Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 1

Results: 22

Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300550

By:

Zhang, Kaitian;
Vangipuram, Vijay Gopal Thirupakuzi;
Huang, Hsien‐Lien;
Hwang, Jinwoo;
Zhao, Hongping

Publication type:

Article

In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400046

By:

Tang, Xiao;
Zhao, Yue;
Li, Kuang‐Hui;
Liu, Chen;
Faber, Hendrik;
Babatain, Wedyan;
Liao, Che‐Hao;
Yuvaraja, Saravanan;
Khandelwal, Vishal;
Chettri, Dhanu;
Cao, Haicheng;
Lu, Yi;
Wang, Chuanju;
Anthopoulos, Thomas D.;
Zhang, Xixiang;
Li, Xiaohang

Publication type:

Article

Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300840

By:

Lang, Jing;
Xu, Fujun;
Wang, Jiaming;
Zhang, Lisheng;
Fang, Xuzhou;
Zhang, Ziyao;
Guo, Xueqi;
Ji, Chen;
Ji, Chengzhi;
Tan, Fuyun;
Wu, Yong;
Yang, Xuelin;
Kang, Xiangning;
Qin, Zhixin;
Tang, Ning;
Wang, Xinqiang;
Ge, Weikun;
Shen, Bo

Publication type:

Article

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400342

By:

Chou, Ta‐Shun;
Tran, Thi Thuy Vi;
Peelaers, Hartwin;
Tetzner, Kornelius;
Hilt, Oliver;
Rehm, Jana;
Bin Anooz, Saud;
Fiedler, Andreas;
Galazka, Zbigniew;
Albrecht, Martin;
Popp, Andreas

Publication type:

Article

Semiconductor Membrane Exfoliation: Technology and Application.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300832

By:

Chang, Hongliang;
Jia, Yanqing;
Park, Tae‐Yong;
Zhang, Xu;
Gan, Qiaoqiang;
Ma, Zhenqiang;
Ng, Tien Khee;
Ooi, Boon S.

Publication type:

Article

Electronic Properties of Ultra‐Wide Bandgap BxAl1−xN Computed from First‐Principles Simulations.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400549

By:

Milne, Cody L.;
Biswas, Tathagata;
Singh, Arunima K.

Publication type:

Article

Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga2O3.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400315

By:

Wang, Zhengpeng;
Tang, Fei;
Ren, Fang‐Fang;
Liang, Hongwei;
Cui, Xiangyuan;
Xu, Shijie;
Gu, Shulin;
Zhang, Rong;
Zheng, Youdou;
Ye, Jiandong

Publication type:

Article

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400146

By:

Malakoutian, Mohamadali;
Woo, Kelly;
Rich, Dennis;
Mandia, Ramandeep;
Zheng, Xiang;
Kasperovich, Anna;
Saraswat, Devansh;
Soman, Rohith;
Jo, Youhwan;
Pfeifer, Thomas;
Hwang, Taesoon;
Aller, Henry;
Kim, Jeongkyu;
Lyu, Junrui;
Mabrey, Janelle Keionna;
Rodriguez, Thomas Andres;
Pomeroy, James;
Hopkins, Patrick E.;
Graham, Samuel;
Smith, David J.

Publication type:

Article

Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400247

By:

Yang, Jianyu;
Tian, Kangkai;
Chu, Chunshuang;
Zhang, Yonghui;
Jiang, Ke;
Sun, Xiaojuan;
Li, Dabing;
Sun, Xiao Wei;
Zhang, Zi‐Hui

Publication type:

Article

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400069

By:

Bassaler, Julien;
Mehta, Jash;
Abid, Idriss;
Konczewicz, Leszek;
Juillaguet, Sandrine;
Contreras, Sylvie;
Rennesson, Stéphanie;
Tamariz, Sebastian;
Nemoz, Maud;
Semond, Fabrice;
Pernot, Julien;
Medjdoub, Farid;
Cordier, Yvon;
Ferrandis, Philippe

Publication type:

Article

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300844

By:

Sun, Sihan;
Wang, Chenlu;
Alghamdi, Sami;
Zhou, Hong;
Hao, Yue;
Zhang, Jincheng

Publication type:

Article

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300662

By:

Ma, Yunwei;
Qin, Yuan;
Porter, Matthew;
Spencer, Joseph;
Du, Zhonghao;
Xiao, Ming;
Wang, Boyan;
Wang, Yifan;
Jacobs, Alan G.;
Wang, Han;
Tadjer, Marko;
Zhang, Yuhao

Publication type:

Article

Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300428

By:

Seyidov, Palvan;
Varley, Joel B.;
Frodason, Ymir Kalmann;
Klimm, Detlef;
Vines, Lasse;
Galazka, Zbigniew;
Chou, Ta‐Shun;
Popp, Andreas;
Irmscher, Klaus;
Fiedler, Andreas

Publication type:

Article

Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials.

Published in:: Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400958
Publication type:: Article

Progresses and Frontiers in Ultrawide Bandgap Semiconductors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400934

By:

Rajan, Siddharth;
Li, Xiaohang

Publication type:

Article

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300679

By:

Tarntair, Fu‐Gow;
Huang, Chih‐Yang;
Rana, Siddharth;
Lin, Kun‐Lin;
Hsu, Shao‐Hui;
Kao, Yu‐Cheng;
Pratap, Singh Jitendra;
Chen, Yi‐Che;
Tumilty, Niall;
Liu, Po‐Liang;
Horng, Ray‐Hua

Publication type:

Article

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202570001

By:

Ma, Yunwei;
Qin, Yuan;
Porter, Matthew;
Spencer, Joseph;
Du, Zhonghao;
Xiao, Ming;
Wang, Boyan;
Wang, Yifan;
Jacobs, Alan G.;
Wang, Han;
Tadjer, Marko;
Zhang, Yuhao

Publication type:

Article

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400547

By:

Zha, Xian‐Hu;
Wan, Yu‐Xi;
Li, Shuang;
Zhang, Dao Hua

Publication type:

Article

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025).

Published in:

2025

By:

Zha, Xian‐Hu;
Wan, Yu‐Xi;
Li, Shuang;
Zhang, Dao Hua

Publication type:

Abstract

Issue Information.

Published in:: Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202570003
Publication type:: Article

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400552

By:

Wriedt, Nathan;
Meng, Lingyu;
Yu, Dong Su;
Chae, Chris;
Liddy, Kyle;
Dheenan, Ashok;
Dhara, Sushovan;
Myers, Roberto C.;
Maksimov, Oleg;
Blakeley, Richard;
Krishna, Sanjay;
Hwang, Jinwoo;
Zhao, Hongping;
McGlone, Joe;
Rajan, Siddharth

Publication type:

Article

Machine Learning Enabled High‐Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400435

By:

Chen, Chi;
Wang, Hao;
Wan, Houzhao;
Sun, Dan

Publication type:

Article

Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 1

Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa<sub>5</sub>O<sub>8</sub>.

In Situ Growth of (−201) Fiber‐Textured β‐Ga<sub>2</sub>O<sub>3</sub> Semiconductor Tape for Flexible Thin‐Film Transistor.

Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes.

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga<sub>2</sub>O<sub>3</sub> Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices.

Semiconductor Membrane Exfoliation: Technology and Application.

Electronic Properties of Ultra‐Wide Bandgap B<sub>x</sub>Al<sub>1−x</sub>N Computed from First‐Principles Simulations.

Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga<sub>2</sub>O<sub>3</sub>.

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces.

Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes.

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility.

Recent Advanced Ultra‐Wide Bandgap β‐Ga<sub>2</sub>O<sub>3</sub> Material and Device Technologies.

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices.

Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga<sub>2</sub>O<sub>3</sub> Crystals.

Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials.

Progresses and Frontiers in Ultrawide Bandgap Semiconductors.

Material Properties of n‐Type β‐Ga<sub>2</sub>O<sub>3</sub> Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition.

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025).

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors.

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025).

Issue Information.

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO<sub>3</sub>/β‐Ga<sub>2</sub>O<sub>3</sub> Solar‐Blind Photodetectors.

Machine Learning Enabled High‐Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials.