Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 8

Results: 28

Issue Information.

Published in:: Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202570026
Publication type:: Article

High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn (Adv. Electron. Mater. 8/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202570025

By:

Moto, Kenta;
Maeda, Shintaro;
Igura, Kota;
Huang, Linyu;
Morimoto, Atsuki;
Yamamoto, Keisuke;
Toko, Kaoru

Publication type:

Article

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States (Adv. Electron. Mater. 8/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202570024

By:

Toprak, Onur;
Maudet, Florian;
Wollgarten, Markus;
Van Dijck, Charlotte;
Thewes, Roland;
Deshpande, Veeresh;
Dubourdieu, Catherine

Publication type:

Article

Understanding the Effects of Ta Doping in Sb2Te3 for High‐Performance Phase Change Memory.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400790

By:

Sung, Hansang;
Park, Jaemin;
Kim, Siwoo;
Song, Hyoin;
Park, Chanwoong;
Park, Jaein;
Ju, Sucheol;
Lee, Heon

Publication type:

Article

High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400901

By:

Moto, Kenta;
Maeda, Shintaro;
Igura, Kota;
Huang, Linyu;
Morimoto, Atsuki;
Yamamoto, Keisuke;
Toko, Kaoru

Publication type:

Article

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400765

By:

Toprak, Onur;
Maudet, Florian;
Wollgarten, Markus;
Van Dijck, Charlotte;
Thewes, Roland;
Deshpande, Veeresh;
Dubourdieu, Catherine

Publication type:

Article

Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400766

By:

Billah, Mohammad Masum;
Islam, Md Mobaidul;
Priyadarshi, Sunaina;
Kim, Jung Bae;
Bae, Yang Ho;
Lim, Rodney;
Fan, Dejiu;
Hung, Zero;
Yim, Dong Kil;
Choi, Soo Yong;
Lin, Youron;
Grillmayer, Juergen;
Ma, Custer;
Yang, Lynn;
Chen, Julian;
Jang, Jin

Publication type:

Article

Strain‐Induced Reduction of Centrosymmetry in Rare‐Earth Iron Garnet Thin Films.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400735

By:

Ahamed, EMK Ikball;
Yamahara, Hiroyasu;
Sarker, Md Shamim;
Li, Haining;
Morikawa, Kazuo;
Yamagami, Kohei;
Kobayashi, Masaki;
Seki, Munetoshi;
Tabata, Hitoshi

Publication type:

Article

Machine Learning‐Driven Surrogate Modeling for Optimization of Triboelectric Nanogenerator Design Parameters.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400771

By:

Uddin, Mohammad Abrar;
Lim, Myeongju;
Kim, Rubiga;
Burgess, Barrett London;
Roberts, Ken;
Kim, Junghyun;
Kim, Taeil

Publication type:

Article

Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400786

By:

Ran, Yuqia;
Song, Yiwen;
Li, Long;
Song, Xujin;
Gu, Pingfan;
Wang, Qi;
Du, Haifeng;
Kang, Jinfeng;
Ye, Yu

Publication type:

Article

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400804

By:

Feng, Zijian;
Kim, Jiyun;
Min, Jie;
Guan, Peiyuan;
Zhang, Shuo;
Guan, Xinwei;
Mei, Tingting;
Huang, Tianxu;
Lin, Chun‐Ho;
Hu, Long;
Chen, Fandi;
Li, Zhi;
Yi, Jiabao;
Wu, Tom;
Chu, Dewei

Publication type:

Article

Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400782

By:

Li, Xuanzhang;
Li, Yuheng;
Mei, Zhen;
Liang, Liang;
Li, Qunqing;
Fan, Shoushan;
Wei, Yang

Publication type:

Article

Control Strategies for Solution‐Processed ZTO‐Based Thin‐Film Transistors Tailored Toward Volatile Organic Compound Detection.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400810

By:

Miller, Lauren R.;
Galán‐González, Alejandro;
Nicholson, Ben;
Bowen, Leon;
Monier, Guillaume;
Borthwick, Robert J.;
White, Freddie;
Saeed, Mana;
Thompson, Richard L.;
Robert‐Goumet, Christine;
Atkinson, Del;
Zeze, Dagou A.;
Chaudhry, Mujeeb U.

Publication type:

Article

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400764

By:

Habibi, Mostafa;
Kashir, Alireza;
Oh, Seungyeol;
Jang, Hojung;
Hwang, Hyunsang

Publication type:

Article

A New Type Microwave Absorption Materials: Metal–Organic‐Frameworks (MOFs) Used as Non‐Conductive Material Combination with P‐C‐800.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400738

By:

Han, Guodong;
Zhao, Song;
Sui, Sai;
Feng, Bo;
Wang, Yudeng;
Zhou, Junxiang;
Li, Zhuolun;
Tian, Xiaoxia;
Jia, Yuxiang;
Wang, Jiafu;
Qu, Shaobo

Publication type:

Article

Printed Optoelectronic Memories Using Gr/WS2 Nanostructured Composite Ink for Retina‐Inspired Vision Persistent Synapses.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400760

By:

Bai, Jiahui;
Wang, Qiuyan;
Zheng, Qiaoqiao;
Liu, Dong;
Zhan, Hongbing;
Xu, Renjing;
Pei, Jiajie

Publication type:

Article

Degradation Properties of Organic Light‐Emitting Diodes with Modified Interface Charge Density via Dipolar Doping Studied by Displacement Current Measurement.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400788

By:

Takeda, Mihiro;
Hofmann, Alexander;
Brütting, Wolfgang;
Noguchi, Yutaka

Publication type:

Article

Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400807

By:

Karimi Azari, Ramin;
Camargo, Luan Pereira;
Garza, José Ramón Herrera;
Collins, Liam;
Yu Tsai, Wan−;
Neres, Lariel Chagas da Silva;
Dang, Patrick;
Barbosa, Martin Schwellberger;
Santato, Clara

Publication type:

Article

Ultrathin High‐Efficiency Zener Diode Fabricated Using Organized ZnS Nanoparticles in Surface‐Grafted Poly(methacrylic acid) Matrix.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400772

By:

Wieczorek, Wojciech;
Mazur, Tomasz;
Górka‐Kumik, Weronika;
Dąbczyński, Paweł;
Podborska, Agnieszka;
Bernasik, Andrzej;
Szuwarzyński, Michał

Publication type:

Article

High‐Efficiency PbS Quantum Dots Infrared Solar Cells via Numerical Simulation and Experimental Optimization.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400784

By:

Ji, Taiming;
Wu, Zhixu;
Xiang, Pengfei;
Lu, Yu;
Liu, Sisi;
Tang, Rongxin;
Wang, Yuhao;
Xia, Yong

Publication type:

Article

Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400770

By:

Qu, Chunlin;
Maini, Isha;
Guo, Qing;
Stacey, Alastair;
Moran, David A. J.

Publication type:

Article

Electrochemical Determination of Gallic Acid in Tea Samples Using Pyramidal Pt Nanoparticles.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400792

By:

Di Giulio, Tiziano;
Ramírez‐Morales, Maria Antonieta;
Mastronardi, Valentina;
Mele, Giuseppe;
Brescia, Rosaria;
Pompa, Pier Paolo;
Malitesta, Cosimino;
De Benedetto, Giuseppe Egidio;
Moglianetti, Mauro;
Malvindi, Maria Ada;
Mazzotta, Elisabetta

Publication type:

Article

Pulse Dynamics in Reduced Graphene Oxide Electrolyte‐Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion‐To‐Electron Transduction.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400791

By:

Selmi, Guilherme Segolin;
Lourenço Neto, Eduardo Rodrigues;
Lelis, Gabrielle Coelho;
Okazaki, Anderson Kenji;
Riul, Antonio;
Braunger, Maria Luisa;
de Oliveira, Rafael Furlan

Publication type:

Article

Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400734

By:

Tian, Siying;
Wang, Changhao;
Wang, Yuanjie;
Wang, Honghao;
Gao, Chenxi;
Hu, Weisen;
Wei, Jia;
Chen, Fengling;
Sun, Dapeng;
Zheng, Xu;
Li, Chaobo;
Yin, Chujun

Publication type:

Article

Multistep Fabrication of OECTs via Direct Ink Writing, With Performance Analysis Based on a Novel Measurement Protocol.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400742

By:

Ghafari, Amir Mohammad;
Backman, Oskar;
Rosqvist, Emil;
Xu, Chunlin;
Torsi, Luisa;
Macchia, Eleonora;
Österbacka, Ronald

Publication type:

Article

Self‐Powered UV Photodetectors With Ultrahigh Performance Enabled by Graphene Oxide‐Modulated CuI Hole Transport Layer.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400769

By:

Cen, Baofen;
Wang, Yabing;
Zhang, Hongrong;
Mao, Mingfen;
Wang, Tengfei;
Liu, Kaixiang;
Li, Qinghong;
Zhang, Jing;
Luo, Shengyun;
Luo, Guangcan

Publication type:

Article

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400789

By:

Ascoli, Alon;
Demirkol, Ahmet Samil;
Messaris, Ioannis;
Ntinas, Vasilis;
Prousalis, Dimitris;
Slesazeck, Stefan;
Mikolajick, Thomas;
Corinto, Fernando;
Bonnin, Michele;
Gilli, Marco;
Civalleri, Pier Paolo;
Tetzlaff, Ronald;
Chua, Leon

Publication type:

Article

Tunable Rectification in 2D Porphyrinic Metal–Organic Framework Nanosheets Molecular Heterojunctions.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400773

By:

Huang, Bing;
Wang, Xiaoyu;
He, Chaoguang;
Zhang, Yongkang;
Qi, Pan;
Wang, Ying;
Li, Tong;
Fu, Huixia;
Wei, Hui;
Guo, Cunlan

Publication type:

Article

Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 8

Issue Information.

High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn (Adv. Electron. Mater. 8/2025).

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States (Adv. Electron. Mater. 8/2025).

Understanding the Effects of Ta Doping in Sb<sub>2</sub>Te<sub>3</sub> for High‐Performance Phase Change Memory.

High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn.

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States.

Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and Excellent Stability.

Strain‐Induced Reduction of Centrosymmetry in Rare‐Earth Iron Garnet Thin Films.

Machine Learning‐Driven Surrogate Modeling for Optimization of Triboelectric Nanogenerator Design Parameters.

Monolithic 3D Logic Gates Based on p‐Te and n‐Bi<sub>2</sub>S<sub>3</sub> Complementary Thin‐Film Transistors.

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing.

Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts.

Control Strategies for Solution‐Processed ZTO‐Based Thin‐Film Transistors Tailored Toward Volatile Organic Compound Detection.

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design.

A New Type Microwave Absorption Materials: Metal–Organic‐Frameworks (MOFs) Used as Non‐Conductive Material Combination with P‐C‐800.

Printed Optoelectronic Memories Using Gr/WS<sub>2</sub> Nanostructured Composite Ink for Retina‐Inspired Vision Persistent Synapses.

Degradation Properties of Organic Light‐Emitting Diodes with Modified Interface Charge Density via Dipolar Doping Studied by Displacement Current Measurement.

Emulation of Synaptic Plasticity in WO<sub>3</sub>‐Based Ion‐Gated Transistors.

Ultrathin High‐Efficiency Zener Diode Fabricated Using Organized ZnS Nanoparticles in Surface‐Grafted Poly(methacrylic acid) Matrix.

High‐Efficiency PbS Quantum Dots Infrared Solar Cells via Numerical Simulation and Experimental Optimization.

Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with V<sub>th</sub> < −6 V and High on‐Current.

Electrochemical Determination of Gallic Acid in Tea Samples Using Pyramidal Pt Nanoparticles.

Pulse Dynamics in Reduced Graphene Oxide Electrolyte‐Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion‐To‐Electron Transduction.

Freely Selective Analog and Digital Resistive Switching Behavior of In<sub>2</sub>Se<sub>3</sub> Devices for Storage and Neuromorphic Applications.

Multistep Fabrication of OECTs via Direct Ink Writing, With Performance Analysis Based on a Novel Measurement Protocol.

Self‐Powered UV Photodetectors With Ultrahigh Performance Enabled by Graphene Oxide‐Modulated CuI Hole Transport Layer.

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor.

Tunable Rectification in 2D Porphyrinic Metal–Organic Framework Nanosheets Molecular Heterojunctions.