Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 5

Results: 28

The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300752

By:

Ren, Xue;
Liu, Liang;
Cui, Bin;
Cheng, Bin;
Zhao, Xiangxiang;
An, Taiyu;
Chu, Ruiyue;
Zhang, Mingfang;
Liu, Weikang;
Zhou, Guangjun;
Kuai, Weijie;
Hu, Jifan

Publication type:

Article

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300531

By:

Okeil, Hesham;
Erlbacher, Tobias;
Wachutka, Gerhard

Publication type:

Article

Disposable and Flexible Paper‐Based Optoelectronic Synaptic Devices for Physical Reservoir Computing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300749

By:

Komatsu, Hiroaki;
Hosoda, Norika;
Kounoue, Toshiya;
Tokiwa, Kazuyasu;
Ikuno, Takashi

Publication type:

Article

Complete Selective Switching of Ferroelastic Domain Stripes in Multiferroic Thin Films by Tip Scanning.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300640

By:

Wu, Mengjun;
Wang, Xintong;
Sun, Fei;
Zhang, Xiaoyue;
Zhang, Yi;
Liu, Linjie;
Chen, Weijin;
Zheng, Yue

Publication type:

Article

Graphene‐Based Lateral Heterojunctions for 2D Integrated Circuits.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300761

By:

Haidari, Mohd.Musaib;
Jang, Dong Jin;
Yoon, Duhee;
Kim, Hakseong;
Choi, Hong Kyw;
Yi, Yoonsik;
Kim, Jin Hong;
Ko, Jin‐Yong;
Lee, Dooho;
Kee, Eun Hee;
Jeong, Hu Young;
Park, Jeong Young;
Park, Bae Ho;
Choi, Jin Sik

Publication type:

Article

An In‐Depth Investigation of the Combined Optoelectronic and Photovoltaic Properties of Lead‐Free Cs2AgBiBr6 Double Perovskite Solar Cells Using DFT and SCAPS‐1D Frameworks.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300751

By:

Uddin, M. Shihab;
Hossain, M. Khalid;
Uddin, Md Borhan;
Toki, Gazi F. I.;
Ouladsmane, Mohamed;
Rubel, Mirza H. K.;
Tishkevich, Daria I.;
Sasikumar, P.;
Haldhar, Rajesh;
Pandey, Rahul

Publication type:

Article

Perovskite Stannate Heterojunctions for Self‐Powered Ultraviolet Photodiodes Operated in Extreme Environments.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300530

By:

Yoon, Daseob;
Lee, Yujeong;
Kang, Youngho;
Son, Junwoo

Publication type:

Article

Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300449

By:

Chouprik, Anastasia;
Mikheev, Vitalii;
Margolin, Ilya;
Kalika, Elizaveta;
Spiridonov, Maxim;
Negrov, Dmitrii

Publication type:

Article

Epitaxy‐Driven Ferroelectric/Non‐Ferroelectric Polymorph Selection in an All‐Fluorite System.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300522

By:

Barriuso, Eduardo;
Jiménez, Ricardo;
Langenberg, Eric;
Koutsogiannis, Panagiotis;
Larrea, Ángel;
Varela, Manuel;
Magén, César;
Algarabel, Pedro A.;
Algueró, Miguel;
Pardo, José A.

Publication type:

Article

Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO3 Thin Films.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300744

By:

Alhada–Lahbabi, Kévin;
Deleruyelle, Damien;
Gautier, Brice

Publication type:

Article

High‐Frequency fT and fmax in Organic Transistors: Performance and Perspective.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300715

By:

Darbandy, Ghader;
Pashaki, Elahe Rastegar;
Roemer, Christian;
Bonil, Amric;
Wang, Juan;
Iniguez, Benjamin;
Kleemann, Hans;
Kloes, Alexander

Publication type:

Article

A Review on Magnetic Smart Skin as Human–Machine Interfaces.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300677

By:

Zhang, Junjie;
Chen, Guangyuan;
Jin, Zhenhu;
Chen, Jiamin

Publication type:

Article

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300698

By:

Kim, Cheol Jun;
Lee, Jae Yeob;
Ku, Minkyung;
Kim, Tae Hoon;
Noh, Taehee;
Lee, Seung Won;
Ahn, Ji‐Hoon;
Kang, Bo Soo

Publication type:

Article

Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300649

By:

Bégon‐Lours, Laura;
Slesazeck, Stefan;
Falcone, Donato Francesco;
Havel, Viktor;
Hamming‐Green, Ruben;
Fernandez, Marina Martinez;
Morabito, Elisabetta;
Mikolajick, Thomas;
Offrein, Bert Jan

Publication type:

Article

Experimental Investigation of Superconductivity in PdSSe Under High Pressure.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300707

By:

Liu, Sirui;
Zhao, Xingbin;
Song, Hao;
Lv, Xindeng;
Chen, Jiajun;
Dan, Yaqian;
Huang, Yanping;
Cui, Tian

Publication type:

Article

Electric, Optoelectronic, and Thermoelectric Properties of Moiré Superlattices of Bilayer Borophene with Different Twist Angles.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300638

By:

Song, Jizhe;
Wang, Jingang;
Yu, Jing;
Sun, Mengtao

Publication type:

Article

Blood Oxygen and Heart Rate Monitoring by A Flexible Hybrid Electronics Device Fabricated by Multilayer Screen‐Printing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300615

By:

Yoshida, Ayako;
Méhes, Gábor;
Okuyama, Yoshihiro;
Murakata, Masaki;
Shiba, Takeo;
Tokito, Shizuo

Publication type:

Article

Hybrid Printed Rigidity‐Programmable Substrate/Liquid Metal 3D Circuits Toward Stretchable Electronics.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300763

By:

Liu, Yan;
Chen, Xing;
Jin, Yuan;
Zhang, Aibing;
Zhang, Minghua;
Hua, Licheng;
Du, Jianke;
Li, Guangyong

Publication type:

Article

Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300759

By:

Nguyen, Tan Hoang Vu;
Shaikh, Mohammad Tauquir Alam Shamim;
Jeon, Ho Jung;
Vu, Thi Thanh Huong;
Prasad, Chowdam Venkata;
Labed, Madani;
Kim, Sangmo;
Rim, You Seung

Publication type:

Article

Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300504

By:

Zheng, Xu;
Wu, Lizhou;
Xie, Yuanlu;
Lai, Jinru;
Sun, Wenxuan;
Yu, Jie;
Dong, Danian;
Yu, Zhaoan;
Xue, Xiaoyong;
Chen, Bing;
Yang, Yan;
Xu, Xiaoxin;
Liu, Qi;
Liu, Ming

Publication type:

Article

Electrochemical Ionic Synapses with Mg2+ as the Working Ion.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300577

By:

Schwacke, Miranda;
Žguns, Pjotrs;
del Alamo, Jesús;
Li, Ju;
Yildiz, Bilge

Publication type:

Article

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing (Adv. Electron. Mater. 5/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202470019

By:

Kim, Cheol Jun;
Lee, Jae Yeob;
Ku, Minkyung;
Kim, Tae Hoon;
Noh, Taehee;
Lee, Seung Won;
Ahn, Ji‐Hoon;
Kang, Bo Soo

Publication type:

Article

Masthead: (Adv. Electron. Mater. 5/2024).

Published in:: Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202470020
Publication type:: Article

A Review on Magnetic Smart Skin as Human–Machine Interfaces (Adv. Electron. Mater. 5/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202470018

By:

Zhang, Junjie;
Chen, Guangyuan;
Jin, Zhenhu;
Chen, Jiamin

Publication type:

Article

A Wearable Bracelet for Simultaneous Monitoring of Transcutaneous Carbon Dioxide and Pulse Rates.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300760

By:

Cui, Yaoxuan;
Cao, Qingpeng;
Zheng, Xubin;
Dong, Hao;
Wang, Jin;
Xu, Feng;
Qian, Libin;
Wang, Di

Publication type:

Article

Real‐Time and Continuous Monitoring of Brain Deformation.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300732

By:

Liu, Ziwei;
Tang, Chengqiang;
Li, Jianzheng;
Yang, Yiqing;
Li, Wenjun;
Wang, Jiajia;
Yu, Sihui;
Wang, Chuang;
Qin, Yajie;
Tong, Qi;
Sun, Xuemei;
Peng, Huisheng

Publication type:

Article

2D Multiferroics in As‐Substituted Bilayer α‐In2Se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300642

By:

Wang, Zhikuan;
Xu, Ge;
Jiang, Xinxin;
Yang, Lei;
Gao, Quan;
Li, Chong;
Li, Dongmei;
Liu, Desheng;
Cui, Bin

Publication type:

Article

Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300475

By:

Fernandez‐Guillen, Ismael;
Aranda, Clara A.;
Betancur, Pablo F.;
Vallés‐Pelarda, Marta;
Momblona, Cristina;
Ripolles, Teresa S.;
Abargues, Rafael;
Boix, Pablo P.

Publication type:

Article

Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 5

The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage.

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes.

Disposable and Flexible Paper‐Based Optoelectronic Synaptic Devices for Physical Reservoir Computing.

Complete Selective Switching of Ferroelastic Domain Stripes in Multiferroic Thin Films by Tip Scanning.

Graphene‐Based Lateral Heterojunctions for 2D Integrated Circuits.

An In‐Depth Investigation of the Combined Optoelectronic and Photovoltaic Properties of Lead‐Free Cs<sub>2</sub>AgBiBr<sub>6</sub> Double Perovskite Solar Cells Using DFT and SCAPS‐1D Frameworks.

Perovskite Stannate Heterojunctions for Self‐Powered Ultraviolet Photodiodes Operated in Extreme Environments.

Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform.

Epitaxy‐Driven Ferroelectric/Non‐Ferroelectric Polymorph Selection in an All‐Fluorite System.

Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO<sub>3</sub> Thin Films.

High‐Frequency f<sub>T</sub> and f<sub>max</sub> in Organic Transistors: Performance and Perspective.

A Review on Magnetic Smart Skin as Human–Machine Interfaces.

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing.

Back‐End‐of‐Line Integration of Synaptic Weights using HfO<sub>2</sub>/ZrO<sub>2</sub> Nanolaminates.

Experimental Investigation of Superconductivity in PdSSe Under High Pressure.

Electric, Optoelectronic, and Thermoelectric Properties of Moiré Superlattices of Bilayer Borophene with Different Twist Angles.

Blood Oxygen and Heart Rate Monitoring by A Flexible Hybrid Electronics Device Fabricated by Multilayer Screen‐Printing.

Hybrid Printed Rigidity‐Programmable Substrate/Liquid Metal 3D Circuits Toward Stretchable Electronics.

Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications.

Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm.

Electrochemical Ionic Synapses with Mg<sup>2+</sup> as the Working Ion.

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing (Adv. Electron. Mater. 5/2024).

Masthead: (Adv. Electron. Mater. 5/2024).

A Review on Magnetic Smart Skin as Human–Machine Interfaces (Adv. Electron. Mater. 5/2024).

A Wearable Bracelet for Simultaneous Monitoring of Transcutaneous Carbon Dioxide and Pulse Rates.

Real‐Time and Continuous Monitoring of Brain Deformation.

2D Multiferroics in As‐Substituted Bilayer α‐In<sub>2</sub>Se<sub>3</sub> with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device.

Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor.