Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 4
Results: 44
Molecularly Thin BaTiO<sub>3</sub> Nanosheets with Stable Ferroelectric Response (Adv. Electron. Mater. 4/2023).
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202370018
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- Article
Enhancement of Light Extraction Efficiency and Suppression of Roll‐Off Characteristics of Thermally Activated Delayed Fluorescence Organic Light‐Emitting Diodes by Inserting Nanoscale Pixel‐Defining Layer (Adv. Electron. Mater. 4/2023)
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201264
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- Article
Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors (Adv. Electron. Mater. 4/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202370021
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- Article
Masthead: (Adv. Electron. Mater. 4/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202370020
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- Article
Enhancement of Light Extraction Efficiency and Suppression of Roll‐Off Characteristics of Thermally Activated Delayed Fluorescence Organic Light‐Emitting Diodes by Inserting Nanoscale Pixel‐Defining Layer (Adv. Electron. Mater. 4/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201264
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- Article
Lateral Perovskite Single‐Crystal Capacitors for Self‐Powered Photodetection.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201318
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- Article
Ameliorating Properties of Perovskite and Perovskite–Silicon Tandem Solar Cells via Mesoporous Antireflection Coating Model.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201317
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- Article
Enhancement of Light Extraction Efficiency and Suppression of Roll‐Off Characteristics of Thermally Activated Delayed Fluorescence Organic Light‐Emitting Diodes by Inserting Nanoscale Pixel‐Defining Layer.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201264
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- Article
Realization of Zero‐Field Skyrmions in a Magnetic Tunnel Junction.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201240
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- Article
Molecularly Thin BaTiO<sub>3</sub> Nanosheets with Stable Ferroelectric Response.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201239
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- Article
Co:BaTiO<sub>3</sub>/Sn:BaTiO<sub>3</sub> Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201141
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- Article
High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201236
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- Article
C<sub>8</sub>‐BTBT‐C<sub>8</sub> Thin‐Film Transistors Based on Micro‐Contact Printed PEDOT:PSS/MWCNT Electrodes.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201233
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- Article
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201224
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- Article
Ambipolarity Regulation of Deep‐UV Photocurrent by Controlling Crystalline Phases in Ga<sub>2</sub>O<sub>3</sub> Nanostructure for Switchable Logic Applications.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201216
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- Article
Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201208
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- Article
Polymer‐Based n‐Type Yarn for Organic Thermoelectric Textiles.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201235
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- Article
The Significance of an In Situ ALD Al<sub>2</sub>O<sub>3</sub> Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201202
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- Article
Achieving Efficient Light‐Emitting Diodes by Controlling Phase Distribution of Quasi‐2D Perovskites.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201199
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- Article
Multifunctional Electronic Textiles by Direct 3D Printing of Stretchable Conductive Fibers.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201194
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- Article
Unlocking AlN Piezoelectric Performance with Earth‐Abundant Dopants.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201187
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- Article
Tunable Quantum Dots from Atomically Precise Graphene Nanoribbons Using a Multi‐Gate Architecture.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201204
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- Article
Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201137
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- Article
Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201134
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- Article
A New Group of 2D Non‐van der Waals Materials with Ultra Low Exfoliation Energies.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201112
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- Article
Memristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201111
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- Article
Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201110
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- Publication type:
- Article
Biodegradable Cellulose Nanocomposite Substrate for Recyclable Flexible Printed Electronics.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201094
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- Article
Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Van der Waals Junctions with High Thermal Stability and Low Contact Resistance.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201091
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- Article
Proton Irradiation Effects on the Pyroelectric Properties of P‐Type Bismuth Antimonide/Poly(vinylidene fluoride–trifluoroethylene) Composite Films.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201084
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- Article
Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201081
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- Article
Improved Robustness against Magnetic Field in Spin–Orbit‐Torque‐Based Physical Unclonable Functions through Write‐Back Operation.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201073
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- Article
Structural Stability and Electronic Transport Properties of Nb<sub>2</sub>C‐MXenes under High Pressure.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201071
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- Article
A Two‐Terminal Optoelectronic Synapses Array Based on the ZnO/Al<sub>2</sub>O<sub>3</sub>/CdS Heterojunction with Strain‐Modulated Synaptic Weight.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201068
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- Article
Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201032
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- Article
Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201031
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- Article
Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201025
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- Article
Flexible Hybrid Electronics via Near‐Infrared Radiation‐Assisted Soldering of Surface Mount Devices on Screen Printed Circuits.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201012
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- Article
High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200980
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- Article
Bio‐Voltage Memristors: From Physical Mechanisms to Neuromorphic Interfaces.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200972
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- Article
Interfacial Superconductivity and Zero Bias Peak in Quasi‐One‐Dimensional Bi<sub>2</sub>Te<sub>3</sub>/Fe<sub>1+y</sub>Te Heterostructure Nanostructures.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200943
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- Article
Synthesis and Characterization of a New Ferroelectric with Low Lead Content, a High Curie Temperature, and a High Piezoelectric Response.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200910
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- Article
Hybrid Perovskite‐Based Flexible and Stable Memristor by Complete Solution Process for Neuromorphic Computing.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200908
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- Article
Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202200905
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- Article