Works matching Insulators And Dielectrics
Results: 481
Impact of volcanic ash from Cotopaxi-2015 and Tungurahua-2016 eruptions on the dielectric characteristics of suspension insulators, Ecuador.
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- Journal of Applied Volcanology, 2022, v. 11, n. 1, p. 1, doi. 10.1186/s13617-022-00117-y
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- Article
Sensing Method Using Dielectric Loss Factor to Evaluate Surface Conditions on Polluted Porcelain Insulator.
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- Sensors (14248220), 2022, v. 22, n. 23, p. 9442, doi. 10.3390/s22239442
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- Article
Influence of electric field on the ice‐coating process of insulators with a different dielectric surface.
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- IET Science, Measurement & Technology (Wiley-Blackwell), 2020, v. 14, n. 5, p. 585, doi. 10.1049/iet-smt.2018.5570
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The anisotropy of ac conductivity and dielectric constant of anisotropic conductor–insulator composites.
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- Journal of Materials Science, 2010, v. 45, n. 11, p. 2843, doi. 10.1007/s10853-010-4224-y
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- Article
Dielectric catastrophe at the magnetic field induced insulator to metal transition in Pr<sub>1-x</sub>Ca<sub>x</sub>MnO<sub>3</sub>(x = 0.30, 0.37) crystals.
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- European Physical Journal B: Condensed Matter, 2006, v. 52, n. 2, p. 199, doi. 10.1140/epjb/e2006-00282-x
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Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors.
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- Micromachines, 2019, v. 10, n. 11, p. 723, doi. 10.3390/mi10110723
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ESTIMATION OF THE EFFECTIVE DIELECTRIC RESPONSE FROM HOPPING ACTIVATION ENERGY IN THE VICINITY OF INSULATOR-METAL TRANSITION IN SEMICONDUCTORS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 1996, v. 10, n. 1, p. 59, doi. 10.1142/S0217979296000040
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Experimental investigation on dielectric/electric properties of aged polymeric insulator: correlation of permittivity and dielectric loss tangent with surface hydrophobicity.
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- Electrical Engineering, 2022, v. 104, n. 3, p. 1539, doi. 10.1007/s00202-021-01405-3
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- Article
Nanostructures bilayer ZnO/MgO dielectrics for metal-insulator-metal capacitor applications.
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- Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4213, doi. 10.1007/s10854-013-1387-8
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- Article
Disordered Ferroelectric Systems: Giant Dielectric Enhancement, Maxwell-Wagner Relaxations and Conductor–Insulator Transition.
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- Ferroelectrics, 2004, v. 307, n. 1, p. 171, doi. 10.1080/00150190490492925
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- Article
Optimizing Performance of Porcelain Insulators: How does Particle Size Influence Dielectric and Mechanical Strengths?
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- Acta Mechanica Slovaca, 2021, v. 25, n. 2, p. 20, doi. 10.21496/ams.2021.017
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- Article
Low leakage stoichiometric SrTiO<sub>3</sub> dielectric for advanced metal-insulator-metal capacitors.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 5, p. 420, doi. 10.1002/pssr.201600036
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- Article
Polaronic phase transitions and complex permittivity of solid polar insulators with gigantic dielectric response.
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- Physica Status Solidi (B), 2014, v. 251, n. 3, p. 569, doi. 10.1002/pssb.201349262
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- Article
All‐Dielectric Layered Photonic Topological Insulators.
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- Laser & Photonics Reviews, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/lpor.201900091
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Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials.
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- Molecules, 2023, v. 28, n. 3, p. 1134, doi. 10.3390/molecules28031134
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Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors.
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- Molecules, 2022, v. 27, n. 12, p. 3951, doi. 10.3390/molecules27123951
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ПРО НЕМОЖЛИВІСТЬ ОДЕРЖАННЯ СТАБІЛЬНОЇ НЕГАТИВНОЇ ЄМНОСТІ В ТРАНЗИСТОРАХ MOSFET З ІЗОЛЯТОРАМИ НА ОСНОВІ ТОНКИХ ШАРІВ ДІЕЛЕКТРИКА ТА СЕГНЕТОЕЛЕКТРИКА.
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- Sensor Electronics & Microsystems Technologies / Sensorna Elektronika i Microsystemni Tekhnologii, 2022, v. 19, n. 1/2, p. 19, doi. 10.18524/1815-7459.2022.1/2.258446
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Surface waves at the interface between a dielectric and a topological insulator.
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- Optics & Spectroscopy, 2016, v. 121, n. 4, p. 635, doi. 10.1134/S0030400X16100155
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Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 17, p. 3610, doi. 10.3390/app9173610
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Easy-to-Design Nano-Coupler Between Metal-Insulator-Metal Plasmonic and Dielectric Slab Waveguides.
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- Plasmonics, 2013, v. 8, n. 2, p. 1123, doi. 10.1007/s11468-013-9519-9
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Novel analytical model for nano-coupler between metal-insulator-metal plasmonic and dielectric slab waveguides.
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- Optical & Quantum Electronics, 2018, v. 50, n. 12, p. 1, doi. 10.1007/s11082-018-1685-8
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- Article
Condition assessment of outdoor porcelain insulator based on dielectric dissipation factor evaluated from non‐linear equivalent circuit.
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- IET Science, Measurement & Technology (Wiley-Blackwell), 2016, v. 10, n. 8, p. 866, doi. 10.1049/iet-smt.2016.0116
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NOVEL HIGH VOLTAGE SILICON-ON-INSULATOR DEVICE WITH COMPOSITE DIELECTRIC BURIED LAYER.
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- Journal of Circuits, Systems & Computers, 2013, v. 22, n. 10, p. 1, doi. 10.1142/S021812661340029X
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Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications.
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- Modern Physics Letters B, 2019, v. 33, n. 34, p. N.PAG, doi. 10.1142/S0217984919504232
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Features of the Growth and Properties of Dielectric Layers and Metal−Insulator−Semiconductor Structures Obtained via the Anodic Oxidation of InAs in an Electrolyte Containing Fluorine Ions.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 2, p. 255, doi. 10.1134/S1027451018020039
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Compounds based on Group 14 elements: building blocks for advanced insulator dielectrics design.
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- Journal of Materials Science, 2015, v. 50, n. 2, p. 801, doi. 10.1007/s10853-014-8640-2
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Low-temperature dielectric anomaly arising from electronic phase separation at the Mott insulator-metal transition.
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- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-020-00307-0
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- Article
考虑气隙缺陷与介电功能梯度材料的 GIS 盆式绝缘子电场特性研究.
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- Insulating Materials, 2025, v. 58, n. 1, p. 91, doi. 10.16790/j.cnki.1009-9239.im.2025.01.011
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交流GIS/GIL绝缘子介电功能梯度化设计与 金属微粒驱离方法研究.
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- Insulating Materials, 2024, v. 57, n. 10, p. 133, doi. 10.16790/j.cnki.1009-9239.im.2024.10.017
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Ultracompact and silicon-on-insulator-compatible polarization splitter based on asymmetric plasmonic–dielectric coupling.
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- Applied Physics B: Lasers & Optics, 2013, v. 113, n. 2, p. 199, doi. 10.1007/s00340-013-5457-7
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The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography.
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- Advanced Materials, 2007, v. 19, n. 19, p. 2919, doi. 10.1002/adma.200602872
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Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators.
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- Advanced Materials, 1999, v. 11, n. 16, p. 1372, doi. 10.1002/(SICI)1521-4095(199911)11:16<1372::AID-ADMA1372>3.0.CO;2-V
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- Article
Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 9, p. 503, doi. 10.1049/mnl.2016.0370
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- Article
Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with AlO as Dielectric Layers.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1232-0
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High performance OTFTs using surface-modified nanocomposite dielectric gate insulator.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 355, doi. 10.1007/s10854-008-9621-5
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High temperature vulcanized ethylene propylene diene rubber nanocomposites as high voltage insulators: Dielectric breakdown measurements and evaluation.
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- Polymers & Polymer Composites, 2022, v. 30, p. 1, doi. 10.1177/09673911221132593
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- Article
PrOAlN dielectrics for metal insulator semiconductor stacks.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 2, p. 317, doi. 10.1002/pssa.201026404
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Dielectric Characterization and Separation Optimization of Infiltrating Ductal Adenocarcinoma via Insulator-Dielectrophoresis.
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- Micromachines, 2020, v. 11, n. 4, p. 340, doi. 10.3390/mi11040340
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The theory of a metal-insulator transition at zero temperature and features of the dielectric function in the Coulomb model of matter.
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- High Temperature, 2013, v. 51, n. 4, p. 457, doi. 10.1134/S0018151X13040044
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Microscopic Dielectric and Gyration Tensors of Incommensurately Modulated Insulators.
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- Physica Status Solidi (B), 2001, v. 228, n. 3, p. 919, doi. 10.1002/1521-3951(200112)228:3<919::AID-PSSB919>3.0.CO;2-T
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P‐18: Student Poster: Low Voltage Oxide Transistor with High Dielectric Tantalum Oxide Gate Insulator by Thermal Oxidation of Tantalum.
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- SID Symposium Digest of Technical Papers, 2022, v. 53, n. 1, p. 1103, doi. 10.1002/sdtp.15693
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Insulator–metal transition in VO<sub>2</sub> film on sapphire studied by broadband dielectric spectroscopy.
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- Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-87573-9
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Dielectric Cavity-Insulator-Metal (DCIM) Metamaterial Absorber in Visible Range.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 8, p. 1401, doi. 10.3390/nano13081401
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The Effect of Different Dielectric Materials in Designing High Performance Metal-Insulator-Metal (MIM) Capacitors.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2017, v. 7, n. 3, p. 1554, doi. 10.11591/ijece.v7i3.pp1554-1561
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Positive-bias gate-controlled metal-insulator transition in ultrathin VO<sub>2</sub> channels with TiO<sub>2</sub> gate dielectrics.
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- Nature Communications, 2015, v. 6, n. 12, p. 10104, doi. 10.1038/ncomms10104
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Graphene: Direct Growth of Highly Stable Patterned Graphene on Dielectric Insulators using a Surface‐Adhered Solid Carbon Source (Adv. Mater. 15/2018).
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- Advanced Materials, 2018, v. 30, n. 15, p. 1, doi. 10.1002/adma.201870108
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Direct Growth of Highly Stable Patterned Graphene on Dielectric Insulators using a Surface‐Adhered Solid Carbon Source.
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- Advanced Materials, 2018, v. 30, n. 15, p. 1, doi. 10.1002/adma.201706569
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Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 11, p. 8705, doi. 10.1007/s10854-020-03405-8
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Surface Scattering Expansion of the Casimir–Polder Interaction for Magneto-Dielectric Bodies: Convergence Properties for Insulators, Conductors, and Semiconductors.
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- Physics (2624-8174), 2024, v. 6, n. 1, p. 194, doi. 10.3390/physics6010014
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On the symmetry properties of dielectric tensor in incommensurately modulated insulators.
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- Ferroelectrics, 2000, v. 240, n. 1, p. 1399, doi. 10.1080/00150190008227962
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