Works by Govorkov, A.

Results: 28

Forecasting stock market returns over multiple time horizons.

Published in:

Quantitative Finance, 2016, v. 16, n. 11, p. 1695, doi. 10.1080/14697688.2016.1176241

By:

Kroujiline, Dimitri;
Gusev, Maxim;
Ushanov, Dmitry;
Sharov, Sergey V.;
Govorkov, Boris

Publication type:

Article

Optical properties of GaAs 1- x N x alloys grown by molecular beam epitaxy.

Published in:

Philosophical Magazine, 2006, v. 86, n. 23, p. 3477, doi. 10.1080/14786430600625677

By:

Alam, J.;
Botchkarev, A. E.;
Griffin, J. A.;
Smirnov, N. B.;
Govorkov, A. V.;
Polyakov, A. Y.;
Zavada, J. M.;
Christou, A.;
Mohammad, S. Noor

Publication type:

Article

Defects and localized states in MBE-grown GaAs 1- x N x solid solutions prepared by molecular-beam epitaxy.

Published in:

Philosophical Magazine, 2003, v. 83, n. 21, p. 2531, doi. 10.1080/0141861021000058724

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Bublik, V. T.;
Botchkarev, A. E.;
Griffin, James A.;
Johnstone, Daniel K.;
Steiner, Todd;
Noor Mohammad, S.

Publication type:

Article

Ultrastructural Study of Cell Populations in the Gastric Transplant after Esophagoplasty.

Published in:

Bulletin of Experimental Biology & Medicine, 2011, v. 150, n. 4, p. 485, doi. 10.1007/s10517-011-1175-5

By:

Lapii, G. A.;
Nepomnyashchikh, L. M.;
Sudovykh, I. E.;
Kutepov, A. V.;
Govorkov, R. V.

Publication type:

Article

Structural Modifications of Colonic Transplant in Plastic Repair of the Esophagus.

Published in:

Bulletin of Experimental Biology & Medicine, 2008, v. 146, n. 4, p. 480, doi. 10.1007/s10517-009-0330-8

By:

G. Lapii;
Yu. Chikinev;
I. Sudovykh;
R. Govorkov

Publication type:

Article

DOES THE EXISTENCE OF ANTIPARTICLES FORBID VIOLATIONS OF STATISTICS?

Published in:

Modern Physics Letters A, 1992, v. 7, n. 26, p. 2383, doi. 10.1142/S0217732392003815

By:

GOVORKOV, A. B.

Publication type:

Article

A Prototype of a Ring Neutron Detector.

Published in:

Instruments & Experimental Techniques, 2019, v. 62, n. 3, p. 305, doi. 10.1134/S0020441219030035

By:

Baskov, V. A.;
Govorkov, B. B.;
Poliansky, V. V.

Publication type:

Article

A shower axis spectrometer.

Published in:

Instruments & Experimental Techniques, 2007, v. 50, n. 4, p. 455, doi. 10.1134/S0020441207040057

By:

Baskov, V.;
Govorkov, B.;
Poliansky, V.

Publication type:

Article

High-power (Nd, Dy)-(Fe, Co)-B magnets with a low temperature coefficient of induction.

Published in:

Physics of Metals & Metallography, 2017, v. 118, n. 10, p. 935, doi. 10.1134/S0031918X1710009X

By:

Popov, A.;
Kolodkin, D.;
Gaviko, V.;
Vasilenko, D.;
Shitov, A.;
Vlasyuga, A.;
Govorkov, M.;
Bratushev, D.

Publication type:

Article

Preparation of sintered Nd-Fe-B magnets by pressless process.

Published in:

Physics of Metals & Metallography, 2012, v. 113, n. 4, p. 331, doi. 10.1134/S0031918X12040096

By:

Popov, A.;
Shitov, A.;
Gerasimov, E.;
Vasilenko, D.;
Govorkov, M.;
Bratushev, D.;
Vyatkin, V.;
Shunyaev, K.;
Mikhailova, T.

Publication type:

Article

Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 5, p. 601, doi. 10.1007/s11664-009-0973-2

By:

Polyakov, A.;
Smirnov, N.;
Govorkov, A.;
Kozhukhova, E.;
Belogorokhov, A.;
Norton, D.;
Kim, H.;
Pearton, S.

Publication type:

Article

Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 10, p. 1320, doi. 10.1007/s11664-007-0203-8

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Markov, A. V.;
Yakimov, E. B.;
Vergeles, P. S.;
Kolin, N. G.;
Merkurisov, D. I.;
Boiko, V. M.;
In-Hwan Lee;
Cheul-Ro Lee;
S. J. Pearton

Publication type:

Article

Electrical Properties of Undoped Bulk ZnO Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 663, doi. 10.1007/s11664-006-0117-x

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Kozhukhova, E. A.;
Pearton, S. J.;
Norton, D. P.;
Osinsky, A.;
Dabiran, Amir

Publication type:

Article

Optical and Electrical Properties of AIGaN Films Implanted with Mn, Co, or Cr.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 384, doi. 10.1007/s11664-004-0188-5

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Frazier, R. M.;
Thaler, G. T.;
Abernathy, C. R.;
Pearton, S. J.;
Zavada, J. M.;
Wilson, R. G.

Publication type:

Article

Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 3, p. 241, doi. 10.1007/s11664-004-0186-7

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Kim, Jihyun;
Ren, F.;
Thaler, G. T.;
Frazier, R. M.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Buyanova, I. A.;
Rudko, G. Y.;
Chen, W. M.;
C.-C. Pan, W. M.;
G.-T. Chen, W. M.;
J.-I. Chyi, W. M.;
Zavada, J. M.

Publication type:

Article

Microdrilling and micromachining with diode-pumped solid-state lasers.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 79, n. 4-6, p. 1335, doi. 10.1007/s00339-004-2766-z

By:

Otani, T.;
Herbst, L.;
Heglin, M.;
Govorkov, S. V.;
Wiessner, A. O.

Publication type:

Article

Possible Mechanism of 6-Methyl-2-Ethyl-3-Oxypyridine Age-Dependent Effect on Protein Synthesis in the Brain.

Published in:

International Journal of Neuroscience, 1987, v. 32, n. 3/4, p. 695, doi. 10.3109/00207458709043324

By:

Kuznetsov, Dmitriy A.;
Zavijalov, Nikolas V.;
Govorkov, Alexandre V.;
Ivanoff-Snaryad, Andrey A.;
Sibileva, Taniyousha M.

Publication type:

Article

Pseudodislocational Interactions in the System Germanium-Arsenic.

Published in:

Physica Status Solidi (B), 1972, v. 51, n. 1, p. 215, doi. 10.1002/pssb.2220510122

By:

Rozhanskii, V. N.;
Aresenteva, I. P.;
Zakharov, N. D.;
Govorkov, V. G.;
Voinova, N. N.

Publication type:

Article

Plastic Deformation of Corundum Single Crystals.

Published in:

Physica Status Solidi (B), 1970, v. 39, n. 2, p. 679, doi. 10.1002/pssb.19700390236

By:

Klassen-Neklyudova, M. V.;
Govorkov, V. G.;
Urusovskaya, A. A.;
Voinova, N. N.;
Kozlovskaya, E. P.

Publication type:

Article

Fiber Bragg Grating Writing by Interferometric or Phase-Mask Methods Using High-Power Excimer Lasers.

Published in:

Fiber & Integrated Optics, 1999, v. 18, n. 3, p. 189, doi. 10.1080/014680399244686

By:

Mayer, Eric E.;
Gillett, David A.;
Govorkov, Sergei

Publication type:

Article

STATISTICAL PROPERTIES OF PHONONS IN POLARITON-LIKE SYSTEM AT EQUILIBRIUM.

Published in:

Modern Physics Letters B, 1993, v. 7, n. 19, p. 1233, doi. 10.1142/S0217984993001247

By:

CHIZHOV, A. V.;
GOVORKOV, B. B.;
SHUMOVSKY, A. S.

Publication type:

Article

EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth.

Published in:

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2008, v. 2, n. 5, p. 688, doi. 10.1134/S1027451008050030

By:

Vergeles, P.;
Govorkov, A.;
Polyakov, A.;
Smirnov, N.;
Yakimov, E.

Publication type:

Article

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride.

Published in:

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 4, p. 380, doi. 10.1134/S1027451007040039

By:

Govorkov, A.;
Polyakov, A.;
Yugova, T.;
Smirnov, N.;
Petrova, E.;
Mezhennyi, M.;
Markov, A.;
Lee, I.;
Pearton, S.

Publication type:

Article

Recombination and trapping centers in pure and doped TlBr crystals.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1123, doi. 10.1134/S1063782614090103

By:

Gazizov, I.;
Zaletin, V.;
Govorkov, A.;
Kuznetsov, M.;
Lisitsky, I.;
Polyakov, A.;
Smirnov, N.

Publication type:

Article

Electronic properties and deep traps in electron-irradiated n-GaN.

Published in:

Semiconductors, 2012, v. 46, n. 4, p. 433, doi. 10.1134/S1063782612040045

By:

Brudnyi, V.;
Verevkin, S.;
Govorkov, A.;
Ermakov, V.;
Kolin, N.;
Korulin, A.;
Polyakov, A.;
Smirnov, N.

Publication type:

Article

Persistent photoconductivity in MgZnO alloys.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 577, doi. 10.1134/S1063782609050054

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Kozhukhova, E. A.;
Kim, H. S.;
Norton, D. P.;
Pearton, S. J.;
Belogorokhov, A. I.

Publication type:

Article

Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 63, doi. 10.1134/S1063782609010138

By:

Akchurin, R. Kh.;
Andreev, A. Yu.;
Berliner, L. B.;
Govorkov, O. I.;
Duraev, V. P.;
Maldzhy, A. A.;
Marmalyuk, A. A.;
Padalitsa, A. V.;
Petrovsky, A. R.;
Sabitov, D. V.;
Sukharev, A.

Publication type:

Article

Liquid etching of metallization layers on GaAs/Al x Ga1 − x as heterostructures with HNO3 + HCl + glycerol mixture.

Published in:

Inorganic Materials, 2008, v. 44, n. 12, p. 1278, doi. 10.1134/S0020168508120029

By:

Arbenina, V.;
Marmalyuk, A.;
Arbenin, D.;
Budkin, I.;
Govorkov, O.

Publication type:

Article