Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 6
Results: 38
Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370030
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Masthead: (Adv. Electron. Mater. 6/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370029
- Publication type:
- Article
Charged Domain Walls in BaTiO<sub>3</sub> Crystals Emerging from Superdomain Boundaries (Adv. Electron. Mater. 6/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370028
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Novel Dielectric Nanogranular Materials with an Electrically Tunable Frequency Response (Adv. Electron. Mater. 6/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370027
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Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300120
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Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300053
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Colossal Gilbert Damping Anisotropy in Heusler‐Alloy Thin Films.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300049
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Rapid Self‐Assembly Process at Air/Water Confined Interface for Highly Aligned Crystalline Polymeric Semiconductor Films.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300029
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- Article
Charged Domain Walls in BaTiO<sub>3</sub> Crystals Emerging from Superdomain Boundaries.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300005
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- Article
Small Size and Low‐Cost TENG‐Based Self‐Powered Vibration Measuring and Alerting System.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300111
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- Article
Microscopic Quantum Transport Processes of Out‐of‐Plane Charge Flow in 2D Semiconductors Analyzed by a Fowler–Nordheim Tunneling Probe.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300051
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- Article
Recent Progress in Multiterminal Memristors for Neuromorphic Applications.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300108
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- Article
Understanding the Effects of Primary and Secondary Doping via Post‐Treatment of P‐Type and N‐Type Hybrid Organic–Inorganic Thin Film Thermoelectric Materials.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300076
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- Article
Designing Ionic Conductive Elastomers Using Hydrophobic Networks and Hydrophilic Salt Hydrates with Improved Stability in Air.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300069
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- Article
Electronic, Optoelectronic, and Thermoelectric Single‐Molecule Devices with Different Molecular Unit‐Length.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300063
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- Article
Integrated Memristor Network for Physiological Signal Processing.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300021
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- Article
Configurable NbO<sub>x</sub> Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300018
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- Article
Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film Capacitors.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300016
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- Article
PVDF Based Static Charge Induced Flexoelectric Microphone.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300012
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- Article
A Memristive Cell with Long Retention Time in 65 nm CMOS Technology.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300010
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- Article
Origin of Topological Hall‐Like Feature in Epitaxial SrRuO<sub>3</sub> Thin Films.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300020
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- Article
Uncovering the Different Components of Contact Resistance to Atomically Thin Semiconductors.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201342
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Low Leakage in High‐k Perovskite Gate Oxide SrHfO<sub>3</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201341
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- Article
Wireless and Flexible Tactile Sensing Array Based on an Adjustable Resonator with Machine‐Learning Perception.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201334
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- Article
Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201330
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- Article
Enhancement of Extraordinary Size Effect on CaRuO<sub>3</sub> Ultrathin Films.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201312
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- Article
Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201306
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- Article
Dynamics of an Electrically Driven Phase Transition in Ca<sub>2</sub>RuO<sub>4</sub> Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201303
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Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201299
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Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Based Capacitors Through Operando Nanobeam X‐Ray Diffraction.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201298
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- Article
Printed 700 V/V Gain Amplifiers Based on Organic Source‐Gated Transistors with Field Plates.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201263
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- Article
Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259
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- Article
Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201252
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- Article
Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201227
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- Article
Trap‐Assisted Memristive Switching in HfO<sub>2</sub>‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201226
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- Article
Novel Dielectric Nanogranular Materials with an Electrically Tunable Frequency Response.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201218
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- Publication type:
- Article
Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201190
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- Publication type:
- Article
Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201104
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- Article