Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 8

Results: 26

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100580

By:

Lanza, Mario;
Palumbo, Felix;
Shi, Yuanyuan;
Aguirre, Fernando;
Boyeras, Santiago;
Yuan, Bin;
Yalon, Eilam;
Moreno, Enrique;
Wu, Tianru;
Roldan, Juan B.

Publication type:

Article

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (Adv. Electron. Mater. 8/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270041

By:

Kim, Hae Jin;
Kim, Jihun;
Park, Tae Gyun;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing (Adv. Electron. Mater. 8/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270040

By:

Zhuo, Ye;
Midya, Rivu;
Song, Wenhao;
Wang, Zhongrui;
Asapu, Shiva;
Rao, Mingyi;
Lin, Peng;
Jiang, Hao;
Xia, Qiangfei;
Williams, R. Stanley;
Yang, J. Joshua

Publication type:

Article

Masthead: (Adv. Electron. Mater. 8/2022).

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270039
Publication type:: Article

Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications (Adv. Electron. Mater. 8/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270038

By:

Müller, Maximilian J.;
Yadav, Aakash;
Persch, Christoph;
Wahl, Sophia;
Hoff, Felix;
Wuttig, Matthias

Publication type:

Article

Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration (Adv. Electron. Mater. 8/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101161

By:

Farronato, Matteo;
Melegari, Margherita;
Ricci, Saverio;
Hashemkhani, Shahin;
Bricalli, Alessandro;
Ielmini, Daniele

Publication type:

Article

Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200765

By:

Valov, Ilia;
Hasegawa, Tsuyoshi;
Strukov, Dmitri

Publication type:

Article

Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200378

By:

Lee, Hyunjoon;
Ryu, Da Gil;
Lee, Giho;
Song, Min‐Kyu;
Moon, Hyungjin;
Lee, Jaehyeong;
Ryu, Jongchan;
Kang, Ji‐Hoon;
Suh, Junmin;
Kim, Sangbum;
Lim, Jongwoo;
Jeon, Dongsuk;
Kim, Seyoung;
Kim, Jeehwan;
Lee, Yun Seog

Publication type:

Article

1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200323

By:

Minguet Lopez, Joel;
Rafhay, Quentin;
Dampfhoffer, Manon;
Reganaz, Lucas;
Castellani, Niccolo;
Meli, Valentina;
Martin, Simon;
Grenouillet, Laurent;
Navarro, Gabriele;
Magis, Thomas;
Carabasse, Catherine;
Hirtzlin, Tifenn;
Vianello, Elisa;
Deleruyelle, Damien;
Portal, Jean‐Michel;
Molas, Gabriel;
Andrieu, François

Publication type:

Article

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200215

By:

Tominov, Roman;
Avilov, Vadim;
Vakulov, Zakhar;
Khakhulin, Daniil;
Ageev, Oleg;
Valov, Ilia;
Smirnov, Vladimir

Publication type:

Article

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200182

By:

Ascoli, Alon;
Menzel, Stephan;
Rana, Vikas;
Kempen, Tim;
Messaris, Ioannis;
Demirkol, Ahmet Samil;
Schulten, Michael;
Siemon, Anne;
Tetzlaff, Ronald

Publication type:

Article

Differentiable Content Addressable Memory with Memristors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101198

By:

Pedretti, Giacomo;
Graves, Catherine E.;
Van Vaerenbergh, Thomas;
Serebryakov, Sergey;
Foltin, Martin;
Sheng, Xia;
Mao, Ruibin;
Li, Can;
Strachan, John Paul

Publication type:

Article

Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101161

By:

Farronato, Matteo;
Melegari, Margherita;
Ricci, Saverio;
Hashemkhani, Shahin;
Bricalli, Alessandro;
Ielmini, Daniele

Publication type:

Article

Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101025

By:

Yoo, Sangmin;
Wu, Yuting;
Park, Yongmo;
Lu, Wei D.

Publication type:

Article

Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100974

By:

Müller, Maximilian J.;
Yadav, Aakash;
Persch, Christoph;
Wahl, Sophia;
Hoff, Felix;
Wuttig, Matthias

Publication type:

Article

Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100936

By:

Heisig, Thomas;
Lange, Kristof;
Gutsche, Alexander;
Goß, Kalle Thorben;
Hambsch, Sebastian;
Locatelli, Andrea;
Menteş, Tevfik Onur;
Genuzio, Francesca;
Menzel, Stephan;
Dittmann, Regina

Publication type:

Article

A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100645

By:

Terabe, Kazuya;
Tsuchiya, Takashi;
Tsuruoka, Tohru

Publication type:

Article

Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100897

By:

Chamele, Ninad;
Balaban, Mehmet B.;
Patadia, Arshey;
Swain, Smitha S.;
Gonzalez‐Velo, Yago;
Roldan, Manuel;
Kozicki, Michael

Publication type:

Article

Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100758

By:

Sugawara, Kota;
Shima, Hisashi;
Takahashi, Makoto;
Naitoh, Yasuhisa;
Suga, Hiroshi;
Akinaga, Hiroyuki

Publication type:

Article

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100696

By:

Zhuo, Ye;
Midya, Rivu;
Song, Wenhao;
Wang, Zhongrui;
Asapu, Shiva;
Rao, Mingyi;
Lin, Peng;
Jiang, Hao;
Xia, Qiangfei;
Williams, R. Stanley;
Yang, J. Joshua

Publication type:

Article

Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100669

By:

Cheng, Caidie;
Wang, Yanghao;
Xu, Liying;
Liu, Keqin;
Dang, Bingjie;
Lu, Yingming;
Yan, Xiaoqin;
Huang, Ru;
Yang, Yuchao

Publication type:

Article

Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100662

By:

Jiang, Pengfei;
Wei, Wei;
Yang, Yang;
Wang, Yuan;
Xu, Yannan;
Tai, Lu;
Yuan, Peng;
Chen, Yuting;
Gao, Zhaomeng;
Gong, Tiancheng;
Ding, Yaxin;
Lv, Shuxian;
Dang, Zhiwei;
Wang, Yan;
Yang, Jianguo;
Luo, Qing;
Liu, Ming

Publication type:

Article

Investigation of Resistive Switching Mechanisms in Ti/TiOx/Pd‐Based RRAM Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100827

By:

Hu, Ruofei;
Li, Xinyi;
Tang, Jianshi;
Li, Yijun;
Zheng, Xiaojian;
Gao, Bin;
Qian, He;
Wu, Huaqiang

Publication type:

Article

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100580

By:

Lanza, Mario;
Palumbo, Felix;
Shi, Yuanyuan;
Aguirre, Fernando;
Boyeras, Santiago;
Yuan, Bin;
Yalon, Eilam;
Moreno, Enrique;
Wu, Tianru;
Roldan, Juan B.

Publication type:

Article

A Stacked Hybrid Organic/Inorganic Electrochemical Random‐Access Memory for Scalable Implementation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100426

By:

Tuchman, Yaakov;
Quill, Tyler J.;
LeCroy, Garrett;
Salleo, Alberto

Publication type:

Article

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100209

By:

Kim, Hae Jin;
Kim, Jihun;
Park, Tae Gyun;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 8

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022).

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (Adv. Electron. Mater. 8/2022).

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing (Adv. Electron. Mater. 8/2022).

Masthead: (Adv. Electron. Mater. 8/2022).

Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications (Adv. Electron. Mater. 8/2022).

Memtransistor Devices Based on MoS<sub>2</sub> Multilayers with Volatile Switching due to Ag Cation Migration (Adv. Electron. Mater. 8/2022).

Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories.

Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing.

1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks.

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage.

A Deep Study of Resistance Switching Phenomena in TaO<sub>x</sub> ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification.

Differentiable Content Addressable Memory with Memristors.

Memtransistor Devices Based on MoS<sub>2</sub> Multilayers with Volatile Switching due to Ag Cation Migration.

Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity.

Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications.

Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism.

A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components.

Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells.

Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory.

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing.

Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing.

Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period.

Investigation of Resistive Switching Mechanisms in Ti/TiO<sub>x</sub>/Pd‐Based RRAM Devices.

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching.

A Stacked Hybrid Organic/Inorganic Electrochemical Random‐Access Memory for Scalable Implementation.

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory.