Works matching IS 26733978 AND DT 2022 AND VI 3 AND IP 4
Results: 7
Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector.
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- Electronic Materials, 2022, v. 3, n. 4, p. 357, doi. 10.3390/electronicmat3040029
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- Article
Indirect Evaluation of the Electrocaloric Effect in PbZrTiO 3 (20/80)-Based Epitaxial Thin Film Structures.
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- Electronic Materials, 2022, v. 3, n. 4, p. 344, doi. 10.3390/electronicmat3040028
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- Article
Effect of Carrier Gas Flow Rates on the Structural and Optical Properties of ZnO Films Deposited Using an Aerosol Deposition Technique.
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- Electronic Materials, 2022, v. 3, n. 4, p. 332, doi. 10.3390/electronicmat3040027
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- Article
Textile Materials for Wireless Energy Harvesting.
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- Electronic Materials, 2022, v. 3, n. 4, p. 301, doi. 10.3390/electronicmat3040026
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- Article
Thermal Annealing Effect on the Structure, Optical and Electrical Properties of Lanthanum Manganite Thin Films Prepared by Reactive Co-Sputtering.
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- Electronic Materials, 2022, v. 3, n. 4, p. 291, doi. 10.3390/electronicmat3040025
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- Article
Direct Comparison of the Effect of Processing Conditions in Electrolyte-Gated and Bottom-Gated TIPS-Pentacene Transistors.
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- Electronic Materials, 2022, v. 3, n. 4, p. 281, doi. 10.3390/electronicmat3040024
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- Article
Characterization of Organic Conductive Materials as an Ecological Solution for RF Applications.
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- Electronic Materials, 2022, v. 3, n. 4, p. 265, doi. 10.3390/electronicmat3040023
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- Article