Research on the Withstand Voltage Properties of Cr/Mn-Doped Al 2 O 3 Ceramics in Vacuum.
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- Electronic Materials, 2025, v. 6, n. 1, p. 4, doi. 10.3390/electronicmat6010004
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- Article
Works matching IS 26733978 AND DT 2025 AND VI 6 AND IP 1
Results: 4
1
2
Determination of the Band Gap Energy of SnO 2 and ZnO Thin Films with Different Crystalline Qualities and Doping Levels.
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- Electronic Materials, 2025, v. 6, n. 1, p. 3, doi. 10.3390/electronicmat6010003
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- Publication type:
- Article
3
Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density.
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- Electronic Materials, 2025, v. 6, n. 1, p. 2, doi. 10.3390/electronicmat6010002
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- Publication type:
- Article
4
Tribological, Thermal, Kinetic, and Surface Microtextural Characterization of Prime p-Type <100> Silicon Wafer CMP for Direct Wafer Bonding Applications.
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- Electronic Materials, 2025, v. 6, n. 1, p. 1, doi. 10.3390/electronicmat6010001
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- Publication type:
- Article