Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 4

Results: 28

Flexible and Sensitive Triboelectric Nanogenerator Strain Sensors Made of Semi‐Embedded Aligned Silver Nanowires.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400426

By:

Ye, Yang;
Ning, Jin;
Meng, Yuan;
Wang, Yuxin;
Wang, Peike;
Luo, Jingjing;
Yin, Ao;
Ren, Zhongqi;
Liu, Haipeng;
Qi, Xue;
Yu, Suzhu;
Wei, Jun

Publication type:

Article

Recyclability‐by‐design of Printed Electronics by Low‐Temperature Sintering of Silver Microparticles.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400533

By:

van Impelen, David;
González‐García, Lola;
Kraus, Tobias

Publication type:

Article

Variable‐Range Hopping Conduction in Amorphous, Non‐Stoichiometric Gallium Oxide.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400407

By:

Hein, Philipp;
Romstadt, Tobias;
Draber, Fabian;
Ryu, Jinseok;
Böger, Thorben;
Falkenstein, Andreas;
Kim, Miyoung;
Martin, Manfred

Publication type:

Article

Photo‐synaptic Memristor Devices from Solution‐processed Ga2O3 Thin Films.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400512

By:

Wang, Wei;
Gao, Xiangxiang;
Lin, Zhenhua;
Bai, Haoyu;
Cui, Dongsheng;
Su, Jie;
Zhang, Jincheng;
Hao, Yue;
Chang, Jingjing

Publication type:

Article

All‐Electronic Memristor Based on Charge Carrier Confinement in Bulk Semiconductor of Metal–Semiconductor–Metal Structure.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400396

By:

Mahmoodpoor, Abolfazl;
Marunchenko, Alexandr;
Makarov, Sergey

Publication type:

Article

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400463

By:

Chen, Xinrui;
Jiang, Tiantian;
Wang, Hanbin;
Wang, Yang;
Zhang, Miao;
Cui, Yi;
Wang, Yong;
Li, Nannan;
Du, Xinchuan;
Yan, Chaoyi;
Liu, Yuqing;
Wang, Xianfu

Publication type:

Article

Evolution of Dissipative Regimes in Atomically Thin Bi2Sr2CaCu2O8 + x Superconductor.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400496

By:

Shokri, Sanaz;
Ceccardi, Michele;
Confalone, Tommaso;
Saggau, Christian N.;
Lee, Yejin;
Martini, Mickey;
Gu, Genda;
Vinokur, Valerii M.;
Pallecchi, Ilaria;
Nielsch, Kornelius;
Caglieris, Federico;
Poccia, Nicola

Publication type:

Article

Highly Resistive Biomembranes Coupled to Organic Transistors enable Ion‐Channel Mediated Neuromorphic Synapses.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400526

By:

Maraj, Joshua J.;
Schafer, Emily A.;
Mansour, Michelle M.;
Hussein, Essraa A.;
Berryman, Joseph;
Klavon, Elizabeth;
Rivnay, Jonathan;
Sarles, Stephen A.

Publication type:

Article

2D α‐In2Se3 Flakes for High Frequency Tunable and Switchable Film Bulk Acoustic Wave Resonators.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400498

By:

Sun, Jiayi;
Cai, Weifan;
Yang, Yang;
Zhuang, Yihao;
Zhang, Qing

Publication type:

Article

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400464

By:

Sun, Yifu;
Lu, Peng;
Zhang, Lingyu;
Cao, Yu;
Bai, Lan;
Ding, Li;
Han, Jie;
Zhang, Chiyu;
Zhu, Maguang;
Zhang, Zhiyong

Publication type:

Article

A Comprehensive Guide to Fully Inkjet‐Printed IGZO Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400478

By:

Magnarin, Lorenzo;
Breitung, Ben;
Aghassi‐Hagmann, Jasmin

Publication type:

Article

Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400457

By:

Feng, Xiao;
Zhang, Yu;
Zhuang, Xinming;
Feng, Xianjin

Publication type:

Article

Interfacial Momentum Matching for Ohmic Van Der Waals Contact Construction.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400397

By:

Jabegu, Tara;
Li, Ningxin;
Okmi, Aisha;
Tipton, Benjamin;
Vlassiouk, Ivan;
Xiao, Kai;
Urazhdin, Sergei;
Yao, Yao;
Lei, Sidong

Publication type:

Article

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400438

By:

Yu, Jiajie;
Wang, Tianyu;
Lu, Chen;
Li, Zhenhai;
Xu, Kangli;
Liu, Yongkai;
Song, Yifan;
Meng, Jialin;
Zhu, Hao;
Sun, Qingqing;
Zhang, David Wei;
Chen, Lin

Publication type:

Article

Highly Stretchable LED Display Using Liquid Metal and Molybdenum‐Barriered Multilayer Electrodes with Long‐Term Reliability (Adv. Electron. Mater. 4/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202570012

By:

Miyakawa, Masashi;
Tsuji, Hiroshi;
Takei, Tatsuya;
Yamamoto, Toshihiro;
Fujisaki, Yoshihide;
Nakata, Mitsuru

Publication type:

Article

Reducing the Barrier Height in Organic Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400503

By:

Ghobadi, Arash;
Mathai, Cherian J.;
Cook, Jacob;
Bian, Guang;
Attar, Salahuddin;
Al‐Hashimi, Mohammed;
Gangopadhyay, Shubhra;
Guha, Suchismita

Publication type:

Article

Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400395

By:

Chen, Bo;
Wu, Yifang;
Liu, Yizhi;
Li, Xiaopeng;
Tai, Lu;
Sang, Pengpeng;
Wu, Jixuan;
Zhan, Xuepeng;
Chen, Jiezhi

Publication type:

Article

Transfer of Millimeter‐Scale Strained Multiferroic Epitaxial Thin Films on Rigid Substrates via an Epoxy Method Producing Magnetic Property Enhancement.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400492

By:

Barnard, James P.;
Zhang, Yizhi;
Quigley, Lizabeth;
Shen, Jianan;
Tsai, Benson Kunhung;
Chhabra, Max R.;
Noh, Jiho;
Jung, Hyunseung;
Mitrofanov, Oleg;
Sarma, Raktim;
Siddiqui, Aleem;
Brener, Igal;
Doiron, Chloe F.;
Wang, Haiyan

Publication type:

Article

Highly Stretchable LED Display Using Liquid Metal and Molybdenum‐Barriered Multilayer Electrodes with Long‐Term Reliability.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400676

By:

Miyakawa, Masashi;
Tsuji, Hiroshi;
Takei, Tatsuya;
Yamamoto, Toshihiro;
Fujisaki, Yoshihide;
Nakata, Mitsuru

Publication type:

Article

Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400495

By:

Morozovska, Anna N.;
Eliseev, Eugene A.;
Vysochanskii, Yulian M.;
Kalinin, Sergei V.;
Strikha, Maksym V.

Publication type:

Article

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400440

By:

Bagul, Pratik;
Han, Han;
Lagrain, Pieter;
Sergeant, Stefanie;
Hoflijk, Ilse;
Serron, Jill;
Richard, Olivier;
Conard, Thierry;
Van Houdt, Jan;
De Wolf, Ingrid;
McMitchell, Sean R. C.

Publication type:

Article

Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400417

By:

Rahman, KM Ashikur;
Shaikh, Mohd Saif;
Yue, Qianao;
Dissanayake, S. Senali;
Wang, Mao;
Zhou, Shengqiang;
Sher, Meng‐Ju

Publication type:

Article

Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400387

By:

Ji, Xiaoyang;
Huang, Zifeng;
Ohno, Yutaka;
Inoue, Koji;
Nagai, Yasusyohi;
Sakaida, Yoshiki;
Uratani, Hiroki;
Sun, Jinchi;
Shigekawa, Naoteru;
Liang, Jianbo;
Cheng, Zhe

Publication type:

Article

Dual‐Layer‐Per‐Array Operation Using Local Polarization Switching of Ferroelectric Tunnel FETs for Massive Neural Networks.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400606

By:

Woo, Jae Seung;
Jung, Chae Lin;
Chang, Jin Ho;
Ryu, Minjeong;
Choi, Woo Young

Publication type:

Article

Issue Information.

Published in:: Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202570013
Publication type:: Article

Ag Nanoparticle Ink for High‐Resolution Printed Electrodes and Organic Thin‐Film Transistors Using Reverse‐Offset Printing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400546

By:

Suzuki, Yamato;
Kumaki, Daisuke;
Kikkawa, Taichi;
Yoshioka, Toshiki;
Horigome, Shunsuke;
Takeda, Yasunori;
Sekine, Tomohito;
Tokito, Shizuo

Publication type:

Article

Dual‐Layer‐Per‐Array Operation Using Local Polarization Switching of Ferroelectric Tunnel FETs for Massive Neural Networks (Adv. Electron. Mater. 4/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202570011

By:

Woo, Jae Seung;
Jung, Chae Lin;
Chang, Jin Ho;
Ryu, Minjeong;
Choi, Woo Young

Publication type:

Article

Rapid Prototyping for Accelerated Establishment of Film Processing‐Performance Relationships in Silicon Phthalocyanine OFETs.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400500

By:

Cranston, Rosemary R.;
Mauthe, Jacob;
Wang, Tonghui;
Thapa, Gaurab J.;
Amassian, Aram;
Lessard, Benoît H.

Publication type:

Article

Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 4

Flexible and Sensitive Triboelectric Nanogenerator Strain Sensors Made of Semi‐Embedded Aligned Silver Nanowires.

Recyclability‐by‐design of Printed Electronics by Low‐Temperature Sintering of Silver Microparticles.

Variable‐Range Hopping Conduction in Amorphous, Non‐Stoichiometric Gallium Oxide.

Photo‐synaptic Memristor Devices from Solution‐processed Ga<sub>2</sub>O<sub>3</sub> Thin Films.

All‐Electronic Memristor Based on Charge Carrier Confinement in Bulk Semiconductor of Metal–Semiconductor–Metal Structure.

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics.

Evolution of Dissipative Regimes in Atomically Thin Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8 + x</sub> Superconductor.

Highly Resistive Biomembranes Coupled to Organic Transistors enable Ion‐Channel Mediated Neuromorphic Synapses.

2D α‐In<sub>2</sub>Se<sub>3</sub> Flakes for High Frequency Tunable and Switchable Film Bulk Acoustic Wave Resonators.

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors.

A Comprehensive Guide to Fully Inkjet‐Printed IGZO Transistors.

Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses.

Interfacial Momentum Matching for Ohmic Van Der Waals Contact Construction.

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application.

Highly Stretchable LED Display Using Liquid Metal and Molybdenum‐Barriered Multilayer Electrodes with Long‐Term Reliability (Adv. Electron. Mater. 4/2025).

Reducing the Barrier Height in Organic Transistors.

Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network.

Transfer of Millimeter‐Scale Strained Multiferroic Epitaxial Thin Films on Rigid Substrates via an Epoxy Method Producing Magnetic Property Enhancement.

Highly Stretchable LED Display Using Liquid Metal and Molybdenum‐Barriered Multilayer Electrodes with Long‐Term Reliability.

Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors.

Achieving High Ferroelectric Polarization in Ultrathin BaTiO<sub>3</sub> Films on Si.

Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon.

Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C.

Dual‐Layer‐Per‐Array Operation Using Local Polarization Switching of Ferroelectric Tunnel FETs for Massive Neural Networks.

Issue Information.

Ag Nanoparticle Ink for High‐Resolution Printed Electrodes and Organic Thin‐Film Transistors Using Reverse‐Offset Printing.

Dual‐Layer‐Per‐Array Operation Using Local Polarization Switching of Ferroelectric Tunnel FETs for Massive Neural Networks (Adv. Electron. Mater. 4/2025).

Rapid Prototyping for Accelerated Establishment of Film Processing‐Performance Relationships in Silicon Phthalocyanine OFETs.