Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 3

Results: 32

Giant Change in Electrical Resistivity Induced by Moderate Pressure in Pt(bqd)2 – First Candidate Material for an Organic Piezoelectronic Transistor (OPET).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300680

By:

Afanasjevs, Sergejs;
Benjamin, Helen;
Kamenev, Konstantin;
Robertson, Neil

Publication type:

Article

LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300730

By:

Chen, Shunfeng;
Ning, Yuanjie;
Tang, Chi Sin;
Dai, Liang;
Zeng, Shengwei;
Han, Kun;
Zhou, Jun;
Yang, Ming;
Guo, Yanqun;
Cai, Chuanbing;
Ariando, Ariando;
Wee, Andrew T. S.;
Yin, Xinmao

Publication type:

Article

Fiber‐Based Flexible Ionic Diode with High Robustness and Rectifying Performance: Toward Electronic Textile Circuits.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300653

By:

Woo, Seohyun;
Kim, Hwajoong;
Kim, Jinho;
Ryu, Hyeji;
Lee, Jaehong

Publication type:

Article

Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300683

By:

Chatterjee, Arindom;
Lobato, Carlos Nunez;
Rosendal, Victor;
Anhøj, Thomas Aarøe;
Grivel, Jean‐Claude;
Trier, Felix;
Christensen, Dennis Valbjørn;
Pryds, Nini

Publication type:

Article

Inch‐Scale Freestanding Single‐Crystalline BiFeO3 Membranes for Multifunctional Flexible Electronics.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300670

By:

Qiu, Ruibin;
Peng, Bin;
Zhang, Jiaxuan;
Guo, Yunting;
Liu, Haixia;
Wang, Xianlei;
Tang, Haowen;
Dong, Guohua;
Zhao, Yanan;
Jiang, Zhuang‐De;
Liu, Ming;
Hu, Zhongqiang

Publication type:

Article

Enhancing the Response Speed of Organic Electrochemical Transistors via Ion Liquid/Metal–Organic Framework‐Embedded Semiconducting Polymers.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300645

By:

Hsu, Chao‐Hsien;
Huang, Sin‐Rong;
Lai, Jen‐Yu;
Cai, Gu‐Hao;
Tsai, Meng‐Dian;
Kung, Chung‐Wei;
Chen, Jung‐Yao

Publication type:

Article

Enhancing Self‐Powered Terahertz Photodetection with VSe2 and Van Der Waals Heterostructure Integration via Photothermoelectric Effect.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300742

By:

Jiang, Mengjie;
Pan, Xiaokai;
Zhang, Kaixuan;
Tian, Shijian;
Zhang, Libo;
Han, Li;
He, Yuan;
Lv, Xuyang;
Lan, Shiqi;
Xing, Huaizhong;
Wang, Lin

Publication type:

Article

Monolayer Mo1−x−yRexWyS2‐Based Photodetectors Grown by Chemical Vapor Deposition.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300711

By:

Liu, Xinke;
Zhou, Jie;
Jiang, Zhongwei;
Huang, Zheng;
Li, Bo;
Ma, Zhengweng;
Yang, Yongkai;
Huang, Yeying;
Zhang, Yating;
Botcha, V. Divakar;
Chung, Ren‐Jei;
Liang, Jiehao;
Li, Xiaohua;
Li, Yu;
He, Wei

Publication type:

Article

Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300722

By:

Kim, Jiwon;
Yeon, Changbong;
Cho, Deok‐Hyun;
Jung, Jaesun;
Shong, Bonggeun

Publication type:

Article

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300581

By:

Hibino, Yuki;
Yamamoto, Tatsuya;
Yakushiji, Kay;
Taniguchi, Tomohiro;
Kubota, Hitoshi;
Yuasa, Shinji

Publication type:

Article

Co‐Fired Multilayer Thermoelectric Generators Based on Textured Calcium Cobaltite.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300636

By:

Bresch, Sophie;
Stargardt, Patrick;
Moos, Ralf;
Mieller, Björn

Publication type:

Article

Parity‐Time Symmetry in Magnetic Materials and Devices.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300674

By:

Zhang, Zhitao;
Xin, Chao;
Liu, Haoliang

Publication type:

Article

Leaky Integrate‐and‐Fire Neuron Based on Organic Electrochemical Transistor for Spiking Neural Networks with Temporal‐Coding.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300565

By:

Zhu, Yuanyuan;
Wan, Xiang;
Yan, Jie;
Zhu, Li;
Li, Run;
Tan, Cheeleong;
Yu, Zhihao;
Sun, Liuyang;
Yan, Shanchen;
Xu, Yong;
Sun, Huabin

Publication type:

Article

Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300509

By:

Song, Tingfeng;
Koutsogiannis, Panagiotis;
Magén, César;
Pardo, José A.;
Sánchez, Florencio;
Fina, Ignasi

Publication type:

Article

3D Stretchable Devices: Laser‐Patterned Electronic and Photonic Structures.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300705

By:

Thekkekara, Litty V;
Cheong, Ying Zhi;
Rahman, Md. Ataur;
Sriram, Sharath;
Bhaskaran, Madhu

Publication type:

Article

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300528

By:

Rocha, Pedro Fernandes Paes Pinto;
Zeghouane, Mohammed;
Boubenia, Sarah;
Bassani, Franck;
Vauche, Laura;
Martinez, Eugénie;
Vandendaele, William;
Veillerot, Marc;
Salem, Bassem

Publication type:

Article

Study on Growth of Tungsten Bronze Phase from Niobate Perovskite Ceramics in Controlled Atmosphere for Photoferroelectric Applications.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300601

By:

Shi, Xi;
Bai, Yang;
Wichmann, Christoph;
Moritz, Michael;
Kuhfuß, Michel;
Papp, Christian;
Khansur, Neamul H

Publication type:

Article

Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300618

By:

Kho, Wonwoo;
Hwang, Hyunjoo;
Ahn, Seung‐Eon

Publication type:

Article

Solution‐Processed PTCDI‐C8 Crystalline Wire: Dual Role as Mask and Active Layer for Organic Transistors with Increased Switching Speeds.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300548

By:

Choi, Bogyeong;
Kwon, Dongyub;
Tarsoly, Gergely;
Park, Junyong;
Pyo, Seungmoon

Publication type:

Article

Mapping of Spin‐Wave Transport in Thulium Iron Garnet Thin Films Using Diamond Quantum Microscopy.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300648

By:

Timalsina, Rupak;
Wang, Haohan;
Giri, Bharat;
Erickson, Adam;
Xu, Xiaoshan;
Laraoui, Abdelghani

Publication type:

Article

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300519

By:

Chiu, Hsin‐Yuan;
Chao, Tzu‐Ang;
Safron, Nathaniel S.;
Su, Sheng‐Kai;
Liew, San‐Lin;
Yun, Wei‐Sheng;
Mao, Po‐Sen;
Lin, Yu‐Tung;
Hou, Vincent Duen‐Huei;
Lee, Tung‐Ying;
Chang, Wen‐Hao;
Passlack, Matthias;
Wong, Hon‐Sum Philip;
Radu, Iuliana P.;
Wang, Han;
Pitner, Gregory;
Chien, Chao‐Hsin

Publication type:

Article

High Energy Storage and Excellent Thermal Stability in Ternary (1−x)[0.94(Bi0.5Na0.5)TiO3‐0.06BaTiO3]‐xCa(Mg1/3Nb2/3)O3 Lead‐Free Ferroelectric Ceramics.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300590

By:

Kuang, Haiyan;
He, Xiang;
Oleg, V'yunov;
Pang, Dongfang

Publication type:

Article

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300651

By:

Yu, Tianpeng;
Hou, Shuyi;
Liu, Zhenliang;
Wang, Yiru;
Yin, Jiang;
Gao, Xu;
Liu, Nannan;
Yuan, Guoliang;
Wu, Lei;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

Molecular Engineering on Kinetics‐Driven Self‐Assembled Monolayers Working as Auxiliary Layers on Dielectrics in Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300712

By:

Li, Mingliang;
Cao, Yingnan;
Xie, Kefeng;
Tang, Jinyao

Publication type:

Article

A Giant Tunable Piezoelectric Performance in Two‐dimensional In2Se3 via Interface Engineering.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300741

By:

Yuan, Shuoguo;
Zhang, Yiming;
Dai, Minzhi;
Chen, Yancong;
Yu, Haiyan;
Ma, Zengsheng;
Io, Weng Fu;
Luo, Xin;
Hou, Pengfei;
Hao, Jianhua

Publication type:

Article

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300503

By:

Zhang, Chi;
Ning, Jing;
Wang, Boyu;
Wang, Dong;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping.

Published in:

2024

By:

Peng, Songang;
Jin, Zhi;
Yao, Yao;
Li, Ling;
Zhang, Dayong;
Shi, Jingyuan;
Huang, Xinnan;
Niu, Jiebin;
Zhang, Yanhui;
Yu, Guanghui

Publication type:

Correction Notice

ZnSb Films on Flexible Substrates: Stability, Optical Bandgap, Electrical Properties, and Indium Doping.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300403

By:

Elhoussieny, Ibrahim G.;
Rehaag, Thomas J.;
Bell, Gavin R.

Publication type:

Article

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts (Adv. Electron. Mater. 3/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202470013

By:

Zhang, Chi;
Ning, Jing;
Wang, Boyu;
Wang, Dong;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

Masthead: (Adv. Electron. Mater. 3/2024).

Published in:: Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202470012
Publication type:: Article

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys (Adv. Electron. Mater. 3/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300581

By:

Hibino, Yuki;
Yamamoto, Tatsuya;
Yakushiji, Kay;
Taniguchi, Tomohiro;
Kubota, Hitoshi;
Yuasa, Shinji

Publication type:

Article

Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300618

By:

Kho, Wonwoo;
Hwang, Hyunjoo;
Ahn, Seung‐Eon

Publication type:

Article

Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 3

Giant Change in Electrical Resistivity Induced by Moderate Pressure in Pt(bqd)2 – First Candidate Material for an Organic Piezoelectronic Transistor (OPET).

LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterointerface: 20 Years and Beyond.

Fiber‐Based Flexible Ionic Diode with High Robustness and Rectifying Performance: Toward Electronic Textile Circuits.

Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature.

Inch‐Scale Freestanding Single‐Crystalline BiFeO<sub>3</sub> Membranes for Multifunctional Flexible Electronics.

Enhancing the Response Speed of Organic Electrochemical Transistors via Ion Liquid/Metal–Organic Framework‐Embedded Semiconducting Polymers.

Enhancing Self‐Powered Terahertz Photodetection with VSe<sub>2</sub> and Van Der Waals Heterostructure Integration via Photothermoelectric Effect.

Monolayer Mo<sub>1−</sub><sub>x</sub><sub>−</sub><sub>y</sub>Re<sub>x</sub>W<sub>y</sub>S<sub>2</sub>‐Based Photodetectors Grown by Chemical Vapor Deposition.

Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition.

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys.

Co‐Fired Multilayer Thermoelectric Generators Based on Textured Calcium Cobaltite.

Parity‐Time Symmetry in Magnetic Materials and Devices.

Leaky Integrate‐and‐Fire Neuron Based on Organic Electrochemical Transistor for Spiking Neural Networks with Temporal‐Coding.

Improved Polarization‐Retention‐Endurance in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films by ZrO<sub>2</sub> Capping via Electrostatic Effects.

3D Stretchable Devices: Laser‐Patterned Electronic and Photonic Structures.

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors.

Study on Growth of Tungsten Bronze Phase from Niobate Perovskite Ceramics in Controlled Atmosphere for Photoferroelectric Applications.

Exploring Multi‐Bit Logic In‐Memory with Memristive HfO<sub>2</sub>‐Based Ferroelectric Tunnel Junctions.

Solution‐Processed PTCDI‐C<sub>8</sub> Crystalline Wire: Dual Role as Mask and Active Layer for Organic Transistors with Increased Switching Speeds.

Mapping of Spin‐Wave Transport in Thulium Iron Garnet Thin Films Using Diamond Quantum Microscopy.

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors.

High Energy Storage and Excellent Thermal Stability in Ternary (1−x)[0.94(Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>‐0.06BaTiO<sub>3</sub>]‐xCa(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> Lead‐Free Ferroelectric Ceramics.

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer.

Molecular Engineering on Kinetics‐Driven Self‐Assembled Monolayers Working as Auxiliary Layers on Dielectrics in Organic Field‐Effect Transistors.

A Giant Tunable Piezoelectric Performance in Two‐dimensional In<sub>2</sub>Se<sub>3</sub> via Interface Engineering.

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts.

Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS<sub>2</sub>: From Thermally Activated to Variable‐Range Hopping.

ZnSb Films on Flexible Substrates: Stability, Optical Bandgap, Electrical Properties, and Indium Doping.

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts (Adv. Electron. Mater. 3/2024).

Masthead: (Adv. Electron. Mater. 3/2024).

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys (Adv. Electron. Mater. 3/2024).

Exploring Multi‐Bit Logic In‐Memory with Memristive HfO<sub>2</sub>‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024).