Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 11

Results: 27

Synthesis, Characterization, and Second Harmonic Generation of Multiferroic Iron‐Doped Lithium Niobate Powders.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300450

By:

García‐Rodríguez, Mónica J.;
Sánchez‐Dena, Oswaldo;
Velasco‐Cortez, Omar A.;
Ordóñez‐Romero, César L.;
Vázquez‐Lepe, Milton O.;
Jonin, Christian;
Farías, Rurik;
Brevet, Pierre‐François;
Reyes‐Esqueda, Jorge‐Alejandro

Publication type:

Article

Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS3.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300461

By:

Chen, Huandong;
Wang, Nan;
Liu, Hefei;
Wang, Han;
Ravichandran, Jayakanth

Publication type:

Article

Synergistic Enhancement Mechanism of High Electron Density and Localized Surface Plasmons for Strong Light‐Matter Interactions.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300454

By:

Wang, Hongbo;
Wang, Yang;
Zhao, Zhi‐jun;
Du, Xinchuan;
Hu, Anjun;
Zhang, Miao;
Tang, Kai;
Zhou, Ting;
Tian, Yuchen;
Qian, Linmao;
Wang, Xianfu

Publication type:

Article

Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300497

By:

Ren, Yuhang;
Maity, Piyali;
Ascienzo, David;
Kurt, Onur;
Cheng, H.;
Ouyang, Jun

Publication type:

Article

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300286

By:

Silva, Carlos;
Deuermeier, Jonas;
Zhang, Weidong;
Carlos, Emanuel;
Barquinha, Pedro;
Martins, Rodrigo;
Kiazadeh, Asal

Publication type:

Article

A Flexible, 2.4‐GHz Wireless Ion Sensor System Using Printed Organic Amplifiers with 3‐V Single Supply.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300396

By:

Shiwaku, Rei;
Matsui, Hiroyuki;
Hommura, Yuki;
Takeda, Yasunori;
Nagamine, Kuniaki;
Tokito, Shizuo

Publication type:

Article

Strain‐Induced Toroidal Polar States in Wrinkled Ferroelectric Polymer by Phase‐Field Simulations.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300193

By:

Guo, Changqing;
Dong, Shouzhe;
Wang, Jing;
Wang, Xueyun;
Huang, Houbing

Publication type:

Article

Symmetry and Nonlinearity of Spin Wave Resonance Excited by Focused Surface Acoustic Waves.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300524

By:

Shah, Piyush J.;
Bas, Derek A.;
Hamadeh, Abbass;
Wolf, Michael;
Franson, Andrew;
Newburger, Michael;
Pirro, Philipp;
Weiler, Mathias;
Page, Michael R.

Publication type:

Article

Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300303

By:

Baek, Yongmin;
Bae, Byungjoon;
Yang, Jeongyong;
Lee, Doeon;
Lee, Hee Sung;
Park, Minseong;
Kim, Taegeon;
Kim, Sihwan;
Park, Bo‐In;
Yoo, Geonwook;
Lee, Kyusang

Publication type:

Article

Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300297

By:

Yan, Shiqi;
Jiao, Teng;
Ding, Zijian;
Zhou, Xinyu;
Ji, Xingqi;
Dong, Xin;
Zhang, Jiawei;
Xin, Qian;
Song, Aimin

Publication type:

Article

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300437

By:

Kim, Tae Soo;
Jeon, Sung‐Han;
Ko, Kyeol;
Ahn, Dae‐Hwan;
Han, Jae‐Hoon;
Choi, Won Jun;
Yu, Ki Jun

Publication type:

Article

Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300333

By:

Fatti, Giulio;
Ciniero, Alessandra;
Ko, Hyunseok;
Lee, Han Uk;
Na, Yujin;
Jeong, Chang Kyu;
Lee, Sang‐Geul;
Kwak, Dongyub;
Park, Kwi‐Il;
Cho, Sung Beom;
Dini, Daniele

Publication type:

Article

N‐Type Doping and Passivation of Black Phosphorus Using Pentacene for Infrared Polarization‐Sensitive Photodetection and Imaging.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300392

By:

Li, Guangliang;
Kong, Lingxian;
Su, Qi;
Tan, Xianhua;
Zhang, Xuning;
Liu, Zhiyong;
Shi, Tielin;
Liao, Guanglan;
Sun, Bo

Publication type:

Article

Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300291

By:

Schöppach, Fabian;
Splith, Daniel;
von Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300385

By:

Ajejas, Fernando;
Torres, Felipe;
Basaran, Ali C.;
Salev, Pavel;
Schuller, Ivan K.

Publication type:

Article

Integrating Conjugated Polymers with Bacteriorhodopsin to Realize Quasi Dual‐Gate Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300278

By:

Chen, Pei‐Yu;
Ko, Ling‐Ning;
Chen, Yen‐Yu;
Yang, Chii‐Shen;
Lai, Yu‐Ying

Publication type:

Article

Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300288

By:

Yeh, Po‐Lun;
Wu, Bo‐Rui;
Peng, Yi‐Wei;
Wu, Chen‐Wei;
Jheng, Yue‐Tong;
Lee, Kwang Hong;
Chen, Qimiao;
Tan, Chuan Seng;
Chang, Guo‐En

Publication type:

Article

Sequential Cyanation of Polythiophenes: Tuning Charge Carrier Polarity in Organic Electrochemical Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300207

By:

Ma, Suxiang;
Wang, Junwei;
Wu, Wenchang;
Wu, Ziang;
Zhang, Hao;
Chen, Rifei;
Liu, Bin;
Feng, Kui;
Woo, Han Young;
Guo, Xugang

Publication type:

Article

3D Sponge Electrodes for Soft Wearable Bioelectronics.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300334

By:

Lin, Fenge;
Cheng, Wenlong

Publication type:

Article

Highly Stretchable Conductor Inspired by Compliant Mechanism.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300343

By:

Lu, Zhilai;
Deng, Yinjun;
Zhou, Xintong;
He, Lei;
Song, Jianan;
Wang, Qingshan;
Xia, Jianfang;
Liu, Linpeng;
Hammad, Farid A.;
Tian, Yanling

Publication type:

Article

Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300362

By:

Ha, Jinha;
Kim, Dongkyu;
Park, Hyunjin;
Yoo, Sungmi;
So, Yujin;
Kim, Jinsoo;
Park, Jongmin;
Won, Jong Chan;
Kim, Yun Ho

Publication type:

Article

Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300401

By:

Nallagatla, Venkata Raveendra;
Sasindra, Harisankar;
Kim, Hyoung Gyun;
Yoo, Dongha;
Yi, Gyu‐Chul;
Kim, Miyoung;
Jung, Chang Uk

Publication type:

Article

High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300415

By:

Liu, Yutong;
Yu, Yang;
Li, Tianzhi;
Hu, Yihong;
Unnithan, Ranjith;
Skafidas, Efstratios

Publication type:

Article

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate (Adv. Electron. Mater. 11/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370050

By:

Kim, Tae Soo;
Jeon, Sung‐Han;
Ko, Kyeol;
Ahn, Dae‐Hwan;
Han, Jae‐Hoon;
Choi, Won Jun;
Yu, Ki Jun

Publication type:

Article

Masthead: (Adv. Electron. Mater. 11/2023).

Published in:: Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370049
Publication type:: Article

Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process (Adv. Electron. Mater. 11/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370048

By:

Ha, Jinha;
Kim, Dongkyu;
Park, Hyunjin;
Yoo, Sungmi;
So, Yujin;
Kim, Jinsoo;
Park, Jongmin;
Won, Jong Chan;
Kim, Yun Ho

Publication type:

Article

Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths (Adv. Electron. Mater. 11/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370047

By:

Yeh, Po‐Lun;
Wu, Bo‐Rui;
Peng, Yi‐Wei;
Wu, Chen‐Wei;
Jheng, Yue‐Tong;
Lee, Kwang Hong;
Chen, Qimiao;
Tan, Chuan Seng;
Chang, Guo‐En

Publication type:

Article

Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 11

Synthesis, Characterization, and Second Harmonic Generation of Multiferroic Iron‐Doped Lithium Niobate Powders.

Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS<sub>3</sub>.

Synergistic Enhancement Mechanism of High Electron Density and Localized Surface Plasmons for Strong Light‐Matter Interactions.

Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>.

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices.

A Flexible, 2.4‐GHz Wireless Ion Sensor System Using Printed Organic Amplifiers with 3‐V Single Supply.

Strain‐Induced Toroidal Polar States in Wrinkled Ferroelectric Polymer by Phase‐Field Simulations.

Symmetry and Nonlinearity of Spin Wave Resonance Excited by Focused Surface Acoustic Waves.

Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors.

Ga<sub>2</sub>O<sub>3</sub> Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio.

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate.

Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene.

N‐Type Doping and Passivation of Black Phosphorus Using Pentacene for Infrared Polarization‐Sensitive Photodetection and Imaging.

Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices.

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film.

Integrating Conjugated Polymers with Bacteriorhodopsin to Realize Quasi Dual‐Gate Organic Field‐Effect Transistors.

Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths.

Sequential Cyanation of Polythiophenes: Tuning Charge Carrier Polarity in Organic Electrochemical Transistors.

3D Sponge Electrodes for Soft Wearable Bioelectronics.

Highly Stretchable Conductor Inspired by Compliant Mechanism.

Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process.

Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices.

High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric.

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate (Adv. Electron. Mater. 11/2023).

Masthead: (Adv. Electron. Mater. 11/2023).

Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process (Adv. Electron. Mater. 11/2023).

Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths (Adv. Electron. Mater. 11/2023).