Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 2

Results: 53

Superconductivity in Ternary Mg4Pd7As6.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400284

By:

Świątek, Hanna;
Gutowska, Sylwia;
Winiarski, Michał J.;
Wiendlocha, Bartlomiej;
Klimczuk, Tomasz

Publication type:

Article

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400145

By:

Guo, Min;
Wu, Jianting;
Ou, Hai;
Xie, Dongyu;
Zhu, Qiaoji;
Huang, Yi;
Wang, Mengye;
Liang, Lingyan;
Liang, Xiaoci;
Liu, Fengjuan;
Ning, Ce;
Lu, Xubing;
Cao, Hongtao;
Yuan, Guangcai;
Liu, Chuan

Publication type:

Article

Correction to "Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source".

Published in:

2025

By:

Meng, Dequan;
Chen, Shiwei;
Ren, Chuantong;
Li, Jiaxu;
Lan, Guibin;
Li, Chaozhong;
Liu, Yong;
Su, Yurong;
Yu, Guoqiang;
Chai, Guozhi;
Xiong, Rui;
Zhao, Weisheng;
Yang, Guang;
Liang, Shiheng

Publication type:

Correction Notice

Photovoltaic Charge Lithography on Passive Dielectric Substrates Using Fe:LiNbO3 Stamps.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400327

By:

Sebastián‐Vicente, Carlos;
Zamboni, Riccardo;
García‐Cabañes, Angel;
Carrascosa, Mercedes

Publication type:

Article

Non‐linear Photoexcited Negative Differential Conductivity in Bulk SrTiO3 Single Crystals.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400285

By:

Newing, Alexander Connor;
Alexe, Marin

Publication type:

Article

Correction to "Relation between Spherulitic Growth, Molecular Organization and Charge Carrier Transport in Meniscus‐Guided Coated Organic Semiconducting Films".

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400729

By:

Zhang, Ke;
Borkowski, Michał;
Wucher, Philipp;
Beaujuge, Pierre M.;
Michels, Jasper;
Blom, Paul. W. M.;
Marszalek, Tomasz;
Pisula, Wojciech

Publication type:

Article

Graphene Field‐Effect Transistors toward Study of Cardiac Ischemia at Early Stage.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400332

By:

Hlukhova, Hanna;
Kireev, Dmitry;
Offenhäusser, Andreas;
Pustovyi, Denys;
Vitusevich, Svetlana

Publication type:

Article

Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400314

By:

Wei, Junwen;
Xu, Xinkai;
Lin, Zijin;
Qu, Yuanjing;
Tang, Xiaoli;
Zhong, Zhiyong;
Zhang, Huaiwu;
Jin, Lichuan

Publication type:

Article

Enhanced Coupling Between Soft Ferromagnetism and Displacive Ferroelectricity in the Pb‐Site Modified PbFe1/2Nb1/2O3.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400370

By:

Park, Ji‐Hun;
Cho, Jae‐Hyeon;
Lee, Nyun Jong;
Lee, Hyun‐Jae;
Lee, Ju‐Hyeon;
Lee, Geon‐Ju;
Marlton, Frederick P.;
Suzuki, Motohiro;
Hinterstein, Manuel;
Oh, Yoon Seok;
Choi, Ji‐Won;
Hwang, Geon‐Tae;
Lee, Jun Hee;
Kim, Sanghoon;
Kim, Kee Hoon;
Jo, Wook

Publication type:

Article

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400279

By:

Yang, Feng

Publication type:

Article

Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400333

By:

Bai, Zhiying;
Zhang, He;
He, Jiaqi;
He, Dawei;
Wang, Jiarong;
Wu, Wenwen;
Zhang, Yinglin;
Wang, Wenjie;
Wang, Yongsheng;
Yu, Xiaohui;
Zhang, Xiaoxian

Publication type:

Article

Single‐Cell Membrane Potential Stimulation and Recording by an Electrolyte‐Gated Organic Field‐Effect Transistor.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400134

By:

Lago, Nicolò;
Galli, Alessandra;
Tonello, Sarah;
Ruiz‐Molina, Sara;
Marino, Saralea;
Casalini, Stefano;
Buonomo, Marco;
Pisu, Simona;
Mas‐Torrent, Marta;
Giorgi, Giada;
Pedersen, Morten Gram;
Bortolozzi, Mario;
Cester, Andrea

Publication type:

Article

All‐Solution‐Processed, All‐Organic Flexible Transistor and Circuit Based on Dry‐Transfer Polymer Films.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400317

By:

Guo, Shanlei;
Sun, Jing;
Wang, Xue;
Tong, Yanhong;
Tang, Qingxin;
Liu, Yichun

Publication type:

Article

Exploring the Optoelectronic and Photovoltaic Characteristics of Lead‐Free Cs2TiBr6 Double Perovskite Solar Cells: A DFT and SCAPS‐1D Investigations.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400348

By:

Hossain, M. Khalid;
Islam, Sahjahan;
Sakib, M. Najmus;
Uddin, M. Shihab;
Toki, Gazi F. I.;
Rubel, Mirza H. K.;
Nasrin, Jahanara;
Shahatha, Sara H.;
Mohammad, M. R.;
Alothman, Asma A.;
Raorane, Chaitany Jayprakash;
Haldhar, Rajesh;
Bencherif, Hichem

Publication type:

Article

Tuning the Resistance of a VO2 Junction by Focused Laser Beam and Atomic Force Microscopy.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400249

By:

Fang, Zhuoqun;
Alzate‐Banguero, Melissa;
Rajapurohita, Amit R.;
Simmons, Forrest;
Carlson, Erica W.;
Chen, Zhuoying;
Aigouy, Lionel;
Zimmers, Alexandre

Publication type:

Article

Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400268

By:

Dai, Zhiyuan;
Yu, Yu;
Guan, Haibiao;
Wang, Ruowen;
Ye, Tao;
Bu, Yonghao;
Deng, Jie;
Shi, Mengdie;
Xin, Rui;
Li, Tianxin;
Shu, Haibo;
Chen, Xiaoshuang;
Zhou, Jing

Publication type:

Article

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400324

By:

Li, Xin;
Li, Cheng;
Zhou, Linming;
Guo, Xiangwei;
Huang, Yuhui;
Zhang, Hui;
Dong, Shurong;
Wu, Yongjun;
Hong, Zijian

Publication type:

Article

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400328

By:

Eun, Jun‐Su;
Lee, Jinuk;
Na, Jeong‐Hyeon;
Park, Jun‐Hyeong;
Park, Won;
Feng, Junhao;
Seo, Kyung‐Ho;
Jang, Jaewon;
Kang, In Man;
Kim, Do‐Kyung;
Bae, Jin‐Hyuk

Publication type:

Article

Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400318

By:

Sleziona, Stephan;
Kharsah, Osamah;
Skopinski, Lucia;
Daniel, Leon;
Schmeink, Jennifer;
Schleberger, Marika

Publication type:

Article

Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400282

By:

Kim, Sungjoon;
Ji, Hyeonseung;
Kim, Sungjun;
Choi, Woo Young

Publication type:

Article

Spin Current Generation at the Hybrid Ferromagnetic Metal/Organic Semiconductor Interface as Revealed by Multiple Magnetic Resonance Techniques.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400322

By:

Takaishi, Kohei;
Tsutsumi, Haruka;
Matsuoka, Hideto;
Suzuki, Takayuki;
Kanemoto, Katsuichi

Publication type:

Article

Anomalous Magnetoelectric Coupling in the Paramagnetic State of a Chiral and Polar Magnet.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400308

By:

Xu, Xianghan;
Du, Kai;
Cheong, Sang‐Wook;
Cava, R. J.

Publication type:

Article

Purely Electric‐Driven Field‐Free Magnetization Switching in L10‐FePt Single Film for Reconfigurable Spin Logic Computing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400270

By:

Wang, Yuanbo;
Zhang, Jingyan;
Dou, Pengwei;
Deng, Xiao;
Zhao, Yunchi;
Qi, Jie;
Zhang, Yi;
Shao, Bokai;
Xu, Jiawang;
Zheng, Xinqi;
Huang, He;
Wu, Yanfei;
Shen, Baogen;
Wang, Shouguo

Publication type:

Article

Self‐Selective Crossbar Synapse Array with n‐ZnO/p‐NiOx/n‐ZnO Structure for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400347

By:

Chung, Peter Hayoung;
Ryu, Jiyeon;
Seo, Daejae;
Sahu, Dwipak Prasad;
Song, Minju;
Kim, Junghwan;
Yoon, Tae‐Sik

Publication type:

Article

Impact of Gate Voltage on Mobility of Charge Carriers in Conductive Channel of Organic Molecular Semiconductors: Transport Landscape Assessed by Alternating and Direct Current Mode Techniques.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400304

By:

Choi, Wookjin;
Matsuda, Wakana;
Seki, Shu

Publication type:

Article

Size Enlargement of CsPbI3 Perovskite Nanocrystals by Trioctylphosphine in the Synthesis for Highly Efficient Deep‐Red Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400334

By:

Cheng, Huiyuan;
Zheng, Yifan;
Lou, Yu;
Sun, Mengjie;
Zhang, Guodong;
Wang, Haoran;
Wu, Tom;
Bai, Yang;
Shao, Yuchuan

Publication type:

Article

Angular Dependence of Hump‐Shape Hall Effects for Distinguishing between Karplus–Luttinger and Geometrical Origins.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400162

By:

Lim, Zhi Shiuh;
Chow, Lin Er;
Khoo, Khoong Hong;
Omar, Ganesh Ji;
Luo, Zhaoyang;
Zhang, Zhaoting;
Yan, Hong;
Yang, Ping;
Laskowski, Robert;
Ariando, A.

Publication type:

Article

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400266

By:

Hu, Ke;
Guo, Zean;
Wang, Jiawei;
Lu, Congyan;
Wang, Mingliang;
Wang, Tianyuan;
Liao, Fuxi;
Yang, Guanhua;
Lu, Nianduan;
Li, Ling

Publication type:

Article

Band Versus Hopping Transport in Conducting Polymers by Ab Initio Molecular Dynamics: Exploring the Effect of Electric Field, Trapping and Temperature.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400239

By:

Zahabi, Najmeh;
Zozoulenko, Igor

Publication type:

Article

Organic Multibit Phototransistor Memories with High External Quantum Efficiency.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400307

By:

Bai, Shaoling;
Haase, Katherina;
Hambsch, Mike;
Mannsfeld, Stefan C. B.

Publication type:

Article

Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐Based Memristive Devices.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400313

By:

Khuu, Thoai‐Khanh;
Koroleva, Aleksandra;
Moncasi, Carlos;
Stangl, Alexander;
Cooper, David;
Lefèvre, Gauthier;
Wilhelm, Fabrice;
Rogalev, Andrei;
Weber, Matthieu;
Jiménez, Carmen;
Burriel, Mónica

Publication type:

Article

Microstructural Underpinnings of Giant Intrinsic Exchange Bias in Epitaxial NiCo2O4 Thin Films.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400149

By:

Yang, Detian;
Subedi, Arjun;
Liu, Chao;
Ambaye, Haile;
Lauter, Valeria;
Dowben, Peter A.;
Liu, Yaohua;
Xu, Xiaoshan

Publication type:

Article

Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400184

By:

Calvi, Sabrina;
Bertelli, Marco;
De Simone, Sara;
Maita, Francesco;
Prili, Simone;
Diaz Fattorini, Adriano;
De Matteis, Fabio;
Mussi, Valentina;
Righi Riva, Flavia;
Longo, Massimo;
Arciprete, Fabrizio;
Calarco, Raffaella

Publication type:

Article

Epitaxial Single‐Crystalline PZT Thin Films on ZrO2‐Buffered Si Wafers Fabricated Using Spin‐Coating for Mass‐Produced Memristor Devices.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400280

By:

Li, Haining;
Kijima, Takeshi;
Yamahara, Hiroyasu;
Tabata, Hitoshi;
Seki, Munetoshi

Publication type:

Article

Correction to "Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors".

Published in:

2025

By:

Liu, Qian;
Kanahashi, Kaito;
Matsuki, Keiichiro;
Manzhos, Sergei;
Feron, Krishna;
Bottle, Steven E.;
Tanaka, Kazuhiro;
Nanseki, Tomonori;
Takenobu, Taishi;
Tanaka, Hisaaki;
Sonar, Prashant

Publication type:

Correction Notice

Band Alignment Engineering in 2D Ferroelectric Van der Waals Heterostructures for All‐In‐One Optoelectronic Architecture.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400269

By:

Lu, Yanan;
Xie, Dabao;
Zhang, Congmin;
Cao, Dan;
Chen, Xiaoshuang;
Shu, Haibo

Publication type:

Article

MXene Inks for High‐Throughput Printing of Electronics.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400170

By:

Abdolhosseinzadeh, Sina;
Schneider, René;
Jafarpour, Mohammad;
Merlet, Céline;
Nüesch, Frank;
Zhang, Chuanfang;
Heier, Jakob

Publication type:

Article

Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400204

By:

Vecchi, Sara;
Puglisi, Francesco Maria;
Appelt, Pascal;
Guido, Roberto;
Wang, Xuetao;
Slesazeck, Stefan;
Mikolajick, Thomas;
Lancaster, Suzanne

Publication type:

Article

Facile Fabrication of Melamine/MXene/FeNi‐PBA Composite Derived Multi‐Interface Magnetic Carbon Foam for High‐Efficiency Microwave Absorption.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400265

By:

Yu, Jiaao;
Luo, Hui;
Lv, Sihai;
Wang, Zhihui;
Chen, Fu;
Cheng, Yongzhi;
Li, Xiangcheng

Publication type:

Article

Multilayer Metamaterials with Ferromagnetic Domains Separated by Antiferromagnetic Domain Walls.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400251

By:

Salikhov, Ruslan;
Samad, Fabian;
Schneider, Sebastian;
Pohl, Darius;
Rellinghaus, Bernd;
Böhm, Benny;
Ehrler, Rico;
Lindner, Jürgen;
Kiselev, Nikolai S.;
Hellwig, Olav

Publication type:

Article

Issue Information.

Published in:: Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202570006
Publication type:: Article

Magnetic Field Screening of 2D Materials Revealed by Magnetic Force Microscopy (Adv. Electron. Mater. 2/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202570005

By:

Aldave, Diego A.;
López‐Polín, Guillermo;
Calle, Esther;
Begué, Adrián;
Ranchal, Rocío;
Martínez, Raúl;
Bran, Cristina;
Burzurí, Enrique;
Gómez‐Herrero, Julio;
Ares, Pablo;
Jaafar, Miriam

Publication type:

Article

Phase‐Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202570004

By:

Kaul, Prateek;
Concepción, Omar;
Wielens, Daan H.;
Zellekens, Patrick;
Li, Chuan;
Ikonic, Zoran;
Ishibashi, Koji;
Zhao, Qing‐Tai;
Brinkman, Alexander;
Grützmacher, Detlev;
Buca, Dan

Publication type:

Article

GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400290

By:

Térébénec, Damien;
Hippert, Françoise;
Bernier, Nicolas;
Castellani, Niccolo;
Noé, Pierre

Publication type:

Article

Electro‐Optical InGaZnO Synaptic Transistor with Solid State Electrolyte for Pain Perception.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400356

By:

Li, Xiaoqian;
Ji, Xingqi;
Yin, Xuemei;
Ding, Zijian;
Wang, Ning;
Li, Yuxiang;
Zhang, Jiawei;
Xin, Qian;
Song, Aimin

Publication type:

Article

A Self‐Organizing Map Spiking Neural Network Based on Tin Oxide Memristive Synapses and Neurons.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400421

By:

Wang, Yu;
Zhang, Yanzhong;
Wang, Yanji;
Wang, Xinpeng;
Zhang, Hao;
Xu, Rongqing;
Tong, Yi

Publication type:

Article

Enhancing Recoverable Bendability of Ag2Te‐Based Thermoelectrics by Elastic Strain Manipulation.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400728

By:

Fan, Zimin;
Ding, Wenjun;
Shen, Xinyi;
Luo, Jun;
Li, Wen;
Pei, Yanzhong

Publication type:

Article

Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400338

By:

Vardhan, Vaishali;
Biswas, Subhajit;
Ghosh, Sayantan;
Tsetseris, Leonidas;
Ghoshal, Tandra;
Hellebust, Stig;
Georgiev, Yordan M.;
Holmes, Justin D.

Publication type:

Article

High Power Density Micro Thermoelectric Generators for Powering IoTs.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400198

By:

Dutt, Aditya S.;
Pulumati, Nithin B;
Deng, Kangfa;
Wagner, Jens;
Brönner, Andreas;
Ellinger, Frank;
Schierning, Gabi;
Nielsch, Kornelius;
Reith, Heiko

Publication type:

Article

Phase‐Coherent Transport in GeSn Alloys on Si.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400565

By:

Kaul, Prateek;
Concepción, Omar;
Wielens, Daan H.;
Zellekens, Patrick;
Li, Chuan;
Ikonic, Zoran;
Ishibashi, Koji;
Zhao, Qing‐Tai;
Brinkman, Alexander;
Grützmacher, Detlev;
Buca, Dan

Publication type:

Article