Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 2
Results: 53
Superconductivity in Ternary Mg<sub>4</sub>Pd<sub>7</sub>As<sub>6</sub>.
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400284
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- Article
Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400145
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- Article
Correction to "Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source".
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- 2025
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- Correction Notice
Photovoltaic Charge Lithography on Passive Dielectric Substrates Using Fe:LiNbO<sub>3</sub> Stamps.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400327
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- Article
Non‐linear Photoexcited Negative Differential Conductivity in Bulk SrTiO<sub>3</sub> Single Crystals.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400285
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- Article
Correction to "Relation between Spherulitic Growth, Molecular Organization and Charge Carrier Transport in Meniscus‐Guided Coated Organic Semiconducting Films".
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400729
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- Article
Graphene Field‐Effect Transistors toward Study of Cardiac Ischemia at Early Stage.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400332
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- Article
Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400314
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- Article
Enhanced Coupling Between Soft Ferromagnetism and Displacive Ferroelectricity in the Pb‐Site Modified PbFe<sub>1/2</sub>Nb<sub>1/2</sub>O<sub>3</sub>.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400370
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- Article
Physics of Ferroelectric Wurtzite Al<sub>1−x</sub>Sc<sub>x</sub>N Thin Films.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400279
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- Article
Ultrafast Decay of Interlayer Exciton in WS<sub>2</sub>/MoSe<sub>2</sub> Heterostructure Under Pressure.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400333
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- Article
Single‐Cell Membrane Potential Stimulation and Recording by an Electrolyte‐Gated Organic Field‐Effect Transistor.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400134
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- Article
All‐Solution‐Processed, All‐Organic Flexible Transistor and Circuit Based on Dry‐Transfer Polymer Films.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400317
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- Article
Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400318
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- Article
Tuning the Resistance of a VO<sub>2</sub> Junction by Focused Laser Beam and Atomic Force Microscopy.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400249
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- Article
Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe<sub>2</sub> Heterostructure.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400268
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- Article
Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400324
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- Article
Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400328
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- Article
Exploring the Optoelectronic and Photovoltaic Characteristics of Lead‐Free Cs<sub>2</sub>TiBr<sub>6</sub> Double Perovskite Solar Cells: A DFT and SCAPS‐1D Investigations.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400348
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- Article
Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400282
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- Article
Spin Current Generation at the Hybrid Ferromagnetic Metal/Organic Semiconductor Interface as Revealed by Multiple Magnetic Resonance Techniques.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400322
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- Article
Anomalous Magnetoelectric Coupling in the Paramagnetic State of a Chiral and Polar Magnet.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400308
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- Article
Purely Electric‐Driven Field‐Free Magnetization Switching in L1<sub>0</sub>‐FePt Single Film for Reconfigurable Spin Logic Computing.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400270
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- Article
Self‐Selective Crossbar Synapse Array with n‐ZnO/p‐NiO<sub>x</sub>/n‐ZnO Structure for Neuromorphic Computing.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400347
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- Article
Impact of Gate Voltage on Mobility of Charge Carriers in Conductive Channel of Organic Molecular Semiconductors: Transport Landscape Assessed by Alternating and Direct Current Mode Techniques.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400304
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- Article
Size Enlargement of CsPbI<sub>3</sub> Perovskite Nanocrystals by Trioctylphosphine in the Synthesis for Highly Efficient Deep‐Red Light‐Emitting Diodes.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400334
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- Article
Angular Dependence of Hump‐Shape Hall Effects for Distinguishing between Karplus–Luttinger and Geometrical Origins.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400162
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- Article
Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400266
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- Article
Band Versus Hopping Transport in Conducting Polymers by Ab Initio Molecular Dynamics: Exploring the Effect of Electric Field, Trapping and Temperature.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400239
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- Article
Organic Multibit Phototransistor Memories with High External Quantum Efficiency.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400307
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- Article
Operando Spectroscopic Investigation of the Valence Change Mechanism in La<sub>2</sub>NiO<sub>4+δ</sub> ‐Based Memristive Devices.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400313
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- Article
Microstructural Underpinnings of Giant Intrinsic Exchange Bias in Epitaxial NiCo<sub>2</sub>O<sub>4</sub> Thin Films.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400149
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- Article
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400184
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- Article
Epitaxial Single‐Crystalline PZT Thin Films on ZrO<sub>2</sub>‐Buffered Si Wafers Fabricated Using Spin‐Coating for Mass‐Produced Memristor Devices.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400280
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- Article
Correction to "Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors".
- Published in:
- 2025
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- Publication type:
- Correction Notice
Band Alignment Engineering in 2D Ferroelectric Van der Waals Heterostructures for All‐In‐One Optoelectronic Architecture.
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400269
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- Article
MXene Inks for High‐Throughput Printing of Electronics.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400170
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- Article
Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400204
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- Article
Facile Fabrication of Melamine/MXene/FeNi‐PBA Composite Derived Multi‐Interface Magnetic Carbon Foam for High‐Efficiency Microwave Absorption.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400265
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- Article
Multilayer Metamaterials with Ferromagnetic Domains Separated by Antiferromagnetic Domain Walls.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400251
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- Article
Issue Information.
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202570006
- Publication type:
- Article
Magnetic Field Screening of 2D Materials Revealed by Magnetic Force Microscopy (Adv. Electron. Mater. 2/2025).
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202570005
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- Publication type:
- Article
Phase‐Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025).
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202570004
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- Article
GeTe/Sb<sub>2</sub>Te<sub>3</sub> Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400290
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- Article
Electro‐Optical InGaZnO Synaptic Transistor with Solid State Electrolyte for Pain Perception.
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400356
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- Article
A Self‐Organizing Map Spiking Neural Network Based on Tin Oxide Memristive Synapses and Neurons.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400421
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- Article
Enhancing Recoverable Bendability of Ag<sub>2</sub>Te‐Based Thermoelectrics by Elastic Strain Manipulation.
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400728
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- Article
Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400338
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- Article
High Power Density Micro Thermoelectric Generators for Powering IoTs.
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- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400198
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- Article
Phase‐Coherent Transport in GeSn Alloys on Si.
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 2, p. 1, doi. 10.1002/aelm.202400565
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- Article