Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 9

Results: 27

Issue Information.

Published in:: Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.70003
Publication type:: Article

Crack‐Controlled Stretchable Gold Conductive Electrode through One‐Step Carbon Nanotube Spray Deposition (Adv. Electron. Mater. 9/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.70002

By:

Miyakawa, Masashi;
Tsuji, Hiroshi;
Nakata, Mitsuru

Publication type:

Article

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400854

By:

Lee, Taeeun;
Jung, Yusup;
Park, Jun Young;
Kim, Sujin;
Kyoung, Sinsu;
Woo, Sola

Publication type:

Article

Mechanism of Fixed Pattern Noise of Micro‐Channel Plate Focusing on Cross‐Section of Single Channel.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400868

By:

Jiang, Dongyu;
Huang, Yonggang;
Li, Guanlin;
Xing, Yuwen;
Jiao, Peng;
Du, Yajie;
Bo, Tiezhu;
Ma, Jing;
Liu, Hui;
Jia, Jinsheng

Publication type:

Article

Investigation of Opto‐magnetic Memory Effects in Antiferromagnetic CuMnAs Using Ultrafast Heat Dynamics and Quench Switching.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400835

By:

Zubáč, Jan;
Surýnek, Miloslav;
Olejník, Kamil;
Farkaš, Andrej;
Krizek, Filip;
Nádvorník, Lukáš;
Kubaščík, Peter;
Kašpar, Zdeněk;
Trojánek, František;
Campion, Richard P.;
Novák, Vít;
Němec, Petr;
Jungwirth, Tomáš

Publication type:

Article

Tuning the Mutual Synchronization of Electrically Coupled Spin‐Torque Oscillators by Selecting the Vortex Dynamic Regime.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400808

By:

Romera, Miguel;
Talatchian, Philippe;
Wittrock, Steffen;
Lebrun, Romain;
Merazzo, Karla J.;
Bortolotti, Paolo;
Vila, Laurent;
Ferreira, Ricardo;
Cyrille, Marie Claire;
Ebels, Ursula;
Cros, Vincent;
Grollier, Julie

Publication type:

Article

Crack‐Controlled Stretchable Gold Conductive Electrode through One‐Step Carbon Nanotube Spray Deposition.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202500033

By:

Miyakawa, Masashi;
Tsuji, Hiroshi;
Nakata, Mitsuru

Publication type:

Article

Hydrogen Plasma Treatment for Improving Reliability of In‐Ga‐Zn‐O Transistors Without Side Effects Through Post‐Annealing Process.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400893

By:

Seo, Taewon;
Yun, Juyoung;
Kim, Seung‐Mo;
Jin, Changeon;
Park, Seongmin;
Seong, Suwon;
Kang, Dae Hwan;
Lee, Byoung Hun;
Chung, Yoonyoung

Publication type:

Article

Bias Induced Ambipolar Transport in Organic Heterojunction Sensors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400865

By:

Kumar, Abhishek;
Devillers, Charles H.;
Meunier‐Prest, Rita;
Sabat, Dimitri;
Lesniewska, Eric;
Bouvet, Marcel

Publication type:

Article

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400840

By:

Paasio, Ella;
Ranta, Rikhard;
Majumdar, Sayani

Publication type:

Article

Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400881

By:

Kim, Dongmin;
Lee, Jangseop;
Seo, Yoori;
Kwon, Ohhyuk;
Masouleh, Pendar Azaripour;
Lee, Jisung;
Kwon, Joonhyun;
Kim, Chul‐Heung;
Hwang, Hyunsang

Publication type:

Article

A Single‐Stage Differential Amplifier Using Organic Electrochemical Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400755

By:

Fahimi Hanzaee, Farnaz;
Dimov, Ivan B.;
Gatecliff, Luke W.;
Bayford, Richard H.;
Malliaras, George G.;
Demosthenous, Andreas;
Donaldson, Nick de N.

Publication type:

Article

Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400874

By:

Islam, Md Redwanul;
Wolff, Niklas;
Schönweger, Georg;
Kreutzer, Tom‐Niklas;
Brown, Margaret;
Gremmel, Maike;
Ollanescu‐Orendi, Eric S.;
Straňák, Patrik;
Kirste, Lutz;
Brennecka, Geoff L.;
Fichtner, Simon;
Kienle, Lorenz

Publication type:

Article

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400864

By:

Liu, Zhenliang;
Hou, Shuyi;
Wang, Yiru;
Li, Zeya;
Lei, Hangyu;
Yin, Jiang;
Gao, Xu;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400841

By:

Zheng, Sheng‐Yen;
Kao, Wei‐Ning;
Chen, Yu‐Hsing;
Wu, Yung‐Hsien

Publication type:

Article

Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400877

By:

Kumar, Nitin;
Han, Jong E.;
Beckmann, Karsten;
Cady, Nathaniel;
Sambandamurthy, G.

Publication type:

Article

A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400898

By:

Moore, Alfred;
Rafique, Saqib;
Llewelyn, Ciaran;
Lamb, Dan;
Li, Lijie

Publication type:

Article

Wearable PZT Piezoelectric Sensor Device for Accurate Arterial Pressure Pulse Waveform Measurement.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400852

By:

Li, Minyu;
Aoyama, Jun;
Inayoshi, Koya;
Zhang, Hedong

Publication type:

Article

Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400880

By:

Kageyama, Sotaro;
Okamoto, Kazuki;
Yasuoka, Shinnosuke;
Ide, Keisuke;
Hanzawa, Kota;
Hiranaga, Yoshiomi;
Hsieh, Pochun;
Hazra, Sankalpa;
Suceava, Albert;
Saha, Akash;
Yokota, Hiroko;
Shigematsu, Kei;
Azuma, Masaki;
Gopalan, Venkatraman;
Uchida, Hiroshi;
Hiramatsu, Hidenori;
Funakubo, Hiroshi

Publication type:

Article

Broadband, Single‐Layered, and Optically Transparent Reflective Phase‐Shifting‐Surface Array for Beam Manipulation and Enhanced Wireless Communications.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400827

By:

Cai, Longzhu;
Zhou, Jianjing;
Zhou, Jiaqi;
Zhang, Lei;
Jiang, Zhi Hao;
Hong, Wei

Publication type:

Article

Micro‐Engraving UV‐Sensitive Thin‐Film Transistor from Metal–Metal Oxide Nanoparticles with Band‐Gap Engineering.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400798

By:

Yang, U Jeong;
Park, Sehyun;
Choi, Woosung;
Tsukruk, Vladimir V.

Publication type:

Article

Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400780

By:

Park, Junmo;
Jung, Hanggyo;
Eom, Deokjoon;
Lee, Heesoo;
Kim, Hyunhee;
Kim, Yonghoon;
Jeon, Jongwook;
Kim, Hyoungsub

Publication type:

Article

Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400811

By:

Lee, Jaehyeok;
Cho, Hyeongmin;
Park, Jisung;
Kim, Bongju;
Schlom, Darrell G.;
Char, Kookrin

Publication type:

Article

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400823

By:

Chang, Yao‐Feng;
Huang, Yifu;
Chung, Chin‐Han;
Chen, Ying‐Chen

Publication type:

Article

Digital‐Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto‐Electronic Logic and Sen‐Memory Applications.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400834

By:

Xu, Jiaqi;
Zhao, Xiaoning;
Xie, Dan;
Lin, Ya;
Wang, Zhongqiang;
Li, Zhuangzhuang;
Xu, Haiyang;
Liu, Yichun

Publication type:

Article

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400843

By:

Chen, Sihan;
Zhang, Yue;
King, William P.;
Bashir, Rashid;
van der Zande, Arend M.

Publication type:

Article

In‐Sensor Computing‐Based Smart Sensing Architecture Implemented Using a Dual‐Gate Metal‐Oxide Thin‐Film Transistor Technology.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400572

By:

Lei, Tengteng;
Hu, Yushen;
Xie, Xinying;
Shi, Runxiao;
Wong, Man

Publication type:

Article

Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 9

Issue Information.

Crack‐Controlled Stretchable Gold Conductive Electrode through One‐Step Carbon Nanotube Spray Deposition (Adv. Electron. Mater. 9/2025).

Design of β‐Ga<sub>2</sub>O<sub>3</sub> Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga<sub>2</sub>O<sub>3</sub> Channel.

Mechanism of Fixed Pattern Noise of Micro‐Channel Plate Focusing on Cross‐Section of Single Channel.

Investigation of Opto‐magnetic Memory Effects in Antiferromagnetic CuMnAs Using Ultrafast Heat Dynamics and Quench Switching.

Tuning the Mutual Synchronization of Electrically Coupled Spin‐Torque Oscillators by Selecting the Vortex Dynamic Regime.

Crack‐Controlled Stretchable Gold Conductive Electrode through One‐Step Carbon Nanotube Spray Deposition.

Hydrogen Plasma Treatment for Improving Reliability of In‐Ga‐Zn‐O Transistors Without Side Effects Through Post‐Annealing Process.

Bias Induced Ambipolar Transport in Organic Heterojunction Sensors.

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures.

Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation.

A Single‐Stage Differential Amplifier Using Organic Electrochemical Transistors.

Oxygen Doping in Ferroelectric Wurtzite‐type Al<sub>0.73</sub>Sc<sub>0.27</sub>N: Improved Leakage and Polarity Control.

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization.

Ge N‐Channel Ferroelectric FET Memory With Al<sub>2</sub>O<sub>3</sub>/AlN Interfacial Layer by Microwave Annealing.

Noise Spectroscopy and Electrical Transport In NbO<sub>2</sub> Memristors with Dual Resistive Switching.

A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges.

Wearable PZT Piezoelectric Sensor Device for Accurate Arterial Pressure Pulse Waveform Measurement.

Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN<sub>2</sub> Film Grown by Reactive Sputtering.

Broadband, Single‐Layered, and Optically Transparent Reflective Phase‐Shifting‐Surface Array for Beam Manipulation and Enhanced Wireless Communications.

Micro‐Engraving UV‐Sensitive Thin‐Film Transistor from Metal–Metal Oxide Nanoparticles with Band‐Gap Engineering.

Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf<sub>0.8</sub>Zr<sub>0.2</sub>O<sub>2</sub> Atomic Threshold Switch.

Observation of Mobility Above 2000 cm<sup>2</sup>/V s in 2DEG at LaInO<sub>3</sub>/BaSnO<sub>3</sub> Interface by Electric‐Double‐Layer Gating.

CMOS‐Compatible HfO<sub>x</sub>‐Based Radiation Hardening Component for Neuromorphic Computing Applications.

Digital‐Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto‐Electronic Logic and Sen‐Memory Applications.

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe<sub>2</sub> Field‐Effect Transistors.

In‐Sensor Computing‐Based Smart Sensing Architecture Implemented Using a Dual‐Gate Metal‐Oxide Thin‐Film Transistor Technology.