Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 1

Results: 34

Unlocking Innovations: Celebrating the First Year of Open Access in Advanced Electronic Materials.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300791

By:

Tomasello, Gaia;
Banerjee, Swagata;
Hazra, Soumyajit

Publication type:

Article

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300589

By:

Flynn‐Hepford, Matthew;
Lasseter, John;
Kravchenko, Ivan;
Randolph, Steven;
Keum, Jong;
Sumpter, Bobby G.;
Jesse, Stephen;
Maksymovych, Petro;
Talin, A. Alec;
Marinella, Matthew J.;
Rack, Philip D.;
Ievlev, Anton V.;
Ovchinnikova, Olga S.

Publication type:

Article

Inkjet‐Printed, Wafer‐Scale Organic Schottky‐Gate Transistors toward Single‐Battery‐Driven Integrated Logic.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300395

By:

Hao, Ziqian;
Qian, Jun;
Li, Yating;
Dai, Qinyong;
Li, Longfei;
Xie, Jiacheng;
Sun, Li;
Wang, Xiaomu;
Wang, Xinran;
Shi, Yi;
Li, Yun

Publication type:

Article

Direct Visualization of Anti‐Ferroelectric Switching Dynamics via Electrocaloric Imaging.

Published in:

2024

By:

Vales‐Castro, Pablo;
Vellvehi, Miquel;
Perpiñà, Xavier;
Caicedo, Jose Manuel;
Jordà, Xavier;
Faye, Romain;
Roleder, Krystian;
Kajewski, Dariusz;
Perez‐Tomas, Amador;
Defay, Emmanuel;
Catalan, Gustau

Publication type:

Correction Notice

Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300646

By:

Wang, Jin;
Xu, Yongkang;
Wang, Shuanghai;
Dai, Xingze;
Yan, Pengfei;
Zhou, Jian;
Wang, Ruifeng;
Xu, Yongbing;
He, Liang

Publication type:

Article

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300511

By:

Hwang, Hyeon Jun;
Kim, Seung Mo;
Lee, Byoung Hun

Publication type:

Article

Conduction Mechanism Switching from Coulomb Blockade to Classical Critical Percolation Behavior in Disordered Nanoparticle Array.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300485

By:

Prasad, Abhijeet;
Lim, Jay Min;
Saraf, Ravi F

Publication type:

Article

High‐Efficiency Blue‐Emission Crystalline Organic Light‐Emitting Diodes by Engineering Thermally Activated Delayed Fluorescence Nanoaggregates.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300616

By:

Liu, Yijun;
Wang, Xiaodi;
Zhu, Feng;
Wang, Yue;
Yan, Donghang

Publication type:

Article

Gate‐controlled Multispectral Response in Graphene‐Based Heterostructure Photodetector.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300517

By:

Dat, Vu Khac;
Hong, Chengyun;
Tran, Minh Dao;
Chau, Tuan Khanh;
Do, Van Dam;
Tran, Trang Thu;
Nguyen, Minh Chien;
Duong, Hai Phuong;
Oh, Saejin;
Yu, Woo Jong;
Kim, Jeongyong;
Kim, Ji‐Hee

Publication type:

Article

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300608

By:

Vazquez‐Arce, Jorge Luis;
Molina‐Reyes, Joel;
Contreras, Oscar Edel;
Tiznado, Hugo

Publication type:

Article

Vertical 1T'‐WTe2/WS2 Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300672

By:

Ma, Jingyi;
Wang, Jina;
Chen, Quan;
Chen, Shengdi;
Yang, Mengmeng;
Sun, Yiming;
Zheng, Zhaoqiang;
Huo, Nengjie;
Yan, Yong;
Li, Jingbo;
Gao, Wei

Publication type:

Article

Improving the Uniformity of Top Emitting Organic Light Emitting Diodes Using a Hybrid Electrode Structure.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300675

By:

Riahi, Mina;
Yoshida, Kou;
Hafeez, Hassan;
Samuel, Ifor D. W.

Publication type:

Article

Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300457

By:

Ignacio, Nicholas D;
Fatheema, Jameela;
Jeon, Yu‐Rim;
Akinwande, Deji

Publication type:

Article

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300547

By:

Seo, Jihoon;
Kim, Juhan;
Kim, Jae Ha;
Kim, Jae Hoon;
Char, Kookrin

Publication type:

Article

Ferroelectricity in Epitaxial Tetragonal ZrO2 Thin Films.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300516

By:

El Boutaybi, Ali;
Maroutian, Thomas;
Largeau, Ludovic;
Findling, Nathaniel;
Brubach, Jean‐Blaise;
Cervasio, Rebecca;
Degezelle, Alban;
Matzen, Sylvia;
Vivien, Laurent;
Roy, Pascale;
Karamanis, Panagiotis;
Rérat, Michel;
Lecoeur, Philippe

Publication type:

Article

The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300635

By:

Spetzler, Benjamin;
Abdel, Dilara;
Schwierz, Frank;
Ziegler, Martin;
Farrell, Patricio

Publication type:

Article

A Dynamic Memory for Reservoir Computing Utilizing Ion Migration in CuInP2S6.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300481

By:

Wu, Yangwu;
Duong, Ngoc Thanh;
Chien, Yu‐Chieh;
Liu, Song;
Ang, Kah‐Wee

Publication type:

Article

Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300383

By:

Chen, Huohuo;
Wang, Qianjin;
Tan, Qiuhong;
Zhang, Hui;
Liu, Lei;
Liu, Yingkai

Publication type:

Article

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO3 Films.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300405

By:

Yuan, Xueyou;
Okamoto, Kazuki;
Kawano, Mitsuki;
Yoshino, Masahito;
Nagasaki, Takanori;
Imai, Yasuhiko;
Sakata, Osami;
Yamada, Tomoaki

Publication type:

Article

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300327

By:

Kim, Bong Ho;
Kuk, Song‐Hyeon;
Kim, Seong Kwang;
Kim, Joon Pyo;
Suh, Yoon‐Je;
Jeong, Jaeyong;
Lee, Chan Jik;
Geum, Dae‐Myeong;
Yoon, Young Joon;
Kim, Sang Hyeon

Publication type:

Article

High Gain Derived from Facile Carrier Dynamics Manipulation for Sensitive X‐ray Detection and Imaging.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300555

By:

Liu, Shilin;
Ding, Yijing;
Wang, Xin;
Li, Yuwei;
Chen, Jing;
Zhao, Zhiwei;
Zhu, Zhuoya;
Wu, Jun;
Fayemi, Omolola Esther;
Bae, Byung Seong;
Zhu, Ying;
Lei, Wei;
Xu, Xiaobao;
Li, Qing

Publication type:

Article

Extensive Properties Investigation of AgNWs‐PEDOT:PSS Based Transparent Conductive Electrode for Ultraflexible Organic Photodetector Applications.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300559

By:

Dcosta, Jostin Vinroy;
Ochoa, Daniel;
Sanaur, Sébastien

Publication type:

Article

Oxygen Vacancies Mediated Co‐Sputtered Ti‐Doped BiVO4 Thin Films‐Based Transparent Photovoltaic Device.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300498

By:

Ghosh, Shuvaraj;
Patel, Malkeshkumar;
Choi, Hyeon‐Gyu;
Youn, Sung‐Min;
Jeong, Chaehwan;
Kim, Joondong

Publication type:

Article

Spiking Neurons with Neural Dynamics Implemented Using Stochastic Memristors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300564

By:

Song, Lekai;
Liu, Pengyu;
Pei, Jingfang;
Bai, Fan;
Liu, Yang;
Liu, Songwei;
Wen, Yingyi;
Ng, Leonard W. T.;
Pun, Kong‐Pang;
Gao, Shuo;
Meng, Max Q.‐H.;
Hasan, Tawfique;
Hu, Guohua

Publication type:

Article

Nanomaterials‐Based Bioinspired Next Generation Wearable Sensors: A State‐of‐the‐Art Review.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300436

By:

Sengupta, Debarun;
Kottapalli, Ajay Giri Prakash

Publication type:

Article

Direction‐Dependent Lateral Domain Walls in Ferroelectric Hafnium Zirconium Oxide and their Gradient Energy Coefficients: A First‐Principles Study.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300400

By:

Paul, Tanmoy Kumar;
Saha, Atanu Kumar;
Gupta, Sumeet Kumar

Publication type:

Article

Quinolinoacridine as High Efficiency Building Unit in Single‐Layer Phosphorescent Organic Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300582

By:

Brouillac, Clément;
Lucas, Fabien;
Ari, Denis;
Tondelier, Denis;
Meot, Jonathan;
Malvaux, Marc;
Jadaud, Cyril;
Lebreton, Christophe;
Rault‐Berthelot, Joëlle;
Quinton, Cassandre;
Jacques, Emmanuel;
Poriel, Cyril

Publication type:

Article

Effective Thermal Properties of a HTS Transition Edge Bolometer for High‐Flux Neutron Detection.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300420

By:

Brock, Mette Bybjerg;
Østergaard, Emil Visby;
Wulff, Anders C.;
Abrahamsen, Asger Bech;
Kuhn, Luise Theil

Publication type:

Article

Omega‐Gate Silicon Nanowire Geometric Diodes with Reconfigurable Self‐Switching Operation and THz Rectification.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300466

By:

White, Kelly L.;
Rogelberg, Gordon V.;
Custer, James P.;
Cahoon, James F.

Publication type:

Article

Sensitive Detection of a Gaseous Analyte with Low‐Power Metal–Organic Framework Functionalized Carbon Nanotube Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300533

By:

Kumar, Sandeep;
Dehm, Simone;
Wieland, Laura;
Chandresh, Abhinav;
Heinke, Lars;
Flavel, Benjamin S.;
Krupke, Ralph

Publication type:

Article

Nanomaterials‐Based Bioinspired Next Generation Wearable Sensors: A State‐of‐the‐Art Review (Adv. Electron. Mater. 1/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202470004

By:

Sengupta, Debarun;
Kottapalli, Ajay Giri Prakash

Publication type:

Article

Masthead: (Adv. Electron. Mater. 1/2024).

Published in:: Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202470003
Publication type:: Article

The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices (Adv. Electron. Mater. 1/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202470002

By:

Spetzler, Benjamin;
Abdel, Dilara;
Schwierz, Frank;
Ziegler, Martin;
Farrell, Patricio

Publication type:

Article

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging (Adv. Electron. Mater. 1/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202470001

By:

Flynn‐Hepford, Matthew;
Lasseter, John;
Kravchenko, Ivan;
Randolph, Steven;
Keum, Jong;
Sumpter, Bobby G.;
Jesse, Stephen;
Maksymovych, Petro;
Talin, A. Alec;
Marinella, Matthew J.;
Rack, Philip D.;
Ievlev, Anton V.;
Ovchinnikova, Olga S.

Publication type:

Article

Works matching IS 2199160X AND DT 2024 AND VI 10 AND IP 1

Unlocking Innovations: Celebrating the First Year of Open Access in Advanced Electronic Materials.

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging.

Inkjet‐Printed, Wafer‐Scale Organic Schottky‐Gate Transistors toward Single‐Battery‐Driven Integrated Logic.

Direct Visualization of Anti‐Ferroelectric Switching Dynamics via Electrocaloric Imaging.

Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe<sub>2</sub> Ultra‐Thin Films.

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Graphene FETs.

Conduction Mechanism Switching from Coulomb Blockade to Classical Critical Percolation Behavior in Disordered Nanoparticle Array.

High‐Efficiency Blue‐Emission Crystalline Organic Light‐Emitting Diodes by Engineering Thermally Activated Delayed Fluorescence Nanoaggregates.

Gate‐controlled Multispectral Response in Graphene‐Based Heterostructure Photodetector.

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching.

Vertical 1T'‐WTe<sub>2</sub>/WS<sub>2</sub> Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior.

Improving the Uniformity of Top Emitting Organic Light Emitting Diodes Using a Hybrid Electrode Structure.

Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In<sub>2</sub>Se<sub>3</sub>.

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO<sub>3</sub>.

Ferroelectricity in Epitaxial Tetragonal ZrO<sub>2</sub> Thin Films.

The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices.

A Dynamic Memory for Reservoir Computing Utilizing Ion Migration in CuInP<sub>2</sub>S<sub>6</sub>.

Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices.

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO<sub>3</sub> Films.

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics.

High Gain Derived from Facile Carrier Dynamics Manipulation for Sensitive X‐ray Detection and Imaging.

Extensive Properties Investigation of AgNWs‐PEDOT:PSS Based Transparent Conductive Electrode for Ultraflexible Organic Photodetector Applications.

Oxygen Vacancies Mediated Co‐Sputtered Ti‐Doped BiVO<sub>4</sub> Thin Films‐Based Transparent Photovoltaic Device.

Spiking Neurons with Neural Dynamics Implemented Using Stochastic Memristors.

Nanomaterials‐Based Bioinspired Next Generation Wearable Sensors: A State‐of‐the‐Art Review.

Direction‐Dependent Lateral Domain Walls in Ferroelectric Hafnium Zirconium Oxide and their Gradient Energy Coefficients: A First‐Principles Study.

Quinolinoacridine as High Efficiency Building Unit in Single‐Layer Phosphorescent Organic Light‐Emitting Diodes.

Effective Thermal Properties of a HTS Transition Edge Bolometer for High‐Flux Neutron Detection.

Omega‐Gate Silicon Nanowire Geometric Diodes with Reconfigurable Self‐Switching Operation and THz Rectification.

Sensitive Detection of a Gaseous Analyte with Low‐Power Metal–Organic Framework Functionalized Carbon Nanotube Transistors.

Nanomaterials‐Based Bioinspired Next Generation Wearable Sensors: A State‐of‐the‐Art Review (Adv. Electron. Mater. 1/2024).

Masthead: (Adv. Electron. Mater. 1/2024).

The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices (Adv. Electron. Mater. 1/2024).

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging (Adv. Electron. Mater. 1/2024).