Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 11

Results: 27

Synthesis, Characterization, and Second Harmonic Generation of Multiferroic Iron‐Doped Lithium Niobate Powders.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300450
By:
- García‐Rodríguez, Mónica J.;
- Sánchez‐Dena, Oswaldo;
- Velasco‐Cortez, Omar A.;
- Ordóñez‐Romero, César L.;
- Vázquez‐Lepe, Milton O.;
- Jonin, Christian;
- Farías, Rurik;
- Brevet, Pierre‐François;
- Reyes‐Esqueda, Jorge‐Alejandro
Publication type:
Article
Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS3.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300461
By:
- Chen, Huandong;
- Wang, Nan;
- Liu, Hefei;
- Wang, Han;
- Ravichandran, Jayakanth
Publication type:
Article
Synergistic Enhancement Mechanism of High Electron Density and Localized Surface Plasmons for Strong Light‐Matter Interactions.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300454
By:
- Wang, Hongbo;
- Wang, Yang;
- Zhao, Zhi‐jun;
- Du, Xinchuan;
- Hu, Anjun;
- Zhang, Miao;
- Tang, Kai;
- Zhou, Ting;
- Tian, Yuchen;
- Qian, Linmao;
- Wang, Xianfu
Publication type:
Article
Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300497
By:
- Ren, Yuhang;
- Maity, Piyali;
- Ascienzo, David;
- Kurt, Onur;
- Cheng, H.;
- Ouyang, Jun
Publication type:
Article
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300286
By:
- Silva, Carlos;
- Deuermeier, Jonas;
- Zhang, Weidong;
- Carlos, Emanuel;
- Barquinha, Pedro;
- Martins, Rodrigo;
- Kiazadeh, Asal
Publication type:
Article
A Flexible, 2.4‐GHz Wireless Ion Sensor System Using Printed Organic Amplifiers with 3‐V Single Supply.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300396
By:
- Shiwaku, Rei;
- Matsui, Hiroyuki;
- Hommura, Yuki;
- Takeda, Yasunori;
- Nagamine, Kuniaki;
- Tokito, Shizuo
Publication type:
Article
Strain‐Induced Toroidal Polar States in Wrinkled Ferroelectric Polymer by Phase‐Field Simulations.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300193
By:
- Guo, Changqing;
- Dong, Shouzhe;
- Wang, Jing;
- Wang, Xueyun;
- Huang, Houbing
Publication type:
Article
Symmetry and Nonlinearity of Spin Wave Resonance Excited by Focused Surface Acoustic Waves.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300524
By:
- Shah, Piyush J.;
- Bas, Derek A.;
- Hamadeh, Abbass;
- Wolf, Michael;
- Franson, Andrew;
- Newburger, Michael;
- Pirro, Philipp;
- Weiler, Mathias;
- Page, Michael R.
Publication type:
Article
Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300303
By:
- Baek, Yongmin;
- Bae, Byungjoon;
- Yang, Jeongyong;
- Lee, Doeon;
- Lee, Hee Sung;
- Park, Minseong;
- Kim, Taegeon;
- Kim, Sihwan;
- Park, Bo‐In;
- Yoo, Geonwook;
- Lee, Kyusang
Publication type:
Article
Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300297
By:
- Yan, Shiqi;
- Jiao, Teng;
- Ding, Zijian;
- Zhou, Xinyu;
- Ji, Xingqi;
- Dong, Xin;
- Zhang, Jiawei;
- Xin, Qian;
- Song, Aimin
Publication type:
Article
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300437
By:
- Kim, Tae Soo;
- Jeon, Sung‐Han;
- Ko, Kyeol;
- Ahn, Dae‐Hwan;
- Han, Jae‐Hoon;
- Choi, Won Jun;
- Yu, Ki Jun
Publication type:
Article
Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300333
By:
- Fatti, Giulio;
- Ciniero, Alessandra;
- Ko, Hyunseok;
- Lee, Han Uk;
- Na, Yujin;
- Jeong, Chang Kyu;
- Lee, Sang‐Geul;
- Kwak, Dongyub;
- Park, Kwi‐Il;
- Cho, Sung Beom;
- Dini, Daniele
Publication type:
Article
N‐Type Doping and Passivation of Black Phosphorus Using Pentacene for Infrared Polarization‐Sensitive Photodetection and Imaging.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300392
By:
- Li, Guangliang;
- Kong, Lingxian;
- Su, Qi;
- Tan, Xianhua;
- Zhang, Xuning;
- Liu, Zhiyong;
- Shi, Tielin;
- Liao, Guanglan;
- Sun, Bo
Publication type:
Article
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300291
By:
- Schöppach, Fabian;
- Splith, Daniel;
- von Wenckstern, Holger;
- Grundmann, Marius
Publication type:
Article
Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300385
By:
- Ajejas, Fernando;
- Torres, Felipe;
- Basaran, Ali C.;
- Salev, Pavel;
- Schuller, Ivan K.
Publication type:
Article
Integrating Conjugated Polymers with Bacteriorhodopsin to Realize Quasi Dual‐Gate Organic Field‐Effect Transistors.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300278
By:
- Chen, Pei‐Yu;
- Ko, Ling‐Ning;
- Chen, Yen‐Yu;
- Yang, Chii‐Shen;
- Lai, Yu‐Ying
Publication type:
Article
Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300288
By:
- Yeh, Po‐Lun;
- Wu, Bo‐Rui;
- Peng, Yi‐Wei;
- Wu, Chen‐Wei;
- Jheng, Yue‐Tong;
- Lee, Kwang Hong;
- Chen, Qimiao;
- Tan, Chuan Seng;
- Chang, Guo‐En
Publication type:
Article
Sequential Cyanation of Polythiophenes: Tuning Charge Carrier Polarity in Organic Electrochemical Transistors.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300207
By:
- Ma, Suxiang;
- Wang, Junwei;
- Wu, Wenchang;
- Wu, Ziang;
- Zhang, Hao;
- Chen, Rifei;
- Liu, Bin;
- Feng, Kui;
- Woo, Han Young;
- Guo, Xugang
Publication type:
Article
3D Sponge Electrodes for Soft Wearable Bioelectronics.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300334
By:
- Lin, Fenge;
- Cheng, Wenlong
Publication type:
Article
Highly Stretchable Conductor Inspired by Compliant Mechanism.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300343
By:
- Lu, Zhilai;
- Deng, Yinjun;
- Zhou, Xintong;
- He, Lei;
- Song, Jianan;
- Wang, Qingshan;
- Xia, Jianfang;
- Liu, Linpeng;
- Hammad, Farid A.;
- Tian, Yanling
Publication type:
Article
Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300362
By:
- Ha, Jinha;
- Kim, Dongkyu;
- Park, Hyunjin;
- Yoo, Sungmi;
- So, Yujin;
- Kim, Jinsoo;
- Park, Jongmin;
- Won, Jong Chan;
- Kim, Yun Ho
Publication type:
Article
Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300401
By:
- Nallagatla, Venkata Raveendra;
- Sasindra, Harisankar;
- Kim, Hyoung Gyun;
- Yoo, Dongha;
- Yi, Gyu‐Chul;
- Kim, Miyoung;
- Jung, Chang Uk
Publication type:
Article
High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300415
By:
- Liu, Yutong;
- Yu, Yang;
- Li, Tianzhi;
- Hu, Yihong;
- Unnithan, Ranjith;
- Skafidas, Efstratios
Publication type:
Article
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate (Adv. Electron. Mater. 11/2023).
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370050
By:
- Kim, Tae Soo;
- Jeon, Sung‐Han;
- Ko, Kyeol;
- Ahn, Dae‐Hwan;
- Han, Jae‐Hoon;
- Choi, Won Jun;
- Yu, Ki Jun
Publication type:
Article
Masthead: (Adv. Electron. Mater. 11/2023).
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370049
Publication type:
Article
Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process (Adv. Electron. Mater. 11/2023).
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370048
By:
- Ha, Jinha;
- Kim, Dongkyu;
- Park, Hyunjin;
- Yoo, Sungmi;
- So, Yujin;
- Kim, Jinsoo;
- Park, Jongmin;
- Won, Jong Chan;
- Kim, Yun Ho
Publication type:
Article
Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths (Adv. Electron. Mater. 11/2023).
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370047
By:
- Yeh, Po‐Lun;
- Wu, Bo‐Rui;
- Peng, Yi‐Wei;
- Wu, Chen‐Wei;
- Jheng, Yue‐Tong;
- Lee, Kwang Hong;
- Chen, Qimiao;
- Tan, Chuan Seng;
- Chang, Guo‐En
Publication type:
Article

Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 11

Synthesis, Characterization, and Second Harmonic Generation of Multiferroic Iron‐Doped Lithium Niobate Powders.

Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS<sub>3</sub>.

Synergistic Enhancement Mechanism of High Electron Density and Localized Surface Plasmons for Strong Light‐Matter Interactions.

Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>.

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices.

A Flexible, 2.4‐GHz Wireless Ion Sensor System Using Printed Organic Amplifiers with 3‐V Single Supply.

Strain‐Induced Toroidal Polar States in Wrinkled Ferroelectric Polymer by Phase‐Field Simulations.

Symmetry and Nonlinearity of Spin Wave Resonance Excited by Focused Surface Acoustic Waves.

Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors.

Ga<sub>2</sub>O<sub>3</sub> Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio.

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate.

Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene.

N‐Type Doping and Passivation of Black Phosphorus Using Pentacene for Infrared Polarization‐Sensitive Photodetection and Imaging.

Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices.

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film.

Integrating Conjugated Polymers with Bacteriorhodopsin to Realize Quasi Dual‐Gate Organic Field‐Effect Transistors.

Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths.

Sequential Cyanation of Polythiophenes: Tuning Charge Carrier Polarity in Organic Electrochemical Transistors.

3D Sponge Electrodes for Soft Wearable Bioelectronics.

Highly Stretchable Conductor Inspired by Compliant Mechanism.

Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process.

Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices.

High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric.

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate (Adv. Electron. Mater. 11/2023).

Masthead: (Adv. Electron. Mater. 11/2023).

Fabrication of Large‐Area Organic Thin Film Transistor Array with Highly Uniform Water‐Borne Polyimide Gate Dielectric via Green Solvent‐Engineered Bar‐Coating Process (Adv. Electron. Mater. 11/2023).

Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths (Adv. Electron. Mater. 11/2023).