Semiconductors, 1998, v. 32, n. 8, p. 896, doi. 10.1134/1.1187480
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The structure of porous gallium phosphide.
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- Semiconductors, 1998, v. 32, n. 2, p. 213, doi. 10.1134/1.1187548
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Radiation hardness of porous silicon.
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- Semiconductors, 1997, v. 31, n. 9, p. 966, doi. 10.1134/1.1187143
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Visible reflection spectra of synthetic opal infiltrated with gold nanoparticles.
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- Inorganic Materials, 2010, v. 46, n. 8, p. 862, doi. 10.1134/S002016851008011X
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Ion mobility spectrometer with ion source based on laser-irradiated porous silicon.
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- Technical Physics Letters, 2011, v. 37, n. 1, p. 15, doi. 10.1134/S1063785011010299
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- Article