Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 3

Results: 32

Giant Change in Electrical Resistivity Induced by Moderate Pressure in Pt(bqd)2 – First Candidate Material for an Organic Piezoelectronic Transistor (OPET).
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300680
By:
- Afanasjevs, Sergejs;
- Benjamin, Helen;
- Kamenev, Konstantin;
- Robertson, Neil
Publication type:
Article
LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300730
By:
- Chen, Shunfeng;
- Ning, Yuanjie;
- Tang, Chi Sin;
- Dai, Liang;
- Zeng, Shengwei;
- Han, Kun;
- Zhou, Jun;
- Yang, Ming;
- Guo, Yanqun;
- Cai, Chuanbing;
- Ariando, Ariando;
- Wee, Andrew T. S.;
- Yin, Xinmao
Publication type:
Article
Fiber‐Based Flexible Ionic Diode with High Robustness and Rectifying Performance: Toward Electronic Textile Circuits.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300653
By:
- Woo, Seohyun;
- Kim, Hwajoong;
- Kim, Jinho;
- Ryu, Hyeji;
- Lee, Jaehong
Publication type:
Article
Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300683
By:
- Chatterjee, Arindom;
- Lobato, Carlos Nunez;
- Rosendal, Victor;
- Anhøj, Thomas Aarøe;
- Grivel, Jean‐Claude;
- Trier, Felix;
- Christensen, Dennis Valbjørn;
- Pryds, Nini
Publication type:
Article
Inch‐Scale Freestanding Single‐Crystalline BiFeO3 Membranes for Multifunctional Flexible Electronics.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300670
By:
- Qiu, Ruibin;
- Peng, Bin;
- Zhang, Jiaxuan;
- Guo, Yunting;
- Liu, Haixia;
- Wang, Xianlei;
- Tang, Haowen;
- Dong, Guohua;
- Zhao, Yanan;
- Jiang, Zhuang‐De;
- Liu, Ming;
- Hu, Zhongqiang
Publication type:
Article
Enhancing the Response Speed of Organic Electrochemical Transistors via Ion Liquid/Metal–Organic Framework‐Embedded Semiconducting Polymers.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300645
By:
- Hsu, Chao‐Hsien;
- Huang, Sin‐Rong;
- Lai, Jen‐Yu;
- Cai, Gu‐Hao;
- Tsai, Meng‐Dian;
- Kung, Chung‐Wei;
- Chen, Jung‐Yao
Publication type:
Article
Enhancing Self‐Powered Terahertz Photodetection with VSe2 and Van Der Waals Heterostructure Integration via Photothermoelectric Effect.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300742
By:
- Jiang, Mengjie;
- Pan, Xiaokai;
- Zhang, Kaixuan;
- Tian, Shijian;
- Zhang, Libo;
- Han, Li;
- He, Yuan;
- Lv, Xuyang;
- Lan, Shiqi;
- Xing, Huaizhong;
- Wang, Lin
Publication type:
Article
Monolayer Mo1−x−yRexWyS2‐Based Photodetectors Grown by Chemical Vapor Deposition.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300711
By:
- Liu, Xinke;
- Zhou, Jie;
- Jiang, Zhongwei;
- Huang, Zheng;
- Li, Bo;
- Ma, Zhengweng;
- Yang, Yongkai;
- Huang, Yeying;
- Zhang, Yating;
- Botcha, V. Divakar;
- Chung, Ren‐Jei;
- Liang, Jiehao;
- Li, Xiaohua;
- Li, Yu;
- He, Wei
Publication type:
Article
Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300722
By:
- Kim, Jiwon;
- Yeon, Changbong;
- Cho, Deok‐Hyun;
- Jung, Jaesun;
- Shong, Bonggeun
Publication type:
Article
Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300581
By:
- Hibino, Yuki;
- Yamamoto, Tatsuya;
- Yakushiji, Kay;
- Taniguchi, Tomohiro;
- Kubota, Hitoshi;
- Yuasa, Shinji
Publication type:
Article
Co‐Fired Multilayer Thermoelectric Generators Based on Textured Calcium Cobaltite.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300636
By:
- Bresch, Sophie;
- Stargardt, Patrick;
- Moos, Ralf;
- Mieller, Björn
Publication type:
Article
Parity‐Time Symmetry in Magnetic Materials and Devices.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300674
By:
- Zhang, Zhitao;
- Xin, Chao;
- Liu, Haoliang
Publication type:
Article
Leaky Integrate‐and‐Fire Neuron Based on Organic Electrochemical Transistor for Spiking Neural Networks with Temporal‐Coding.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300565
By:
- Zhu, Yuanyuan;
- Wan, Xiang;
- Yan, Jie;
- Zhu, Li;
- Li, Run;
- Tan, Cheeleong;
- Yu, Zhihao;
- Sun, Liuyang;
- Yan, Shanchen;
- Xu, Yong;
- Sun, Huabin
Publication type:
Article
Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300509
By:
- Song, Tingfeng;
- Koutsogiannis, Panagiotis;
- Magén, César;
- Pardo, José A.;
- Sánchez, Florencio;
- Fina, Ignasi
Publication type:
Article
3D Stretchable Devices: Laser‐Patterned Electronic and Photonic Structures.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300705
By:
- Thekkekara, Litty V;
- Cheong, Ying Zhi;
- Rahman, Md. Ataur;
- Sriram, Sharath;
- Bhaskaran, Madhu
Publication type:
Article
Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300528
By:
- Rocha, Pedro Fernandes Paes Pinto;
- Zeghouane, Mohammed;
- Boubenia, Sarah;
- Bassani, Franck;
- Vauche, Laura;
- Martinez, Eugénie;
- Vandendaele, William;
- Veillerot, Marc;
- Salem, Bassem
Publication type:
Article
Study on Growth of Tungsten Bronze Phase from Niobate Perovskite Ceramics in Controlled Atmosphere for Photoferroelectric Applications.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300601
By:
- Shi, Xi;
- Bai, Yang;
- Wichmann, Christoph;
- Moritz, Michael;
- Kuhfuß, Michel;
- Papp, Christian;
- Khansur, Neamul H
Publication type:
Article
Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300618
By:
- Kho, Wonwoo;
- Hwang, Hyunjoo;
- Ahn, Seung‐Eon
Publication type:
Article
Solution‐Processed PTCDI‐C8 Crystalline Wire: Dual Role as Mask and Active Layer for Organic Transistors with Increased Switching Speeds.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300548
By:
- Choi, Bogyeong;
- Kwon, Dongyub;
- Tarsoly, Gergely;
- Park, Junyong;
- Pyo, Seungmoon
Publication type:
Article
Mapping of Spin‐Wave Transport in Thulium Iron Garnet Thin Films Using Diamond Quantum Microscopy.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300648
By:
- Timalsina, Rupak;
- Wang, Haohan;
- Giri, Bharat;
- Erickson, Adam;
- Xu, Xiaoshan;
- Laraoui, Abdelghani
Publication type:
Article
Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300519
By:
- Chiu, Hsin‐Yuan;
- Chao, Tzu‐Ang;
- Safron, Nathaniel S.;
- Su, Sheng‐Kai;
- Liew, San‐Lin;
- Yun, Wei‐Sheng;
- Mao, Po‐Sen;
- Lin, Yu‐Tung;
- Hou, Vincent Duen‐Huei;
- Lee, Tung‐Ying;
- Chang, Wen‐Hao;
- Passlack, Matthias;
- Wong, Hon‐Sum Philip;
- Radu, Iuliana P.;
- Wang, Han;
- Pitner, Gregory;
- Chien, Chao‐Hsin
Publication type:
Article
High Energy Storage and Excellent Thermal Stability in Ternary (1−x)[0.94(Bi0.5Na0.5)TiO3‐0.06BaTiO3]‐xCa(Mg1/3Nb2/3)O3 Lead‐Free Ferroelectric Ceramics.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300590
By:
- Kuang, Haiyan;
- He, Xiang;
- Oleg, V'yunov;
- Pang, Dongfang
Publication type:
Article
Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300651
By:
- Yu, Tianpeng;
- Hou, Shuyi;
- Liu, Zhenliang;
- Wang, Yiru;
- Yin, Jiang;
- Gao, Xu;
- Liu, Nannan;
- Yuan, Guoliang;
- Wu, Lei;
- Xia, Yidong;
- Liu, Zhiguo
Publication type:
Article
Molecular Engineering on Kinetics‐Driven Self‐Assembled Monolayers Working as Auxiliary Layers on Dielectrics in Organic Field‐Effect Transistors.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300712
By:
- Li, Mingliang;
- Cao, Yingnan;
- Xie, Kefeng;
- Tang, Jinyao
Publication type:
Article
A Giant Tunable Piezoelectric Performance in Two‐dimensional In2Se3 via Interface Engineering.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300741
By:
- Yuan, Shuoguo;
- Zhang, Yiming;
- Dai, Minzhi;
- Chen, Yancong;
- Yu, Haiyan;
- Ma, Zengsheng;
- Io, Weng Fu;
- Luo, Xin;
- Hou, Pengfei;
- Hao, Jianhua
Publication type:
Article
A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300503
By:
- Zhang, Chi;
- Ning, Jing;
- Wang, Boyu;
- Wang, Dong;
- Zhang, Jincheng;
- Hao, Yue
Publication type:
Article
Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping.
Published in:
2024
By:
- Peng, Songang;
- Jin, Zhi;
- Yao, Yao;
- Li, Ling;
- Zhang, Dayong;
- Shi, Jingyuan;
- Huang, Xinnan;
- Niu, Jiebin;
- Zhang, Yanhui;
- Yu, Guanghui
Publication type:
Correction Notice
ZnSb Films on Flexible Substrates: Stability, Optical Bandgap, Electrical Properties, and Indium Doping.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300403
By:
- Elhoussieny, Ibrahim G.;
- Rehaag, Thomas J.;
- Bell, Gavin R.
Publication type:
Article
A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts (Adv. Electron. Mater. 3/2024).
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202470013
By:
- Zhang, Chi;
- Ning, Jing;
- Wang, Boyu;
- Wang, Dong;
- Zhang, Jincheng;
- Hao, Yue
Publication type:
Article
Masthead: (Adv. Electron. Mater. 3/2024).
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202470012
Publication type:
Article
Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys (Adv. Electron. Mater. 3/2024).
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300581
By:
- Hibino, Yuki;
- Yamamoto, Tatsuya;
- Yakushiji, Kay;
- Taniguchi, Tomohiro;
- Kubota, Hitoshi;
- Yuasa, Shinji
Publication type:
Article
Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024).
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300618
By:
- Kho, Wonwoo;
- Hwang, Hyunjoo;
- Ahn, Seung‐Eon
Publication type:
Article

Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 3

Giant Change in Electrical Resistivity Induced by Moderate Pressure in Pt(bqd)2 – First Candidate Material for an Organic Piezoelectronic Transistor (OPET).

LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterointerface: 20 Years and Beyond.

Fiber‐Based Flexible Ionic Diode with High Robustness and Rectifying Performance: Toward Electronic Textile Circuits.

Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature.

Inch‐Scale Freestanding Single‐Crystalline BiFeO<sub>3</sub> Membranes for Multifunctional Flexible Electronics.

Enhancing the Response Speed of Organic Electrochemical Transistors via Ion Liquid/Metal–Organic Framework‐Embedded Semiconducting Polymers.

Enhancing Self‐Powered Terahertz Photodetection with VSe<sub>2</sub> and Van Der Waals Heterostructure Integration via Photothermoelectric Effect.

Monolayer Mo<sub>1−</sub><sub>x</sub><sub>−</sub><sub>y</sub>Re<sub>x</sub>W<sub>y</sub>S<sub>2</sub>‐Based Photodetectors Grown by Chemical Vapor Deposition.

Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition.

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys.

Co‐Fired Multilayer Thermoelectric Generators Based on Textured Calcium Cobaltite.

Parity‐Time Symmetry in Magnetic Materials and Devices.

Leaky Integrate‐and‐Fire Neuron Based on Organic Electrochemical Transistor for Spiking Neural Networks with Temporal‐Coding.

Improved Polarization‐Retention‐Endurance in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films by ZrO<sub>2</sub> Capping via Electrostatic Effects.

3D Stretchable Devices: Laser‐Patterned Electronic and Photonic Structures.

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors.

Study on Growth of Tungsten Bronze Phase from Niobate Perovskite Ceramics in Controlled Atmosphere for Photoferroelectric Applications.

Exploring Multi‐Bit Logic In‐Memory with Memristive HfO<sub>2</sub>‐Based Ferroelectric Tunnel Junctions.

Solution‐Processed PTCDI‐C<sub>8</sub> Crystalline Wire: Dual Role as Mask and Active Layer for Organic Transistors with Increased Switching Speeds.

Mapping of Spin‐Wave Transport in Thulium Iron Garnet Thin Films Using Diamond Quantum Microscopy.

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors.

High Energy Storage and Excellent Thermal Stability in Ternary (1−x)[0.94(Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>‐0.06BaTiO<sub>3</sub>]‐xCa(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> Lead‐Free Ferroelectric Ceramics.

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer.

Molecular Engineering on Kinetics‐Driven Self‐Assembled Monolayers Working as Auxiliary Layers on Dielectrics in Organic Field‐Effect Transistors.

A Giant Tunable Piezoelectric Performance in Two‐dimensional In<sub>2</sub>Se<sub>3</sub> via Interface Engineering.

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts.

Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS<sub>2</sub>: From Thermally Activated to Variable‐Range Hopping.

ZnSb Films on Flexible Substrates: Stability, Optical Bandgap, Electrical Properties, and Indium Doping.

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts (Adv. Electron. Mater. 3/2024).

Masthead: (Adv. Electron. Mater. 3/2024).

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys (Adv. Electron. Mater. 3/2024).

Exploring Multi‐Bit Logic In‐Memory with Memristive HfO<sub>2</sub>‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024).