Works matching IS 25673165 AND DT 2020 AND VI 2 AND IP 4

Results: 13

Back Cover.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 1, doi. 10.1002/inf2.12124
Publication type:
Article
Cover Image.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 1, doi. 10.1002/inf2.12111
Publication type:
Article
Issue Information.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 611, doi. 10.1002/inf2.12109
Publication type:
Article
Magnetic two‐dimensional layered crystals meet with ferromagnetic semiconductors.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 639, doi. 10.1002/inf2.12096
By:
- Guo, Yilv;
- Wang, Bing;
- Zhang, Xiwen;
- Yuan, Shijun;
- Ma, Liang;
- Wang, Jinlan
Publication type:
Article
WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 656, doi. 10.1002/inf2.12093
By:
- Cheng, Qilin;
- Pang, Jinbo;
- Sun, Dehui;
- Wang, Jingang;
- Zhang, Shu;
- Liu, Fan;
- Chen, Yuke;
- Yang, Ruiqi;
- Liang, Na;
- Lu, Xiheng;
- Ji, Yanchen;
- Wang, Jian;
- Zhang, Congcong;
- Sang, Yuanhua;
- Liu, Hong;
- Zhou, Weijia
Publication type:
Article
Strain modulation of phase transformation of noble metal nanomaterials.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 715, doi. 10.1002/inf2.12092
By:
- Wu, Tong;
- Sun, Mingzi;
- Huang, Bolong
Publication type:
Article
Double‐sided transistor device processability of carrierless ultrathin silicon wafers.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 735, doi. 10.1002/inf2.12087
By:
- Lai, Ruby A.;
- Hymel, Thomas M.;
- Liu, Bofei;
- Cui, Yi
Publication type:
Article
Ultrasensitive graphene‐Si position‐sensitive detector for motion tracking.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 761, doi. 10.1002/inf2.12081
By:
- Wang, Wenhui;
- Liu, Kaiyang;
- Jiang, Jie;
- Du, Ruxia;
- Sun, Litao;
- Chen, Wei;
- Lu, Junpeng;
- Ni, Zhenhua
Publication type:
Article
Two‐dimensional MXenes for lithium‐sulfur batteries.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 613, doi. 10.1002/inf2.12080
By:
- Zhang, Chuanfang (John);
- Cui, Linfan;
- Abdolhosseinzadeh, Sina;
- Heier, Jakob
Publication type:
Article
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 769, doi. 10.1002/inf2.12076
By:
- Napari, Mari;
- Huq, Tahmida N.;
- Maity, Tuhin;
- Gomersall, Daisy;
- Niang, Kham M.;
- Barthel, Armin;
- Thompson, Juliet E.;
- Kinnunen, Sami;
- Arstila, Kai;
- Sajavaara, Timo;
- Hoye, Robert L. Z.;
- Flewitt, Andrew J.;
- MacManus‐Driscoll, Judith L.
Publication type:
Article
Advanced low‐dimensional carbon materials for flexible devices.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 698, doi. 10.1002/inf2.12073
By:
- Das, Chandreyee M.;
- Kang, Lixing;
- Ouyang, Qingling;
- Yong, Ken‐Tye
Publication type:
Article
Dual‐channel type tunable field‐effect transistors based on vertical bilayer WS2(1 − x)Se2x/SnS2 heterostructures.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 752, doi. 10.1002/inf2.12071
By:
- Zheng, Biyuan;
- Li, Dong;
- Zhu, Chenguang;
- Lan, Jianyue;
- Sun, Xingxia;
- Zheng, Weihao;
- Liu, Huawei;
- Zhang, Xuehong;
- Zhu, Xiaoli;
- Feng, Yexin;
- Xu, Tao;
- Sun, Litao;
- Xu, Gengzhao;
- Wang, Xiao;
- Ma, Chao;
- Pan, Anlian
Publication type:
Article
Lead‐free perovskite MASnBr3‐based memristor for quaternary information storage.
Published in:
InfoMat, 2020, v. 2, n. 4, p. 743, doi. 10.1002/inf2.12066
By:
- Qian, Wen‐Hu;
- Cheng, Xue‐Feng;
- Zhou, Jin;
- He, Jing‐Hui;
- Li, Hua;
- Xu, Qing‐Feng;
- Li, Na‐Jun;
- Chen, Dong‐Yun;
- Yao, Zhi‐Gang;
- Lu, Jian‐Mei
Publication type:
Article

Works matching IS 25673165 AND DT 2020 AND VI 2 AND IP 4

Back Cover.

Cover Image.

Issue Information.

Magnetic two‐dimensional layered crystals meet with ferromagnetic semiconductors.

WSe<sub>2</sub> 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications.

Strain modulation of phase transformation of noble metal nanomaterials.

Double‐sided transistor device processability of carrierless ultrathin silicon wafers.

Ultrasensitive graphene‐Si position‐sensitive detector for motion tracking.

Two‐dimensional MXenes for lithium‐sulfur batteries.

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films.

Advanced low‐dimensional carbon materials for flexible devices.

Dual‐channel type tunable field‐effect transistors based on vertical bilayer WS<sub>2(1 − x)</sub>Se<sub>2x</sub>/SnS<sub>2</sub> heterostructures.

Lead‐free perovskite MASnBr<sub>3</sub>‐based memristor for quaternary information storage.