Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 6

Results: 28

Support Vector Machine for Prediction of the Electronic Factors of a Schottky Configuration Interlaid with Pure PVC and Doped by Sm2O3 Nanoparticles.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400624

By:

Azizian‐Kalandaragh, Yashar;
Barkhordari, Ali;
Badali, Yosef

Publication type:

Article

A Self‐Assembling Molecule for Improving the Mobility in PEDOT:PSS Hole Transport Layer for Efficient Perovskite Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400626

By:

Kim, Tae Hyung;
Kim, Bong Woo;
Im, Sang Hyuk

Publication type:

Article

Issue Information.

Published in:: Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202570019
Publication type:: Article

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer (Adv. Electron. Mater. 6/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400744

By:

Nguyen, Anh Thi;
Cho, Jungyoon;
Patel, Malkeshkumar;
Vu, Duc Anh;
Song, Jungeun;
Suh, Dongseok;
Seo, Ambrose;
Kim, Joondong;
Kim, Dong‐Wook

Publication type:

Article

Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400651

By:

Xie, Qin;
Pan, Xinqiang;
Luo, Wenbo;
Shuai, Yao;
Wang, Yi;
Tong, Junde;
Zhao, Zebin;
Wu, Chuangui;
Zhang, Wanli

Publication type:

Article

Low Band Gap Furan‐Flanked Diketopyrrolopyrrole‐Naphthobisthiadiazole Based Conjugated Polymer/Stretchable Blend for Organic Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400614

By:

Kranthiraja, Kakaraparthi;
Sethumadhavan, Vithyasaahar;
Kumagai, Shohei;
Xu, Yanan;
Erhardt, Andreas;
McNeill, Christopher R.;
Manzhos, Sergei;
Takeya, Jun;
Sonar, Prashant

Publication type:

Article

Metal‐Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400682

By:

Yang, Yujue;
Xia, Mengjia;
Zhao, Qixiao;
Pan, Zhidong;
Dong, Huafeng;
Zhang, Xin;
Wu, Fugen;
Yang, Juehan;
Huo, Nengjie

Publication type:

Article

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400660

By:

Liu, Hai‐Yang;
Zhang, Panpan;
Cao, Xianmao;
Zhang, Yang;
He, Jianping;
Zhu, Maguang;
Xiao, Mengmeng;
Zhang, Zhiyong

Publication type:

Article

Aluminum Scandium Nitride as a Functional Material at 1000 °C (Adv. Electron. Mater. 6/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202570017

By:

Gaddam, Venkateswarlu;
Dabas, Shaurya S.;
Gao, Jinghan;
Spry, David J.;
Baucom, Garrett;
Rudawski, Nicholas G.;
Yin, Tete;
Angerhofer, Ethan;
Neudeck, Philip G.;
Kim, Honggyu;
Feng, Philip X.‐L.;
Sheplak, Mark;
Tabrizian, Roozbeh

Publication type:

Article

Improving Charge Transport and Environmental Stability of Carbohydrate‐Bearing Semiconducting Polymers in Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400537

By:

Mooney, Madison;
Pandolfi, Lauren;
Wang, Yunfei;
Zhu, Chenhui;
Garg, Garima;
Kraft, Ulrike;
Gu, Xiaodan;
Rondeau‐Gagné, Simon

Publication type:

Article

Toward Enhanced Biomimetic Artificial Visual Systems Based on Organic Heterojunction Optoelectronic Synaptic Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400632

By:

Wang, Haonan;
Chen, Wandi;
Su, Wenjuan;
Zou, Zhenyou;
Weng, Shuchen;
Zhou, Xiongtu;
Wu, Chaoxing;
Guo, Tailiang;
Zhang, Yongai

Publication type:

Article

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400744

By:

Nguyen, Anh Thi;
Cho, Jungyoon;
Patel, Malkeshkumar;
Vu, Duc Anh;
Song, Jungeun;
Suh, Dongseok;
Seo, Ambrose;
Kim, Joondong;
Kim, Dong‐Wook

Publication type:

Article

Aluminum Scandium Nitride as a Functional Material at 1000 °C.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400849

By:

Gaddam, Venkateswarlu;
Dabas, Shaurya S.;
Gao, Jinghan;
Spry, David J.;
Baucom, Garrett;
Rudawski, Nicholas G.;
Yin, Tete;
Angerhofer, Ethan;
Neudeck, Philip G.;
Kim, Honggyu;
Feng, Philip X.‐L.;
Sheplak, Mark;
Tabrizian, Roozbeh

Publication type:

Article

Combinatorial Optimization and Large‐Scale Integration of Organic, Low‐Energy, and Fully‐Printed Flexible Ribbon Photosensors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400657

By:

Bairaktaris, Georgios;
Hemmi, Yudai;
Kobayashi, Ryota;
Hommura, Yuki;
Bestelink, Eva;
Matsui, Hiroyuki;
Sporea, Radu A.

Publication type:

Article

A Transient Photoelectric Spiking Neuron Based on a Highly Robust MgO Composite Threshold Switching Memristor for Selective UV Perception.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400678

By:

Cao, Yaxiong;
Wang, Rui;
Wang, Saisai;
Zeng, Tonglong;
Zhang, Wanlin;
Sun, Jing;
Ma, Xiaohua;
Wang, Hong;
Hao, Yue

Publication type:

Article

Ion Intercalation‐Mediated MoS2 Conductance Switching for Highly Energy‐Efficient Memristor Synapse.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400633

By:

Zhao, Bin;
Zhao, Xuan;
Xun, Xiaochen;
Gao, Fangfang;
Li, Qi;
Sun, Jiayi;
Ouyang, Tian;
Liao, Qingliang;
Zhang, Yue

Publication type:

Article

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400714

By:

Sudha, Pooja;
Miyagawa, Shogo;
Samanta, Arup;
Moraru, Daniel

Publication type:

Article

Neuron‐Inspired Biomolecular Memcapacitors Formed Using Droplet Interface Bilayer Networks.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400644

By:

Segars, Braydon;
Rosenberg, Kyle;
Shrestha, Sarita;
Maraj, Joshua J.;
Sarles, Stephen A.;
Freeman, Eric

Publication type:

Article

Multifunctional Native Defects Boosting the Thermoelectric Transport in Few‐Layer PdPS.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400634

By:

Yu, Zehao;
Li, Meilin;
Yang, Yu;
Yu, Peng;
Suwardi, Ady;
Zhang, Lifa;
Zhao, Yunshan

Publication type:

Article

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400312

By:

Perez Andrade, Jonathan;
Wrzesińska‐Lashkova, Angelika;
Prasoon, Anupam;
Talnack, Felix;
Haase, Katherina;
Büchner, Bernd;
Feng, Xinliang;
Vaynzof, Yana;
Hambsch, Mike;
Krupskaya, Yulia;
Mannsfeld, Stefan C. B.

Publication type:

Article

Thermal Noise‐Induced Phase Transition in Multi‐Domain Hf‐Based Antiferroelectric Material: Fatigue and Endurance Performance.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400640

By:

Luo, Sheng;
Zheng, Zijie;
Zhou, Zuopu;
Gong, Xiao;
Liang, Gengchiau

Publication type:

Article

Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400648

By:

Liu, Hao;
Lim, Ting Yong;
Tian, Shijia;
Zhai, Jinfeng;
Xiang, Du;
Liu, Tao;
Chang, Tay‐Rong;
He, Pan;
Shen, Jian

Publication type:

Article

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400665

By:

Ban, Sanghyun;
Lee, Jangseop;
Seo, Yoori;
Lee, Wootae;
Kim, Taehoon;
Hwang, Hyunsang

Publication type:

Article

3D‐Printed PDMS/Graphene Sensors with Tunable Sensitivity via Temperature‐Induced Crosslinking for Pressure Applications.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400653

By:

Chen, Chong‐You;
Sayyar, Sepidar;
Chung, Johnson;
Chen, Guan‐Yu;
Wallace, Gordon G.

Publication type:

Article

Room‐Temperature Processable Stretchable Conductive Composite Material for Electrical Interfacing in Stretchable Printed Circuit Boards.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400668

By:

Cho, Duho;
Jang, Donggoo;
Chae, Changju;
Kim, Sun Hong;
Kim, Taesu;
Lee, Su Yeon;
Park, Jang‐Ung;
Choi, Youngmin;
Jung, Sungmook

Publication type:

Article

Integrated Top‐Gate Organic Electrochemical Transistors: A Scalable Approach for Fast and Efficient Operation.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400656

By:

Solgi, Ali;
Weissbach, Anton;
Asl Soleimani, Yahya;
Yoon, Yeohoon;
Krauss, Gert;
Meier, Tommy;
Tseng, Hsin;
Thelakkat, Mukundan;
Leo, Karl;
Kleemann, Hans

Publication type:

Article

Modulating Dynamic Photoresponse Behavior of Organic Phototransistors Through Morphology Control.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400619

By:

Gong, Weijie;
Xue, Di;
Yan, Chi;
Yin, Yao;
Zhang, Yingying;
Lu, Jie;
Jiang, Jichao;
Zhang, Jidong;
Xiao, Yuran;
Ding, Feng;
Wang, Zi;
Huang, Lizhen;
Chi, Lifeng

Publication type:

Article

Bionic Visual‐Auditory Perceptual System Based on Ionotronic Neuromorphic Transistor for Information Encryption and Decryption with Sound Recognition Functions.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400642

By:

Wang, Wei Sheng;
Chen, Xin Li;
Huang, You Jie;
Huang, Xin;
Zhu, Li Qiang

Publication type:

Article

Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 6

Support Vector Machine for Prediction of the Electronic Factors of a Schottky Configuration Interlaid with Pure PVC and Doped by Sm<sub>2</sub>O<sub>3</sub> Nanoparticles.

A Self‐Assembling Molecule for Improving the Mobility in PEDOT:PSS Hole Transport Layer for Efficient Perovskite Light‐Emitting Diodes.

Issue Information.

Ag Nanowire‐Integrated MoS<sub>2</sub>/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer (Adv. Electron. Mater. 6/2025).

Effects of AlO<sub>x</sub> Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing.

Low Band Gap Furan‐Flanked Diketopyrrolopyrrole‐Naphthobisthiadiazole Based Conjugated Polymer/Stretchable Blend for Organic Field Effect Transistors.

Metal‐Semiconductor Phase Transition in Multilayer VSe<sub>2</sub> for Broadband Photodetector with High Sensitivity.

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors.

Aluminum Scandium Nitride as a Functional Material at 1000 °C (Adv. Electron. Mater. 6/2025).

Improving Charge Transport and Environmental Stability of Carbohydrate‐Bearing Semiconducting Polymers in Organic Field‐Effect Transistors.

Toward Enhanced Biomimetic Artificial Visual Systems Based on Organic Heterojunction Optoelectronic Synaptic Transistors.

Ag Nanowire‐Integrated MoS<sub>2</sub>/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer.

Aluminum Scandium Nitride as a Functional Material at 1000 °C.

Combinatorial Optimization and Large‐Scale Integration of Organic, Low‐Energy, and Fully‐Printed Flexible Ribbon Photosensors.

A Transient Photoelectric Spiking Neuron Based on a Highly Robust MgO Composite Threshold Switching Memristor for Selective UV Perception.

Ion Intercalation‐Mediated MoS<sub>2</sub> Conductance Switching for Highly Energy‐Efficient Memristor Synapse.

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor.

Neuron‐Inspired Biomolecular Memcapacitors Formed Using Droplet Interface Bilayer Networks.

Multifunctional Native Defects Boosting the Thermoelectric Transport in Few‐Layer PdPS.

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors.

Thermal Noise‐Induced Phase Transition in Multi‐Domain Hf‐Based Antiferroelectric Material: Fatigue and Endurance Performance.

Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor.

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond.

3D‐Printed PDMS/Graphene Sensors with Tunable Sensitivity via Temperature‐Induced Crosslinking for Pressure Applications.

Room‐Temperature Processable Stretchable Conductive Composite Material for Electrical Interfacing in Stretchable Printed Circuit Boards.

Integrated Top‐Gate Organic Electrochemical Transistors: A Scalable Approach for Fast and Efficient Operation.

Modulating Dynamic Photoresponse Behavior of Organic Phototransistors Through Morphology Control.

Bionic Visual‐Auditory Perceptual System Based on Ionotronic Neuromorphic Transistor for Information Encryption and Decryption with Sound Recognition Functions.