Works by Fedorov, L. M.

Results: 10

Discovery of Genes Active in Embryogenesis by Gene Trapping.
Published in:
Russian Journal of Developmental Biology, 2004, v. 35, n. 4, p. 247, doi. 10.1023/B:RUDO.0000036716.91784.3f
By:
- Fedorov, L. M.
Publication type:
Article
Behavior of epitaxial GaAs layers as α particle detectors.
Published in:
Technical Physics Letters, 1998, v. 24, n. 4, p. 250, doi. 10.1134/1.1262073
By:
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Ivanov, A. M.;
- Strokan, N. B.;
- Fedorov, L. M.
Publication type:
Article
The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428
By:
- Evstropov, V. V.;
- Dzhumaeva, M.;
- Zhilyaev, Yu. V.;
- Nazarov, N.;
- Sitnikova, A. A.;
- Fedorov, L. M.
Publication type:
Article
Polarization photosensitivity of GaN/Si heterojunctions.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 301, doi. 10.1134/1.1187683
By:
- Botnaruk, V. M.;
- Raevsky, S. D.;
- Belkov, V. V.;
- Zhilyaev, Yu. V.;
- Rud, Yu. V.;
- Fedorov, L. M.;
- Rud, V. Yu.
Publication type:
Article
Photoelectric properties of GaN/GaP heterostructures.
Published in:
Semiconductors, 1998, v. 32, n. 10, p. 1077, doi. 10.1134/1.1187571
By:
- Botnaryuk, V. M.;
- Raevskiı, S. D.;
- Bel’kov, V. V.;
- Zhilyaev, Yu. V.;
- Rud’, Yu. V.;
- Fedorov, L. M.;
- Rud’, V. Yu.
Publication type:
Article
Generating broadband random Gaussian signals.
Published in:
Technical Physics Letters, 2010, v. 36, n. 8, p. 733, doi. 10.1134/S106378501008016X
By:
- Zhilyaev, Yu. V.;
- Il'inskaya, N. D.;
- Inovenkov, A. N.;
- Karpov, A. A.;
- Kuznetsov, S. I.;
- Orlova, T. A.;
- Panteleev, V. N.;
- Panyutin, E. A.;
- Snytkina, S. A.;
- Titkova, O. V.;
- Fedorov, L. M.;
- Khvostikov, V. P.
Publication type:
Article
High-temperature gallium phosphide dynistors.
Published in:
Technical Physics Letters, 2009, v. 35, n. 9, p. 808, doi. 10.1134/S1063785009090077
By:
- Zhilyaev, Yu. V.;
- Panyutin, E. A.;
- Fedorov, L. M.
Publication type:
Article
Binary acceptor doping of epitaxial gallium phosphide for high-temperature electronic devices.
Published in:
Technical Physics Letters, 2008, v. 34, n. 10, p. 898, doi. 10.1134/S106378500810026X
By:
- Zhilyaev, Yu. V.;
- Panyutin, E. A.;
- Fedorov, L. M.
Publication type:
Article
Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique.
Published in:
Technical Physics Letters, 2008, v. 34, n. 1, p. 37, doi. 10.1134/S1063785008010112
By:
- Komkov, O. S.;
- Pikhtin, A. N.;
- Zhilyaev, Yu. V.;
- Fedorov, L. M.
Publication type:
Article
Correlation between the Electrical and Luminescent Properties of High-Purity Gallium Arsenide.
Published in:
Technical Physics Letters, 2004, v. 30, n. 10, p. 810, doi. 10.1134/1.1813717
By:
- Botnaryuk, M. V.;
- Zhilyaev, Yu. V.;
- Orlova, T. A.;
- Poletaev, N. K.;
- Fedorov, L. M.;
- Yusupova, Sh. A.
Publication type:
Article