Works matching IS 26733978 AND DT 2024 AND VI 5 AND IP 4
Results: 8
A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors.
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- Electronic Materials, 2024, v. 5, n. 4, p. 321, doi. 10.3390/electronicmat5040020
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- Article
Polyimide-Based Dielectric Materials for High-Temperature Capacitive Energy Storage.
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- Electronic Materials, 2024, v. 5, n. 4, p. 303, doi. 10.3390/electronicmat5040019
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- Article
Direct Writing of Metal Nanostructures with Focused Helium Ion Beams.
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- Electronic Materials, 2024, v. 5, n. 4, p. 293, doi. 10.3390/electronicmat5040018
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- Article
Microchannel Heat Sinks—A Comprehensive Review.
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- Electronic Materials, 2024, v. 5, n. 4, p. 249, doi. 10.3390/electronicmat5040017
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- Article
The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility.
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- Electronic Materials, 2024, v. 5, n. 4, p. 239, doi. 10.3390/electronicmat5040016
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- Article
Intrinsic Metal Component-Assisted Microwave Pyrolysis and Kinetic Study of Waste Printed Circuit Boards.
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- Electronic Materials, 2024, v. 5, n. 4, p. 221, doi. 10.3390/electronicmat5040015
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- Article
Analysis of Power Modules Including Phase Change Materials in the Top Interconnection of Semiconductor Devices.
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- Electronic Materials, 2024, v. 5, n. 4, p. 204, doi. 10.3390/electronicmat5040014
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- Article
Polymer Composites Containing Ionic Liquids: A Study of Electrical Conductivity.
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- Electronic Materials, 2024, v. 5, n. 4, p. 189, doi. 10.3390/electronicmat5040013
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- Article