Works matching Transistor Technologies
Results: 780
2D Dielectrophoresis using an active matrix array made by thin‐film‐transistor technology.
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- IEEJ Transactions on Electrical & Electronic Engineering, 2019, v. 14, n. 9, p. 1280, doi. 10.1002/tee.22979
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Study of the UTBB <sup>BE</sup>SOI Tunnel-FET Working as a Dual-Technology Transistor.
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- Journal of Integrated Circuits & Systems, 2021, v. 16, n. 2, p. 1, doi. 10.29292/jics.v16i2.208
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Design of energy‐efficient ternary circuits using differential cascode voltage switch strategies in carbon nanotube field effect transistor technology.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 7, p. 1077, doi. 10.1049/iet-cds.2019.0375
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An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04022
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Technology and Modeling of Nonclassical Transistor Devices.
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- Journal of Electrical & Computer Engineering, 2019, p. 1, doi. 10.1155/2019/4792461
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Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors.
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- Sensors (14248220), 2019, v. 19, n. 11, p. 2454, doi. 10.3390/s19112454
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Organic Electrochemical Transistors: An Emerging Technology for Biosensing.
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- Advanced Materials Interfaces, 2022, v. 9, n. 6, p. 1, doi. 10.1002/admi.202102039
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BSIM3v3 Characterization and Simulation of MOS Si<sub>1-x</sub>Ge<sub>x</sub> Transistors with 130 nm Submicron Technology.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04021
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Rapid and Highly Sensitive Detection of Leishmania by Combining Recombinase Polymerase Amplification and Solution-Processed Oxide Thin-Film Transistor Technology.
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- Biosensors (2079-6374), 2023, v. 13, n. 8, p. 765, doi. 10.3390/bios13080765
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COMPARISON OF TWO GAN TRANSISTOR TECHNOLOGIES IN BROADBAND POWER AMPLIFIERS.
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- Microwave Journal, 2010, v. 53, n. 4, p. 184
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Thin Film Transistors Gas Sensors: Materials, Manufacturing Technologies and Test Results.
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- Electronics & Electrical Engineering, 2009, n. 89, p. 39
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An energy‐efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 4, p. 360, doi. 10.1049/cds2.12112
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ANALYSIS OF THE USE OF TRANSISTORS BASED ON SiC TECHNOLOGY IN INVERTERS IN THE CONTEXT OF ELECTROMAGNETIC COMPATIBILITY.
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- Technical Transactions / Czasopismo Techniczne, 2016, v. 1-M, n. 2, p. 33, doi. 10.4467/2353737XCT.16.027.5289
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Design of unbalanced 9:2 ternary encoder and 2:9 ternary decoder circuits in resistive random access memory and carbon nanotube field effect transistor technology.
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- International Journal of Circuit Theory & Applications, 2024, v. 52, n. 10, p. 5403, doi. 10.1002/cta.4022
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A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-01917-9
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Evaluation of safety and efficacy of insulated-gate bipolar transistor holmium laser technology for prostate enucleation in canine model: a preliminary study.
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- Lasers in Medical Science, 2024, v. 39, n. 1, p. 1, doi. 10.1007/s10103-024-04155-3
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260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882
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260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882
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- Article
基于低温多晶硅-氧化物半导体混合集成的 薄膜晶体管显示背板技术.
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- Chinese Journal of Liquid Crystal & Displays, 2021, v. 36, n. 2, p. 1, doi. 10.37188/CJLCD.2020-0268
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Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259
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A new factor for fabrication technologies evaluation for silicon nanowire transistors.
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- Telkomnika, 2020, v. 18, n. 5, p. 2597, doi. 10.12928/TELKOMNIKA.v18i5.12121
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High-power microwave LDMOS transistors for wireless data transmission technologies (Review).
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- Semiconductors, 2010, v. 44, n. 13, p. 1669, doi. 10.1134/S1063782610130105
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An Asynchronous Design for Testability and Implementation in Thin-film Transistor Technology.
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- Journal of Electronic Testing, 2011, v. 27, n. 2, p. 193, doi. 10.1007/s10836-011-5195-x
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Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100290
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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2322, doi. 10.1049/iet-pel.2015.0009
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130nm Logic Technology Featuring 60nm Transistors, Low-K Dielectrics, and Cu Interconnects.
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- Intel Technology Journal, 2002, v. 6, n. 2, p. 5
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Optimized Technologies for Cointegration of MOS Transistor and Glucose Oxidase Enzyme on a Si-Wafer.
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- Biosensors (2079-6374), 2021, v. 11, n. 12, p. 497, doi. 10.3390/bios11120497
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Recent Advances of Field-Effect Transistor Technology for Infectious Diseases.
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- Biosensors (2079-6374), 2021, v. 11, n. 4, p. 103, doi. 10.3390/bios11040103
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GALLIUM NITRIDE MICROWAVE TRANSISTOR TECHNOLOGY FOR RADAR APPLICATIONS.
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- Microwave Journal, 2008, v. 51, n. 1, p. 106
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MOSHEMT: Innovative Transistor Technology Reaches Record Frequencies.
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- Microwave Journal, 2020, v. 63, n. 3, p. 45
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Development of an ion-sensitive field effect transistor based on PVC membrane technology with improved long-term stability.
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- Electroanalysis, 1997, v. 9, n. 4, p. 316, doi. 10.1002/elan.1140090411
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Transistor Technology.
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- Nature, 1957, v. 180, n. 4598, p. 1329, doi. 10.1038/1801329a0
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- Article
基于微增材技术制造的氧化铟镓锌薄膜晶体管及其性能.
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- Electronic Components & Materials, 2021, v. 40, n. 12, p. 1171, doi. 10.14106/j.cnki.1001-2028.2021.0403
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New structure transistors for advanced technology node CMOS ICs.
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- National Science Review, 2024, v. 11, n. 3, p. 1, doi. 10.1093/nsr/nwae008
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Two-dimensional semiconductor transistors and integrated circuits for advanced technology nodes.
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- National Science Review, 2024, v. 11, n. 3, p. 1, doi. 10.1093/nsr/nwae001
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Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node.
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- Micromachines, 2019, v. 10, n. 12, p. 847, doi. 10.3390/mi10120847
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HIGH SPEED LOW POWER ANALYSIS OF 12 TRANSISTORS 2x4 LINE DECODER USING 45GPDK TECHNOLOGY.
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- Scalable Computing: Practice & Experience, 2024, v. 25, n. 5, p. 3674, doi. 10.12694/scpe.v25i5.3096
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THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy.
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- Opto-Electronics Review, 2018, v. 26, n. 4, p. 261, doi. 10.1016/j.opelre.2018.08.002
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Measuring pH in low ionic strength glacial meltwaters using ion selective field effect transistor (ISFET) technology.
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- Limnology & Oceanography, Methods, 2021, v. 19, n. 3, p. 222, doi. 10.1002/lom3.10416
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Emerging Thin‐Film Transistor Technologies and Applications.
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- Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.202001678
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Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.
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- Pediatric Radiology, 2013, v. 43, n. 9, p. 1108, doi. 10.1007/s00247-013-2674-5
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Effective dose estimation for pediatric voiding cystourethrography using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.
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- Pediatric Radiology, 2009, v. 39, n. 6, p. 608, doi. 10.1007/s00247-009-1161-5
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P‐32: Dual Gate Amorphous Silicon Thin Film Transistor Technology for High Brightness and High Frame Rate Outdoor Display Panels.
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- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 1475, doi. 10.1002/sdtp.17831
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50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates.
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- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 689, doi. 10.1002/sdtp.17618
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6‐1: Pragmatic low‐temperature polycrystalline thin‐film transistor technologies for high‐brightness and high‐temperature environments in AMOLED displays.
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- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 29, doi. 10.1002/sdtp.17445
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47‐3: In‐Cell Ambient Light Sensors (ALSs) LCD Integration Using a‐Si TFT photo‐transistor and Four‐Mask Process Architecture Technology.
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- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 684, doi. 10.1002/sdtp.16651
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40‐3: Distinguished Paper: Reliable low‐power high‐performance low‐temperature polycrystalline thin‐film transistor technologies in bottom gate‐controlled device architectures for AMOLED displays.
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- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 576, doi. 10.1002/sdtp.16623
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14.2: Invited Paper: Outlook for Low Cost Printed Active‐Matrix Light‐Emitting Displays Enabled by Vertical Light‐Emitting Transistor Technology.
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- SID Symposium Digest of Technical Papers, 2022, v. 53, p. 149, doi. 10.1002/sdtp.15876
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15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics.
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- SID Symposium Digest of Technical Papers, 2021, v. 52, p. 202, doi. 10.1002/sdtp.15066
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2.2: High‐Resolution Active‐Matrix Organic Light‐Emitting Diode Display Realized Using Elevated‐Metal Metal‐Oxide Transistor Technology.
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- SID Symposium Digest of Technical Papers, 2021, v. 52, p. 51, doi. 10.1002/sdtp.15017
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