Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 8

Results: 32

A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400008

By:

Zhu, Mingmin;
Yu, Zhendi;
Hu, Gao;
Yu, Kai;
Jiang, Yulong;
Wang, Jiawei;
Dong, Wenjing;
Guo, Jinming;
Qiu, Yang;
Yu, Guoliang;
Zhou, Hao‐Miao

Publication type:

Article

Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300842

By:

Sheng, Mingyuan;
Chang, Xi;
Mao, Xiaojun;
Gao, Yang;
Xuan, Xiaoyang;
Xie, Haifen;
Mu, Haichuan;
Niu, Yueping;
Gong, Shangqing;
Qian, Min

Publication type:

Article

Flexible Biosensors for Food Pathogen Detection.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300898

By:

Biswas, Sonatan Kumar;
Islam, Md Shariful;
Jia, Fei;
Cao, Yunteng;
Li, Yanbin;
Cao, Changyong

Publication type:

Article

Spintronic Artificial Synapses Using Voltage‐Controlled Multilevel Magnetic States.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300889

By:

Jeong, Jimin;
Jang, Yunho;
Kang, Min‐Gu;
Hwang, Seungeon;
Park, Jongsun;
Park, Byong‐Guk

Publication type:

Article

Control of Ferroelectricity in Solution‐Processed Hafnia Films Through Annealing Atmosphere.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300893

By:

Mandal, Barnik;
Valle, Nathalie;
Adib, Brahime El;
Girod, Stéphanie;
Menguelti, Kevin;
Fleming, Yves;
Grysan, Patrick;
Defay, Emmanuel;
Glinsek, Sebastjan

Publication type:

Article

Enhanced Gas Sensing Characteristics of a Polythiophene Gas Sensor Blended with UiO‐66 via Ligand Functionalization.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300901

By:

Hong, Ming;
Jo, Wooseong;
Jo, Sang‐A;
Jin, Haedam;
Kim, Min;
Lee, Chang Yeon;
Park, Yeong Don

Publication type:

Article

Ultra‐Low Power and Reliable Dynamic Memtransistor Based on Charge Storage Junction FET with Step‐Wise Potential Barrier for Energy‐Efficient Edge Computing Framework.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300904

By:

Park, Taehoon;
Seo, Seokho;
Kim, Yujin;
Park, See‐On;
Choi, Soobin;
Hong, Seokman;
Jeong, Hakcheon;
Choi, Shinhyun

Publication type:

Article

Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300900

By:

Kang, Minseung;
Cho, Ung;
Kang, Jaehyeon;
Han, Narae;
Seo, Hyeong Jun;
Yang, Jee‐Eun;
Shin, Seokyeon;
Kim, Taehyun;
Kim, Sangwook;
Jeong, Changwook;
Kim, Sangbum

Publication type:

Article

Interference Lithography‐Based Fabrication of 3D Metallic Mesostructures on Reflective Substrates using Electrodeposition‐Compatible Anti‐Reflection Coatings for Power Electronics Cooling.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300827

By:

Singhal, Gaurav;
Dewanjee, Sujan;
Bae, Gwangmin;
Ham, Youngjin;
Lohan, Danny J.;
Lan, Kai‐Wei;
Li, Jiaqi;
Gebrael, Tarek;
Joshi, Shailesh N.;
Jeon, Seokwoo;
Miljkovic, Nenad;
Braun, Paul V.

Publication type:

Article

Field‐Free Memristive Spin–Orbit Torque Switching in A1 CoPt Single Layer for Image Edge Detection.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300885

By:

Yang, Liu;
Li, Wendi;
Zuo, Chao;
Tao, Ying;
Jin, Fang;
Li, Huihui;
Tang, RuJun;
Dong, Kaifeng

Publication type:

Article

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300906

By:

Yoo, Jaewook;
Jo, Hyeun Seung;
Jeon, Seung‐Bae;
Moon, Taehwan;
Lee, Hongseung;
Lim, Seongbin;
Song, Hyeonjun;
Lee, Binhyeong;
Yoon, Soon Joo;
Kim, Soyeon;
Park, Minah;
Park, Seohyeon;
Jeong, Jo Hak;
Heo, Keun;
Lee, Yoon Kyeung;
Ye, Peide D.;
Kim, TaeWan;
Bae, Hagyoul

Publication type:

Article

Autonomously Self‐healing, Adhesive, and Stretchable Triboelectric Nanogenerator Using Multifunctional Hydrogel‐Elastomer Double Layer with a Power Management Circuit.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400013

By:

Oh, Jinseok;
Kang, Minkyong;
Park, Jae;
Kim, Tae Young;
Park, Kijun;
Seo, Jungmok

Publication type:

Article

Temperature Effect on GaN Threshold Displacement Energy Under Low‐Energy Electron Beam Irradiation.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400014

By:

Guo, Pengsheng;
Song, Chengzhen;
Wu, Yu‐Ning;
Chen, Shiyou

Publication type:

Article

Electron Donating Functional Polymer Dielectrics to Reduce the Threshold Voltage of n‐Type Organic Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300810

By:

Ronnasi, Bahar;
King, Benjamin;
Brixi, Samantha;
Swaraj, Sufal;
Niskanen, Jukka;
Lessard, Benoît H.

Publication type:

Article

Glassy Synaptic Time Dynamics in Molecular La0.7Sr0.3MnO3/Gaq3/AlOx/Co Spintronic Crossbar Devices.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300887

By:

Shumilin, Andrei;
Neha, Prakriti;
Benini, Mattia;
Rakshit, Rajib;
Singh, Manju;
Graziosi, Patrizio;
Cecchini, Raimondo;
Gnoli, Luca;
Prezioso, Mirko;
Bergenti, Ilaria;
Dediu, Valentin Alek;
Riminucci, Alberto

Publication type:

Article

Beyond von Neumann Architecture: Brain‐Inspired Artificial Neuromorphic Devices and Integrated Computing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300839

By:

Seok, Hyunho;
Lee, Dongho;
Son, Sihoon;
Choi, Hyunbin;
Kim, Gunhyoung;
Kim, Taesung

Publication type:

Article

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300890

By:

Shao, Mingyue;
Qiao, Yang;
Song, Sannian;
Ding, Xing;
Song, Zhitang;
Xue, Yuan

Publication type:

Article

Long‐ and Short‐Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO‐Based Synaptic Device for Reservoir Computing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300911

By:

Park, Hyogeun;
Ju, Dongyeol;
Mahata, Chandreswar;
Emelyanov, Andrey;
Koo, Minsuk;
Kim, Sungjun

Publication type:

Article

Advancing Energy‐Storage Performance in Freestanding Ferroelectric Thin Films: Insights from Phase‐Field Simulations.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400001

By:

Guo, Changqing;
Yang, Huayu;
Dong, Shouzhe;
Tang, Shiyu;
Wang, Jing;
Wang, Xueyun;
Huang, Houbing

Publication type:

Article

A Review of Synthesis and Novel Transport Properties of Multivalent Manganate Perovskite: Progress, Opportunities, and Challenges.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300867

By:

Feng, Shouhua;
Zhang, Yaowen;
Hou, Hongwei;
Wen, Chunxia;
Dong, Xuanchen;
Shi, Wenshu;
Lv, Ruike;
Fu, Meichun;
Liu, Junwei;
Lu, Jiajun;
Duan, Longhui;
Han, Mei;
Zheng, Beining;
Gao, Lu

Publication type:

Article

Systematic Review on Fabrication, Properties, and Applications of Advanced Materials in Wearable Photoplethysmography Sensors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300765

By:

Mathew, Jinu;
Zheng, Dingchang;
Xu, Jianwei;
Liu, Haipeng

Publication type:

Article

n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400010

By:

Kumar, Arun;
Pelella, Aniello;
Intonti, Kimberly;
Viscardi, Loredana;
Durante, Ofelia;
Giubileo, Filippo;
Romano, Paola;
Neill, Hazel;
Patil, Vilas;
Ansari, Lida;
Hurley, Paul K.;
Gity, Farzan;
Di Bartolomeo, Antonio

Publication type:

Article

Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300892

By:

Jun, Jae Hyeon;
Lee, Yongsu;
Lee, Hae‐Won;
Kim, Minjae;
Hwang, Hyeon Jun;
Lee, Byoung Hun

Publication type:

Article

Multi‐Functional Spin Photogalvanic Device Based on 2D Half‐Metallic Ferromagnets.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300884

By:

Fu, Zhentao;
Yan, Pinglan;
Li, Jin;
He, Chaoyu;
Ouyang, Tao;
Tang, Chao;
Zhong, Jianxin

Publication type:

Article

Pressure‐Induced Volumetric Negative Thermal Expansion in CoZr2 Superconductor.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300896

By:

Watanabe, Yuto;
Arima, Hiroto;
Kawaguchi‐Imada, Saori;
Kadobayashi, Hirokazu;
Oka, Kenta;
Usui, Hidetomo;
Matsumoto, Ryo;
Takano, Yoshihiko;
Kawahata, Takeshi;
Kawashima, Chizuru;
Takahashi, Hiroki;
Yamashita, Aichi;
Mizuguchi, Yoshikazu

Publication type:

Article

Multi‐Channel Wireless Communication Based on Amplitude‐Phase Reconfigurable Space‐Coding Beamforming Metasurface.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400056

By:

Xiong, Qi;
Zhang, Zuojun;
Ma, Xiaoliang;
Huang, Cheng;
Pu, Mingbo;
Luo, Jun;
Guo, Yinghui;
Wang, Yanxun;
Bai, WenLin;
Ye, Jia;
Yan, Lianshan;
Luo, Xiangang

Publication type:

Article

3D Graphene Straintronics for Broadband Terahertz Modulation.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300853

By:

Kumar, Prabhat;
Šilhavík, Martin;
Parida, Manas R.;
Kužel, Petr;
Červenka, Jiří

Publication type:

Article

Steep Slope Field Effect Transistors Based on 2D Materials.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300625

By:

Qin, Laixiang;
Tian, He;
Li, Chunlai;
Xie, Ziang;
Wei, Yiqun;
Li, Yi;
He, Jin;
Yue, Yutao;
Ren, Tian‐Ling

Publication type:

Article

Organic Mixed Ionic Electronic Conductor Nanochannels for Vertical Electrochemical and Ionic Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300762

By:

Zhang, Chenhong;
Margotti, Lorenzo;
Decataldo, Francesco;
Piccioni, Alberto;
Wang, Hongzhi;
Fraboni, Beatrice;
Li, Yaogang;
Cramer, Tobias

Publication type:

Article

Masthead: (Adv. Electron. Mater. 8/2024).

Published in:: Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202470029
Publication type:: Article

Interference Lithography‐Based Fabrication of 3D Metallic Mesostructures on Reflective Substrates using Electrodeposition‐Compatible Anti‐Reflection Coatings for Power Electronics Cooling (Adv. Electron. Mater. 8/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202470028

By:

Singhal, Gaurav;
Dewanjee, Sujan;
Bae, Gwangmin;
Ham, Youngjin;
Lohan, Danny J.;
Lan, Kai‐Wei;
Li, Jiaqi;
Gebrael, Tarek;
Joshi, Shailesh N.;
Jeon, Seokwoo;
Miljkovic, Nenad;
Braun, Paul V.

Publication type:

Article

Unraveling the Mechanism of the Light‐Triggered Synaptic Plasticity in Organic Photoelectric Synaptic Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300878

By:

Zhang, Cong;
Zhang, Mingxin;
Lin, Fengyuan;
Zhao, Guodong;
Wei, Zhipeng;
Ni, Yanping;
Li, Juntong;
Yu, Hongyan;
Zhao, Xiaoli;
Tong, Yanhong;
Tang, Qingxin;
Liu, Yichun

Publication type:

Article

Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 8

A TaO<sub>x</sub>/TiO<sub>y</sub> Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing.

Growth and Photoresponse of WS<sub>2</sub>/MoSe<sub>2</sub> Lateral Heterostructure.

Flexible Biosensors for Food Pathogen Detection.

Spintronic Artificial Synapses Using Voltage‐Controlled Multilevel Magnetic States.

Control of Ferroelectricity in Solution‐Processed Hafnia Films Through Annealing Atmosphere.

Enhanced Gas Sensing Characteristics of a Polythiophene Gas Sensor Blended with UiO‐66 via Ligand Functionalization.

Ultra‐Low Power and Reliable Dynamic Memtransistor Based on Charge Storage Junction FET with Step‐Wise Potential Barrier for Energy‐Efficient Edge Computing Framework.

Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits.

Interference Lithography‐Based Fabrication of 3D Metallic Mesostructures on Reflective Substrates using Electrodeposition‐Compatible Anti‐Reflection Coatings for Power Electronics Cooling.

Field‐Free Memristive Spin–Orbit Torque Switching in A1 CoPt Single Layer for Image Edge Detection.

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source.

Autonomously Self‐healing, Adhesive, and Stretchable Triboelectric Nanogenerator Using Multifunctional Hydrogel‐Elastomer Double Layer with a Power Management Circuit.

Temperature Effect on GaN Threshold Displacement Energy Under Low‐Energy Electron Beam Irradiation.

Electron Donating Functional Polymer Dielectrics to Reduce the Threshold Voltage of n‐Type Organic Thin‐Film Transistors.

Glassy Synaptic Time Dynamics in Molecular La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/Gaq<sub>3</sub>/AlO<sub>x</sub>/Co Spintronic Crossbar Devices.

Beyond von Neumann Architecture: Brain‐Inspired Artificial Neuromorphic Devices and Integrated Computing.

Tuning Thermal Stability and Power Consumption of Sb<sub>2</sub>Te<sub>3</sub> Phase Change Memory with Metallic Elements.

Long‐ and Short‐Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO‐Based Synaptic Device for Reservoir Computing.

Advancing Energy‐Storage Performance in Freestanding Ferroelectric Thin Films: Insights from Phase‐Field Simulations.

A Review of Synthesis and Novel Transport Properties of Multivalent Manganate Perovskite: Progress, Opportunities, and Challenges.

Systematic Review on Fabrication, Properties, and Applications of Advanced Materials in Wearable Photoplethysmography Sensors.

n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory.

Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices.

Multi‐Functional Spin Photogalvanic Device Based on 2D Half‐Metallic Ferromagnets.

Pressure‐Induced Volumetric Negative Thermal Expansion in CoZr<sub>2</sub> Superconductor.

Multi‐Channel Wireless Communication Based on Amplitude‐Phase Reconfigurable Space‐Coding Beamforming Metasurface.

3D Graphene Straintronics for Broadband Terahertz Modulation.

Steep Slope Field Effect Transistors Based on 2D Materials.

Organic Mixed Ionic Electronic Conductor Nanochannels for Vertical Electrochemical and Ionic Transistors.

Masthead: (Adv. Electron. Mater. 8/2024).

Interference Lithography‐Based Fabrication of 3D Metallic Mesostructures on Reflective Substrates using Electrodeposition‐Compatible Anti‐Reflection Coatings for Power Electronics Cooling (Adv. Electron. Mater. 8/2024).

Unraveling the Mechanism of the Light‐Triggered Synaptic Plasticity in Organic Photoelectric Synaptic Transistors.