Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 2

Results: 43

Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions (Adv. Electron. Mater. 2/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202370010

By:

Chen, Zi‐Zhen;
Wu, Shun‐Da;
Lin, Jin‐Liang;
Chen, Li‐Chuan;
Cao, Jing‐Jing;
Shao, Xiangfeng;
Lambert, Colin J.;
Zhang, Hao‐Li

Publication type:

Article

Highly Sensitive Silver‐Microlayer Thin Film on a pp‐PFM‐Modified PDMS Strain Sensor as a Versatile Tool for Stretchable Electronics Applications (Adv. Electron. Mater. 2/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202370011

By:

Texidó, Robert;
Nieva‐Esteve, Gloria;
Gilabert‐Porres, Joan;
Reyes, Guillermo;
Borrós, Salvador

Publication type:

Article

Masthead: (Adv. Electron. Mater. 2/2023).

Published in:: Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202370009
Publication type:: Article

Control over Molecular Orbital Gating and Marcus Inverted Charge Transport in Molecular Junctions with Conjugated Molecular Wires (Adv. Electron. Mater. 2/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202370008

By:

Nijhuis, Christian A.;
Zhang, Ziyu;
Adoah, Francis;
Nickle, Cameron;
Karuppannan, Senthil Kumar;
Wang, Lejia;
Jiang, Li;
Tadich, Anton;
Cowie, Bruce;
Salim, Teddy;
Qi, Dong‐Chen;
Thompson, Damien;
Barco, Enrique Del

Publication type:

Article

Internally Structured Conductive Composite for Reliable Stretchable Electronics (Adv. Electron. Mater. 2/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202370007

By:

Park, Jeonghwan;
Myung, Jin Suk;
Cho, Duho;
Kim, Taesu;
Lee, Su Yeon;
Kim, Yunseok;
Choi, Youngmin;
Jung, Sungmook

Publication type:

Article

Essential Characteristics of Memristors for Neuromorphic Computing (Adv. Electron. Mater. 2/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202370012

By:

Chen, Wenbin;
Song, Lekai;
Wang, Shengbo;
Zhang, Zhiyuan;
Wang, Guanyu;
Hu, Guohua;
Gao, Shuo

Publication type:

Article

Magnetic‐Dielectric Complementary Fe‐Co‐Ni Alloy/Carbon Composites for High‐Attenuation C‐Band Microwave Absorption via Carbothermal Reduction of Solid‐Solution Precursor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201159

By:

Su, Zhe;
Yi, Shan;
Zhang, Wanyu;
Tian, Liying;
Zhang, Yayun;
Zhou, Shenghu;
Niu, Bo;
Long, Donghui

Publication type:

Article

Ultrafast and Stable Organic Single‐Crystal Vertical Phototransistor for Self‐Powered Photodetection and High‐Speed Imaging.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201097

By:

Zhang, Yuting;
Qin, Shuchao;
Du, Qianqian;
Gan, Yuquan;
Zhao, Jing;
Li, Mengru;
Zheng, Xialian;
Wang, Anran;
Liu, Yunlong;
Li, Shuhong;
Dong, Ruixin;
Nie, Zhonghui;
Liu, Cailong;
Wang, Wenjun;
Wang, Fengqiu

Publication type:

Article

Enhancement of Low‐k Spin‐Wave Transmission Efficiency with a Record‐High Group Velocity in YIG/Nonmagnetic Metal Heterojunctions.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201061

By:

Xu, Jiapeng;
Liao, Zhimin;
Wang, Qi;
Liu, Bo;
Tang, Xiaoli;
Zhong, Zhiyong;
Zhang, Lei;
Zhang, Yuanjing;
Zhang, Huaiwu;
Jin, Lichuan

Publication type:

Article

Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200915

By:

Xu, Han;
Fang, Renrui;
Wu, Shuyu;
An, Junjie;
Zhang, Woyu;
Li, Chao;
Lu, Jikai;
Li, Yue;
Xu, Xiaoxin;
Wang, Yan;
Liu, Qi;
Shang, Dashan

Publication type:

Article

A Class of Auxiliary Passivators for Polymer Dielectrics.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200887

By:

Li, Xiao‐Fen;
Wang, Tian‐Yu;
Li, Shunning;
Zhang, Gui‐Xin;
Liu, Jian‐Bo

Publication type:

Article

Multiwavelength Color Switching from Polyaniline‐Viologen Bilayer: Inching toward Versatile All‐Organic Flexible Electrochromic Device.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201042

By:

Ghosh, Tanushree;
Kandpal, Suchita;
Rani, Chanchal;
Bansal, Love;
Tanwar, Manushree;
Kumar, Rajesh

Publication type:

Article

Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201024

By:

Chen, Zi‐Zhen;
Wu, Shun‐Da;
Lin, Jin‐Liang;
Chen, Li‐Chuan;
Cao, Jing‐Jing;
Shao, Xiangfeng;
Lambert, Colin J.;
Zhang, Hao‐Li

Publication type:

Article

Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201023

By:

Liu, Mingyan;
Zhao, Yibin;
Wu, Fang;
Wang, Licheng;
Yao, Jiamin;
Yang, Yunwei;
Liu, Cong;
Wan, Yi;
Kan, Erjun

Publication type:

Article

Unidirectionally Aligned Donor–Acceptor Semiconducting Polymers in Floating Films for High‐Performance Unipolar n‐Channel Organic Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201043

By:

Pandey, Manish;
Sugita, Yuya;
Toyoda, Jumpei;
Katao, Shohei;
Abe, Ryo;
Cho, Yongyoon;
Benten, Hiroaki;
Nakamura, Masakazu

Publication type:

Article

In Situ TEM Observation of Electron‐Beam‐Induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200994

By:

Deng, Hao‐Wen;
Tseng, Yi‐Tang;
Lee, Mu‐Pai;
Lin, Yen‐Fu;
Wu, Wen‐Wei

Publication type:

Article

Nonclassical Growth of Atomically Flat Two‐Dimensional Organic Single Crystals on a Liquid Surface through Fusion.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201027

By:

Yao, Jiarong;
Tian, Xinzi;
Li, Bin;
Wang, Zhaofeng;
Zhang, Xiali;
Jie, Jiansheng;
Yang, Fangxu;
Li, Rongjin;
Hu, Wenping

Publication type:

Article

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201015

By:

Woo, Gunhoo;
Kim, Taesung;
Yoo, Hocheon

Publication type:

Article

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201007

By:

He, Bo;
He, Gang;
Jiang, Shanshan;
Liu, Jiangwei;
Fortunato, Elvira;
Martins, Rodrigo

Publication type:

Article

Internally Structured Conductive Composite for Reliable Stretchable Electronics.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201021

By:

Park, Jeonghwan;
Myung, Jin Suk;
Cho, Duho;
Kim, Taesu;
Lee, Su Yeon;
Kim, Yunseok;
Choi, Youngmin;
Jung, Sungmook

Publication type:

Article

Flexible and Transparent Ionic Liquids/Poly(vinylidene fluoride) Composition‐Gradient Piezo‐Active Composites for Highly Sensitive Pressure Sensor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201013

By:

Bao, Hao;
Ma, Yizhou;
Sun, Jiatai;
Zhao, Qiuying;
Yang, Lu;
Hou, Ying;
He, Haiyan;
Huang, Huajie;
Ji, Hongli;
Qiu, Jinhao

Publication type:

Article

Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200995

By:

Cottam, Nathan D.;
Austin, Jonathan S.;
Zhang, Chengxi;
Patanè, Amalia;
Escoffier, Walter;
Goiran, Michel;
Pierre, Mathieu;
Coletti, Camilla;
Mišeikis, Vaidotas;
Turyanska, Lyudmila;
Makarovsky, Oleg

Publication type:

Article

Covalent Functionalization of Black Phosphorus Nanosheets with Photochromic Polymer for Transient Optoelectronic Memory Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200925

By:

Wu, Dongchuang;
Cui, Xiaosheng;
El‐Khouly, Mohamed E.;
Gu, Minchao;
Zhang, Bin;
Chen, Yu

Publication type:

Article

Control over Molecular Orbital Gating and Marcus Inverted Charge Transport in Molecular Junctions with Conjugated Molecular Wires.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200637

By:

Nijhuis, Christian A.;
Zhang, Ziyu;
Adoah, Francis;
Nickle, Cameron;
Karuppannan, Senthil Kumar;
Wang, Lejia;
Jiang, Li;
Tadich, Anton;
Cowie, Bruce;
Salim, Teddy;
Qi, Dong‐Chen;
Thompson, Damien;
Barco, Enrique Del

Publication type:

Article

Sub‐second Lifetime of Photocarriers in Hybrid Lead Halide Perovskite.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200918

By:

Lv, Xingjie;
Yuan, Guoliang;
Wu, Tom;
Yan, Zhibo;
Xu, Ben;
Liu, Guanghua;
Liu, Jun‐Ming

Publication type:

Article

Realization of Multi‐Level State and Artificial Synapses Function in Stacked (Ta/CoFeB/MgO)N Structures.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200939

By:

Zhang, Bo;
Lv, Wenbo;
Guo, Yonghai;
Wang, Bo;
Luo, Keliu;
Li, Wangda;
Cao, Jiangwei

Publication type:

Article

Electronic Synaptic Devices with High Thermostability Induced by Embedded Tungsten Disulfide Quantum Dots for Machine Learning.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200876

By:

An, Haoqun;
An, Jun Seop;
Li, Mingjun;
Kim, Youngjin;
Kim, Tae Whan

Publication type:

Article

Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200924

By:

Yang, Maolong;
Wang, Liming;
Lu, Yao;
Wang, Bo;
Zhang, Ningning;
Liu, Maliang;
Guo, Hui;
Lin, Dongdong;
Zhang, Jincheng;
Hu, Huiyong

Publication type:

Article

A Memory Structure with Different Control Gates.

Published in:

2023

By:

Dai, Mingzhi;
Guan, Jianmin;
Song, Zhitang

Publication type:

Correction Notice

Green Flexible Triboelectric Nanogenerators Based on Edible Proteins for Electrophoretic Deposition.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200839

By:

Kheirabadi, Noushin Raeisi;
Karimzadeh, Fathallah;
Enayati, Mohammad Hossein;
Kalali, Ehsan Naderi

Publication type:

Article

Essential Characteristics of Memristors for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200833

By:

Chen, Wenbin;
Song, Lekai;
Wang, Shengbo;
Zhang, Zhiyuan;
Wang, Guanyu;
Hu, Guohua;
Gao, Shuo

Publication type:

Article

Submicron Vertical Channel Organic Electrochemical Transistors with Ultrahigh Transconductance.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200868

By:

Koutsouras, Dimitrios A.;
Torricelli, Fabrizio;
Blom, Paul W.M.

Publication type:

Article

Giant Magnetic Anisotropy in the Atomically Thin van der Waals Antiferromagnet FePS3.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200650

By:

Lee, Youjin;
Son, Suhan;
Kim, Chaebin;
Kang, Soonmin;
Shen, Junying;
Kenzelmann, Michel;
Delley, Bernard;
Savchenko, Tatiana;
Parchenko, Sergii;
Na, Woongki;
Choi, Ki‐Young;
Kim, Wondong;
Cheong, Hyeonsik;
Derlet, Peter M.;
Kleibert, Armin;
Park, Je‐Geun

Publication type:

Article

Ultraflexible and Energy‐Efficient Artificial Synapses Based on Molecular/Atomic Layer Deposited Organic–Inorganic Hybrid Thin Films.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200821

By:

Liu, Chang;
Zhu, Lin;
Weng, Jing‐Kai;
Li, Yu‐Chen;
Chen, Zhuo;
Lei, Jin;
Zi, Tao‐Qing;
Wu, Di;
Fa, Wei;
Chen, Shuang;
Liang, Bin;
Li, Ai‐Dong

Publication type:

Article

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe4)2I Weyl Semimetal Nanoribbons.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200860

By:

Ghosh, Subhajit;
Kargar, Fariborz;
Sesing, Nick R.;
Barani, Zahra;
Salguero, Tina T.;
Yan, Dong;
Rumyantsev, Sergey;
Balandin, Alexander A.

Publication type:

Article

Polaronic Trions Induced by Strong Interfacial Coupling in Monolayer WSe2.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200852

By:

Wang, Yao;
Liu, Chaocheng;
Duan, Hengli;
Li, Zhi;
Wang, Chao;
Feng, Sihua;
Liu, Ruiqi;
Hu, Fengchun;
Jia, Hongfeng;
Yu, Huabin;
Zhu, Lin;
Niu, Yuran;
Zakharov, Alexei A.;
Sun, Haiding;
Yan, Wensheng

Publication type:

Article

Optoelectronic Resistive Memory Based on Lead‐Free Cs2AgBiBr6 Double Perovskite for Artificial Self‐Storage Visual Sensors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200657

By:

Ye, Haibo;
Liu, Zhiyong;
Sun, Bo;
Zhang, Xuning;
Shi, Tielin;
Liao, Guanglan

Publication type:

Article

Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200800

By:

Li, Yang;
Wang, Wei;
Zhang, Di;
Baskin, Maria;
Chen, Aiping;
Kvatinsky, Shahar;
Yalon, Eilam;
Kornblum, Lior

Publication type:

Article

Polydopamine‐Based All Solid‐State Flexible Organic Neuromorphic Devices for Access Device‐Free Artificial Neural Networks.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200427

By:

Kazemzadeh, Setareh;
Dodsworth, Lloyd;
Pereira, Inês Figueiredo;
van de Burgt, Yoeri

Publication type:

Article

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of YxAl1−xN (x = 15%) Thin Films.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200789

By:

Pandit, Shardul;
Schneider, Michael;
Berger, Claudio;
Schwarz, Sabine;
Schmid, Ulrich

Publication type:

Article

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200786

By:

Zhou, Yuchen;
Wang, Xiao;
Dodabalapur, Ananth

Publication type:

Article

Highly Sensitive Silver‐Microlayer Thin Film on a pp‐PFM‐Modified PDMS Strain Sensor as a Versatile Tool for Stretchable Electronics Applications.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200717

By:

Texidó, Robert;
Nieva‐Esteve, Gloria;
Gilabert‐Porres, Joan;
Reyes, Guillermo;
Borrós, Salvador

Publication type:

Article

Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200722

By:

Liu, Menggan;
Niu, Jiebin;
Yang, Guanhua;
Chen, Kaifei;
Lu, Wendong;
Liao, Fuxi;
Lu, Congyan;
Lu, Nianduan;
Li, Ling

Publication type:

Article