Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 4

Results: 44

Molecularly Thin BaTiO3 Nanosheets with Stable Ferroelectric Response (Adv. Electron. Mater. 4/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202370018

By:

Hagiwara, Kazuki;
Byun, Ki Nam;
Morita, Shu;
Yamamoto, Eisuke;
Kobayashi, Makoto;
Liu, Xiaoyan;
Osada, Minoru

Publication type:

Article

Enhancement of Light Extraction Efficiency and Suppression of Roll‐Off Characteristics of Thermally Activated Delayed Fluorescence Organic Light‐Emitting Diodes by Inserting Nanoscale Pixel‐Defining Layer (Adv. Electron. Mater. 4/2023)

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201264

By:

Lee, Seungwon;
Park, Jun‐Young;
Park, Jaewon;
Bi, Jian Cheng;
Kang, Byeongwoo;
Hwang, Young Hyun;
Seok, Jiwon;
Park, Young Wook;
Ju, Byeong‐Kwon

Publication type:

Article

Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors (Adv. Electron. Mater. 4/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202370021

By:

Han, Jimin;
Park, Kitae;
Kim, Hyun‐Mi;
Yoon, Tae‐Sik

Publication type:

Article

Masthead: (Adv. Electron. Mater. 4/2023).

Published in:: Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202370020
Publication type:: Article

Enhancement of Light Extraction Efficiency and Suppression of Roll‐Off Characteristics of Thermally Activated Delayed Fluorescence Organic Light‐Emitting Diodes by Inserting Nanoscale Pixel‐Defining Layer (Adv. Electron. Mater. 4/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201264

By:

Lee, Seungwon;
Park, Jun‐Young;
Park, Jaewon;
Bi, Jian Cheng;
Kang, Byeongwoo;
Hwang, Young Hyun;
Seok, Jiwon;
Park, Young Wook;
Ju, Byeong‐Kwon

Publication type:

Article

Lateral Perovskite Single‐Crystal Capacitors for Self‐Powered Photodetection.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201318

By:

Zhang, Zhen Yu;
Sun, Lei;
Wang, Guo Ping

Publication type:

Article

Ameliorating Properties of Perovskite and Perovskite–Silicon Tandem Solar Cells via Mesoporous Antireflection Coating Model.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201317

By:

Wang, Weijian;
Yu, Gang;
Mao, Lebao;
Attique, Sanam;
Si, Zhiwei;
Yang, Qing;
Zhang, Yongqiang;
Huang, Guiqiu;
Zhang, Haiyan;
Yan, Ximing;
Wang, Shengfu;
Zhang, Xiuhua

Publication type:

Article

Enhancement of Light Extraction Efficiency and Suppression of Roll‐Off Characteristics of Thermally Activated Delayed Fluorescence Organic Light‐Emitting Diodes by Inserting Nanoscale Pixel‐Defining Layer.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201264

By:

Lee, Seungwon;
Park, Jun‐Young;
Park, Jaewon;
Bi, Jian Cheng;
Kang, Byeongwoo;
Hwang, Young Hyun;
Seok, Jiwon;
Park, Young Wook;
Ju, Byeong‐Kwon

Publication type:

Article

Realization of Zero‐Field Skyrmions in a Magnetic Tunnel Junction.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201240

By:

He, Bin;
Hu, Yue;
Zhao, Chenbo;
Wei, Jinwu;
Zhang, Junwei;
Zhang, Yu;
Cheng, Chen;
Li, Jiahui;
Nie, Zhuyang;
Luo, Yanxiang;
Zhou, Yan;
Zhang, Shilei;
Zeng, Zhongming;
Peng, Yong;
Coey, John Michael David;
Han, Xiufeng;
Yu, Guoqiang

Publication type:

Article

Molecularly Thin BaTiO3 Nanosheets with Stable Ferroelectric Response.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201239

By:

Hagiwara, Kazuki;
Byun, Ki Nam;
Morita, Shu;
Yamamoto, Eisuke;
Kobayashi, Makoto;
Liu, Xiaoyan;
Osada, Minoru

Publication type:

Article

Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201141

By:

Choi, Je Oh;
Kim, Tae Yeon;
Park, Seong Min;
Seol, WooJun;
Joh, Hyunjin;
Anoop, Gopinathan;
Jo, Ji Young

Publication type:

Article

High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201236

By:

Song, Xiaopan;
Wu, Lei;
Liang, Yifei;
Liu, Zongguang;
Wang, Junzhuan;
Xu, Jun;
Chen, Kunji;
Yu, Linwei

Publication type:

Article

C8‐BTBT‐C8 Thin‐Film Transistors Based on Micro‐Contact Printed PEDOT:PSS/MWCNT Electrodes.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201233

By:

Gubanov, Kirill;
Johnson, Manuel;
Akay, Melda;
Wolz, Benedikt C.;
Shen, Dan;
Cheng, Xing;
Christiansen, Silke;
Fink, Rainer H.

Publication type:

Article

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201224

By:

Slassi, Amine;
Medondjio, Linda‐Sheila;
Padovani, Andrea;
Tavanti, Francesco;
He, Xu;
Clima, Sergiu;
Garbin, Daniele;
Kaczer, Ben;
Larcher, Luca;
Ordejón, Pablo;
Calzolari, Arrigo

Publication type:

Article

Ambipolarity Regulation of Deep‐UV Photocurrent by Controlling Crystalline Phases in Ga2O3 Nanostructure for Switchable Logic Applications.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201216

By:

Cheng, Yuexing;
Ye, Junhao;
Lai, Li;
Fang, Shi;
Guo, Daoyou

Publication type:

Article

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201208

By:

Hong, TaeHyun;
Kim, Yoon‐Seo;
Choi, Su‐Hwan;
Lim, Jun Hyung;
Park, Jin‐Seong

Publication type:

Article

Polymer‐Based n‐Type Yarn for Organic Thermoelectric Textiles.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201235

By:

Darabi, Sozan;
Yang, Chi‐Yuan;
Li, Zerui;
Huang, Jun‐Da;
Hummel, Michael;
Sixta, Herbert;
Fabiano, Simone;
Müller, Christian

Publication type:

Article

The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201202

By:

Kim, Hye‐Mi;
Choi, Su‐Hwan;
Lee, Han Uk;
Cho, Sung Beom;
Park, Jin‐Seong

Publication type:

Article

Achieving Efficient Light‐Emitting Diodes by Controlling Phase Distribution of Quasi‐2D Perovskites.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201199

By:

Yang, Kaiyu;
Mao, Jinliang;
Zheng, Jinping;
Yu, Yongshen;
Xu, Baolin;
Zhang, Qingkai;
Weng, Xukeng;
Lin, Qiuxiang;
Guo, Tailiang;
Li, Fushan

Publication type:

Article

Multifunctional Electronic Textiles by Direct 3D Printing of Stretchable Conductive Fibers.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201194

By:

Wang, Yuntian;
Wang, Zhixun;
Wang, Zhe;
Xiong, Ting;
Shum, Perry Ping;
Wei, Lei

Publication type:

Article

Unlocking AlN Piezoelectric Performance with Earth‐Abundant Dopants.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201187

By:

Startt, Jacob;
Quazi, Mohammed;
Sharma, Pallavi;
Vazquez, Irma;
Poudyal, Aseem;
Jackson, Nathan;
Dingreville, Remi

Publication type:

Article

Tunable Quantum Dots from Atomically Precise Graphene Nanoribbons Using a Multi‐Gate Architecture.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201204

By:

Zhang, Jian;
Braun, Oliver;
Barin, Gabriela Borin;
Sangtarash, Sara;
Overbeck, Jan;
Darawish, Rimah;
Stiefel, Michael;
Furrer, Roman;
Olziersky, Antonis;
Müllen, Klaus;
Shorubalko, Ivan;
Daaoub, Abdalghani H. S.;
Ruffieux, Pascal;
Fasel, Roman;
Sadeghi, Hatef;
Perrin, Mickael L.;
Calame, Michel

Publication type:

Article

Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201137

By:

Tan, Yung‐Fang;
Chang, Kai‐Chun;
Tsai, Tsung‐Ming;
Chang, Ting‐Chang;
Chen, Wen‐Chung;
Yeh, Yu‐Hsuan;
Wu, Chung‐Wei;
Lin, Chao‐Cheng;
Sze, Simon M.

Publication type:

Article

Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201134

By:

Son, Jaemin;
Shin, Yunwoo;
Cho, Kyoungah;
Kim, Sangsig

Publication type:

Article

A New Group of 2D Non‐van der Waals Materials with Ultra Low Exfoliation Energies.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201112

By:

Barnowsky, Tom;
Krasheninnikov, Arkady V.;
Friedrich, Rico

Publication type:

Article

Memristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201111

By:

Goossens, Anouk S.;
Ahmadi, Majid;
Gupta, Divyanshu;
Bhaduri, Ishitro;
Kooi, Bart J.;
Banerjee, Tamalika

Publication type:

Article

Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201110

By:

Han, Jimin;
Park, Kitae;
Kim, Hyun‐Mi;
Yoon, Tae‐Sik

Publication type:

Article

Biodegradable Cellulose Nanocomposite Substrate for Recyclable Flexible Printed Electronics.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201094

By:

Jaiswal, Aayush Kumar;
Kumar, Vinay;
Jansson, Elina;
Huttunen, Olli‐Heikki;
Yamamoto, Akio;
Vikman, Minna;
Khakalo, Alexey;
Hiltunen, Jussi;
Behfar, Mohammad H.

Publication type:

Article

Sb2Te3/MoS2 Van der Waals Junctions with High Thermal Stability and Low Contact Resistance.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201091

By:

Chang, Wen Hsin;
Hatayama, Shogo;
Saito, Yuta;
Okada, Naoya;
Endo, Takahiko;
Miyata, Yasumitsu;
Irisawa, Toshifumi

Publication type:

Article

Proton Irradiation Effects on the Pyroelectric Properties of P‐Type Bismuth Antimonide/Poly(vinylidene fluoride–trifluoroethylene) Composite Films.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201084

By:

Cai, Chuanyang;
Zhang, Hong;
Li, Bo;
Han, Zhijia;
Wang, Fang;
Hou, Pengfei;
Liu, Weishu

Publication type:

Article

Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201081

By:

Al‐Mamun, Mohammad;
Chakraborty, Amrita;
Orlowski, Marius

Publication type:

Article

Improved Robustness against Magnetic Field in Spin–Orbit‐Torque‐Based Physical Unclonable Functions through Write‐Back Operation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201073

By:

Koh, Daekyu;
Kang, Jaimin;
Kim, Taehwan;
Lee, Jisung;
Noh, Sujung;
Lee, Hansaem;
Kwon, JoonHyun;
Lee, Soogil;
Park, Jongsun;
Park, Byong‐Guk

Publication type:

Article

Structural Stability and Electronic Transport Properties of Nb2C‐MXenes under High Pressure.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201071

By:

Jin, Haolin;
Wang, Kai;
Mao, Zhongquan;
Tang, Lingyun;
Zhang, Jiang

Publication type:

Article

A Two‐Terminal Optoelectronic Synapses Array Based on the ZnO/Al2O3/CdS Heterojunction with Strain‐Modulated Synaptic Weight.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201068

By:

Han, Xun;
Zhang, Yufei;
Huo, Zhihao;
Wang, Xiandi;
Hu, Guofeng;
Xu, Zhangsheng;
Lu, Hui;
Lu, Qiuchun;
Sun, Xidi;
Qiu, Li;
Yan, Peiguang;
Pan, Caofeng

Publication type:

Article

Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201032

By:

Wang, Lu;
Zhu, Hongyu;
Zuo, Ze;
Wen, Dianzhong

Publication type:

Article

Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201031

By:

Chiu, Ming‐Hui;
Ji, Xiang;
Zhang, Tianyi;
Mao, Nannan;
Luo, Yue;
Shi, Chuqiao;
Zheng, Xudong;
Liu, Hongwei;
Han, Yimo;
Wilson, William L.;
Luo, Zhengtang;
Tung, Vincent;
Kong, Jing

Publication type:

Article

Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201025

By:

Liu, Xiao;
Yuan, Haochen;
Liu, Peiwen;
Shi, Jingyu;
Wang, Hailong;
Nie, Shuaihua;
Jin, Feng;
Zheng, Zhe;
Yu, Xuezhe;
Zhao, Jianhua;
Zhao, Haibin;
Lüpke, Gunter

Publication type:

Article

Flexible Hybrid Electronics via Near‐Infrared Radiation‐Assisted Soldering of Surface Mount Devices on Screen Printed Circuits.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201012

By:

Kasi, Venkat;
Zareei, Amin;
Gopalakrishnan, Sarath;
Alcaraz, Alejandro M.;
Joshi, Shantanu;
Arfaei, Babak;
Rahimi, Rahim

Publication type:

Article

High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200980

By:

Gablech, Imrich;
Migliaccio, Ludovico;
Brodský, Jan;
Havlíček, Marek;
Podešva, Pavel;
Hrdý, Radim;
Ehlich, Jiří;
Gryszel, Maciej;
Głowacki, Eric Daniel

Publication type:

Article

Bio‐Voltage Memristors: From Physical Mechanisms to Neuromorphic Interfaces.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200972

By:

Wang, Saisai;
Wang, Rui;
Cao, Yaxiong;
Ma, Xiaohua;
Wang, Hong;
Hao, Yue

Publication type:

Article

Interfacial Superconductivity and Zero Bias Peak in Quasi‐One‐Dimensional Bi2Te3/Fe1+yTe Heterostructure Nanostructures.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200943

By:

Cheng, Man Kit;
Ng, Cheuk Yin;
Ho, Sui Lun;
Atanov, Omargeldi;
Tai, Wai Ting;
Liang, Jing;
Lortz, Rolf;
Sou, Iam Keong

Publication type:

Article

Synthesis and Characterization of a New Ferroelectric with Low Lead Content, a High Curie Temperature, and a High Piezoelectric Response.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200910

By:

Rowe, Thomas;
Richtik, Brooke N.;
Dolgos, Michelle

Publication type:

Article

Hybrid Perovskite‐Based Flexible and Stable Memristor by Complete Solution Process for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200908

By:

Patel, Mansi;
Kumbhar, Dhananjay D.;
Gosai, Jeny;
Sekhar, Muddam Raja;
Mallajosyula, Arun Tej;
Solanki, Ankur

Publication type:

Article

Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200905

By:

Abideen, Zain Ul;
Choi, Jun‐Gyu;
Yuwono, Jodie A.;
Kiy, Alexander;
Kumar, Priyank Vijaya;
Murugappan, Krishnan;
Lee, Won‐June;
Kluth, Patrick;
Nisbet, David R.;
Tran‐Phu, Thanh;
Yoon, Myung‐Han;
Tricoli, Antonio

Publication type:

Article