Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 6
Results: 30
Stabilizing Phosphorene‐Like Group IV–VI Compounds via van der Waals Imprinting for Multistate Ferroelectricity and Tunable Spin Transport.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300822
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- Article
Universal Synaptic Plasticity of Interface‐Based Second‐Order Memristors.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300803
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- Article
Specific and Label‐Free bioFET Sensing of the Interaction Between the Electrically Neutral Small Estriol Molecule and Its Antibody in a Microliter Drop of Diluted Plasma.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300819
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- Article
Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300785
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- Article
Understanding the Inherent Properties of Vapor Phase Poly (3,4 – Ethylenedioxythiophene) Deposited Stretchable Conducting Films.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300602
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- Article
Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD‐Grown Monolayer MoS<sub>2</sub> Transistors.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300820
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- Article
Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300806
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- Article
Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300764
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- Article
Atomic‐Scale Study of Dead Layers in Epitaxial Perovskite Dielectric Thin Films with Oxide and Metal Top Electrodes.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300773
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- Article
Transferrable Alumina Membranes as High‐Performance Dielectric for Flexible 2D Materials Devices.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300783
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- Article
Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300835
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- Article
Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300798
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- Article
Efficient WO<sub>3</sub> Nanoplate Arrays Photoanode Modified by ZnO Nanosheets for Enhanced Charge Separation and Transfer to Promote Photoelectrochemical Performances.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300777
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- Article
Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300779
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- Article
The Trade‐Off between Transconductance and Speed for Vertical Organic Electrochemical Transistors.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300673
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- Article
Enhanced Thermoelectric Performance of MnTe by Decoupling of Electrical and Thermal Transports.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300809
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- Article
Unveiling the Impact of the Electrolyte's Counter Ions on Organic Electrochemical Transistor Performance.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300766
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- Article
Human Body Electrode Enabled Direct Current Triboelectric Nanogenerator for Self‐Powered Wireless Human Motion and Environment Monitoring.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300713
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- Article
Dilute Sb Doping Yields Softer p‐Type Bi<sub>2</sub>Te<sub>3</sub> Thermoelectrics.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300793
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- Article
Stochastic Spin‐Orbit‐Torque Synapse and its Application in Uncertainty Quantification.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300805
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- Article
Conduction Modulation of Solution‐Processed 2D Materials.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300799
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- Article
First‐Principles Study of the Electronic Properties of Egg Albumen Optoelectronic Artificial Synapses by Carbon Nanotube Insertion.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300631
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- Article
Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300691
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- Article
Organic Synaptic Transistors with an Ultra‐Short‐Term Weight‐Reconstruction for Processing Multiple Types of Signals.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300702
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- Article
First‐Principles Study of the Electronic Properties of Egg Albumen Optoelectronic Artificial Synapses by Carbon Nanotube Insertion (Adv. Electron. Mater. 6/2024).
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202470024
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- Article
Masthead: (Adv. Electron. Mater. 6/2024).
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202470023
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- Article
Sustainable Soft Electronics Combining Recyclable Metal Nanowire Circuits and Biodegradable Gel Film Substrates (Adv. Electron. Mater. 6/2024).
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202470022
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- Article
Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching (Adv. Electron. Mater. 6/2024).
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202470021
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- Article
Sustainable Soft Electronics Combining Recyclable Metal Nanowire Circuits and Biodegradable Gel Film Substrates.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300792
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- Article
Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300562
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- Article