Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 1

Results: 22

Electronic Properties of Ultra‐Wide Bandgap BxAl1−xN Computed from First‐Principles Simulations.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400549
By:
- Milne, Cody L.;
- Biswas, Tathagata;
- Singh, Arunima K.
Publication type:
Article
Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400342
By:
- Chou, Ta‐Shun;
- Tran, Thi Thuy Vi;
- Peelaers, Hartwin;
- Tetzner, Kornelius;
- Hilt, Oliver;
- Rehm, Jana;
- Bin Anooz, Saud;
- Fiedler, Andreas;
- Galazka, Zbigniew;
- Albrecht, Martin;
- Popp, Andreas
Publication type:
Article
Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga2O3.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400315
By:
- Wang, Zhengpeng;
- Tang, Fei;
- Ren, Fang‐Fang;
- Liang, Hongwei;
- Cui, Xiangyuan;
- Xu, Shijie;
- Gu, Shulin;
- Zhang, Rong;
- Zheng, Youdou;
- Ye, Jiandong
Publication type:
Article
Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400247
By:
- Yang, Jianyu;
- Tian, Kangkai;
- Chu, Chunshuang;
- Zhang, Yonghui;
- Jiang, Ke;
- Sun, Xiaojuan;
- Li, Dabing;
- Sun, Xiao Wei;
- Zhang, Zi‐Hui
Publication type:
Article
Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400146
By:
- Malakoutian, Mohamadali;
- Woo, Kelly;
- Rich, Dennis;
- Mandia, Ramandeep;
- Zheng, Xiang;
- Kasperovich, Anna;
- Saraswat, Devansh;
- Soman, Rohith;
- Jo, Youhwan;
- Pfeifer, Thomas;
- Hwang, Taesoon;
- Aller, Henry;
- Kim, Jeongkyu;
- Lyu, Junrui;
- Mabrey, Janelle Keionna;
- Rodriguez, Thomas Andres;
- Pomeroy, James;
- Hopkins, Patrick E.;
- Graham, Samuel;
- Smith, David J.
Publication type:
Article
Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400069
By:
- Bassaler, Julien;
- Mehta, Jash;
- Abid, Idriss;
- Konczewicz, Leszek;
- Juillaguet, Sandrine;
- Contreras, Sylvie;
- Rennesson, Stéphanie;
- Tamariz, Sebastian;
- Nemoz, Maud;
- Semond, Fabrice;
- Pernot, Julien;
- Medjdoub, Farid;
- Cordier, Yvon;
- Ferrandis, Philippe
Publication type:
Article
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300844
By:
- Sun, Sihan;
- Wang, Chenlu;
- Alghamdi, Sami;
- Zhou, Hong;
- Hao, Yue;
- Zhang, Jincheng
Publication type:
Article
In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400046
By:
- Tang, Xiao;
- Zhao, Yue;
- Li, Kuang‐Hui;
- Liu, Chen;
- Faber, Hendrik;
- Babatain, Wedyan;
- Liao, Che‐Hao;
- Yuvaraja, Saravanan;
- Khandelwal, Vishal;
- Chettri, Dhanu;
- Cao, Haicheng;
- Lu, Yi;
- Wang, Chuanju;
- Anthopoulos, Thomas D.;
- Zhang, Xixiang;
- Li, Xiaohang
Publication type:
Article
Semiconductor Membrane Exfoliation: Technology and Application.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300832
By:
- Chang, Hongliang;
- Jia, Yanqing;
- Park, Tae‐Yong;
- Zhang, Xu;
- Gan, Qiaoqiang;
- Ma, Zhenqiang;
- Ng, Tien Khee;
- Ooi, Boon S.
Publication type:
Article
Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300840
By:
- Lang, Jing;
- Xu, Fujun;
- Wang, Jiaming;
- Zhang, Lisheng;
- Fang, Xuzhou;
- Zhang, Ziyao;
- Guo, Xueqi;
- Ji, Chen;
- Ji, Chengzhi;
- Tan, Fuyun;
- Wu, Yong;
- Yang, Xuelin;
- Kang, Xiangning;
- Qin, Zhixin;
- Tang, Ning;
- Wang, Xinqiang;
- Ge, Weikun;
- Shen, Bo
Publication type:
Article
Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300679
By:
- Tarntair, Fu‐Gow;
- Huang, Chih‐Yang;
- Rana, Siddharth;
- Lin, Kun‐Lin;
- Hsu, Shao‐Hui;
- Kao, Yu‐Cheng;
- Pratap, Singh Jitendra;
- Chen, Yi‐Che;
- Tumilty, Niall;
- Liu, Po‐Liang;
- Horng, Ray‐Hua
Publication type:
Article
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300662
By:
- Ma, Yunwei;
- Qin, Yuan;
- Porter, Matthew;
- Spencer, Joseph;
- Du, Zhonghao;
- Xiao, Ming;
- Wang, Boyan;
- Wang, Yifan;
- Jacobs, Alan G.;
- Wang, Han;
- Tadjer, Marko;
- Zhang, Yuhao
Publication type:
Article
Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300428
By:
- Seyidov, Palvan;
- Varley, Joel B.;
- Frodason, Ymir Kalmann;
- Klimm, Detlef;
- Vines, Lasse;
- Galazka, Zbigniew;
- Chou, Ta‐Shun;
- Popp, Andreas;
- Irmscher, Klaus;
- Fiedler, Andreas
Publication type:
Article
Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202300550
By:
- Zhang, Kaitian;
- Vangipuram, Vijay Gopal Thirupakuzi;
- Huang, Hsien‐Lien;
- Hwang, Jinwoo;
- Zhao, Hongping
Publication type:
Article
Issue Information.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202570003
Publication type:
Article
Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025).
Published in:
2025
By:
- Zha, Xian‐Hu;
- Wan, Yu‐Xi;
- Li, Shuang;
- Zhang, Dao Hua
Publication type:
Abstract
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025).
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202570001
By:
- Ma, Yunwei;
- Qin, Yuan;
- Porter, Matthew;
- Spencer, Joseph;
- Du, Zhonghao;
- Xiao, Ming;
- Wang, Boyan;
- Wang, Yifan;
- Jacobs, Alan G.;
- Wang, Han;
- Tadjer, Marko;
- Zhang, Yuhao
Publication type:
Article
Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400547
By:
- Zha, Xian‐Hu;
- Wan, Yu‐Xi;
- Li, Shuang;
- Zhang, Dao Hua
Publication type:
Article
Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400958
Publication type:
Article
Progresses and Frontiers in Ultrawide Bandgap Semiconductors.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400934
By:
- Rajan, Siddharth;
- Li, Xiaohang
Publication type:
Article
Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400552
By:
- Wriedt, Nathan;
- Meng, Lingyu;
- Yu, Dong Su;
- Chae, Chris;
- Liddy, Kyle;
- Dheenan, Ashok;
- Dhara, Sushovan;
- Myers, Roberto C.;
- Maksimov, Oleg;
- Blakeley, Richard;
- Krishna, Sanjay;
- Hwang, Jinwoo;
- Zhao, Hongping;
- McGlone, Joe;
- Rajan, Siddharth
Publication type:
Article
Machine Learning Enabled High‐Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials.
Published in:
Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400435
By:
- Chen, Chi;
- Wang, Hao;
- Wan, Houzhao;
- Sun, Dan
Publication type:
Article

Works matching IS 2199160X AND DT 2025 AND VI 11 AND IP 1

Electronic Properties of Ultra‐Wide Bandgap B<sub>x</sub>Al<sub>1−x</sub>N Computed from First‐Principles Simulations.

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga<sub>2</sub>O<sub>3</sub> Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices.

Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga<sub>2</sub>O<sub>3</sub>.

Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes.

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces.

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility.

Recent Advanced Ultra‐Wide Bandgap β‐Ga<sub>2</sub>O<sub>3</sub> Material and Device Technologies.

In Situ Growth of (−201) Fiber‐Textured β‐Ga<sub>2</sub>O<sub>3</sub> Semiconductor Tape for Flexible Thin‐Film Transistor.

Semiconductor Membrane Exfoliation: Technology and Application.

Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes.

Material Properties of n‐Type β‐Ga<sub>2</sub>O<sub>3</sub> Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition.

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices.

Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga<sub>2</sub>O<sub>3</sub> Crystals.

Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa<sub>5</sub>O<sub>8</sub>.

Issue Information.

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025).

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025).

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors.

Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials.

Progresses and Frontiers in Ultrawide Bandgap Semiconductors.

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO<sub>3</sub>/β‐Ga<sub>2</sub>O<sub>3</sub> Solar‐Blind Photodetectors.

Machine Learning Enabled High‐Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials.