Evaluating intrinsic deformations in oxygen-containing precipitates.
- Published in:
- Technical Physics Letters, 2008, v. 34, n. 2, p. 106, doi. 10.1134/S1063785008020065
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- Publication type:
- Article
Works matching AU Mezhennyi, M.
Results: 6
1
2
Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy.
- Published in:
- Crystallography Reports, 2012, v. 57, n. 2, p. 277, doi. 10.1134/S1063774512020113
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- Publication type:
- Article
3
Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy.
- Published in:
- Crystallography Reports, 2011, v. 56, n. 2, p. 274, doi. 10.1134/S1063774511020052
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- Publication type:
- Article
4
Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.
- Published in:
- Crystallography Reports, 2005, v. 50, n. 7, p. S159, doi. 10.1134/1.2133994
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- Publication type:
- Article
5
Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.
- Published in:
- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 5, p. 747, doi. 10.1134/S1027451009050140
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- Publication type:
- Article
6
Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride.
- Published in:
- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 4, p. 380, doi. 10.1134/S1027451007040039
- By:
- Publication type:
- Article