Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 3
Results: 44
Efficient Ohmic Contact in Monolayer CrX<sub>2</sub>N<sub>4</sub> (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056
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Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories (Adv. Electron. Mater. 3/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370017
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Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation (Adv. Electron. Mater. 3/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370016
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Masthead: (Adv. Electron. Mater. 3/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370015
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- Article
Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed (Adv. Electron. Mater. 3/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370014
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- Article
Efficient Ohmic Contact in Monolayer CrX<sub>2</sub>N<sub>4</sub> (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056
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- Article
Improved Performance of Hf<sub>x</sub>Zn<sub>y</sub>O‐Based RRAM and its Switching Characteristics down to 4 K Temperature.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201250
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- Article
Self‐Powered Photodetector Based on Perovskite/NiO<sub>x</sub> Heterostructure for Sensitive Visible Light and X‐Ray Detection.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201222
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- Article
Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193
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- Article
Critical Assessment of the High Carrier Mobility of Bilayer In<sub>2</sub>O<sub>3</sub>/IGZO Transistors and the Underlying Mechanisms.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201184
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Inorganic Halide Perovskite Electromagnetic Wave Absorption System with Ultra‐Wide Absorption Bandwidth and High Thermal‐Stability.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201179
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Correlation between Nanoscale Domain Structures and Superconducting Phase Transitions in Highly Crystalline 2D Superconductors.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201170
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Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201163
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Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201155
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A Universal Method for Extracting and Quantitatively Analyzing Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201148
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- Article
Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201147
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- Article
High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201126
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- Article
High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201122
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Enhancement of the Magnetoresistance in the Mobility‐Engineered Compensated Metal Pt<sub>5</sub>P<sub>2</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201120
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Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201117
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Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201109
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- Article
Quantum Solid Phase and Coulomb Drag in 2D Electron–Electron Bilayers of MoS<sub>2</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201105
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Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired Computing.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201093
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Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201090
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Biodegradable and Bioabsorbable Polylactic Acid Ferroelectrets with Prominent Piezoelectric Activity.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201070
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Impact of Charge Carrier Injection/Extraction Performances in Low‐Dimension PEDOT:PSS Organic Electrochemical Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201067
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- Article
Electro‐Powerless Balloon Soft Actuator with Manually Driven Fluidic Circuit.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201065
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- Article
Memristive Synapse Based on Single‐Crystalline LiNbO<sub>3</sub> Thin Film with Bioinspired Microstructure for Experience‐Based Dynamic Image Mask Generation.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201064
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An Attention Mechanism‐Based Adaptive Feedback Computing Component by Neuromorphic Ion Gated MoS<sub>2</sub> Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201060
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- Article
Efficient Ohmic Contact in Monolayer CrX<sub>2</sub>N<sub>4</sub> (X = C, Si) Based Field‐Effect Transistors.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056
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- Publication type:
- Article
In Situ/Operando Studies for Reduced Eletromigration in Ag Nanowires with Stacking Faults.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201054
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Ultrasensitive and Wide‐Range Flexible Hydrogen Sensor Based on Pd Nanoparticles Decorated Ultrathin SnO<sub>2</sub> Film.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201047
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Multifunctional Ag–In–Zn–S/Cs<sub>3</sub>Cu<sub>2</sub>Cl<sub>5</sub>‐Based Memristors with Coexistence of Non‐Volatile Memory and Volatile Threshold Switching Behaviors for Neuroinspired Computing.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201038
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An Ultrasensitive Sandwiched Heterostructure Planar Photodetector with Gradient Quasi‐2D Perovskite.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201028
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A Flexible Corn Starch‐Based Biomaterial Device Integrated with Capacitive‐Coupled Memristive Memory, Mechanical Stress Sensing, Synapse, and Logic Operation Functions.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201017
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- Article
Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201014
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Emulating Nociceptive Receptor and LIF Neuron Behavior via ZrO<sub>x</sub>‐based Threshold Switching Memristor.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201006
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Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200998
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- Article
Extremely Sensitive Wearable Strain Sensor with Wide Range Based on a Simple Parallel Connection Architecture.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200993
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High‐Temperature Oxidation‐Resistant Printed Copper Conductors.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200979
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Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200975
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High‐Performance Cadmium‐Free Blue Quantum Dot Light‐Emitting Devices with Stepwise Double Hole‐Transport Layers.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200970
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Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe<sub>2</sub> FETs.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200955
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- Article
Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200554
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- Article