Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model.Published in:IETE Technical Review, 2012, v. 29, n. 1, p. 29, doi. 10.4103/0256-4602.93125By:Lining Zhang;Shaodi Wang;Chenyue Ma;Jin He;Chunkai Xu;Yutao Ma;Yun Ye;Hailang Liang;Qin Chen;Mansun ChanPublication type:Article