Works matching IS 25673165 AND DT 2020 AND VI 2 AND IP 4

Results: 13

Back Cover.

Published in:: InfoMat, 2020, v. 2, n. 4, p. 1, doi. 10.1002/inf2.12124
Publication type:: Article

Cover Image.

Published in:: InfoMat, 2020, v. 2, n. 4, p. 1, doi. 10.1002/inf2.12111
Publication type:: Article

Issue Information.

Published in:: InfoMat, 2020, v. 2, n. 4, p. 611, doi. 10.1002/inf2.12109
Publication type:: Article

Magnetic two‐dimensional layered crystals meet with ferromagnetic semiconductors.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 639, doi. 10.1002/inf2.12096

By:

Guo, Yilv;
Wang, Bing;
Zhang, Xiwen;
Yuan, Shijun;
Ma, Liang;
Wang, Jinlan

Publication type:

Article

WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 656, doi. 10.1002/inf2.12093

By:

Cheng, Qilin;
Pang, Jinbo;
Sun, Dehui;
Wang, Jingang;
Zhang, Shu;
Liu, Fan;
Chen, Yuke;
Yang, Ruiqi;
Liang, Na;
Lu, Xiheng;
Ji, Yanchen;
Wang, Jian;
Zhang, Congcong;
Sang, Yuanhua;
Liu, Hong;
Zhou, Weijia

Publication type:

Article

Strain modulation of phase transformation of noble metal nanomaterials.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 715, doi. 10.1002/inf2.12092

By:

Wu, Tong;
Sun, Mingzi;
Huang, Bolong

Publication type:

Article

Double‐sided transistor device processability of carrierless ultrathin silicon wafers.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 735, doi. 10.1002/inf2.12087

By:

Lai, Ruby A.;
Hymel, Thomas M.;
Liu, Bofei;
Cui, Yi

Publication type:

Article

Ultrasensitive graphene‐Si position‐sensitive detector for motion tracking.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 761, doi. 10.1002/inf2.12081

By:

Wang, Wenhui;
Liu, Kaiyang;
Jiang, Jie;
Du, Ruxia;
Sun, Litao;
Chen, Wei;
Lu, Junpeng;
Ni, Zhenhua

Publication type:

Article

Two‐dimensional MXenes for lithium‐sulfur batteries.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 613, doi. 10.1002/inf2.12080

By:

Zhang, Chuanfang (John);
Cui, Linfan;
Abdolhosseinzadeh, Sina;
Heier, Jakob

Publication type:

Article

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 769, doi. 10.1002/inf2.12076

By:

Napari, Mari;
Huq, Tahmida N.;
Maity, Tuhin;
Gomersall, Daisy;
Niang, Kham M.;
Barthel, Armin;
Thompson, Juliet E.;
Kinnunen, Sami;
Arstila, Kai;
Sajavaara, Timo;
Hoye, Robert L. Z.;
Flewitt, Andrew J.;
MacManus‐Driscoll, Judith L.

Publication type:

Article

Advanced low‐dimensional carbon materials for flexible devices.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 698, doi. 10.1002/inf2.12073

By:

Das, Chandreyee M.;
Kang, Lixing;
Ouyang, Qingling;
Yong, Ken‐Tye

Publication type:

Article

Dual‐channel type tunable field‐effect transistors based on vertical bilayer WS2(1 − x)Se2x/SnS2 heterostructures.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 752, doi. 10.1002/inf2.12071

By:

Zheng, Biyuan;
Li, Dong;
Zhu, Chenguang;
Lan, Jianyue;
Sun, Xingxia;
Zheng, Weihao;
Liu, Huawei;
Zhang, Xuehong;
Zhu, Xiaoli;
Feng, Yexin;
Xu, Tao;
Sun, Litao;
Xu, Gengzhao;
Wang, Xiao;
Ma, Chao;
Pan, Anlian

Publication type:

Article

Lead‐free perovskite MASnBr3‐based memristor for quaternary information storage.

Published in:

InfoMat, 2020, v. 2, n. 4, p. 743, doi. 10.1002/inf2.12066

By:

Qian, Wen‐Hu;
Cheng, Xue‐Feng;
Zhou, Jin;
He, Jing‐Hui;
Li, Hua;
Xu, Qing‐Feng;
Li, Na‐Jun;
Chen, Dong‐Yun;
Yao, Zhi‐Gang;
Lu, Jian‐Mei

Publication type:

Article

Works matching IS 25673165 AND DT 2020 AND VI 2 AND IP 4

Back Cover.

Cover Image.

Issue Information.

Magnetic two‐dimensional layered crystals meet with ferromagnetic semiconductors.

WSe<sub>2</sub> 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications.

Strain modulation of phase transformation of noble metal nanomaterials.

Double‐sided transistor device processability of carrierless ultrathin silicon wafers.

Ultrasensitive graphene‐Si position‐sensitive detector for motion tracking.

Two‐dimensional MXenes for lithium‐sulfur batteries.

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films.

Advanced low‐dimensional carbon materials for flexible devices.

Dual‐channel type tunable field‐effect transistors based on vertical bilayer WS<sub>2(1 − x)</sub>Se<sub>2x</sub>/SnS<sub>2</sub> heterostructures.

Lead‐free perovskite MASnBr<sub>3</sub>‐based memristor for quaternary information storage.