Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 5
Results: 39
Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO<sub>2</sub>/W Structure for Artificial Synapses with Visual Perception (Adv. Electron. Mater. 5/2023)
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201320
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Electronic Coupling of Metal‐to‐Insulator Transitions in Nickelate‐Based Heterostructures (Adv. Electron. Mater. 5/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202370026
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Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO<sub>2</sub>/W Structure for Artificial Synapses with Visual Perception (Adv. Electron. Mater. 5/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201320
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Masthead: (Adv. Electron. Mater. 5/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202370024
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- Article
Bottom‐Up Growth of n‐Type Polymer Monolayers for High‐Performance Complementary Integrated Circuits (Adv. Electron. Mater. 5/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202370023
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Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications (Adv. Electron. Mater. 5/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202370022
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Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202300032
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Effect of Residual Carbon on Spin‐Polarized Coupling at a Graphene/Ferromagnet Interface.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202300031
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Development of a Triboelectric Nanogenerator for Joining of Silver Nanorods.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201348
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Highly Sensitive Piezoelectric E‐Skin Design Based on Electromechanical Coupling Concept.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201339
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Manipulation of Magnetization Switching by Ultrafast Spin‐Polarized Hot‐Electron Transport in Synthetic Antiferromagnet.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201331
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Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO<sub>2</sub>/W Structure for Artificial Synapses with Visual Perception.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201320
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- Article
Recent Advances in Multicomponent Organic Composite Thermoelectric Materials.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201310
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Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201309
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- Article
Bottom‐Up Growth of n‐Type Polymer Monolayers for High‐Performance Complementary Integrated Circuits.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201307
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- Article
Electronic Coupling of Metal‐to‐Insulator Transitions in Nickelate‐Based Heterostructures.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201291
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- Article
Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same Ambipolar Organic Semiconductor and ITO S/D Electrodes.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201288
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Direct Patterning of Conductive Structures on Hydrogels by Laser‐Based Graphitization for Supercapacitor Fabrication.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201277
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Purely Electrical Controllable Spin–Orbit Torque‐Based Reconfigurable Physically Unclonable Functions.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201268
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Oxygen Scavenging in HfZrO<sub>x</sub>‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201257
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Structural Engineering of H<sub>0.5</sub>Z<sub>0.5</sub>O<sub>2</sub>‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201247
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Manipulation of the Ferromagnetism in LaCoO<sub>3</sub> Thin Films Through Cation‐Stoichiometric Engineering.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201245
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Dual‐Channel Dielectric Tunability in Highly Textured BaTi<sub>0.99</sub>Fe<sub>0.01</sub>O<sub>3−</sub><sub>δ</sub> Ceramics With Micro‐Twin Boundary.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201243
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Unexpected Piezoresistive Effect, Room‐Temperature Ferromagnetism, and Thermal Stability of 2D β‐CuI Crystals in Reduced Graphene Oxide Membrane.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201241
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Computational Analysis of Metal Contact on Bi<sub>2</sub>O<sub>2</sub>Se with Se Surface Vacancies.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201221
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Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201212
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Enhancement of Piezoelectricity by Novel Poling Method of the Rare‐Earth Modified BiFeO<sub>3</sub>–BaTiO<sub>3</sub> Lead‐Free Ceramics.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201210
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- Article
Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201203
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Ab Initio Prediction of Ultra‐Wide Band Gap B<sub>x</sub>Al<sub>1−x</sub>N Materials.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201197
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Research Process of Carbon Dots in Memristors.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201195
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Experimental and Theoretical Studies of the Surface Oxidation Process of Rare‐Earth Tritellurides.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201129
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Competition between Carrier Injection and Structural Distortions in Electron‐Doped Perovskite Nickelate Thin Films.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201182
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Soft Electronic Block Copolymer Elastomer Composites for Multi‐Material Printing of Stretchable Physiological Sensors on Textiles.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201173
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Organic Solvent Free Synthesis and Processing of Semiconducting Polymers for Field Effect Transistors in Waterborne Dispersions.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201160
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Evolution of the Ferroelectric Properties of AlScN Film by Electrical Cycling with an Inhomogeneous Field Distribution.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201142
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Engineering of Grain Boundaries in CeO<sub>2</sub> Enabling Tailorable Resistive Switching Properties.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201186
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Band Structure Engineering of MXenes for Low‐Loss Visible Epsilon‐Near‐Zero Properties by First‐Principles Calculation.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201119
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Graphene‐on‐Silicon Hybrid Field‐Effect Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201083
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Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202200941
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