Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 9

Results: 32

Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202300811

By:

Myronov, Maksym;
Jahandar, Pedram;
Rossi, Simone;
Sewell, Kevin;
Murphy‐Armando, Felipe;
Pezzoli, Fabio

Publication type:

Article

Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202300909

By:

Ma, Xingzhao;
Tang, Libin;
Jia, Menghan;
Zhang, Yuping;
Zuo, Wenbin;
Cai, Yuhua;
Li, Rui;
Yang, Liqing;
Teng, Kar Seng

Publication type:

Article

Ferroelectric Polarization Dependent Piezoelectric Hardening in BiFeO3‐BaTiO3 Lead‐Free Ceramics.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202300902

By:

Lee, Myang Hwan;
Choi, Hae In;
Kim, Da Jeong;
Kim, Ji Su;
Lee, Sang Woo;
Park, Yubin;
Yang, Sang Mo;
Song, Tae Kwon

Publication type:

Article

Insights into a Defective Potassium Sulfido Cobaltate: Giant Magnetic Exchange Bias, Ionic Conductivity, and Electrical Permittivity.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400038

By:

Ghazanfari, M. Reza;
Steinberg, Simon;
Siemensmeyer, Konrad;
Vrijmoed, Johannes C.;
Tallu, Mirko;
Dehnen, Stefanie;
Thiele, Günther

Publication type:

Article

Solving the Annealing of Mo Interconnects for Next‐Gen Integrated Circuits.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400035

By:

Erofeev, Ivan;
Hartanto, Antony Winata;
Saidov, Khakimjon;
Aabdin, Zainul;
Pacco, Antoine;
Philipsen, Harold;
Tjiu, Weng Weei;
Hui, Hui Kim;
Holsteyns, Frank;
Mirsaidov, Utkur

Publication type:

Article

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202300877

By:

Zhang, Zimeng;
Craig, Isaac;
Zhou, Tao;
Holt, Martin;
Flores, Raul;
Sheridan, Evan;
Inzani, Katherine;
Huang, Xiaoxi;
Nag, Joyeeta;
Prasad, Bhagwati;
Griffin, Sinéad M.;
Ramesh, Ramamoorthy

Publication type:

Article

Phase Separation‐Induced Electrical Conductivity for Liquid Metal‐Embedded Plastic Hybrid Composites with Metallic Conductivity and Recyclability.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400003

By:

Xin, Yumeng;
Cheng, Yi;
Sun, Lianhao;
Ren, Haidong;
Mao, Xiyue;
Yu, Ping;
Ban, Xinxin;
Lou, Yang

Publication type:

Article

Quantum‐Dot‐Induced Energy Filtering Effect in Organic Thermoelectric Nanocomposites.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202300814

By:

Kim, Daegun;
Kim, Jimin;
Chung, Sein;
Cho, Kilwon

Publication type:

Article

Modeling, Parameters and Synaptic Plasticity Analysis of Lateral‐Ionic‐Gated Graphene Synaptic FETs.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400047

By:

He, Xiaoying;
Cao, Bowen;
Xu, Minghao;
Wang, Kun;
Rao, Lan

Publication type:

Article

Performance Enhancement of Tricalcium Phosphate Film for Bioelectronics with Bio‐Friendly Supercritical Fluids Desorption Technology.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400066

By:

Peng, Zehui;
Wang, Mingqiang;
Li, Lei;
Duan, Xinqing;
Liu, Huangbai;
Wang, Mingge;
Wang, Jie;
Chang, Chang‐Kuan

Publication type:

Article

A Study on h‐BN Resistive Switching Temporal Response.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400022

By:

Musisi‐Nkambwe, Mirembe;
Afshari, Sahra;
Xie, Jing;
Warner, Hailey;
Sanchez Esqueda, Ivan

Publication type:

Article

Defect‐Driven Light Perception and Memristor Storage with Phase Transition in Vanadium Dioxide.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400006

By:

Niu, Linkui;
Xu, Peiran;
Huang, Tiantian;
Yang, Wanli;
Chen, Zhimin;
Chen, Xin;
Dai, Ning

Publication type:

Article

Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400061

By:

Shin, Yunwoo;
Jeon, Juhee;
Cho, Kyoungah;
Kim, Sangsig

Publication type:

Article

Controllable Electrical Properties of ZrO2/BiFeO3 Bilayer Memristor from Synaptic Mimic to TRNG Circuit Application by Modulating Compliance Currents.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400072

By:

Jin, Yaoyao;
Zhu, Ming;
Zhou, Yuhong;
Zhang, Zihao;
Wang, Jinzhao;
Song, Xingjuan;
Meng, Jiahao;
Ke, Shanwu;
Zhang, Tianyi;
Chen, Siqi;
Li, Ruiqi;
Jiang, Bei;
Ye, Cong

Publication type:

Article

Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400067

By:

Pérez‐Martínez, José Carlos;
Martín‐Martín, Diego;
Arredondo, Belén;
Romero, Beatriz

Publication type:

Article

Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400037

By:

Fekri, Zahra;
Chava, Phanish;
Hlawacek, Gregor;
Ghorbani‐Asl, Mahdi;
Kretschmer, Silvan;
Awan, Wajid;
Mootheri, Vivek;
Venanzi, Tommaso;
Sycheva, Natalia;
George, Antony;
Turchanin, Andrey;
Watanabe, Kenji;
Taniguchi, Takashi;
Helm, Manfred;
Krasheninnikov, Arkady V.;
Erbe, Artur

Publication type:

Article

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400021

By:

Orejuela, V.;
García‐Tabares, E.;
Rey‐Stolle, I.;
García, I.

Publication type:

Article

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400071

By:

Ali, Fida;
Choi, Hyungyu;
Ali, Nasir;
Hassan, Yasir;
Ngo, Tien Dat;
Ahmed, Faisal;
Park, Won‐Kyu;
Sun, Zhipei;
Yoo, Won Jong

Publication type:

Article

Stretching, Tapping, or Compressing–What Role Does Triboelectricity Play in the Signal Output from Piezoelectric Nanogenerators?

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400019

By:

Akbarinejad, Alireza;
Fiedler, Holger;
Nguyen, Jade;
Li, Zifan;
Gito, Donn Adam;
Sherrell, Peter C.;
Ellis, Amanda V.;
Aw, Kean;
Malmstrom, Jenny

Publication type:

Article

Aligned Permanent Magnet Made in Seconds–An In Situ Diffraction Study.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400077

By:

Laursen, Amalie P.;
Frandsen, Jens P.;
Shyam, Priyank;
Mørch, Mathias I.;
Gjørup, Frederik H.;
Vijayan, Harikrishnan;
Jørgensen, Mads R. V.;
Christensen, Mogens

Publication type:

Article

Memorizable Electro‐Birefringence Effect Exhibited by Transparent Liquid Crystal/Polymer Composite Materials.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400055

By:

Yamaguchi, Masaki;
Okumura, Yasushi;
Nishikawa, Hiroya;
Matsukizono, Hiroyuki;
Kikuchi, Hirotsugu

Publication type:

Article

Intrinsically Stretchable Polymer Semiconductor with Regional Conjugation for Stretchable Electronics.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202300816

By:

Wang, Sichun;
Wang, Liangjie;
Ren, Shiwei;
Li, Wenhao;
Wang, Zhihui;
Yi, Zhengran;
Liu, Yunqi

Publication type:

Article

Pressure‐Dependent "Insulator–Metal–Insulator" Behavior in Sr‐Doped La3Ni2O7.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400078

By:

Xu, Mingyu;
Huyan, Shuyuan;
Wang, Haozhe;
Bud'ko, Sergey L.;
Chen, Xinglong;
Ke, Xianglin;
Mitchell, John F.;
Canfield, Paul C.;
Li, Jie;
Xie, Weiwei

Publication type:

Article

Polymer Passivated All Inorganic Micro‐Structured CsPbIxBry Perovskite Toward Highly Efficient Photodetectors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400042

By:

Shah, Shruti;
Punde, Ashvini;
Kale, Dhanashri;
Hase, Yogesh;
Ladhane, Somnath;
Rahane, Swati;
Doiphode, Vidya;
Shinde, Pratibha;
Waghmare, Ashish;
Bade, Bharat;
Rondiya, Sachin;
Prasad, Mohit;
Patole, Shashikant P.;
Jadkar, Sandesh

Publication type:

Article

High‐Performance Thermoelectric and Electromagnetic Interference Shielding Derived from MXene/Ag2Se Nanowire Composite Film.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400018

By:

Park, Dabin;
Kim, Minsu;
Kim, Jooheon

Publication type:

Article

Ti3C2Tx Electromagnetic Shielding Performance: Investigating Environmental Influences and Structural Changes.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400024

By:

Barjola, Arturo;
Herráiz, Roberto;
Amaro, Andrea;
Torres, José;
Suárez, Adrián;
Giménez, Enrique

Publication type:

Article

Wafer‐Scale CMOS‐Compatible Electro‐Thermally Actuated Nanomechanical Non‐Volatile Switch with Out‐of‐Plane Electrode Configuration.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400045

By:

Lee, Yong‐Bok;
Choi, Pan‐Kyu;
Kang, Min‐Ho;
Kim, Su‐Hyun;
Lee, Seung‐Jun;
Kim, Tae‐Soo;
Lee, So‐Young;
Yoon, Jun‐Bo

Publication type:

Article

Programmable Racetrack for Magnetic Domain Wall Motion via Local Tuning of Exchange Biased Field.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400027

By:

Kim, Hyun‐Joong;
Moon, Kyoung‐Woong;
Yoon, Seongsoo;
An, Kyongmo;
Kim, Changsoo;
Yang, Seungmo;
Ju, Tae‐Seong;
Son, Jong Wan;
Hong, Jung‐Il;
Hwang, Chanyong

Publication type:

Article

All van der Waals Three‐Terminal SOT‐MRAM Realized by Topological Ferromagnet Fe3GeTe2.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400041

By:

Cui, Jingyuan;
Zhang, Kai‐Xuan;
Park, Je‐Geun

Publication type:

Article

High‐Entropy La‐(Bi0.2Na0.2Ba0.2Sr0.2Ca0.2)TiO3 Ceramic with Ultrastable Dielectric Performance within 327–689 K and up to 7 GPa.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400028

By:

Wu, Jie;
Guo, Jian;
Ren, Yifeng;
Yang, Yanping;
Zhang, Ziyou;
Dong, Hongliang;
Zhang, Shan‐Tao;
Chen, Zhiqiang;
Deng, Yu

Publication type:

Article

Masthead: (Adv. Electron. Mater. 9/2024).

Published in:: Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202470031
Publication type:: Article

Intrinsically Stretchable Polymer Semiconductor with Regional Conjugation for Stretchable Electronics (Adv. Electron. Mater. 9/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202470030

By:

Wang, Sichun;
Wang, Liangjie;
Ren, Shiwei;
Li, Wenhao;
Wang, Zhihui;
Yi, Zhengran;
Liu, Yunqi

Publication type:

Article

Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 9

Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature.

Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si.

Ferroelectric Polarization Dependent Piezoelectric Hardening in BiFeO<sub>3</sub>‐BaTiO<sub>3</sub> Lead‐Free Ceramics.

Insights into a Defective Potassium Sulfido Cobaltate: Giant Magnetic Exchange Bias, Ionic Conductivity, and Electrical Permittivity.

Solving the Annealing of Mo Interconnects for Next‐Gen Integrated Circuits.

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Fatigue.

Phase Separation‐Induced Electrical Conductivity for Liquid Metal‐Embedded Plastic Hybrid Composites with Metallic Conductivity and Recyclability.

Quantum‐Dot‐Induced Energy Filtering Effect in Organic Thermoelectric Nanocomposites.

Modeling, Parameters and Synaptic Plasticity Analysis of Lateral‐Ionic‐Gated Graphene Synaptic FETs.

Performance Enhancement of Tricalcium Phosphate Film for Bioelectronics with Bio‐Friendly Supercritical Fluids Desorption Technology.

A Study on h‐BN Resistive Switching Temporal Response.

Defect‐Driven Light Perception and Memristor Storage with Phase Transition in Vanadium Dioxide.

Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing.

Controllable Electrical Properties of ZrO<sub>2</sub>/BiFeO<sub>3</sub> Bilayer Memristor from Synaptic Mimic to TRNG Circuit Application by Modulating Compliance Currents.

Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor.

Tuning the Electronic Characteristics of Monolayer MoS<sub>2</sub>‐Based Transistors by Ion Irradiation: The Role of the Substrate.

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures.

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe<sub>2</sub> Field‐Effect Transistors.

Stretching, Tapping, or Compressing–What Role Does Triboelectricity Play in the Signal Output from Piezoelectric Nanogenerators?

Aligned Permanent Magnet Made in Seconds–An In Situ Diffraction Study.

Memorizable Electro‐Birefringence Effect Exhibited by Transparent Liquid Crystal/Polymer Composite Materials.

Intrinsically Stretchable Polymer Semiconductor with Regional Conjugation for Stretchable Electronics.

Pressure‐Dependent "Insulator–Metal–Insulator" Behavior in Sr‐Doped La<sub>3</sub>Ni<sub>2</sub>O<sub>7</sub>.

Polymer Passivated All Inorganic Micro‐Structured CsPbI<sub>x</sub>Br<sub>y</sub> Perovskite Toward Highly Efficient Photodetectors.

High‐Performance Thermoelectric and Electromagnetic Interference Shielding Derived from MXene/Ag<sub>2</sub>Se Nanowire Composite Film.

Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> Electromagnetic Shielding Performance: Investigating Environmental Influences and Structural Changes.

Wafer‐Scale CMOS‐Compatible Electro‐Thermally Actuated Nanomechanical Non‐Volatile Switch with Out‐of‐Plane Electrode Configuration.

Programmable Racetrack for Magnetic Domain Wall Motion via Local Tuning of Exchange Biased Field.

All van der Waals Three‐Terminal SOT‐MRAM Realized by Topological Ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub>.

High‐Entropy La‐(Bi<sub>0.2</sub>Na<sub>0.2</sub>Ba<sub>0.2</sub>Sr<sub>0.2</sub>Ca<sub>0.2</sub>)TiO<sub>3</sub> Ceramic with Ultrastable Dielectric Performance within 327–689 K and up to 7 GPa.

Masthead: (Adv. Electron. Mater. 9/2024).

Intrinsically Stretchable Polymer Semiconductor with Regional Conjugation for Stretchable Electronics (Adv. Electron. Mater. 9/2024).